2.3(top 7%)
Impact Factor
2.5(top 7%)
extended IF
96(top 4%)
H-Index
3.6K
authors
5.8K
papers
82.5K
citations
1.8K
citing journals
37.4K
citing authors

Most Cited Articles of Applied Physics Express in 2013

TitleYearCitations
High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3Thin Film as N-Type Layer2013224
Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts2013178
270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power2013139
High Thermoelectric Power Factor in a Carrier-Doped Magnetic Semiconductor CuFeS22013136
InGaN Light-Emitting Diodes onc-Face Sapphire Substrates in Green Gap Spectral Range2013123
Cu2Sn1-xGexS3(x= 0.17) Thin-Film Solar Cells with High Conversion Efficiency of 6.0%2013119
Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes2013115
Enhancement of Red Persistent Luminescence in Cr3+-Doped ZnGa2O4Phosphors by Bi2O3Codoping2013109
Spin-Torque Oscillator Based on Magnetic Tunnel Junction with a Perpendicularly Magnetized Free Layer and In-Plane Magnetized Polarizer2013109
Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy201394
Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors201391
Challenge to the Synthesis of α''-Fe16N2Compound Nanoparticle with High Saturation Magnetization for Rare Earth Free New Permanent Magnetic Material201387
Anomalous Nernst Effect in L10-FePt/MnGa Thermopiles for New Thermoelectric Applications201385
Inch-Size Solution-Processed Single-Crystalline Films of High-Mobility Organic Semiconductors201384
Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate201383
Cobalt Hexacyanoferrate as Cathode Material for Na+Secondary Battery201383
Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride201379
1 Ω On-Resistance Diamond Vertical-Schottky Barrier Diode Operated at 250 °C201378
A Comparative Computational Study of Structures, Diffusion, and Dopant Interactions between Li and Na Insertion into Si201370
InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications201369
Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film201363
Large Emission Power over 2 µW with HighQFactor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator201361
Analysis of Stochastic Effect in Line-and-Space Resist Patterns Fabricated by Extreme Ultraviolet Lithography201360
Large Seebeck Coefficients of Fe2TiSn and Fe2TiSi: First-Principles Study201359
Oscillations up to 1.40 THz from Resonant-Tunneling-Diode-Based Oscillators with Integrated Patch Antennas201357