Institute of Solid State Physics

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#	Title	Journal	Year	Citations
1	The emergence and prospects of deep-ultraviolet light-emitting diode technologies	Nature Photonics	2019	800
2	Advances in group III-nitride-based deep UV light-emitting diode technology	Semiconductor Science and Technology	2011	593
3	Properties of the yellow luminescence in undoped GaN epitaxial layers	Physical Review B	1995	220
4	AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire	Applied Physics Letters	2018	171
5	Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers	Physical Review B	2011	157
6	Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes	Applied Physics Letters	2010	145
7	Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells	Semiconductor Science and Technology	2012	129
8	1550-nm High-Speed Short-Cavity VCSELs	IEEE Journal of Selected Topics in Quantum Electronics	2011	124
9	Ionized and neutral donor-bound excitons in ZnO	Physical Review B	2007	111
10	The growth and optical properties of large, high-quality AlN single crystals	Journal of Applied Physics	2004	92
11	Effect of annealing on the In and N distribution in InGaAsN quantum wells	Applied Physics Letters	2002	86
12	Effect of the AIN nucleation layer growth on AlN material quality	Journal of Crystal Growth	2008	76
13	MoSe2/WSe2 heterostructures from first principles">Interlayer excitons in MoSe2/WSe2 heterostructures from first principles	Physical Review B	2018	75
14	MOVPE growth of high-quality AlN	Journal of Crystal Growth	2006	68
15	Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals	Journal of Applied Physics	2010	68
16	Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays	IEEE Transactions on Electron Devices	2013	68
17	p-State Luminescence in CdSe Nanoplatelets: Role of Lateral Confinement and a Longitudinal Optical Phonon Bottleneck">p-State Luminescence in CdSe Nanoplatelets: Role of Lateral Confinement and a Longitudinal Optical Phonon Bottleneck	Physical Review Letters	2016	68
18	Single Quantum Dot with Microlens and 3D-Printed Micro-objective as Integrated Bright Single-Photon Source	ACS Photonics	2017	63
19	Selective Polycarboxylation of Semiconducting Single-Walled Carbon Nanotubes by Reductive Sidewall Functionalization	Journal of the American Chemical Society	2011	62
20	Vibrational dynamics in lead halide hybrid perovskites investigated by Raman spectroscopy	Physical Chemistry Chemical Physics	2020	61
21	Anisotropy of the dielectric function for wurtzite InN	Superlattices and Microstructures	2004	60
22	Indistinguishable Photons from Deterministically Integrated Single Quantum Dots in Heterogeneous GaAs/Si₃N₄ Quantum Photonic Circuits	Nano Letters	2019	53
23	A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities	Nature Communications	2018	50
24	Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates	Applied Physics Letters	2020	50
25	Energy transfer in close-packed PbS nanocrystal films	Physical Review B	2008	49
26	Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire	Photonics Research	2020	49
27	Semipolar GaN grown on m‐plane sapphire using MOVPE	Physica Status Solidi C: Current Topics in Solid State Physics	2008	48
28	Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy	Journal of Applied Physics	2012	48
29	Influence of substrate surface polarity on homoepitaxial growth of ZnO layers by chemical vapor deposition	Physical Review B	2009	47
30	Optical signatures of nitrogen acceptors in ZnO	Physical Review B	2012	47
31	β−Ga2O3(100) single crystals">Near valence-band electronic properties of semiconductingβ−Ga2O3(100) single crystals	Physical Review B	2015	47
32	Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes	Applied Physics Letters	2016	47
33	Controlling the morphology transition between step-flow growth and step-bunching growth	Journal of Crystal Growth	2017	47
34	Band-Gap Engineering of Zinc Oxide Colloids via Lattice Substitution with Sulfur Leading to Materials with Advanced Properties for Optical Applications Like Full Inorganic UV Protection	Chemistry of Materials	2012	46
35	Surface properties of annealed semiconducting β-Ga2O3 (1 0 0) single crystals for epitaxy	Applied Surface Science	2015	46
36	Optical transitions of different Mn-ion pairs in ZnS	Physical Review B	1989	45
37	Excited state properties of donor bound excitons in ZnO	Physical Review B	2010	45
38	Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN	Journal of Applied Physics	2011	45
39	Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm	Japanese Journal of Applied Physics	2019	44
40	Micro-Raman Study of Orientation Effects of CuxSe-Crystallites on Cu-rich CuGaSe2 Thin Films	Journal of Applied Physics	2004	42
41	Asymmetry in the excitonic recombinations and impurity incorporation of the two polar faces of homoepitaxially grown ZnO films	Physical Review B	2008	42
42	Orientation control of GaN and grown on sapphire by metal-organic vapor phase epitaxy	Journal of Crystal Growth	2010	42
43	Crystal orientation of GaN layers on (101 0) m -plane sapphire	Physica Status Solidi (B): Basic Research	2011	42
44	MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs	Photonics Research	2019	42
45	Identification of bound exciton complexes in ZnO	Physica Status Solidi (B): Basic Research	2004	41
46	Ellipsometry from infrared to vacuum ultraviolet: Structural properties of thin anisotropic guanine films on silicon	Physica Status Solidi (B): Basic Research	2005	41
47	Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Structures	Physica Status Solidi (B): Basic Research	2001	40
48	Impact of Photon Lifetime on the Temperature Stability of 50 Gb/s 980 nm VCSELs	IEEE Photonics Technology Letters	2016	40
49	The Input Power Dynamic Range of a Semiconductor Optical Amplifier and Its Relevance for Access Network Applications	IEEE Photonics Journal	2011	37
50	Γ7valence band symmetry related hole fine splitting of bound excitons in ZnO observed in magneto-optical studies">Γ7valence band symmetry related hole fine splitting of bound excitons in ZnO observed in magneto-optical studies	Physical Review B	2009	36

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