| # | Title | Journal | Year | Citations |
|---|
| 1 | Large-signal analysis of a silicon Read diode oscillator | IEEE Transactions on Electron Devices | 1969 | 1,923 |
| 2 | Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric | IEEE Transactions on Electron Devices | 2007 | 1,358 |
| 3 | FinFET-a self-aligned double-gate MOSFET scalable to 20 nm | IEEE Transactions on Electron Devices | 2000 | 1,317 |
| 4 | On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration | IEEE Transactions on Electron Devices | 1994 | 1,308 |
| 5 | A gas chromatographic air analyzer fabricated on a silicon wafer | IEEE Transactions on Electron Devices | 1979 | 1,303 |
| 6 | A reliable approach to charge-pumping measurements in MOS transistors | IEEE Transactions on Electron Devices | 1984 | 1,267 |
| 7 | Multiplication noise in uniform avalanche diodes | IEEE Transactions on Electron Devices | 1966 | 1,232 |
| 8 | The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs | IEEE Transactions on Electron Devices | 2001 | 1,224 |
| 9 | Electromigration—A brief survey and some recent results | IEEE Transactions on Electron Devices | 1969 | 1,211 |
| 10 | GaN-on-Si Power Technology: Devices and Applications | IEEE Transactions on Electron Devices | 2017 | 1,017 |
| 11 | A self-consistent iterative scheme for one-dimensional steady state transistor calculations | IEEE Transactions on Electron Devices | 1964 | 1,015 |
| 12 | Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid | IEEE Transactions on Electron Devices | 1996 | 1,007 |
| 13 | CMOS image sensors: electronic camera-on-a-chip | IEEE Transactions on Electron Devices | 1997 | 989 |
| 14 | Comparison of 6H-SiC, 3C-SiC, and Si for power devices | IEEE Transactions on Electron Devices | 1993 | 952 |
| 15 | Hot-electron-induced MOSFET degradation—Model, monitor, and improvement | IEEE Transactions on Electron Devices | 1985 | 938 |
| 16 | The resonant gate transistor | IEEE Transactions on Electron Devices | 1967 | 913 |
| 17 | 1/f noise sources | IEEE Transactions on Electron Devices | 1994 | 876 |
| 18 | Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation | IEEE Transactions on Electron Devices | 2007 | 833 |
| 19 | Short-channel effect in fully depleted SOI MOSFETs | IEEE Transactions on Electron Devices | 1989 | 821 |
| 20 | Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon | IEEE Transactions on Electron Devices | 1983 | 813 |
| 21 | A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors | IEEE Transactions on Electron Devices | 1990 | 805 |
| 22 | Electron and hole mobilities in silicon as a function of concentration and temperature | IEEE Transactions on Electron Devices | 1982 | 795 |
| 23 | Intensity enhancement in textured optical sheets for solar cells | IEEE Transactions on Electron Devices | 1982 | 786 |
| 24 | A new recombination model for device simulation including tunneling | IEEE Transactions on Electron Devices | 1992 | 770 |
| 25 | A graphical representation of the piezoresistance coefficients in silicon | IEEE Transactions on Electron Devices | 1982 | 758 |
| 26 | Scaling the Si MOSFET: from bulk to SOI to bulk | IEEE Transactions on Electron Devices | 1992 | 757 |
| 27 | An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation | IEEE Transactions on Electron Devices | 2011 | 731 |
| 28 | Transport equations for electrons in two-valley semiconductors | IEEE Transactions on Electron Devices | 1970 | 726 |
| 29 | New Generation of Predictive Technology Model for Sub-45 nm Early Design Exploration | IEEE Transactions on Electron Devices | 2006 | 726 |
| 30 | Limiting efficiency of silicon solar cells | IEEE Transactions on Electron Devices | 1984 | 725 |
| 31 | Physical modeling of spiral inductors on silicon | IEEE Transactions on Electron Devices | 2000 | 725 |
| 32 | Mechanical-thermal noise in micromachined acoustic and vibration sensors | IEEE Transactions on Electron Devices | 1993 | 715 |
| 33 | A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region | IEEE Transactions on Electron Devices | 2007 | 715 |
| 34 | Anisotropic etching of silicon | IEEE Transactions on Electron Devices | 1978 | 708 |
| 35 | Alpha-particle-induced soft errors in dynamic memories | IEEE Transactions on Electron Devices | 1979 | 705 |
| 36 | Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element | IEEE Transactions on Electron Devices | 2015 | 705 |
| 37 | Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth | IEEE Transactions on Electron Devices | 2011 | 657 |
| 38 | Theory of ballistic nanotransistors | IEEE Transactions on Electron Devices | 2003 | 652 |
| 39 | Surface states at steam-grown silicon-silicon dioxide interfaces | IEEE Transactions on Electron Devices | 1966 | 623 |
| 40 | Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces | IEEE Transactions on Electron Devices | 1980 | 615 |
| 41 | Improving resolution in photolithography with a phase-shifting mask | IEEE Transactions on Electron Devices | 1982 | 597 |
| 42 | A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking | IEEE Transactions on Electron Devices | 2007 | 587 |
| 43 | Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's | IEEE Transactions on Electron Devices | 1983 | 575 |
| 44 | Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study | IEEE Transactions on Electron Devices | 1998 | 571 |
| 45 | New insights in the relation between electron trap generation and the statistical properties of oxide breakdown | IEEE Transactions on Electron Devices | 1998 | 570 |
| 46 | A 90-nm Logic Technology Featuring Strained-Silicon | IEEE Transactions on Electron Devices | 2004 | 566 |
| 47 | Trapping effects and microwave power performance in AlGaN/GaN HEMTs | IEEE Transactions on Electron Devices | 2001 | 563 |
| 48 | Considerations for Ultimate CMOS Scaling | IEEE Transactions on Electron Devices | 2012 | 562 |
| 49 | Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's | IEEE Transactions on Electron Devices | 1994 | 560 |
| 50 | Analytical methods for the extraction of solar-cell single- and double-diode model parameters from I-V characteristics | IEEE Transactions on Electron Devices | 1987 | 556 |
