Stanford Electronics Laboratories

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#	Title	Journal	Year	Citations
1	Atomic subshell photoionization cross sections and asymmetry parameters: 1 ⩽ Z ⩽ 103	Atomic Data and Nuclear Data Tables	1985	4,590
2	New and unified model for Schottky barrier and III–V insulator interface states formation	Journal of Vacuum Science and Technology	1979	894
3	Photoemission Studies of Copper and Silver: Theory	Physical Review	1964	852
4	Review of Recent Work on the Magnetic and Spectroscopic Properties of the Rare‐Earth Orthoferrites	Journal of Applied Physics	1969	788
5	A Technique for Optically Convolving Two Functions	Applied Optics	1966	773
6	Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States	Physical Review Letters	1980	712
7	Optical Properties of NiO and CoO	Physical Review B	1970	475
8	Electronic Structure of Amorphous Si from Photoemission and Optical Studies	Physical Review B	1972	453
9	Proving Liveness Properties of Concurrent Programs	ACM Transactions on Programming Languages and Systems	1982	437
10	Instability, Turbulence, and Conductivity in Current-Carrying Plasma	Physical Review Letters	1958	404
11	Photoemission Studies of Copper and Silver: Experiment	Physical Review	1964	387
12	Bell inequalities with a magnitude of violation that grows exponentially with the number of particles	Physical Review A	1992	312
13	Electron trapping in SiO2 at 295 and 77 °K	Journal of Applied Physics	1979	252
14	Stoichiometric disturbances in ion implanted compound semiconductors	Journal of Applied Physics	1981	248
15	Anomalous spectral weight transfer at the superconducting transition ofBi2Sr2CaCu2O8+δ	Physical Review Letters	1991	248
16	Radio-Frequency Coils in Implantable Devices: Misalignment Analysis and Design Procedure	IEEE Transactions on Biomedical Engineering	1987	216
17	Lattice Vibration Spectra ofGaAsxP1−xSingle Crystals	Physical Review	1966	206
18	Crystal-Field Spectra of3dnImpurities in II-VI and III-V Compound Semiconductors	Physical Review	1967	203
19	WAVEFRONT‐RECONSTRUCTION IMAGING THROUGH RANDOM MEDIA	Applied Physics Letters	1966	201
20	High Frequency Recording with Electrostatically Deflected Ink Jets	Review of Scientific Instruments	1965	195
21	Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model	Applied Physics Letters	1984	190
22	A Discussion of Sampling Theorems	Proceedings of the IEEE	1959	182
23	Infrared Reflection Spectra ofGa1−xAlxAsMixed Crystals	Physical Review B	1970	180
24	Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP	Physical Review B	1978	179
25	Near infrared to vacuum ultraviolet absorption spectra and the optical constants of phthalocyanine and porphyrin films	Journal of Molecular Spectroscopy	1970	175
26	Calculation of surface generation and recombination velocities at the Si‐SiO2interface	Journal of Applied Physics	1985	174
27	Design theory of a surface field-effect transistor	Solid-State Electronics	1964	169
28	A Wide-Band Efficient Inductive Transdennal Power and Data Link with Coupling Insensitive Gain	IEEE Transactions on Biomedical Engineering	1987	168
29	Weak scattering in random media, with applications to remote probing	Proceedings of the IEEE	1969	163
30	Possible Non-One-Electron Effects in the Fundamental Optical Excitation Spectra of Certain Crystalline Solids and Their Effect on Photoemission	Physical Review	1967	154
31	Hot-Electron Emission From Shallowp−nJunctions is Silicon	Physical Review	1963	149
32	The Fundamental Noise Limit of Linear Amplifiers	Proceedings of the IEEE	1962	142
33	Boron in Near‐Intrinsic <100> and <111> Silicon under Inert and Oxidizing Ambients—Diffusion and Segregation	Journal of the Electrochemical Society	1978	134
34	An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targets	Journal of Applied Physics	1980	133
35	Study of Aluminum Films. I. Optical Studies of Reflectance Drops and Surface Oscillations on Controlled-Roughness Films	Physical Review B	1971	132
36	Measuring and modeling minority carrier transport in heavily doped silicon	Solid-State Electronics	1985	132
37	Range-energy relation of hot electrons in gold	Solid-State Electronics	1964	131
38	Reconstruction of a two‐dimensional reflecting medium over a circular domain: Exact solution	Journal of the Acoustical Society of America	1980	131
39	On models of phosphorus diffusion in silicon	Journal of Applied Physics	1983	129
40	Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S‐treated GaAs (100) surfaces	Applied Physics Letters	1989	127
41	Silicide and Schottky barrier formation in the Ti‐Si and the Ti‐SiOx‐Si systems	Journal of Applied Physics	1982	126
42	Annealing and Arsenic Overpressure Experiments on Defects in Gallium Arsenide	Journal of Applied Physics	1966	123
43	Initial stage of thermal oxidation of the Si(111)-(7×7) surface	Physical Review B	1986	120
44	Measurement of Photoemitted Electron Energy Distributions by an ac Method	Review of Scientific Instruments	1964	117
45	Optimization of the Hydrazine‐Water Solution for Anisotropic Etching of Silicon in Integrated Circuit Technology	Journal of the Electrochemical Society	1975	110
46	Bonding at the K/Si(100) 2×1 interface: A surface extended x-ray-absorption fine-structure study	Physical Review B	1988	110
47	A class of systematic codes for non-independent errors	IEEE Transactions on Information Theory	1959	101
48	Study of sorption of oxygen on Al	Physical Review B	1976	100
49	Photoemission and photon‐stimulated ion desorption studies of diamond(111): Hydrogen	Journal of Vacuum Science and Technology	1982	99
50	Phase diagram, crystal growth, and band structure of InxGa1-xAs	Journal of Physics and Chemistry of Solids	1972	97

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