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1Enhanced Conversion Efficiencies of Cu2ZnSnS4-Based Thin Film Solar Cells by Using Preferential Etching TechniqueApplied Physics Express0739
2Structure of Silicene Grown on Ag(111)Applied Physics Express2012518
3Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam EpitaxyApplied Physics Express2012474
4AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%Applied Physics Express2012406
5Hybrid quantum systems based on magnonicsApplied Physics Express2019404
6Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiencyApplied Physics Express2017395
7531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN SubstratesApplied Physics Express0349
8Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3SubstratesApplied Physics Express2008342
9High Mobility in a Stable Transparent Perovskite OxideApplied Physics Express2012338
10Development of X-ray-induced afterglow characterization systemApplied Physics Express2014306
11Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel JunctionsApplied Physics Express0302
12Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxyApplied Physics Express2015288
131.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operationApplied Physics Express2015278
14Near-band-edge optical responses of solution-processed organic–inorganic hybrid perovskite CH3NH3PbI3on mesoporous TiO2electrodesApplied Physics Express2014267
15Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction lossApplied Physics Express2016260
16High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3Thin Film as N-Type LayerApplied Physics Express2013257
17Very High Mobility in Solution-Processed Organic Thin-Film Transistors of Highly Ordered [1]Benzothieno[3,2-b]benzothiophene DerivativesApplied Physics Express2009254
18Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic ContactsApplied Physics Express2013251
19Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking LayerApplied Physics Express2010241
20510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN SubstrateApplied Physics Express0239
21Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting DiodesApplied Physics Express2010233
22High-Efficiency Oxide Solar Cells with ZnO/Cu2O Heterojunction Fabricated on Thermally Oxidized Cu2O SheetsApplied Physics Express2011233
23Nanoparticle-Stabilized Cholesteric Blue PhasesApplied Physics Express2009230
24High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contactApplied Physics Express2015227
25Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum WellsApplied Physics Express2011220
26Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN SubstratesApplied Physics Express2010218
27A 271.8 nm deep-ultraviolet laser diode for room temperature operationApplied Physics Express2019217
28Development of InGaN-based red LED grown on (0001) polar surfaceApplied Physics Express2014216
29GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet EtchingApplied Physics Express0215
30Giant Seebeck coefficient in semiconducting single-wall carbon nanotube filmApplied Physics Express2014205
31A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating FilmApplied Physics Express0201
32Highly compact TiO2layer for efficient hole-blocking in perovskite solar cellsApplied Physics Express2014199
33Indication of current-injection lasing from an organic semiconductorApplied Physics Express2019198
34Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxyApplied Physics Express2017196
35Voltage-Assisted Magnetization Switching in Ultrathin Fe80Co20Alloy LayersApplied Physics Express0190
36Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk SubstratesApplied Physics Express2008186
37Growth of Core–Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase EpitaxyApplied Physics Express0185
38Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current InjectionApplied Physics Express0183
39Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal OxidationApplied Physics Express0183
40Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN NanocolumnsApplied Physics Express0179
41High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$Applied Physics Express2011177
42Room-Temperature Electron Spin Transport in a Highly Doped Si ChannelApplied Physics Express2011177
43Thermoelectric Properties of Mineral Tetrahedrites Cu$_{10}$Tr$_{2}$Sb$_{4}$S$_{13}$ with Low Thermal ConductivityApplied Physics Express2012176
44Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN SubstratesApplied Physics Express2009175
45Spin dice: A scalable truly random number generator based on spintronicsApplied Physics Express2014174
46Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kVApplied Physics Express2014172
47High-Yield Separation of Metallic and Semiconducting Single-Wall Carbon Nanotubes by Agarose Gel ElectrophoresisApplied Physics Express0169
48Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDsApplied Physics Express2017169
49Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room TemperatureApplied Physics Express2011167
50Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphireApplied Physics Express2016166