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citing authors

Most Cited Articles of Applied Physics Express

TitleYearCitations
Enhanced Conversion Efficiencies of Cu2ZnSnS4-Based Thin Film Solar Cells by Using Preferential Etching Technique2008658
Structure of Silicene Grown on Ag(111)2012454
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy2012362
AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%2012339
531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates2009312
Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency2017285
Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions2008274
High Mobility in a Stable Transparent Perovskite Oxide2012270
Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates2008270
Near-band-edge optical responses of solution-processed organic–inorganic hybrid perovskite CH3NH3PbI3on mesoporous TiO2electrodes2014239
Very High Mobility in Solution-Processed Organic Thin-Film Transistors of Highly Ordered [1]Benzothieno[3,2-b]benzothiophene Derivatives2009238
High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3Thin Film as N-Type Layer2013225
Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy2015220
Development of X-ray-induced afterglow characterization system2014218
510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate2009213
1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation2015209
High-Efficiency Oxide Solar Cells with ZnO/Cu2O Heterojunction Fabricated on Thermally Oxidized Cu2O Sheets2011208
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes2010204
Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer2010196
Nanoparticle-Stabilized Cholesteric Blue Phases2009196
Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts2013192
High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact2015190
Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss2016188
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching2008184
Highly compact TiO2layer for efficient hole-blocking in perovskite solar cells2014181