How is the research output of TSMC?

Researchers at TSMC have published 1327 articles, which have been cited by 13655. Of these publications, 5 articles have been published in exceptional journals such as Nature and Science.

TSMC Top Articles

1.3K(top 11%)

articles

13.7K(top 14%)

citations

200(top 12%)

★★ articles

5(top 12%)

★★★ articles

2.2(top 27%)

Avg IF

45(top 17%)

H-Index

79(top 16%)

G-Index

224

journals

Most Cited Articles of TSMC in 2018

Title	Journal	Year	Citations
Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor InSe	Nano Letters	2018	293
Network Monitoring in Software-Defined Networking: A Review	IEEE Systems Journal	2018	53
High-speed, high-reliability GaN power device with integrated gate driver		2018	35
A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination		2018	34
Proton-ELISA: Electrochemical immunoassay on a dual-gated ISFET array	Biosensors and Bioelectronics	2018	31
High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology	IEEE Journal of Selected Topics in Quantum Electronics	2018	28
Ultralow Defect Density at Sub-0.5 nm HfO/SiGe Interfaces via Selective Oxygen Scavenging	ACS Applied Materials & Interfaces	2018	21
A 0.5-V 1.6-mW 2.4-GHz Fractional-N All-Digital PLL for Bluetooth LE With PVT-Insensitive TDC Using Switched-Capacitor Doubler in 28-nm CMOS	IEEE Journal of Solid-State Circuits	2018	21
An N40 256K×44 embedded RRAM macro with SL-precharge SA and low-voltage current limiter to improve read and write performance		2018	20
InFO_AiP Technology for High Performance and Compact 5G Millimeter Wave System Integration		2018	20
High-Capacitance-Density ${p}$ -GaN Gate Capacitors for High-Frequency Power Integration	IEEE Electron Device Letters	2018	19
Design of a 60-GHz High-Output Power Stacked- FET Power Amplifier Using Transformer-Based Voltage-Type Power Combining in 65-nm CMOS	IEEE Transactions on Microwave Theory and Techniques	2018	18
Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs		2018	18
A 256×256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6dB interference suppression		2018	15
A 28NM Integrated True Random Number Generator Harvesting Entropy from MRAM		2018	15
Time-zero-variability and BTI impact on advanced FinFET device and circuit reliability	Microelectronics Reliability	2018	12
High Performance, High Density RDL for Advanced Packaging		2018	12
3D Heterogeneous Integration with Multiple Stacking Fan-Out Package		2018	12
An Electromagnetic Bandgap Structure Integrated With RF LNA Using Integrated Fan-Out Wafer-Level Package for Gigahertz Noise Suppression	IEEE Transactions on Microwave Theory and Techniques	2018	11
A 44-fJ/Conversion Step 200-MS/s Pipeline ADC Employing Current-Mode MDACs	IEEE Journal of Solid-State Circuits	2018	9
Robust label-free microRNA detection using one million ISFET array	Biomedical Microdevices	2018	9
Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers	Applied Surface Science	2018	8
Gated CMOS-MEMS thermal-piezoresistive oscillator-based PM2.5 sensor with enhanced particle collection efficiency		2018	8
Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors		2018	8
Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations	Journal of Physics Condensed Matter	2018	7

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Most Cited Articles of TSMC in 2018