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| 2 | GaN-on-Si Power Technology: Devices and Applications | IEEE Transactions on Electron Devices | 2017 | 1,263 |
| 3 | $\kappa$ Gate Dielectric">Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric | IEEE Transactions on Electron Devices | 2007 | 1,128 |
| 4 | On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration | IEEE Transactions on Electron Devices | 1994 | 1,028 |
| 5 | The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs | IEEE Transactions on Electron Devices | 2001 | 1,028 |
| 6 | FinFET-a self-aligned double-gate MOSFET scalable to 20 nm | IEEE Transactions on Electron Devices | 2000 | 1,003 |
| 7 | Multiplication noise in uniform avalanche diodes | IEEE Transactions on Electron Devices | 1966 | 968 |
| 8 | A gas chromatographic air analyzer fabricated on a silicon wafer | IEEE Transactions on Electron Devices | 1979 | 886 |
| 9 | A reliable approach to charge-pumping measurements in MOS transistors | IEEE Transactions on Electron Devices | 1984 | 882 |
| 10 | A self-consistent iterative scheme for one-dimensional steady state transistor calculations | IEEE Transactions on Electron Devices | 1964 | 821 |
| 11 | Comparison of 6H-SiC, 3C-SiC, and Si for power devices | IEEE Transactions on Electron Devices | 1993 | 767 |
| 12 | Electromigration—A brief survey and some recent results | IEEE Transactions on Electron Devices | 1969 | 755 |
| 13 | 1/f noise sources | IEEE Transactions on Electron Devices | 1994 | 730 |
| 14 | Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation | IEEE Transactions on Electron Devices | 2007 | 724 |
| 15 | Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon | IEEE Transactions on Electron Devices | 1983 | 702 |
| 16 | Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element | IEEE Transactions on Electron Devices | 2015 | 687 |
| 17 | A new recombination model for device simulation including tunneling | IEEE Transactions on Electron Devices | 1992 | 651 |
| 18 | Hot-electron-induced MOSFET degradation—Model, monitor, and improvement | IEEE Transactions on Electron Devices | 1985 | 640 |
| 19 | Electron and hole mobilities in silicon as a function of concentration and temperature | IEEE Transactions on Electron Devices | 1982 | 631 |
| 20 | An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation | IEEE Transactions on Electron Devices | 2011 | 629 |
| 21 | Intensity enhancement in textured optical sheets for solar cells | IEEE Transactions on Electron Devices | 1982 | 625 |
| 22 | Limiting efficiency of silicon solar cells | IEEE Transactions on Electron Devices | 1984 | 620 |
| 23 | Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid | IEEE Transactions on Electron Devices | 1996 | 618 |
| 24 | CMOS image sensors: electronic camera-on-a-chip | IEEE Transactions on Electron Devices | 1997 | 607 |
| 25 | Scaling the Si MOSFET: from bulk to SOI to bulk | IEEE Transactions on Electron Devices | 1992 | 576 |
| 26 | The resonant gate transistor | IEEE Transactions on Electron Devices | 1967 | 573 |
| 27 | A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors | IEEE Transactions on Electron Devices | 1990 | 570 |
| 28 | Short-channel effect in fully depleted SOI MOSFETs | IEEE Transactions on Electron Devices | 1989 | 563 |
| 29 | Surface states at steam-grown silicon-silicon dioxide interfaces | IEEE Transactions on Electron Devices | 1966 | 553 |
| 30 | nextnano: General Purpose 3-D Simulations | IEEE Transactions on Electron Devices | 2007 | 553 |
| 31 | Transport equations for electrons in two-valley semiconductors | IEEE Transactions on Electron Devices | 1970 | 524 |
| 32 | A graphical representation of the piezoresistance coefficients in silicon | IEEE Transactions on Electron Devices | 1982 | 513 |
| 33 | Anisotropic etching of silicon | IEEE Transactions on Electron Devices | 1978 | 503 |
| 34 | A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region | IEEE Transactions on Electron Devices | 2007 | 487 |
| 35 | Measurement and Interpretation of stress in aluminum-based metallization as a function of thermal history | IEEE Transactions on Electron Devices | 1987 | 485 |
| 36 | Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces | IEEE Transactions on Electron Devices | 1980 | 480 |
| 37 | Doping-Less Tunnel Field Effect Transistor: Design and Investigation | IEEE Transactions on Electron Devices | 2013 | 480 |
| 38 | Pentacene-based organic thin-film transistors | IEEE Transactions on Electron Devices | 1997 | 477 |
| 39 | Trapping effects and microwave power performance in AlGaN/GaN HEMTs | IEEE Transactions on Electron Devices | 2001 | 471 |
| 40 | Electronic switching in phase-change memories | IEEE Transactions on Electron Devices | 2004 | 464 |
| 41 | Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interface | IEEE Transactions on Electron Devices | 1983 | 454 |
| 42 | Theory of ballistic nanotransistors | IEEE Transactions on Electron Devices | 2003 | 451 |
| 43 | Mechanical-thermal noise in micromachined acoustic and vibration sensors | IEEE Transactions on Electron Devices | 1993 | 444 |
| 44 | A 90-nm logic technology featuring strained-silicon | IEEE Transactions on Electron Devices | 2004 | 441 |
| 45 | Considerations for Ultimate CMOS Scaling | IEEE Transactions on Electron Devices | 2012 | 437 |
| 46 | Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications | IEEE Transactions on Electron Devices | 2006 | 425 |
| 47 | Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET | IEEE Transactions on Electron Devices | 1982 | 421 |
| 48 | Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature | IEEE Transactions on Electron Devices | 1975 | 420 |
| 49 | Metal nanocrystal memories. I. Device design and fabrication | IEEE Transactions on Electron Devices | 2002 | 417 |
| 50 | Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's | IEEE Transactions on Electron Devices | 1983 | 415 |
