Institute of Quantum Electronics and Photonics

52(top 2%)

papers

1.9K(top 1%)

citations

24(top 1%)

h-index

44(top 1%)

g-index

all documents

2.0K

doc citations

299

citing journals

Top Articles

#	Title	Journal	Year	Citations
1	Spontaneous Polarization Buildup in a Room-Temperature Polariton Laser	Physical Review Letters	2008	197
2	Probing carrier dynamics in nanostructures by picosecond cathodoluminescence	Nature	2005	157
3	Growth and characterization of single quantum dots emitting at 1300 nm	Applied Physics Letters	2005	153
4	205-GHz (Al,In)N/GaN HEMTs	IEEE Electron Device Letters	2010	132
5	Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?	IEEE Electron Device Letters	2006	110
6	Recent Progress in the Growth of Highly Reflective Nitride-Based Distributed Bragg Reflectors and Their Use in Microcavities	Japanese Journal of Applied Physics	2005	88
7	Differential Gain and Gain Compression in Quantum-Dot Lasers	IEEE Journal of Quantum Electronics	2007	86
8	Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$	IEEE Transactions on Electron Devices	2008	86
9	Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot laser	Electronics Letters	2005	81
10	Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors	Applied Physics Letters	2007	71
11	MOCVD of HfO₂ and ZrO₂ high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs	Semiconductor Science and Technology	2007	62
12	Two-state switching and dynamics in quantum dot two-section lasers	Journal of Applied Physics	2006	59
13	Quantum dot superluminescent diodes emitting at 1.3 /spl mu/m	IEEE Photonics Technology Letters	2005	54
14	Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs	Physica Status Solidi (A) Applications and Materials Science	2007	49
15	102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz	IEEE Electron Device Letters	2009	49
16	Scaling quantum-dot light-emitting diodes to submicrometer sizes	Applied Physics Letters	2002	43
17	Visible InGaN/GaN Quantum-Dot Materials and Devices	Proceedings of the IEEE	2007	42
18	Structural and optical properties of low-density and In-rich InAs∕GaAs quantum dots	Journal of Applied Physics	2007	38
19	Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon withF_T= 143 GHz	Applied Physics Express	2010	37
20	Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors	IEEE Transactions on Electron Devices	2014	37
21	Long wavelength MEMS tunable VCSEL with InP-InAlGaAs bottom DBR	IEEE Photonics Technology Letters	2003	34
22	Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier	IEEE Transactions on Electron Devices	2010	31
23	100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With ${F}_{ \rm T} = \hbox{144}\ \hbox{GHz}$	IEEE Electron Device Letters	2010	30
24	High-Power Quantum-Dot Superluminescent Diodes With p-Doped Active Region	IEEE Photonics Technology Letters	2006	26
25	Lattice-Matched GaN–InAlN Waveguides at $\lambda=1.55\ \mu$m Grown by Metal–Organic Vapor Phase Epitaxy	IEEE Photonics Technology Letters	2008	25
26	Self‐aligned normally‐off metal–oxide–semiconductor n⁺⁺GaN/InAlN/GaN high electron mobility transistors	Physica Status Solidi (A) Applications and Materials Science	2015	23
27	M-Plane GaN Grown onm-Plane Sapphire by Hydride Vapor Phase Epitaxy	Japanese Journal of Applied Physics	2009	18
28	Time-resolved cathodoluminescence of InGaAs/AlGaAs tetrahedral pyramidal quantum structures	Applied Physics B: Lasers and Optics	2006	17
29	Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics	Electronics Letters	2009	17
30	Biexciton kinetics in GaN quantum wells: Time-resolved and time-integrated photoluminescence measurements	Physical Review B	2008	16
31	Off‐state breakdown in InAlN/AlN/GaN high electron mobility transistors	Physica Status Solidi C: Current Topics in Solid State Physics	2009	16
32	Low-Noise Microwave Performance of 0.1 <formula formulatype="inline"> <tex Notation="TeX">$\mu$</tex></formula>m Gate AlInN/GaN HEMTs on SiC	IEEE Microwave and Wireless Components Letters	2010	16
33	Intraband Carrier Photoexcitation in Quantum Dot Lasers	Nano Letters	2008	15
34	Noise figure improvement in semiconductor optical amplifiers by holding beam at transparency scheme	IEEE Photonics Technology Letters	2005	14
35	Optical and electronic properties of GaAs-based structures with columnar quantum dots	Applied Physics Letters	2007	13
36	Technology of integrated self-aligned E/D-mode n⁺⁺GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics	Semiconductor Science and Technology	2016	12
37	Electroluminescence and photoluminescence excitation study of asymmetric coupledGaAs∕AlxGa1−xAsV-groove quantum wires	Physical Review B	2004	8
38	Density clamping and longitudinal spatial hole burning in a gain-clamped semiconductor optical amplifier	Applied Physics Letters	2002	7
39	AlInN/GaN a suitable HEMT device for extremely high power high frequency applications	Applied Physics Letters	2007	7
40	High‐speed and low‐noise AlInN/GaN HEMTs on SiC	Physica Status Solidi (A) Applications and Materials Science	2011	7
41	Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures	Applied Physics Letters	2015	7
42	Acceleration of a Gain-Clamped Semiconductor Optical Amplifier by the Optical Speed-Up at Transparency Scheme	IEEE Photonics Technology Letters	2004	6
43	Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well	Physical Review B	2009	6
44	Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing	Physica Status Solidi C: Current Topics in Solid State Physics	2010	6
45	Exciton relaxation and level repulsion in quantum wires	Physica Status Solidi C: Current Topics in Solid State Physics	2003	4
46	1.5-µm Intraband Transitions in PbSe Quantum Dots	Japanese Journal of Applied Physics	2003	4
47	Selective GaN Epitaxy on Si(111) Substrates Using Porous Aluminum Oxide Buffer Layers	Journal of the Electrochemical Society	2006	4
48	Polariton amplification in semiconductor microcavities	Physica Status Solidi (B): Basic Research	2003	3
49	Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures	Materials Science in Semiconductor Processing	2016	3
50	Trions and Excitons in CdTe Quantum Wells: Lifetimes, Coherence, Diffusion and Localization	Physica Status Solidi (B): Basic Research	2002	1

Profile

Scientometrics

Citing Bodies

Institute of Quantum Electronics and Photonics

Top Articles