# | Title | Journal | Year | Citations |
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1 | Quantum dot heterostructures: Fabrication, properties, lasers (Review) | Semiconductors | 1998 | 319 |
2 | The history and future of semiconductor heterostructures | Semiconductors | 1998 | 301 |
3 | Deep level centers in silicon carbide: A review | Semiconductors | 1999 | 241 |
4 | Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs | Semiconductors | 2006 | 213 |
5 | Mechanisms of current flow in metal-semiconductor ohmic contacts | Semiconductors | 2007 | 162 |
6 | Semiconductor nanowhiskers: Synthesis, properties, and applications | Semiconductors | 2009 | 158 |
7 | AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs | Semiconductors | 2009 | 143 |
8 | Chalcogenide passivation of III–V semiconductor surfaces | Semiconductors | 1998 | 141 |
9 | Magnetic properties of carbon structures | Semiconductors | 2004 | 140 |
10 | Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties | Semiconductors | 2000 | 104 |
11 | Electrical and optical properties of pristine and polymerized fullerenes | Semiconductors | 2001 | 103 |
12 | Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density | Semiconductors | 2006 | 96 |
13 | On the electron affinity of silicon carbide polytypes | Semiconductors | 2007 | 86 |
14 | Solar photovoltaics: Trends and prospects | Semiconductors | 2004 | 85 |
15 | Ab initio Studies of the Band Parameters of III–V and II–VI Zinc-Blende Semiconductors | Semiconductors | 2005 | 80 |
16 | Quantum dot solar concentrators | Semiconductors | 2004 | 73 |
17 | Pressure dependence of the dielectric and optical properties of wide-gap semiconductors | Semiconductors | 1998 | 71 |
18 | Semiconductor photoelectric converters for the ultraviolet region of the spectrum | Semiconductors | 2003 | 67 |
19 | Electronic and vibrational states in InN and InxGa1−x N solid solutions | Semiconductors | 2004 | 66 |
20 | Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures | Semiconductors | 2004 | 66 |
21 | Tin telluride based thermoelectrical alloys | Semiconductors | 1998 | 64 |
22 | Quantum dots: Paradigm changes in semiconductor physics | Semiconductors | 1999 | 63 |
23 | Photoelectric properties of ZnO films doped with Cu and Ag acceptor impurities | Semiconductors | 2003 | 59 |
24 | Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles | Semiconductors | 2001 | 58 |
25 | Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates | Semiconductors | 2001 | 58 |
26 | Physics of switching and memory effects in chalcogenide glassy semiconductors | Semiconductors | 2012 | 58 |
27 | Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands | Semiconductors | 1999 | 57 |
28 | Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence | Semiconductors | 2010 | 56 |
29 | Modeling improvement of spectral response of solar cells by deployment of spectral converters containing semiconductor nanocrystals | Semiconductors | 2004 | 55 |
30 | Wide-gap semiconductors for high-power electronics | Semiconductors | 1999 | 53 |
31 | Evaluation of physical parameters for the group III nitrates: BN, AlN, GaN, and InN | Semiconductors | 2002 | 52 |
32 | Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT | Semiconductors | 2011 | 52 |
33 | Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO[sub 2] Films | Semiconductors | 2005 | 51 |
34 | Material-induced shunts in multicrystalline silicon solar cells | Semiconductors | 2007 | 51 |
35 | A study of luminescence centers related to copper and oxygen in ZnSe | Semiconductors | 2001 | 50 |
36 | Study of the effect of the acid-base surface properties of ZnO, Fe2O3 and ZnFe2O4 oxides on their gas sensitivity to ethanol vapor | Semiconductors | 2013 | 50 |
37 | EBIC measurements of small diffusion length in semiconductor structures | Semiconductors | 2007 | 49 |
38 | Boundary instability of a two-dimensional electron fluid | Semiconductors | 2008 | 49 |
39 | Thermoelectric figure of merit of Ag2Se with Ag and Se excess | Semiconductors | 2009 | 49 |
40 | Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films | Semiconductors | 2004 | 48 |
41 | The role of surface diffusion of adatoms in the formation of nanowire crystals | Semiconductors | 2006 | 48 |
42 | Device characteristics of long-wavelength lasers based on self-organized quantum dots | Semiconductors | 2012 | 48 |
43 | Surface functional composition and sensor properties of ZnO, Fe2O3, and ZnFe2O4 | Semiconductors | 2013 | 48 |
44 | The dominant mechanisms of charge-carrier scattering in lead telluride | Semiconductors | 1997 | 47 |
45 | Quantized conductance in silicon quantum wires | Semiconductors | 2002 | 47 |
46 | Transformation of the plasmon spectrum in a grating-gate transistor structure with spatially modulated two-dimensional electron channel | Semiconductors | 2010 | 47 |
47 | On the specific features of the density of states of epitaxial graphene formed on metal and semiconductor substrates | Semiconductors | 2013 | 47 |
48 | On an exciton with a spatially separated electron and hole in quasi-zero-dimensional semiconductor nanosystems | Semiconductors | 2013 | 46 |
49 | Hopping conduction via strongly localized impurity states of indium in PbTe and its solid solutions | Semiconductors | 2002 | 45 |
50 | Two-dimensional p-n junction under equilibrium conditions | Semiconductors | 2002 | 44 |