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exaly
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Department of Physics
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top-articles
Department of Physics
83
(top 1%)
papers
1.3K
(top 2%)
citations
19
(top 2%)
h
-index
36
(top 1%)
g
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83
all documents
1.4K
doc citations
205
citing journals
Top Articles
#
Title
Journal
Year
Citations
1
Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces
Physical Review Letters
1998
287
2
Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high‐energy electron diffraction during molecular beam epitaxy
Applied Physics Letters
1986
102
3
RHEED from stepped surfaces and its relation to RHEED intensity oscillations observed during MBE
Surface Science
1985
91
4
Epitaxy of Zn1 − Mg Se Te1 − on (100)InAs
Journal of Crystal Growth
1996
88
5
Pair annihilation of pointlike topological defects in the ordering process of quenched systems
Physical Review A
1990
59
6
Monte Carlo simulation of thin film growth on Si surfaces
Progress in Surface Science
1993
41
7
Extinction effect and Borrmann effect of resonant dynamical scattering in the Bragg case
Acta Crystallographica Section A: Foundations and Advances
2002
37
8
Observation of oxide/Si(001)-interface during layer-by-layer oxidation by scanning reflection electron microscopy
Applied Physics Letters
1997
36
9
Determination of the c(2 × 2) structure formed on Cu(001) upon Li adsorption: a low-energy electron diffraction analysis
Surface Science
1993
35
10
Missing-row-type restructuring of the Cu(001) surface induced by Li adsorption: a low-energy electron diffraction analysis
Surface Science Letters
1993
33
11
X-ray standing wave as a result of only the imaginary part of the atomic scattering factor
Acta Crystallographica Section A: Foundations and Advances
1999
33
12
Origin of azimuthal effect of RHEED intensity oscillations observed during MBE
Surface Science
1986
32
13
Monte Carlo simulation of homoepitaxial growth on two-component compound semiconductor surfaces
Surface Science
1999
32
14
Vortex Dynamics in the Ordering Process of the Three-Dimensional Planar System
Journal of the Physical Society of Japan
1991
31
15
Relation between surface step density and RHEED intensity
Surface Science
1993
28
16
Cell Dynamical Approach to the Ordering Process of the Three-Dimensional Heisenberg System
Journal of the Physical Society of Japan
1991
27
17
Pion-nucleus scattering at 800 MeV/c
Physical Review C
1991
22
18
Kinetics of homoepitaxial growth on GaAs(100) studied by two-component Monte Carlo simulation
Applied Surface Science
1998
21
19
Calculation of rheed from stepped Si(001) for interpretation of rheed oscillations during MBE
Surface Science
1987
20
20
First-Principle Calculation of Migration Processes of As during Growth on GaAs(001)
Japanese Journal of Applied Physics
2000
19
21
Meson-meson interaction with a flip-flop model for quark confinement
Nuclear Physics A
1987
18
22
Transient growth in molecular beam epitaxy of Si on Si(100) vicinal surfaces
Surface Science
1993
17
23
Missing-row-type restructuring of the Cu(001) surface induced by Li adsorption: a low-energy electron diffraction analysis
Surface Science
1993
16
24
Multiple scattering calculation of RHEED from growth Si(001) surfaces
Surface Science
1996
15
25
Monte Carlo simulation of equilibrium thermal roughening of the Ge(001)2 × 1 surface
Surface Science
1991
14
26
Role of As during homoepitaxial growth on GaAs(001) studied using Monte Carlo simulation
Surface Science
1999
14
27
Monte Carlo simulation of single domain Si(100) surfaces
Surface Science
1991
13
28
Cell dynamics simulation for the phase ordering of nematic liquid crystals
Physical Review E
1993
13
29
Motion of Defects in the Phase Ordering Process of Nematic Liquid Crystals
Journal of the Physical Society of Japan
1994
12
30
Comparison of RHEED Dynamical Calculation Methods
Japanese Journal of Applied Physics
1988
11
31
PHASE ORDERING SIMULATION OF VECTOR ORDER-PARAMETERS WITHOUT SINGULAR DEFECTS
Modern Physics Letters B
1993
11
32
EXAFS spectra for amorphous and crystalline Mg-Zn
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
1984
9
33
Observation of an Interface Exciton and Exciton Localization in BiI3-CdI2Multilayer Structures
Journal of the Physical Society of Japan
1994
8
34
Extended solid-on-solid model for heteroepitaxial growth
Surface Science
1999
8
35
Surface Morphology Development during Molecular Beam Epitaxy Growth on a GaAs(100) Vicinal Surface
Japanese Journal of Applied Physics
2000
8
36
Inelastic scattering of cosmic ray muons on iron nuclei and the virtual photon shadowing
Fortschritte Der Physik
1984
7
37
Monte Carlo simulation of recovery process after MBE growth on GaAs( 100 )
Surface Science
2001
7
38
The Origin of Circular Arc in RHEED: 1D Ordered Surface
Journal of the Physical Society of Japan
1985
6
39
Nucleon resonances and pion-nucleon interaction in nuclear matter above the Δ resonance energy
Physical Review C
1995
6
40
Monte Carlo simulation of decay process of pyramidal islands formed on Si( 100 ) surface
Surface Science
2001
6
41
K−-4He interaction at low energies
Nuclear Physics A
1988
5
42
Determination of Anomalous Scattering Factor by Using Transmitted Rocking Curves near the Absorption Edge
Japanese Journal of Applied Physics
1997
5
43
Surface-Morphological Information in RHEED
Surface Review and Letters
1998
5
44
RHEED analysis of twinned homoepitaxial layers grown on Si(111)√3×√3-B
Thin Solid Films
2000
5
45
Nature of Angle-Resolved Electron Energy Loss Spectrum
Journal of the Physical Society of Japan
1983
5
46
Emission of 8Li, 9Li and 8B Fragments from Stars Produced by 4.3 Gev π--Mesons in Nuclear Emulsion
Journal of the Physical Society of Japan
1960
4
47
EXAFS and XANES study under pressure
Geophysical Monograph Series
1987
4
48
Absorptive contents of pionic-atom optical potentials and the anomaly problem
Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics
1991
4
49
Transient growth in molecular beam epitaxy of Si on Si(100) vicinal surfaces
Surface Science Letters
1993
4
50
Absorption-spectral-shape analysis of the band-edge exciton in aBiI3crystal based on the exciton-phonon interaction
Physical Review B
1991
3
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