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#TitleJournalYearCitations
1Kinetics of Initial Layer-by-Layer Oxidation of Si(001) SurfacesPhysical Review Letters1998287
2Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high‐energy electron diffraction during molecular beam epitaxyApplied Physics Letters1986102
3RHEED from stepped surfaces and its relation to RHEED intensity oscillations observed during MBESurface Science198591
4Epitaxy of Zn1 − Mg Se Te1 − on (100)InAsJournal of Crystal Growth199688
5Pair annihilation of pointlike topological defects in the ordering process of quenched systemsPhysical Review A199059
6Monte Carlo simulation of thin film growth on Si surfacesProgress in Surface Science199341
7Extinction effect and Borrmann effect of resonant dynamical scattering in the Bragg caseActa Crystallographica Section A: Foundations and Advances200237
8Observation of oxide/Si(001)-interface during layer-by-layer oxidation by scanning reflection electron microscopyApplied Physics Letters199736
9Determination of the c(2 × 2) structure formed on Cu(001) upon Li adsorption: a low-energy electron diffraction analysisSurface Science199335
10Missing-row-type restructuring of the Cu(001) surface induced by Li adsorption: a low-energy electron diffraction analysisSurface Science Letters199333
11X-ray standing wave as a result of only the imaginary part of the atomic scattering factorActa Crystallographica Section A: Foundations and Advances199933
12Origin of azimuthal effect of RHEED intensity oscillations observed during MBESurface Science198632
13Monte Carlo simulation of homoepitaxial growth on two-component compound semiconductor surfacesSurface Science199932
14Vortex Dynamics in the Ordering Process of the Three-Dimensional Planar SystemJournal of the Physical Society of Japan199131
15Relation between surface step density and RHEED intensitySurface Science199328
16Cell Dynamical Approach to the Ordering Process of the Three-Dimensional Heisenberg SystemJournal of the Physical Society of Japan199127
17Pion-nucleus scattering at 800 MeV/cPhysical Review C199122
18Kinetics of homoepitaxial growth on GaAs(100) studied by two-component Monte Carlo simulationApplied Surface Science199821
19Calculation of rheed from stepped Si(001) for interpretation of rheed oscillations during MBESurface Science198720
20First-Principle Calculation of Migration Processes of As during Growth on GaAs(001)Japanese Journal of Applied Physics200019
21Meson-meson interaction with a flip-flop model for quark confinementNuclear Physics A198718
22Transient growth in molecular beam epitaxy of Si on Si(100) vicinal surfacesSurface Science199317
23Missing-row-type restructuring of the Cu(001) surface induced by Li adsorption: a low-energy electron diffraction analysisSurface Science199316
24Multiple scattering calculation of RHEED from growth Si(001) surfacesSurface Science199615
25Monte Carlo simulation of equilibrium thermal roughening of the Ge(001)2 × 1 surfaceSurface Science199114
26Role of As during homoepitaxial growth on GaAs(001) studied using Monte Carlo simulationSurface Science199914
27Monte Carlo simulation of single domain Si(100) surfacesSurface Science199113
28Cell dynamics simulation for the phase ordering of nematic liquid crystalsPhysical Review E199313
29Motion of Defects in the Phase Ordering Process of Nematic Liquid CrystalsJournal of the Physical Society of Japan199412
30Comparison of RHEED Dynamical Calculation MethodsJapanese Journal of Applied Physics198811
31PHASE ORDERING SIMULATION OF VECTOR ORDER-PARAMETERS WITHOUT SINGULAR DEFECTSModern Physics Letters B199311
32EXAFS spectra for amorphous and crystalline Mg-ZnPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties19849
33Observation of an Interface Exciton and Exciton Localization in BiI3-CdI2Multilayer StructuresJournal of the Physical Society of Japan19948
34Extended solid-on-solid model for heteroepitaxial growthSurface Science19998
35Surface Morphology Development during Molecular Beam Epitaxy Growth on a GaAs(100) Vicinal SurfaceJapanese Journal of Applied Physics20008
36Inelastic scattering of cosmic ray muons on iron nuclei and the virtual photon shadowingFortschritte Der Physik19847
37Monte Carlo simulation of recovery process after MBE growth on GaAs( 100 )Surface Science20017
38The Origin of Circular Arc in RHEED: 1D Ordered SurfaceJournal of the Physical Society of Japan19856
39Nucleon resonances and pion-nucleon interaction in nuclear matter above the Δ resonance energyPhysical Review C19956
40Monte Carlo simulation of decay process of pyramidal islands formed on Si( 100 ) surfaceSurface Science20016
41K−-4He interaction at low energiesNuclear Physics A19885
42Determination of Anomalous Scattering Factor by Using Transmitted Rocking Curves near the Absorption EdgeJapanese Journal of Applied Physics19975
43Surface-Morphological Information in RHEEDSurface Review and Letters19985
44RHEED analysis of twinned homoepitaxial layers grown on Si(111)√3×√3-BThin Solid Films20005
45Nature of Angle-Resolved Electron Energy Loss SpectrumJournal of the Physical Society of Japan19835
46Emission of 8Li, 9Li and 8B Fragments from Stars Produced by 4.3 Gev π--Mesons in Nuclear EmulsionJournal of the Physical Society of Japan19604
47EXAFS and XANES study under pressureGeophysical Monograph Series19874
48Absorptive contents of pionic-atom optical potentials and the anomaly problemPhysics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics19914
49Transient growth in molecular beam epitaxy of Si on Si(100) vicinal surfacesSurface Science Letters19934
50Absorption-spectral-shape analysis of the band-edge exciton in aBiI3crystal based on the exciton-phonon interactionPhysical Review B19913