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#	Title	Journal	Year	Citations
1	Algorithmic Design of CMOS LNAs and PAs for 60-GHz Radio	IEEE Journal of Solid-State Circuits	2007	390
2	Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices	IEEE Electron Device Letters	2007	302
3	Falling in love with online games: The uses and gratifications perspective	Computers in Human Behavior	2010	301
4	De-embedding transmission line measurements for accurate modeling of IC designs	IEEE Transactions on Electron Devices	2006	274
5	Pi-Gate SOI MOSFET	IEEE Electron Device Letters	2001	229
6	Wafer Map Failure Pattern Recognition and Similarity Ranking for Large-Scale Data Sets	IEEE Transactions on Semiconductor Manufacturing	2015	197
7	Enhancing Frequency Response Control by DFIGs in the High Wind Penetrated Power Systems	IEEE Transactions on Power Systems	2011	189
8	45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell		2009	175
9	The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks	IEEE Journal of Solid-State Circuits	2006	165
10	High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation	IEEE Electron Device Letters	2013	160
11	A hybrid of genetic algorithm and particle swarm optimization for solving bi-level linear programming problem – A case study on supply chain model	Applied Mathematical Modelling	2011	149
12	5nm-gate nanowire FinFET		2004	146
13	15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications		2020	138
14	An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling	IEEE Electron Device Letters	2001	133
15	Wafer-Level Integration of an Advanced Logic-Memory System Through the Second-Generation CoWoS Technology	IEEE Transactions on Electron Devices	2017	115
16	An Agile VCO Frequency Calibration Technique for a 10-GHz CMOS PLL	IEEE Journal of Solid-State Circuits	2007	113
17	Improved three-point formulas considering the interface conditions in the finite-difference analysis of step-index optical devices	Journal of Lightwave Technology	2000	101
18	Discrete Dopant Fluctuations in 20-nm/15-nm-Gate Planar CMOS	IEEE Transactions on Electron Devices	2008	101
19	A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs-from single electron emission to PBTI recovery transient	IEEE Transactions on Electron Devices	2006	98
20	High-performance integrated fan-out wafer level packaging (InFO-WLP): Technology and system integration		2012	97
21	Network Monitoring in Software-Defined Networking: A Review	IEEE Systems Journal	2018	96
22	A Bluetooth Low-Energy Transceiver With 3.7-mW All-Digital Transmitter, 2.75-mW High-IF Discrete-Time Receiver, and TX/RX Switchable On-Chip Matching Network	IEEE Journal of Solid-State Circuits	2017	95
23	Optimization of the Wind Turbine Layout and Transmission System Planning for a Large-Scale Offshore WindFarm by AI Technology	IEEE Transactions on Industry Applications	2014	91
24	Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI	IEEE Nanotechnology Magazine	2018	87
25	Distributed Generation Interconnection Planning: A Wind Power Case Study	IEEE Transactions on Smart Grid	2011	86
26	Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs	IEEE Transactions on Electron Devices	2013	85
27	A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept	IEEE Microwave and Wireless Components Letters	2007	83
28	An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory	IEEE Journal of Solid-State Circuits	2013	83
29	Self-heating effect in FinFETs and its impact on devices reliability characterization		2014	83
30	16.4 An 89TOPS/W and 16.3TOPS/mm² All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications		2021	83
31	A physical model for the hysteresis phenomenon of the ultrathin ZrO2 film	Journal of Applied Physics	2002	82
32	Customer negative events and employee service sabotage: The roles of employee hostility, personality and group affective tone	Work and Stress	2013	81
33	Noise Reduction Using Compensation Capacitance for Bend Discontinuities of Differential Transmission Lines	IEEE Transactions on Advanced Packaging	2006	80
34	A 7nm CMOS platform technology featuring 4^th generation FinFET transistors with a 0.027um² high density 6-T SRAM cell for mobile SoC applications		2016	80
35	A 25–75 GHz Broadband Gilbert-Cell Mixer Using 90-nm CMOS Technology	IEEE Microwave and Wireless Components Letters	2007	78
36	Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application		2004	77
37	A Photovoltaic-Driven and Energy-Autonomous CMOS Implantable Sensor	IEEE Transactions on Biomedical Circuits and Systems	2012	76
38	A system for online detection and classification of wafer bin map defect patterns for manufacturing intelligence	International Journal of Production Research	2013	76
39	Voltage-controlled liquid-crystal terahertz phase shifter with indium–tin–oxide nanowhiskers as transparent electrodes	Optics Letters	2014	76
40	A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices	IEEE Electron Device Letters	2011	75
41	A wideband CMOS sigma-delta modulator with incremental data weighted averaging	IEEE Journal of Solid-State Circuits	2002	73
42	Neutron-Induced Charge Collection Simulation of Bulk FinFET SRAMs Compared With Conventional Planar SRAMs	IEEE Transactions on Device and Materials Reliability	2011	71
43	Dynamic multiple responses by ideal solution analysis	European Journal of Operational Research	2004	70
44	Random telegraph noise in highly scaled nMOSFETs		2009	70
45	Boron uphill diffusion during ultrashallow junction formation	Applied Physics Letters	2003	69
46	On-Resistance Degradation Induced by Hot-Carrier Injection in LDMOS Transistors With STI in the Drift Region	IEEE Electron Device Letters	2008	69
47	60-GHz PA and LNA in 90-nm RF-CMOS		0	68
48	25 nm CMOS Omega FETs		0	67
49	A 16 nm 128 Mb SRAM in High-<formula formulatype="inline"> <tex Notation="TeX">$\kappa$</tex></formula> Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications	IEEE Journal of Solid-State Circuits	2015	66
50	Design and analysis of CMOS broad-band compact high-linearity modulators for gigabit microwave/millimeter-wave applications	IEEE Transactions on Microwave Theory and Techniques	2006	65

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