5.8(top 1%)
impact factor
55(top 100%)
papers
9.9K(top 20%)
citations
40(top 20%)
h-index
5.9(top 1%)
impact factor
67
all documents
10.1K
doc citations
55(top 20%)
g-index

Top Articles

#TitleJournalYearCitations
1The embedded-atom method: a review of theory and applicationsMaterials Science and Engineering Reports19931,343
2Self-propagating exothermic reactions: The synthesis of high-temperature materials by combustionMaterials Science and Engineering Reports1989989
3X-ray and neutron reflectivity for the investigation of polymersMaterials Science and Engineering Reports1990862
4Kinetics of solid phase crystallization in amorphous siliconMaterials Science and Engineering Reports1988642
5Atomic layer epitaxyMaterials Science and Engineering Reports1989549
6Dislocations in strained-layer epitaxy: theory, experiment, and applicationsMaterials Science and Engineering Reports1991519
7Chemical and electronic structure of the SiO2/Si interfaceMaterials Science and Engineering Reports1986427
8Ion implantation for isolation of III-V semiconductorsMaterials Science and Engineering Reports1990306
9Thermodynamic and fractal geometric aspects of ion-solid interactionsMaterials Science and Engineering Reports1990273
10Ion implantation and annealing of crystalline oxidesMaterials Science and Engineering Reports1989257
11Ion beam synthesis of epitaxial silicides: fabrication, characterization and applicationsMaterials Science and Engineering Reports1992249
12New permanent magnet materialsMaterials Science and Engineering Reports1986235
13Growth and characterization of epitaxial Ni and Co silicidesMaterials Science and Engineering Reports1992235
14Pressure—induced amorphous phasesMaterials Science and Engineering Reports1992230
15Ion-beam-induced epitaxial crystallization and amorphization in siliconMaterials Science and Engineering Reports1990191
16Stable and epitaxial metal/III-V semiconductor heterostructuresMaterials Science and Engineering Reports1990180
17Epitaxial growth and properties of YBaCuO thin filmsMaterials Science and Engineering Reports1989177
18Glow-discharge amorphous silicon: Growth process and structureMaterials Science and Engineering Reports1987168
19Epitaxial growth of transition-metal silicides on siliconMaterials Science and Engineering Reports1991168
20A review of thin-film aluminide formationMaterials Science and Engineering Reports1990162
21Ion beam assisted thin film depositionMaterials Science and Engineering Reports1991158
22Electromigration in thin-film interconnection lines: models, methods and resultsMaterials Science and Engineering Reports1991131
23Pre-amorphization damage in ion-implanted siliconMaterials Science and Engineering Reports1991130
24Ion-implanted structures and doped layers in diamondMaterials Science and Engineering Reports1992126
25Metal-organic vapor phase epitaxy of compound semiconductorsMaterials Science and Engineering Reports1987118
26Copper deposition and thermal stability issues in copper-based metallization for ULSI technologyMaterials Science and Engineering Reports1992110
27Thermodynamics and kinetics of phase transformations induced by ion irradiationMaterials Science and Engineering Reports1991102
28Thin film compound phase formation sequence: An effective heat of formation modelMaterials Science and Engineering Reports199396
29Electrical and optical properties of silicide single crystals and thin filmsMaterials Science and Engineering Reports199394
30Self-propagating exothermic reactions: The synthesis of high-temperature materials by combustionMaterials Science and Engineering Reports198977
31Photoinduced deposition of thin filmsMaterials Science and Engineering Reports198766
32Metal/semiconductor contact resistivity and its determination from contact resistance measurementsMaterials Science and Engineering Reports198862
33Lattice site occupation of non-soluble elements implanted in metalsMaterials Science and Engineering Reports198759
34Crystallographic analysis and observation of surface micro-areas using microprobe reflection high-energy electron diffractionMaterials Science and Engineering Reports198959
35Development of ohmic contact materials for GaAs integrated circuitsMaterials Science and Engineering Reports199054
36Damage formation and annealing of ion implantation in SiMaterials Science and Engineering Reports199154
37Synchrotron X-radiation topographyMaterials Science and Engineering Reports199246
38Non-linear optical materials and applicationsMaterials Science and Engineering Reports199345
39Atomic layer epitaxy of III–V compounds using metalorganic and hydride sourcesMaterials Science and Engineering Reports199244
40Materials for infrared fibre opticsMaterials Science and Engineering Reports198741
41Properties of noble-metal/silicon junctionsMaterials Science and Engineering Reports199241
42Phase formation in metastable solidification of metalsMaterials Science and Engineering Reports198937
43Semiconductor surface passivationMaterials Science and Engineering Reports198834
44Transport and degradation in transition metal oxides in chemical potential gradientsMaterials Science and Engineering Reports199125
45Ion-beam-induced epitaxial crystallization and amorphization in siliconMaterials Science and Engineering Reports199023
46Electronic and optical properties of conducting polymer thin filmsMaterials Science and Engineering Reports199323
47Polymer degradation by crazing and its study by small angle scattering techniquesMaterials Science and Engineering Reports198722
48Chemical mapping and its application to interfaces, point defects and materials processingMaterials Science and Engineering Reports199319
49Interactions between binary metallic alloys and Si, GeSi and GaAsMaterials Science and Engineering Reports199216
50Ion implantation for isolation of III–V semiconductorsMaterials Science and Engineering Reports199013