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exaly
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top-articles
Department of Electronics
816
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16.3K
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57
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108
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900
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16.9K
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1.1K
citing journals
Top Articles
#
Title
Journal
Year
Citations
1
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
Japanese Journal of Applied Physics
1989
1,754
2
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
Journal of Crystal Growth
1989
689
3
The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
Journal of Crystal Growth
1993
323
4
Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
Journal of Crystal Growth
1994
312
5
Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
Journal of Crystal Growth
1991
286
6
Schottky barrier onn‐type GaN grown by hydride vapor phase epitaxy
Applied Physics Letters
1993
276
7
Analysis of deep levels inn‐type GaN by transient capacitance methods
Journal of Applied Physics
1994
276
8
Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
Thin Solid Films
1988
263
9
Relaxation Process of the Thermal Strain in the GaN/α-Al2O3Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
Japanese Journal of Applied Physics
1992
259
10
Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
Journal of Luminescence
1991
253
11
Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
Applied Physics Letters
1992
222
12
Properties of the yellow luminescence in undoped GaN epitaxial layers
Physical Review B
1995
220
13
Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE
Journal of the Electrochemical Society
1990
209
14
Energy band‐gap bowing parameter in an AlxGa1−xN alloy
Journal of Applied Physics
1987
194
15
Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
Journal of Crystal Growth
1991
188
16
Growth of single crystal GaN substrate using hydride vapor phase epitaxy
Journal of Crystal Growth
1990
176
17
Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy
Japanese Journal of Applied Physics
1995
171
18
Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on ($11 \bar{2}0$) and (0001) Sapphire Substrates
Japanese Journal of Applied Physics
1988
154
19
Exciton fine structure in undoped GaN epitaxial films
Physical Review B
1996
150
20
Spatial Distribution of SiH3Radicals in RF Silane Plasma
Japanese Journal of Applied Physics
1990
145
21
Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy
Applied Physics Letters
1999
137
22
Accurate oscillator strengths for neutral helium
Physical Review A
1984
136
23
Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE
Journal of Crystal Growth
1991
125
24
Deep levels in the upper band‐gap region of lightly Mg‐doped GaN
Applied Physics Letters
1996
125
25
Magneto-Optical Kerr Effects of Yttrium-Iron Garnet Thin Films Incorporating Gold Nanoparticles
Physical Review Letters
2006
117
26
Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy
Applied Physics Letters
2002
115
27
Effect of AlN Buffer Layer on AlGaN/α-Al2O3Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy
Japanese Journal of Applied Physics
1988
105
28
Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition
Journal of Applied Physics
1985
98
29
Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers
Applied Physics Letters
1994
96
30
Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures
Japanese Journal of Applied Physics
1991
94
31
Preparation of AlxGa1-xN/GaN heterostructure by MOVPE
Journal of Crystal Growth
1990
93
32
Perpendicular magnetic anisotropy and magneto-optical Kerr spectra of MBE-grown PtCo alloy films
IEEE Transactions on Magnetics
1997
91
33
MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers
Electronics Letters
1984
87
34
Defect structure in selective area growth GaN pyramid on (111)Si substrate
Applied Physics Letters
2000
87
35
Growth of () GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE
Journal of Crystal Growth
2002
86
36
Exchange Coupling between Antiferromagnetic Mn–Ir and Ferromagnetic Ni–Fe Layers
Japanese Journal of Applied Physics
1996
85
37
The growth of thick GaN film on sapphire substrate by using ZnO buffer layer
Journal of Crystal Growth
1993
84
38
Perspective: Terahertz wave parametric generator and its applications
Journal of Applied Physics
2018
80
39
Diffusion Coefficient and Reaction Rate Constant of the SiH3Radical in Silane Plasma
Japanese Journal of Applied Physics
1989
78
40
Measurement of the SiH3Radical Density in Silane Plasma using Infrared Diode Laser Absorption Spectroscopy
Japanese Journal of Applied Physics
1988
76
41
Patterned arrays of assembled nanoparticles prepared by interfacial assembly and femtosecond laser fabrication
Journal of Nanoparticle Research
2020
76
42
Epitaxial growth and material properties of GaAs on Si grown by MOCVD
Journal of Crystal Growth
1986
75
43
Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy
Journal of Crystal Growth
1991
75
44
Element-specific imaging of magnetic domains at 25 nm spatial resolution using soft x-ray microscopy
Review of Scientific Instruments
2001
74
45
Edge emission of AlxGa1−xN
Solid State Communications
1986
73
46
Energy levels forS,P, andDstates in He through precision variational calculations
Physical Review A
1986
70
47
Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH3)3 and NH3
Journal of Crystal Growth
1984
69
48
Detection of the silylene ν2 band by infrared diode laser kinetic spectroscopy
Journal of Chemical Physics
1989
68
49
High precision phase-shifting electron holography
Journal of Electron Microscopy
2000
68
50
Photoluminescence of residual transition metal impurities in GaN
Applied Physics Letters
1995
67
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