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exaly
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Motorola
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top-articles
Motorola
116
(top 1%)
papers
4.9K
(top 1%)
citations
28
(top 1%)
h
-index
70
(top 1%)
g
-index
142
all documents
5.2K
doc citations
871
citing journals
Top Articles
#
Title
Journal
Year
Citations
1
Locating the nodes: cooperative localization in wireless sensor networks
IEEE Signal Processing Magazine
2005
2,487
2
A New Preferential Etch for Defects in Silicon Crystals
Journal of the Electrochemical Society
1977
361
3
Geometrically-Controlled and Site-Specifically-Functionalized Phenylacetylene Macrocycles
Journal of the American Chemical Society
1994
193
4
Stability of carbon nanotubes under electric field studied by scanning electron microscopy
Applied Physics Letters
2001
115
5
Nematic-smectic-A-smectic-Cpolycritical point: Experimental evidence and a Landau theory
Physical Review B
1977
103
6
Oxidation‐induced stacking faults in silicon. I. Nucleation phenomenon
Journal of Applied Physics
1974
100
7
Embedded-atom-method tantalum potential developed by the force-matching method
Physical Review B
2003
93
8
Oxidation‐induced stacking faults in silicon. II. Electrical effects in P N diodes
Journal of Applied Physics
1974
88
9
Electrically Active Stacking Faults in Silicon
Journal of the Electrochemical Society
1973
85
10
An Improved Approach to Accurately Model Shallow B and BF 2 Implants in Silicon
Journal of the Electrochemical Society
1989
82
11
On the Constitutive Response of 63/37 Sn/Pb Eutectic Solder
Journal of Engineering Materials and Technology, Transactions of the ASME
1996
72
12
Radio frequency sputter deposited boron nitride films
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
1984
64
13
The 3GPP and 3GPP2 movements toward an all-IP mobile network
IEEE Personal Communications
2000
62
14
Characteristics of LaAlO3 gate dielectrics on Si grown by metalorganic chemical vapor deposition
Applied Physics Letters
2003
61
15
Porous Methylsilsesquioxane for Low-k Dielectric Applications
Electrochemical and Solid-State Letters
2001
59
16
Evidence for a Smectic-A—Nematic Tricritical Point: Binary Mixtures
Physical Review Letters
1975
55
17
Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs
Applied Physics Letters
2003
49
18
Minimality and observability of group systems
Linear Algebra and Its Applications
1994
48
19
Selectivity Mechanisms in Low Pressure Selective Epitaxial Silicon Growth
Journal of the Electrochemical Society
1994
47
20
Diffusion of Manganese in Single Crystalline Manganous Oxide
Journal of the Electrochemical Society
1970
45
21
Band offsets at the interfaces of GaAs(100) with GdxGa0.4-xO0.6 insulators
Applied Physics Letters
2004
38
22
Effect of Oxidizing Ambients on Platinum Silicide Formation: I . Electron Microprobe Analysis
Journal of the Electrochemical Society
1975
36
23
The Erosion of Materials in Molten Silicon
Journal of the Electrochemical Society
1976
36
24
Process development of sub-0.5 μm nonvolatile magnetoresistive random access memory arrays
Journal of Vacuum Science & Technology an Official Journal of the American Vacuum Society B, Microelectronics Processing and Phenomena
1997
36
25
Dielectric Properties of Radio Frequency Magnetron Sputter Deposited Zirconium Titanate‐Based Thin Films
Journal of the Electrochemical Society
1998
35
26
Growth of crack-free hexagonal GaN films on Si(100)
Applied Physics Letters
2001
32
27
Interfacial reaction of eutectic AuSi solder with Si (100) and Si (111) surfaces
Journal of Applied Physics
2004
30
28
Wildfire: distributed, Grid-enabled workflow construction and execution
BMC Bioinformatics
2005
29
29
Interaction of CVD Silicon with Molybdenum Substrates
Journal of the Electrochemical Society
1981
24
30
Characterization of Spin‐On‐Glass Using Fourier Transform Infrared Spectroscopy
Journal of the Electrochemical Society
1990
24
31
Ellipsometry for rapid characterization of Si1−xGexlayers
Applied Physics Letters
1992
24
32
Cellular based location technologies for UMTS: a comparison between IPDL and TA-IPDL
Applied Physics Letters
0
22
33
Characterization of integrated logic circuits
Proceedings of the IEEE
1964
19
34
Steady‐state temperature profiles in narrow thin‐film conductors
Journal of Applied Physics
1985
19
35
Fast diffusion of As in polycrystalline silicon during rapid thermal annealing
Applied Physics Letters
1984
18
36
The effect of mechanical constraint on the flow and fracture of 63/37 Sn/Pb eutectic alloy
Engineering Fracture Mechanics
1995
18
37
RCA Clean Replacement
Journal of the Electrochemical Society
1996
18
38
Theoretical and experimental investigation of boron diffusion in polycrystalline HfO2 films
Applied Physics Letters
2002
18
39
Optical and electrical properties of amorphous GdxGa0.4−xO0.6 films in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs
Applied Physics Letters
2004
18
40
Investigation of Polyimide Residue Due to Reactive Ion Etching in O 2
Journal of the Electrochemical Society
1996
16
41
A heuristic cross-layer mechanism for real-time traffic over IEEE 802.16 networks
International Journal of Network Management
2007
16
42
Thin Silicon Film on Insulating Substrate
Journal of the Electrochemical Society
1973
15
43
Computers: Projecting VLSI's impact on microprocessors: Single-chip microcomputers with 1 million bits of information, English-language programming, and canned software are seen ahead
IEEE Spectrum
1979
14
44
Theory of zeolite supralattices: Se in zeolite Linde type A
Journal of Physics Condensed Matter
2001
14
45
Comments on the distinction between ``striations'' and ``swirls'' in silicon
Applied Physics Letters
1974
13
46
Single instruction stream parallelism is greater than two
Computer Architecture News
1991
13
47
Fabrication of High Voltage Polysilicon TFT's on an Insulator
Journal of the Electrochemical Society
1986
12
48
Effect of RTA on Thin Thermal Oxide
Journal of the Electrochemical Society
1988
12
49
Spray Etching of Silicon in the HNO 3 / HF / H 2 O System
Journal of the Electrochemical Society
1993
12
50
Etch characteristics of an amorphous refractory absorber
Microelectronic Engineering
1996
12
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