MRS Internet Journal of Nitride Semiconductor Research

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#	Title	Journal	Year	Citations
1	The Polarity of GaN: a Critical Review	MRS Internet Journal of Nitride Semiconductor Research	1998	282
2	A Review of Dry Etching of GaN and Related Materials	MRS Internet Journal of Nitride Semiconductor Research	2000	170
3	Electronic Properties of Ga(In)NAs Alloys	MRS Internet Journal of Nitride Semiconductor Research	2001	169
4	Suppression of phase separation in InGaN due to elastic strain	MRS Internet Journal of Nitride Semiconductor Research	1998	160
5	The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization	MRS Internet Journal of Nitride Semiconductor Research	1997	144
6	The role of piezoelectric fields in GaN-based quantum wells	MRS Internet Journal of Nitride Semiconductor Research	1998	134
7	A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C	MRS Internet Journal of Nitride Semiconductor Research	1999	128
8	Review of polarity determination and control of GaN	MRS Internet Journal of Nitride Semiconductor Research	2004	108
9	Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer	MRS Internet Journal of Nitride Semiconductor Research	1999	107
10	Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD	MRS Internet Journal of Nitride Semiconductor Research	1997	102
11	Growth, Doping and Characterization of Al_xGa_1−xN Thin Film Alloys on 6H-SiC(0001) Substrates	MRS Internet Journal of Nitride Semiconductor Research	1996	101
12	Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys	MRS Internet Journal of Nitride Semiconductor Research	1999	100
13	The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia	MRS Internet Journal of Nitride Semiconductor Research	1999	81
14	High Temperature Elastic Constant Prediction of Some Group III-Nitrides	MRS Internet Journal of Nitride Semiconductor Research	2001	77
15	Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD	MRS Internet Journal of Nitride Semiconductor Research	1998	75
16	Pinholes, Dislocations and Strain Relaxation in InGaN	MRS Internet Journal of Nitride Semiconductor Research	1998	72
17	Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy	MRS Internet Journal of Nitride Semiconductor Research	2002	72
18	300°C GaN/AlGaN Heterojunction Bipolar Transistor	MRS Internet Journal of Nitride Semiconductor Research	1998	70
19	Growth of Ga-face and N-face GaN films using ZnO Substrates	MRS Internet Journal of Nitride Semiconductor Research	1996	67
20	Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2	MRS Internet Journal of Nitride Semiconductor Research	1997	66
21	Novel approach to simulation of group-III nitrides growth by MOVPE	MRS Internet Journal of Nitride Semiconductor Research	1999	66
22	Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces	MRS Internet Journal of Nitride Semiconductor Research	2002	62
23	Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)	MRS Internet Journal of Nitride Semiconductor Research	1998	60
24	Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy	MRS Internet Journal of Nitride Semiconductor Research	1998	59
25	Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents	MRS Internet Journal of Nitride Semiconductor Research	1998	58
26	Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes	MRS Internet Journal of Nitride Semiconductor Research	1999	57
27	Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor	MRS Internet Journal of Nitride Semiconductor Research	1999	57
28	Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes	MRS Internet Journal of Nitride Semiconductor Research	1997	56
29	Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire	MRS Internet Journal of Nitride Semiconductor Research	1996	55
30	Physical Properties of Bulk GaN Crystals Grown by HVPE	MRS Internet Journal of Nitride Semiconductor Research	1997	53
31	The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs	MRS Internet Journal of Nitride Semiconductor Research	2003	53
32	The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1−xN quantum wells	MRS Internet Journal of Nitride Semiconductor Research	2000	52
33	InGaN/GaN/AlGaN-Based Leds and Laser Diodes	MRS Internet Journal of Nitride Semiconductor Research	1999	51
34	Effect of internal absorption on cathodoluminescence from GaN	MRS Internet Journal of Nitride Semiconductor Research	1998	48
35	Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1−xN measured by Infrared Ellipsometry	MRS Internet Journal of Nitride Semiconductor Research	1999	48
36	Strain relaxation in GaN layers grown on porous GaN sublayers	MRS Internet Journal of Nitride Semiconductor Research	1999	48
37	Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System	MRS Internet Journal of Nitride Semiconductor Research	1999	48
38	Thermodynamic properties of group-III nitrides and related species	MRS Internet Journal of Nitride Semiconductor Research	1998	46
39	Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy	MRS Internet Journal of Nitride Semiconductor Research	1998	46
40	Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence	MRS Internet Journal of Nitride Semiconductor Research	1998	46
41	Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory	MRS Internet Journal of Nitride Semiconductor Research	2001	46
42	ScAlMgO₄: an Oxide Substrate for GaN Epitaxy	MRS Internet Journal of Nitride Semiconductor Research	1996	45
43	Free Excitons in GaN	MRS Internet Journal of Nitride Semiconductor Research	1996	45
44	Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry	MRS Internet Journal of Nitride Semiconductor Research	2000	45
45	Solar-Blind AlGaN Heterostructure Photodiodes	MRS Internet Journal of Nitride Semiconductor Research	2000	44
46	AMMONO method of BN, AlN and GaN synthesis and crystal growth.	MRS Internet Journal of Nitride Semiconductor Research	1998	41
47	Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN	MRS Internet Journal of Nitride Semiconductor Research	1996	39
48	Wet Chemical Etching of AlN Single Crystals	MRS Internet Journal of Nitride Semiconductor Research	2002	39
49	GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition	MRS Internet Journal of Nitride Semiconductor Research	1998	38
50	Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN	MRS Internet Journal of Nitride Semiconductor Research	1998	38

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