12.1K
Articles
475.6K
Citations
5.8
avg. Impact Factor
268
h-index

Most Cited Articles of Shenyang National Laboratory for Materials Science in 2001

TitleJournalYearCitations
Adsorption and capillarity of nitrogen in aggregated multi-walled carbon nanotubesChemical Physics Letters2001185
Purification of single-walled carbon nanotubes synthesized by the hydrogen arc-discharge methodJournal of Materials Research2001120
Superheating of Ag nanoparticles embedded in Ni matrixActa Materialia200177
New Binary Room-Temperature Molten Salt Electrolyte Based on Urea and LiTFSIJournal of Physical Chemistry B200166
Synthesis and proton conductivities of phosphonic acid containing poly-(arylene ether)sJournal of Polymer Science Part A200160
High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nmApplied Physics Letters200160
Thermal redistribution of photocarriers between bimodal quantum dotsJournal of Applied Physics200160
Creep behavior of cold-rolled nanocrystalline pure copperScripta Materialia200136
Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxyJournal of Vacuum Science & Technology an Official Journal of the American Vacuum Society B, Microelectronics Processing and Phenomena200131
SEM-ECC Investigation of Dislocation Arrangements in Cyclically Deformed Copper Single Crystals with Different Crystallographic OrientationsDefect and Diffusion Forum200125
Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrateJournal of Crystal Growth200123
Electrical transport properties of microcrystalline silicon thin films prepared by Cat-CVDThin Solid Films200120
MnSi∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy techniqueJournal of Crystal Growth200116
Influence of pressure on crystallization kinetics in an Al–Ni–Ce–Fe amorphous alloyJournal of Non-Crystalline Solids200116
Random telegraph noise in the photoluminescence of individual GaxIn1−xAs quantum dots in GaAsPhysical Review B200112
Pressure-enhanced thermal stability against eutectic crystallization in Al-based metallic glassesScripta Materialia200111
Growth and characterization of InGaAs/InAlAs quantum cascade lasersSolid-State Electronics20017
Facile synthesis and properties of semicrystalline copoly(arylene ether ketone) containing hydroquinone and phthalazinoneJournal of Applied Polymer Science20017
Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPEJournal of Crystal Growth20017
Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxyJournal of Crystal Growth20017
Melting, superheating and freezing behaviour of indium interpreted using a nucleation-and-growth modelJournal of Physics Condensed Matter20017
Shear-activated indentation crack in GaAs single crystalJournal of Materials Research20017
Changing the size and shape of Ge island by chemical etchingJournal of Crystal Growth20016
Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dotsJournal of Applied Physics20016
YBa2Cu3O7−y and YbBa2Cu3O7−y superconducting films prepared by chemical solution deposition on SrTiO3 (001) substrateChemical Physics Letters20014