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#TitleJournalYearCitations
1P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics19891,754
2Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth1989689
3The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layerJournal of Crystal Growth1993323
4Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxyJournal of Crystal Growth1994312
5Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPEJournal of Crystal Growth1991286
6Schottky barrier onn‐type GaN grown by hydride vapor phase epitaxyApplied Physics Letters1993276
7Analysis of deep levels inn‐type GaN by transient capacitance methodsJournal of Applied Physics1994276
8Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrateThin Solid Films1988263
9Relaxation Process of the Thermal Strain in the GaN/α-Al2O3Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the StrainJapanese Journal of Applied Physics1992259
10Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LEDJournal of Luminescence1991253
11Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layerApplied Physics Letters1992222
12Properties of the yellow luminescence in undoped GaN epitaxial layersPhysical Review B1995220
13Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPEJournal of the Electrochemical Society1990209
14Energy band‐gap bowing parameter in an AlxGa1−xN alloyJournal of Applied Physics1987194
15Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layerJournal of Crystal Growth1991188
16Growth of single crystal GaN substrate using hydride vapor phase epitaxyJournal of Crystal Growth1990176
17Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics1995171
18Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on ($11 \bar{2}0$) and (0001) Sapphire SubstratesJapanese Journal of Applied Physics1988154
19Exciton fine structure in undoped GaN epitaxial filmsPhysical Review B1996150
20Spatial Distribution of SiH3Radicals in RF Silane PlasmaJapanese Journal of Applied Physics1990145
21Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopyApplied Physics Letters1999137
22Accurate oscillator strengths for neutral heliumPhysical Review A1984136
23Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPEJournal of Crystal Growth1991125
24Deep levels in the upper band‐gap region of lightly Mg‐doped GaNApplied Physics Letters1996125
25Magneto-Optical Kerr Effects of Yttrium-Iron Garnet Thin Films Incorporating Gold NanoparticlesPhysical Review Letters2006117
26Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxyApplied Physics Letters2002115
27Effect of AlN Buffer Layer on AlGaN/α-Al2O3Heteroepitaxial Growth by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics1988105
28Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor depositionJournal of Applied Physics198598
29Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layersApplied Physics Letters199496
30Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered StructuresJapanese Journal of Applied Physics199194
31Preparation of AlxGa1-xN/GaN heterostructure by MOVPEJournal of Crystal Growth199093
32Perpendicular magnetic anisotropy and magneto-optical Kerr spectra of MBE-grown PtCo alloy filmsIEEE Transactions on Magnetics199791
33MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layersElectronics Letters198487
34Defect structure in selective area growth GaN pyramid on (111)Si substrateApplied Physics Letters200087
35Growth of () GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPEJournal of Crystal Growth200286
36Exchange Coupling between Antiferromagnetic Mn–Ir and Ferromagnetic Ni–Fe LayersJapanese Journal of Applied Physics199685
37The growth of thick GaN film on sapphire substrate by using ZnO buffer layerJournal of Crystal Growth199384
38Perspective: Terahertz wave parametric generator and its applicationsJournal of Applied Physics201880
39Diffusion Coefficient and Reaction Rate Constant of the SiH3Radical in Silane PlasmaJapanese Journal of Applied Physics198978
40Measurement of the SiH3Radical Density in Silane Plasma using Infrared Diode Laser Absorption SpectroscopyJapanese Journal of Applied Physics198876
41Patterned arrays of assembled nanoparticles prepared by interfacial assembly and femtosecond laser fabricationJournal of Nanoparticle Research202076
42Epitaxial growth and material properties of GaAs on Si grown by MOCVDJournal of Crystal Growth198675
43Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxyJournal of Crystal Growth199175
44Element-specific imaging of magnetic domains at 25 nm spatial resolution using soft x-ray microscopyReview of Scientific Instruments200174
45Edge emission of AlxGa1−xNSolid State Communications198673
46Energy levels forS,P, andDstates in He through precision variational calculationsPhysical Review A198670
47Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH3)3 and NH3Journal of Crystal Growth198469
48Detection of the silylene ν2 band by infrared diode laser kinetic spectroscopyJournal of Chemical Physics198968
49High precision phase-shifting electron holographyJournal of Electron Microscopy200068
50Photoluminescence of residual transition metal impurities in GaNApplied Physics Letters199567