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MRS Internet Journal of Nitride Semiconductor Research
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top-articles
MRS Internet Journal of Nitride Semiconductor Research
1.0
(top 50%)
impact factor
504
(top 50%)
papers
6.7K
(top 20%)
citations
44
(top 20%)
h
-index
1.0
(top 50%)
impact factor
504
all documents
6.8K
doc citations
65
(top 20%)
g
-index
Top Articles
#
Title
Journal
Year
Citations
1
The Polarity of GaN: a Critical Review
MRS Internet Journal of Nitride Semiconductor Research
1998
282
2
A Review of Dry Etching of GaN and Related Materials
MRS Internet Journal of Nitride Semiconductor Research
2000
170
3
Electronic Properties of Ga(In)NAs Alloys
MRS Internet Journal of Nitride Semiconductor Research
2001
169
4
Suppression of phase separation in InGaN due to elastic strain
MRS Internet Journal of Nitride Semiconductor Research
1998
160
5
The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
MRS Internet Journal of Nitride Semiconductor Research
1997
144
6
The role of piezoelectric fields in GaN-based quantum wells
MRS Internet Journal of Nitride Semiconductor Research
1998
134
7
A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
MRS Internet Journal of Nitride Semiconductor Research
1999
128
8
Review of polarity determination and control of GaN
MRS Internet Journal of Nitride Semiconductor Research
2004
108
9
Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
MRS Internet Journal of Nitride Semiconductor Research
1999
107
10
Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
MRS Internet Journal of Nitride Semiconductor Research
1997
102
11
Growth, Doping and Characterization of Al
x
Ga
1−x
N Thin Film Alloys on 6H-SiC(0001) Substrates
MRS Internet Journal of Nitride Semiconductor Research
1996
101
12
Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys
MRS Internet Journal of Nitride Semiconductor Research
1999
100
13
The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
MRS Internet Journal of Nitride Semiconductor Research
1999
81
14
High Temperature Elastic Constant Prediction of Some Group III-Nitrides
MRS Internet Journal of Nitride Semiconductor Research
2001
77
15
Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
MRS Internet Journal of Nitride Semiconductor Research
1998
75
16
Pinholes, Dislocations and Strain Relaxation in InGaN
MRS Internet Journal of Nitride Semiconductor Research
1998
72
17
Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
MRS Internet Journal of Nitride Semiconductor Research
2002
72
18
300°C GaN/AlGaN Heterojunction Bipolar Transistor
MRS Internet Journal of Nitride Semiconductor Research
1998
70
19
Growth of Ga-face and N-face GaN films using ZnO Substrates
MRS Internet Journal of Nitride Semiconductor Research
1996
67
20
Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2
MRS Internet Journal of Nitride Semiconductor Research
1997
66
21
Novel approach to simulation of group-III nitrides growth by MOVPE
MRS Internet Journal of Nitride Semiconductor Research
1999
66
22
Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
MRS Internet Journal of Nitride Semiconductor Research
2002
62
23
Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
MRS Internet Journal of Nitride Semiconductor Research
1998
60
24
Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
MRS Internet Journal of Nitride Semiconductor Research
1998
59
25
Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
MRS Internet Journal of Nitride Semiconductor Research
1998
58
26
Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes
MRS Internet Journal of Nitride Semiconductor Research
1999
57
27
Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
MRS Internet Journal of Nitride Semiconductor Research
1999
57
28
Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
MRS Internet Journal of Nitride Semiconductor Research
1997
56
29
Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
MRS Internet Journal of Nitride Semiconductor Research
1996
55
30
Physical Properties of Bulk GaN Crystals Grown by HVPE
MRS Internet Journal of Nitride Semiconductor Research
1997
53
31
The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
MRS Internet Journal of Nitride Semiconductor Research
2003
53
32
The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In
x
Ga
1−x
N quantum wells
MRS Internet Journal of Nitride Semiconductor Research
2000
52
33
InGaN/GaN/AlGaN-Based Leds and Laser Diodes
MRS Internet Journal of Nitride Semiconductor Research
1999
51
34
Effect of internal absorption on cathodoluminescence from GaN
MRS Internet Journal of Nitride Semiconductor Research
1998
48
35
Optical phonons and free-carrier effects in MOVPE grown Al
x
Ga
1−x
N measured by Infrared Ellipsometry
MRS Internet Journal of Nitride Semiconductor Research
1999
48
36
Strain relaxation in GaN layers grown on porous GaN sublayers
MRS Internet Journal of Nitride Semiconductor Research
1999
48
37
Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
MRS Internet Journal of Nitride Semiconductor Research
1999
48
38
Thermodynamic properties of group-III nitrides and related species
MRS Internet Journal of Nitride Semiconductor Research
1998
46
39
Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
MRS Internet Journal of Nitride Semiconductor Research
1998
46
40
Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
MRS Internet Journal of Nitride Semiconductor Research
1998
46
41
Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
MRS Internet Journal of Nitride Semiconductor Research
2001
46
42
ScAlMgO
4
: an Oxide Substrate for GaN Epitaxy
MRS Internet Journal of Nitride Semiconductor Research
1996
45
43
Free Excitons in GaN
MRS Internet Journal of Nitride Semiconductor Research
1996
45
44
Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
MRS Internet Journal of Nitride Semiconductor Research
2000
45
45
Solar-Blind AlGaN Heterostructure Photodiodes
MRS Internet Journal of Nitride Semiconductor Research
2000
44
46
AMMONO method of BN, AlN and GaN synthesis and crystal growth.
MRS Internet Journal of Nitride Semiconductor Research
1998
41
47
Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
MRS Internet Journal of Nitride Semiconductor Research
1996
39
48
Wet Chemical Etching of AlN Single Crystals
MRS Internet Journal of Nitride Semiconductor Research
2002
39
49
GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
MRS Internet Journal of Nitride Semiconductor Research
1998
38
50
Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
MRS Internet Journal of Nitride Semiconductor Research
1998
38
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