| # | Title | Journal | Year | Citations |
|---|
| 1 | The use of magnetic fields in semiconductor crystal growth | Journal of Crystal Growth | 1991 | 192 |
| 2 | A Simple Model for the Synoptic Analysis of Cold Fronts | Quarterly Journal of the Royal Meteorological Society | 1982 | 172 |
| 3 | Efficient visible electroluminescence from highly porous silicon under cathodic bias | Applied Physics Letters | 1992 | 163 |
| 4 | Novel 1‐to‐Nway integrated optical beam splitters using symmetric mode mixing in GaAs/AlGaAs multimode waveguides | Applied Physics Letters | 1992 | 130 |
| 5 | Biexciton creation and recombination in a GaAs quantum well | Physical Review B | 1992 | 122 |
| 6 | Zone folding, morphogenesis of charge densities, and the role of periodicity in GaAs-AlxGa1−xAs (001) superlattices | Physical Review B | 1986 | 109 |
| 7 | On the Forecasting of Frontal Rain Using a Weather Radar Network | Monthly Weather Review | 1982 | 94 |
| 8 | Optical properties and applications of diamond-like carbon coatings | Diamond and Related Materials | 1992 | 86 |
| 9 | Mesoscale structure of line convection at surface cold fronts | Quarterly Journal of the Royal Meteorological Society | 1979 | 82 |
| 10 | Solubility and point defect-dopant interactions in GaAs —I | Journal of Physics and Chemistry of Solids | 1979 | 81 |
| 11 | Shedding light on alignment | Nature | 1991 | 81 |
| 12 | Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields | Physical Review B | 1990 | 80 |
| 13 | Two-color photons and nonlocality in fourth-order interference | Physical Review A | 1990 | 79 |
| 14 | The location and shape of the conduction band minima in cubic silicon carbide | Journal of Luminescence | 1977 | 75 |
| 15 | Use of parametric down-conversion to generate sub-Poissonian light | Physical Review A | 1988 | 71 |
| 16 | Surface topography changes during the growth of GaAs by molecular beam epitaxy | Applied Physics Letters | 1991 | 71 |
| 17 | Donor discrimination and bound exciton spectra in InP | Journal of Applied Physics | 1983 | 70 |
| 18 | Phonon coupling andX−Γmixing in GaAs-AlAs short-period superlattices | Physical Review B | 1989 | 70 |
| 19 | Blood flow imaging using electrical impedance tomography | Clinical Physics and Physiological Measurement: an Official Journal of the Hospital Physicists' Association, Deutsche Gesellschaft Fur Medizinische Physik and the European Federation of Organisations for Medical Physics | 1992 | 58 |
| 20 | The “JOERS/Alvey” ferroelectric multiplexing scheme | Ferroelectrics | 1991 | 56 |
| 21 | Interfering entangled photons of different colors | Physical Review Letters | 1993 | 56 |
| 22 | Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessment | Journal of Electronic Materials | 1986 | 55 |
| 23 | In-crystal hyperpolarizabilities ofF−andCl− | Physical Review B | 1984 | 52 |
| 24 | Note on the paper ‘Radiation conditions for the lateral boundaries of limited-area numerical models’ | Quarterly Journal of the Royal Meteorological Society | 1982 | 51 |
| 25 | Novel phased array optical scanning device implemented using GaAs/AlGaAs technology | Applied Physics Letters | 1991 | 50 |
| 26 | The use of average annual rainfall to derive estimates of orographic enhancement of frontal rain over England and Wales for different wind directions | Journal of Climatology | 1983 | 49 |
| 27 | The Czochralski growth of single crystal lithium aluminate, LiAlO2 | Journal of Crystal Growth | 1981 | 46 |
| 28 | Excitation mechanisms of photoluminescence in double-barrier resonant-tunneling structures | Physical Review B | 1990 | 44 |
| 29 | Microroughness Measurements on Polished Silicon Wafers | Japanese Journal of Applied Physics | 1992 | 44 |
| 30 | Measurement of the biaxial permittivities for several smectic C host materials used in ferroelectric liquid crystal devices | Liquid Crystals | 1992 | 43 |
| 31 | Gallium arsenide traveling-wave field-effect transistors | IEEE Transactions on Electron Devices | 1985 | 42 |
| 32 | Hydrostatic pressure coefficients of the photoluminescence ofInxGa1−xAs/GaAs strained-layer quantum wells | Physical Review B | 1990 | 42 |
| 33 | New family of bulk-acoustic-wave devices employing interdigital transducers | Electronics Letters | 1977 | 41 |
| 34 | Experimental evaluation of duration modelling techniques for automatic speech recognition | | 1987 | 41 |
| 35 | Nonlinear analysis of quantum fluctuations in absorptive optical bistability | Physical Review A | 1986 | 39 |
| 36 | Separation of two distinct fast interface state contributions at the (100)Si/SiO2interface using the conductance technique | Applied Physics Letters | 1992 | 39 |
| 37 | A Multistate Reflectometer | IEEE Transactions on Instrumentation and Measurement | 1985 | 38 |
| 38 | The effect of the biaxial permittivity tensor and tilted layer geometries on the switching of ferroelectric liquid crystals | Liquid Crystals | 1992 | 37 |
| 39 | Lithium Tetraborate - A New Temperature Compensated Piezoelectric Substrate Material for Surface Acoustic Wave Devices | | 1981 | 33 |
| 40 | Analysis of porous silicon | Nuclear Instruments & Methods in Physics Research B | 1985 | 31 |
| 41 | Excitons and polaritons in InP | Physical Review B | 1985 | 31 |
| 42 | GaP/phthalocyanine Langmuir–Blodgett film electroluminescent diode | Electronics Letters | 1984 | 30 |
| 43 | The Czochralski growth and laser characteristics of Li(Y, Er, Tm, Ho) F4 and Li(Lu, Er, Tm, Ho) F4 scheelite single crystals | Journal of Crystal Growth | 1981 | 29 |
| 44 | Mesoscale analysis of a polar trough interacting with a polar front | Quarterly Journal of the Royal Meteorological Society | 1985 | 29 |
| 45 | Review Lecture: Local weather forecasting | Proceedings of the Royal Society of London Series A, Mathematical and Physical Sciences | 1980 | 28 |
| 46 | Solubility and point defect-dopant interactions in gallium arsenide—III | Journal of Physics and Chemistry of Solids | 1979 | 27 |
| 47 | Stark-ladder behavior of theXlevels in a type-II GaAs/AlAs superlattice measured using electroreflectance spectroscopy | Physical Review B | 1990 | 26 |
| 48 | Above-threshold laser amplifier | Physical Review Letters | 1991 | 26 |
| 49 | UV photo-assisted crystal growth of II-VI compounds | Critical Reviews in Solid State and Materials Sciences | 1987 | 25 |
| 50 | Slow annealing versus multiple fast annealing runs — an empirical investigation | Parallel Computing | 1990 | 25 |
