Department of Electronics

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#	Title	Journal	Year	Citations
1	Quantum teleportation using three-particle entanglement	Physical Review A	1998	770
2	Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2	Journal of Applied Physics	1999	310
3	Single quantum dots emit single photons at a time: Antibunching experiments	Applied Physics Letters	2001	213
4	Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias	Applied Physics Letters	2002	181
5	High quantum efficiency for a porous silicon light emitting diode under pulsed operation	Applied Physics Letters	1995	129
6	Carrier lifetime measurements using free carrier absorption transients. I. Principle and injection dependence	Journal of Applied Physics	1998	122
7	Doping-induced band edge displacements and band gap narrowing in 3C–, 4H–, 6H–SiC, and Si	Journal of Applied Physics	1998	120
8	Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide	Journal of Luminescence	1998	108
9	Magneto-Hydrodynamic Waves in a Compressible Fluid Conductor	Nature	1950	106
10	Experiments on long wavelength (1550 nm) "plug and play" quantum cryptography systems	Optics Express	1999	94
11	Authority-based user authentication in quantum key distribution	Physical Review A	2000	93
12	Design and analysis of double-fused 1.55-μm vertical-cavity lasers	IEEE Journal of Quantum Electronics	1997	87
13	Carrier lifetime measurements using free carrier absorption transients. II. Lifetime mapping and effects of surface recombination	Journal of Applied Physics	1998	85
14	Double‐fused 1.52‐μm vertical‐cavity lasers	Applied Physics Letters	1995	81
15	Lowering power consumption in clock by using globally asynchronous locally synchronous design style		1999	80
16	Noise accumulation and BER estimates in concatenated nonlinear optoelectronic repeaters	IEEE Photonics Technology Letters	1997	75
17	Edge-AI in LoRa-based Health Monitoring: Fall Detection System with Fog Computing and LSTM Recurrent Neural Networks		2019	70
18	Electrically active point defects in n-type 4H–SiC	Journal of Applied Physics	1998	69
19	Self-Gating Effect in the Electron Y-Branch Switch	Physical Review Letters	1999	68
20	Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide	Journal of Applied Physics	1997	65
21	Oxidation of silicon–germanium alloys. I. An experimental study	Journal of Applied Physics	1997	62
22	Hydride vapor phase epitaxy revisited	IEEE Journal of Selected Topics in Quantum Electronics	1997	61
23	Formation of wide and deep pores in silicon by electrochemical etching	Materials Science and Engineering B: Solid-State Materials for Advanced Technology	2000	59
24	Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC	Applied Physics Letters	2001	59
25	Thermally stable low ohmic contacts to p-type 6HSiC using cobalt silicides	Solid-State Electronics	1996	57
26	Characterization of a porous silicon diode with efficient and tunable electroluminescence	Journal of Applied Physics	1996	52
27	Formation of three-dimensional microstructures by electrochemical etching of silicon	Applied Physics Letters	2001	52
28	Ion implantation of silicon carbide	Nuclear Instruments & Methods in Physics Research B	2002	52
29	Designing logic functions using an electron waveguide Y‐branch switch	Journal of Applied Physics	1996	51
30	A hardware efficient control of memory addressing for high-performance FFT processors	IEEE Transactions on Signal Processing	2000	51
31	Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide	Solid-State Electronics	2000	48
32	Radio Reflexions from a Column of Ionized Gas	Nature	1951	47
33	Semiconductor photonic crystals for optoelectronics	Physica E: Low-Dimensional Systems and Nanostructures	2004	47
34	Transient enhanced diffusion of implanted boron in 4H-silicon carbide	Applied Physics Letters	2000	46
35	Offloading SLAM for Indoor Mobile Robots with Edge-Fog-Cloud Computing		2019	46
36	Room-temperature pulsed operation of 1.5-μm vertical cavity lasers with an InP-based Bragg reflector	IEEE Photonics Technology Letters	1996	45
37	1.26 [micro sign]m vertical cavity laser with two InP/air-gap reflectors	Electronics Letters	1996	45
38	Carrier-diffusion measurements in silicon with a Fourier-transient-grating method	Physical Review B	1994	43
39	Temperature sensitivity of 1.54-μm vertical-cavity lasers with an InP-based Bragg reflector	IEEE Journal of Quantum Electronics	1997	43
40	Schottky diode formation and characterization of titanium tungsten to n- and p-type 4H silicon carbide	Journal of Applied Physics	2000	43
41	Lowering power consumption in clock by using globally asynchronous locally synchronous design style		0	42
42	Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide	Journal of Electronic Materials	2001	42
43	A Survey on LoRa for IoT: Integrating Edge Computing		2019	42
44	Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission	Applied Physics Letters	1997	41
45	Time-resolved photoluminescence characterization of nm-sized silicon crystallites in SiO2	Thin Solid Films	1997	41
46	Edge AI in Smart Farming IoT: CNNs at the Edge and Fog Computing with LoRa		2019	41
47	Application of optical emission microscopy for reliability studies in 4H–SiC p+/n−/n+ diodes	Journal of Applied Physics	2001	40
48	Temperature dependence of the photoelectric conversion quantum efficiency of 4H–SiC Schottky UV photodetectors	Semiconductor Science and Technology	2005	40
49	A single-photon counter for long-haul telecom	IEEE Circuits and Devices: the Magazine of Electronic and Photonic Systems	1999	35
50	Experimental Demonstration of Magneto-hydrodynamic Waves	Nature	1949	34

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