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exaly
›
Journals
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Materials Science and Engineering Reports
›
top-articles
Materials Science and Engineering Reports
5.8
(top 1%)
impact factor
55
(top 100%)
papers
9.9K
(top 20%)
citations
40
(top 20%)
h
-index
5.9
(top 1%)
impact factor
67
all documents
10.1K
doc citations
55
(top 20%)
g
-index
Top Articles
#
Title
Journal
Year
Citations
1
The embedded-atom method: a review of theory and applications
Materials Science and Engineering Reports
1993
1,343
2
Self-propagating exothermic reactions: The synthesis of high-temperature materials by combustion
Materials Science and Engineering Reports
1989
989
3
X-ray and neutron reflectivity for the investigation of polymers
Materials Science and Engineering Reports
1990
862
4
Kinetics of solid phase crystallization in amorphous silicon
Materials Science and Engineering Reports
1988
642
5
Atomic layer epitaxy
Materials Science and Engineering Reports
1989
549
6
Dislocations in strained-layer epitaxy: theory, experiment, and applications
Materials Science and Engineering Reports
1991
519
7
Chemical and electronic structure of the SiO2/Si interface
Materials Science and Engineering Reports
1986
427
8
Ion implantation for isolation of III-V semiconductors
Materials Science and Engineering Reports
1990
306
9
Thermodynamic and fractal geometric aspects of ion-solid interactions
Materials Science and Engineering Reports
1990
273
10
Ion implantation and annealing of crystalline oxides
Materials Science and Engineering Reports
1989
257
11
Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications
Materials Science and Engineering Reports
1992
249
12
New permanent magnet materials
Materials Science and Engineering Reports
1986
235
13
Growth and characterization of epitaxial Ni and Co silicides
Materials Science and Engineering Reports
1992
235
14
Pressure—induced amorphous phases
Materials Science and Engineering Reports
1992
230
15
Ion-beam-induced epitaxial crystallization and amorphization in silicon
Materials Science and Engineering Reports
1990
191
16
Stable and epitaxial metal/III-V semiconductor heterostructures
Materials Science and Engineering Reports
1990
180
17
Epitaxial growth and properties of YBaCuO thin films
Materials Science and Engineering Reports
1989
177
18
Glow-discharge amorphous silicon: Growth process and structure
Materials Science and Engineering Reports
1987
168
19
Epitaxial growth of transition-metal silicides on silicon
Materials Science and Engineering Reports
1991
168
20
A review of thin-film aluminide formation
Materials Science and Engineering Reports
1990
162
21
Ion beam assisted thin film deposition
Materials Science and Engineering Reports
1991
158
22
Electromigration in thin-film interconnection lines: models, methods and results
Materials Science and Engineering Reports
1991
131
23
Pre-amorphization damage in ion-implanted silicon
Materials Science and Engineering Reports
1991
130
24
Ion-implanted structures and doped layers in diamond
Materials Science and Engineering Reports
1992
126
25
Metal-organic vapor phase epitaxy of compound semiconductors
Materials Science and Engineering Reports
1987
118
26
Copper deposition and thermal stability issues in copper-based metallization for ULSI technology
Materials Science and Engineering Reports
1992
110
27
Thermodynamics and kinetics of phase transformations induced by ion irradiation
Materials Science and Engineering Reports
1991
102
28
Thin film compound phase formation sequence: An effective heat of formation model
Materials Science and Engineering Reports
1993
96
29
Electrical and optical properties of silicide single crystals and thin films
Materials Science and Engineering Reports
1993
94
30
Self-propagating exothermic reactions: The synthesis of high-temperature materials by combustion
Materials Science and Engineering Reports
1989
77
31
Photoinduced deposition of thin films
Materials Science and Engineering Reports
1987
66
32
Metal/semiconductor contact resistivity and its determination from contact resistance measurements
Materials Science and Engineering Reports
1988
62
33
Lattice site occupation of non-soluble elements implanted in metals
Materials Science and Engineering Reports
1987
59
34
Crystallographic analysis and observation of surface micro-areas using microprobe reflection high-energy electron diffraction
Materials Science and Engineering Reports
1989
59
35
Development of ohmic contact materials for GaAs integrated circuits
Materials Science and Engineering Reports
1990
54
36
Damage formation and annealing of ion implantation in Si
Materials Science and Engineering Reports
1991
54
37
Synchrotron X-radiation topography
Materials Science and Engineering Reports
1992
46
38
Non-linear optical materials and applications
Materials Science and Engineering Reports
1993
45
39
Atomic layer epitaxy of III–V compounds using metalorganic and hydride sources
Materials Science and Engineering Reports
1992
44
40
Materials for infrared fibre optics
Materials Science and Engineering Reports
1987
41
41
Properties of noble-metal/silicon junctions
Materials Science and Engineering Reports
1992
41
42
Phase formation in metastable solidification of metals
Materials Science and Engineering Reports
1989
37
43
Semiconductor surface passivation
Materials Science and Engineering Reports
1988
34
44
Transport and degradation in transition metal oxides in chemical potential gradients
Materials Science and Engineering Reports
1991
25
45
Ion-beam-induced epitaxial crystallization and amorphization in silicon
Materials Science and Engineering Reports
1990
23
46
Electronic and optical properties of conducting polymer thin films
Materials Science and Engineering Reports
1993
23
47
Polymer degradation by crazing and its study by small angle scattering techniques
Materials Science and Engineering Reports
1987
22
48
Chemical mapping and its application to interfaces, point defects and materials processing
Materials Science and Engineering Reports
1993
19
49
Interactions between binary metallic alloys and Si, GeSi and GaAs
Materials Science and Engineering Reports
1992
16
50
Ion implantation for isolation of III–V semiconductors
Materials Science and Engineering Reports
1990
13
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