| # | Title | Journal | Year | Citations |
|---|
| 1 | An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes | Solid-State Electronics | 1962 | 1,360 |
| 2 | Field and thermionic-field emission in Schottky barriers | Solid-State Electronics | 1966 | 1,234 |
| 3 | Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review | Solid-State Electronics | 1996 | 1,196 |
| 4 | Experiments on Ge-GaAs heterojunctions | Solid-State Electronics | 1962 | 1,018 |
| 5 | A review of some charge transport properties of silicon | Solid-State Electronics | 1977 | 979 |
| 6 | Problems related to p-n junctions in silicon | Solid-State Electronics | 1961 | 936 |
| 7 | Models for contacts to planar devices | Solid-State Electronics | 1972 | 875 |
| 8 | Multiple-gate SOI MOSFETs | Solid-State Electronics | 2004 | 815 |
| 9 | Micropower energy harvesting | Solid-State Electronics | 2009 | 770 |
| 10 | A unified mobility model for device simulation—I. Model equations and concentration dependence | Solid-State Electronics | 1992 | 752 |
| 11 | Measurement of the ionization rates in diffused silicon p-n junctions | Solid-State Electronics | 1970 | 718 |
| 12 | Measurements of bandgap narrowing in Si bipolar transistors | Solid-State Electronics | 1976 | 691 |
| 13 | Current transport in metal-semiconductor barriers | Solid-State Electronics | 1966 | 670 |
| 14 | A single-frequency approximation for interface-state density determination | Solid-State Electronics | 1980 | 654 |
| 15 | Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K | Solid-State Electronics | 1968 | 650 |
| 16 | Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors | Solid-State Electronics | 1966 | 629 |
| 17 | Some aspects of semiconducting barium titanate | Solid-State Electronics | 1964 | 619 |
| 18 | Field emission from carbon nanotubes: the first five years | Solid-State Electronics | 2001 | 580 |
| 19 | A charge-sheet model of the MOSFET | Solid-State Electronics | 1978 | 559 |
| 20 | Preparation, characteristics and photovoltaic properties of cuprous oxide—a review | Solid-State Electronics | 1986 | 552 |
| 21 | A quasi-static technique for MOS C-V and surface state measurements | Solid-State Electronics | 1970 | 543 |
| 22 | On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers | Solid-State Electronics | 1986 | 526 |
| 23 | Electron tunneling and contact resistance of metal-silicon contact barriers | Solid-State Electronics | 1970 | 499 |
| 24 | Performance estimation of junctionless multigate transistors | Solid-State Electronics | 2010 | 487 |
| 25 | Bariumtitanat als sperrschichthalbleiter | Solid-State Electronics | 1961 | 482 |
| 26 | Switching properties of thin Nio films | Solid-State Electronics | 1964 | 463 |
| 27 | Ohmic contacts for GaAs devices | Solid-State Electronics | 1967 | 463 |
| 28 | Solar cell fill factors: General graph and empirical expressions | Solid-State Electronics | 1981 | 452 |
| 29 | Metal-semiconductor surface barriers | Solid-State Electronics | 1966 | 450 |
| 30 | Low frequency noise in MOS transistors—I Theory | Solid-State Electronics | 1968 | 447 |
| 31 | Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments | Solid-State Electronics | 1970 | 439 |
| 32 | Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions | Solid-State Electronics | 1966 | 427 |
| 33 | A review of emerging non-volatile memory (NVM) technologies and applications | Solid-State Electronics | 2016 | 425 |
| 34 | Complementary tunneling transistor for low power application | Solid-State Electronics | 2004 | 421 |
| 35 | The effects of contact size and non-zero metal resistance on the determination of specific contact resistance | Solid-State Electronics | 1982 | 413 |
| 36 | Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures | Solid-State Electronics | 1965 | 408 |
| 37 | Electron and hole ionization rates in epitaxial silicon at high electric fields | Solid-State Electronics | 1973 | 407 |
| 38 | A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime | Solid-State Electronics | 1992 | 402 |
| 39 | Recombination enhanced defect reactions | Solid-State Electronics | 1978 | 387 |
| 40 | Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers | Solid-State Electronics | 1969 | 379 |
| 41 | Fine structure of heat flow path in semiconductor devices: A measurement and identification method | Solid-State Electronics | 1988 | 379 |
| 42 | A simple theory to predict the threshold voltage of short-channel IGFET's | Solid-State Electronics | 1974 | 376 |
| 43 | Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory | Solid-State Electronics | 1974 | 370 |
| 44 | A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers | Solid-State Electronics | 1991 | 368 |
| 45 | Current transport in metal-semiconductor-metal (MSM) structures | Solid-State Electronics | 1971 | 365 |
| 46 | Compound tellurides and their alloys for peltier cooling—A review | Solid-State Electronics | 1972 | 359 |
| 47 | A review of the theory and technology for ohmic contacts to group III–V compound semiconductors | Solid-State Electronics | 1975 | 356 |
| 48 | The Richardson constant for thermionic emission in Schottky barrier diodes | Solid-State Electronics | 1965 | 351 |
| 49 | An investigation of steady-state velocity overshoot in silicon | Solid-State Electronics | 1985 | 338 |
| 50 | Contact resistance in organic thin film transistors | Solid-State Electronics | 2003 | 337 |
