Applied Physics Express

2.2(top 20%)

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5.8K(top 5%)

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93.5K(top 5%)

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100(top 5%)

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2.2(top 20%)

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6.6K

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110.2K

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147(top 5%)

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Top Articles

#	Title	Journal	Year	Citations
1	Enhanced Conversion Efficiencies of Cu₂ZnSnS₄-Based Thin Film Solar Cells by Using Preferential Etching Technique	Applied Physics Express	0	739
2	Structure of Silicene Grown on Ag(111)	Applied Physics Express	2012	518
3	Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy	Applied Physics Express	2012	474
4	AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%	Applied Physics Express	2012	406
5	Hybrid quantum systems based on magnonics	Applied Physics Express	2019	404
6	Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency	Applied Physics Express	2017	395
7	531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates	Applied Physics Express	0	349
8	Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga₂O₃Substrates	Applied Physics Express	2008	342
9	High Mobility in a Stable Transparent Perovskite Oxide	Applied Physics Express	2012	338
10	Development of X-ray-induced afterglow characterization system	Applied Physics Express	2014	306
11	Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions	Applied Physics Express	0	302
12	Homoepitaxial growth of β-Ga₂O₃layers by halide vapor phase epitaxy	Applied Physics Express	2015	288
13	1.8 mΩ·cm²vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation	Applied Physics Express	2015	278
14	Near-band-edge optical responses of solution-processed organic–inorganic hybrid perovskite CH₃NH₃PbI₃on mesoporous TiO₂electrodes	Applied Physics Express	2014	267
15	Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss	Applied Physics Express	2016	260
16	High-Efficiency Cu₂O-Based Heterojunction Solar Cells Fabricated Using a Ga₂O₃Thin Film as N-Type Layer	Applied Physics Express	2013	257
17	Very High Mobility in Solution-Processed Organic Thin-Film Transistors of Highly Ordered [1]Benzothieno[3,2-b]benzothiophene Derivatives	Applied Physics Express	2009	254
18	Si-Ion Implantation Doping in β-Ga₂O₃and Its Application to Fabrication of Low-Resistance Ohmic Contacts	Applied Physics Express	2013	251
19	Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer	Applied Physics Express	2010	241
20	510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate	Applied Physics Express	0	239
21	Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes	Applied Physics Express	2010	233
22	High-Efficiency Oxide Solar Cells with ZnO/Cu₂O Heterojunction Fabricated on Thermally Oxidized Cu₂O Sheets	Applied Physics Express	2011	233
23	Nanoparticle-Stabilized Cholesteric Blue Phases	Applied Physics Express	2009	230
24	High-mobility β-Ga₂O₃($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact	Applied Physics Express	2015	227
25	Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells	Applied Physics Express	2011	220
26	Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates	Applied Physics Express	2010	218
27	A 271.8 nm deep-ultraviolet laser diode for room temperature operation	Applied Physics Express	2019	217
28	Development of InGaN-based red LED grown on (0001) polar surface	Applied Physics Express	2014	216
29	GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching	Applied Physics Express	0	215
30	Giant Seebeck coefficient in semiconducting single-wall carbon nanotube film	Applied Physics Express	2014	205
31	A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film	Applied Physics Express	0	201
32	Highly compact TiO₂layer for efficient hole-blocking in perovskite solar cells	Applied Physics Express	2014	199
33	Indication of current-injection lasing from an organic semiconductor	Applied Physics Express	2019	198
34	Ge doping of β-Ga₂O₃ films grown by plasma-assisted molecular beam epitaxy	Applied Physics Express	2017	196
35	Voltage-Assisted Magnetization Switching in Ultrathin Fe₈₀Co₂₀Alloy Layers	Applied Physics Express	0	190
36	Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates	Applied Physics Express	2008	186
37	Growth of Core–Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy	Applied Physics Express	0	185
38	Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection	Applied Physics Express	0	183
39	Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation	Applied Physics Express	0	183
40	Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns	Applied Physics Express	0	179
41	High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$	Applied Physics Express	2011	177
42	Room-Temperature Electron Spin Transport in a Highly Doped Si Channel	Applied Physics Express	2011	177
43	Thermoelectric Properties of Mineral Tetrahedrites Cu$_{10}$Tr$_{2}$Sb$_{4}$S$_{13}$ with Low Thermal Conductivity	Applied Physics Express	2012	176
44	Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates	Applied Physics Express	2009	175
45	Spin dice: A scalable truly random number generator based on spintronics	Applied Physics Express	2014	174
46	Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV	Applied Physics Express	2014	172
47	High-Yield Separation of Metallic and Semiconducting Single-Wall Carbon Nanotubes by Agarose Gel Electrophoresis	Applied Physics Express	0	169
48	Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs	Applied Physics Express	2017	169
49	Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature	Applied Physics Express	2011	167
50	Annealing of an AlN buffer layer in N₂–CO for growth of a high-quality AlN film on sapphire	Applied Physics Express	2016	166

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