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Applied Physics Express
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Top Articles
Applied Physics Express
Physics
,
Applied Physics
2.4
(top 7%)
Impact Factor
2.6
(top 7%)
extended IF
98
(top 4%)
H-Index
3.6K
authors
5.8K
papers
85.7K
citations
1.8K
citing journals
37.4K
citing authors
Most Cited Articles of Applied Physics Express
Title
Year
Citations
Enhanced Conversion Efficiencies of Cu2ZnSnS4-Based Thin Film Solar Cells by Using Preferential Etching Technique
2008
658
Structure of Silicene Grown on Ag(111)
2012
454
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
2012
362
AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
2012
339
531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
2009
312
Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
2017
285
Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions
2008
274
High Mobility in a Stable Transparent Perovskite Oxide
2012
270
Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates
2008
270
Near-band-edge optical responses of solution-processed organic–inorganic hybrid perovskite CH3NH3PbI3on mesoporous TiO2electrodes
2014
239
Very High Mobility in Solution-Processed Organic Thin-Film Transistors of Highly Ordered [1]Benzothieno[3,2-b]benzothiophene Derivatives
2009
238
High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3Thin Film as N-Type Layer
2013
225
Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy
2015
220
Development of X-ray-induced afterglow characterization system
2014
218
510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate
2009
213
1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
2015
209
High-Efficiency Oxide Solar Cells with ZnO/Cu2O Heterojunction Fabricated on Thermally Oxidized Cu2O Sheets
2011
208
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
2010
204
Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
2010
196
Nanoparticle-Stabilized Cholesteric Blue Phases
2009
196
Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts
2013
192
High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
2015
190
Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss
2016
188
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
2008
184
Highly compact TiO2layer for efficient hole-blocking in perovskite solar cells
2014
181
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How are inpact factors calculated?
The impact factor (IF) is calculated by counting citations from peer-reviewed journals only.
extended IF
also counts citations from books and conference papers. However, no patent, abstract, working papers, online documents, etc., are covered.
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