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exaly
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Department of Semiconductor Engineering
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top-articles
Department of Semiconductor Engineering
91
(top 1%)
papers
1.1K
(top 2%)
citations
18
(top 2%)
h
-index
31
(top 2%)
g
-index
97
all documents
1.1K
doc citations
262
citing journals
Top Articles
#
Title
Journal
Year
Citations
1
Investigation of structural and photoluminescence properties of gas and metal ions doped zinc oxide single crystals
Journal of Alloys and Compounds
2014
211
2
Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors
Scientific Reports
2013
69
3
Ferroelectric DRAM (FEDRAM) FET with metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si gate structure
IEEE Electron Device Letters
2002
52
4
Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition
IEEE Transactions on Electron Devices
2014
52
5
Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors
Nature Communications
2017
47
6
Comprehensive Review on Amorphous Oxide Semiconductor Thin Film Transistor
Transactions on Electrical and Electronic Materials
2020
43
7
Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration
Scientific Reports
2016
40
8
Role of Si as carrier suppressor in amorphous Zn–Sn–O
Current Applied Physics
2012
36
9
High performance of full swing logic inverter using all n-types amorphous ZnSnO and SiZnSnO thin film transistors
Applied Physics Letters
2015
36
10
Fabrication and Properties of AlN Film on GaN Substrate by Using Remote Plasma Atomic Layer Deposition Method
Electronic Materials Letters
2009
33
11
First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability
Thin Solid Films
2013
29
12
Effect of Si on the Energy Band Gap Modulation and Performance of Silicon Indium Zinc Oxide Thin-Film Transistors
Scientific Reports
2017
29
13
Role of metal capping layer on highly enhanced electrical performance of In-free Si–Zn–Sn–O thin film transistor
Thin Solid Films
2015
28
14
Substitution mechanism of Ga for Zn site depending on deposition temperature for transparent conducting oxides
Current Applied Physics
2012
25
15
Metal-ferroelectric-semiconductor (MFS) FET's using LiNbO/sub 3//Si
IEEE Electron Device Letters
1998
23
16
Direct investigation on energy bandgap of Si added ZnSnO system for stability enhancement by X-ray photoelectron spectroscopy
Journal of Alloys and Compounds
2017
22
17
A Resistance Deviation-to-Pulsewidth Converter for Resistive Sensors
IEEE Transactions on Instrumentation and Measurement
2009
21
18
Influence of a highly doped buried layer for HfInZnO thin-film transistors
Semiconductor Science and Technology
2012
19
19
Effect of Ag/Al co-doping method on optically p-type ZnO nanowires synthesized by hot-walled pulsed laser deposition
Nanoscale Research Letters
2012
15
20
Influence of Channel Layer Thickness on the Instability of Amorphous SiZnSnO Thin Film Transistors Under Negative Bias Temperature Stress
Physica Status Solidi (A) Applications and Materials Science
2018
15
21
Investigation on energy bandgap states of amorphous SiZnSnO thin films
Scientific Reports
2019
15
22
A temperature difference-to-frequency converter using resistance temperature detectors
IEEE Transactions on Instrumentation and Measurement
1990
14
23
Full swing depletion-load inverter with amorphous SiZnSnO thin film transistors
Physica Status Solidi (A) Applications and Materials Science
2017
14
24
Synthesis and characterization of ZnO thin films deposited via PE-MOCVD
Current Applied Physics
2011
13
25
The reason of degradation in electrical properties of ZnO:Al thin films annealed with various post-annealing temperature
Current Applied Physics
2013
11
26
Transparent heater with meshed amorphous oxide/metal/amorphous oxide for electric vehicle applications
Scientific Reports
2020
10
27
A linear operational transconductance amplifier for instrumentation applications
IEEE Transactions on Instrumentation and Measurement
1992
9
28
Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors
IEEE Electron Device Letters
2013
9
29
Characteristics of SiOF Films Formed by Remote Plasma Enhanced Chemical Vapor Deposition with $\bf SF_{6}$ Gas
Japanese Journal of Applied Physics
1996
8
30
A simple resistance-to-time converter for resistive bridge sensors
IEICE Electronics Express
2008
8
31
Effect of channel thickness on the electrical performance and the stability of amorphous SiZnSnO thin film transistor
Materials Science in Semiconductor Processing
2020
8
32
A Study on Properties of RF-sputtered Al-doped ZnO Thin Films Prepared with Different Ar Gas Flow Rates
Applied Science and Convergence Technology
2016
8
33
An LED color control system with independently changeable illuminance
2009
7
34
Experimental Identification Method for Small-Signal Analysis of Smart Power ICs
IEEE Transactions on Industrial Electronics
2010
7
35
Threshold voltage shift by controlling Ga in solution processed Si–In–Zn–O thin film transistors
Thin Solid Films
2012
7
36
Investigation of addition of silicon on the electrical properties of low temperature solution processed SiInZnO thin film transistor
Journal of Sol-Gel Science and Technology
2015
7
37
Initial vacuum effects on the properties of sputter deposited Ga-doped ZnO thin films
Journal of Alloys and Compounds
2017
7
38
Effect of Oxygen Pressure on Electrical Property of a-SZTO Thin Film Transistor
Transactions on Electrical and Electronic Materials
2018
7
39
A bridge resistance deviation-to-time interval converter for resistive sensor bridges
IEICE Electronics Express
2007
6
40
A current-mode non-inverting CMOS buck-boost DC-DC converter
2009
6
41
Comparative analysis of temperature thermally induced instability between Si–In–Zn–O and Ga–In–Zn–O thin film transistors
Thin Solid Films
2012
6
42
Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors
IEEE Transactions on Electron Devices
2017
6
43
Metal Capping on Silicon Indium Zinc Oxide Semiconductor for High Performance Thin Film Transistors Processed at 150 °C
Journal of Nanoscience and Nanotechnology
2017
6
44
Dependency of Si Content on the Performance of Amorphous SiZnSnO Thin Film Transistor Based Logic Circuits for Next-Generation Integrated Circuits
Transactions on Electrical and Electronic Materials
2019
6
45
Interfacial structure of ferromagnetic Fe-Pt thin films grown on a Si substrate
Current Applied Physics
2011
5
46
Variation of subthreshold swing of solution-processed Zr-Si-In-Zn-O thin film transistor at low annealing temperature
Electronic Materials Letters
2013
5
47
Investigation on the variation of channel resistance and contact resistance of SiZnSnO semiconductor depending on Si contents using transmission line method
Solid-State Electronics
2018
5
48
Effect of Double Junctions in Nano Structure Oxide Materials and Gas Sensitivity
Transactions on Electrical and Electronic Materials
2018
5
49
Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors
Physica B: Condensed Matter
2019
5
50
Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors
Solid-State Electronics
2019
5
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