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#TitleJournalYearCitations
1Locating the nodes: cooperative localization in wireless sensor networksIEEE Signal Processing Magazine20052,487
2A New Preferential Etch for Defects in Silicon CrystalsJournal of the Electrochemical Society1977361
3Geometrically-Controlled and Site-Specifically-Functionalized Phenylacetylene MacrocyclesJournal of the American Chemical Society1994193
4Stability of carbon nanotubes under electric field studied by scanning electron microscopyApplied Physics Letters2001115
5Nematic-smectic-A-smectic-Cpolycritical point: Experimental evidence and a Landau theoryPhysical Review B1977103
6Oxidation‐induced stacking faults in silicon. I. Nucleation phenomenonJournal of Applied Physics1974100
7Embedded-atom-method tantalum potential developed by the force-matching methodPhysical Review B200393
8Oxidation‐induced stacking faults in silicon. II. Electrical effects in P N diodesJournal of Applied Physics197488
9Electrically Active Stacking Faults in SiliconJournal of the Electrochemical Society197385
10An Improved Approach to Accurately Model Shallow B and  BF 2 Implants in SiliconJournal of the Electrochemical Society198982
11On the Constitutive Response of 63/37 Sn/Pb Eutectic SolderJournal of Engineering Materials and Technology, Transactions of the ASME199672
12Radio frequency sputter deposited boron nitride filmsJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films198464
13The 3GPP and 3GPP2 movements toward an all-IP mobile networkIEEE Personal Communications200062
14Characteristics of LaAlO3 gate dielectrics on Si grown by metalorganic chemical vapor depositionApplied Physics Letters200361
15Porous Methylsilsesquioxane for Low-k Dielectric ApplicationsElectrochemical and Solid-State Letters200159
16Evidence for a Smectic-A—Nematic Tricritical Point: Binary MixturesPhysical Review Letters197555
17Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAsApplied Physics Letters200349
18Minimality and observability of group systemsLinear Algebra and Its Applications199448
19Selectivity Mechanisms in Low Pressure Selective Epitaxial Silicon GrowthJournal of the Electrochemical Society199447
20Diffusion of Manganese in Single Crystalline Manganous OxideJournal of the Electrochemical Society197045
21Band offsets at the interfaces of GaAs(100) with GdxGa0.4-xO0.6 insulatorsApplied Physics Letters200438
22Effect of Oxidizing Ambients on Platinum Silicide Formation: I . Electron Microprobe AnalysisJournal of the Electrochemical Society197536
23The Erosion of Materials in Molten SiliconJournal of the Electrochemical Society197636
24Process development of sub-0.5 μm nonvolatile magnetoresistive random access memory arraysJournal of Vacuum Science & Technology an Official Journal of the American Vacuum Society B, Microelectronics Processing and Phenomena199736
25Dielectric Properties of Radio Frequency Magnetron Sputter Deposited Zirconium Titanate‐Based Thin FilmsJournal of the Electrochemical Society199835
26Growth of crack-free hexagonal GaN films on Si(100)Applied Physics Letters200132
27Interfacial reaction of eutectic AuSi solder with Si (100) and Si (111) surfacesJournal of Applied Physics200430
28Wildfire: distributed, Grid-enabled workflow construction and executionBMC Bioinformatics200529
29Interaction of CVD Silicon with Molybdenum SubstratesJournal of the Electrochemical Society198124
30Characterization of Spin‐On‐Glass Using Fourier Transform Infrared SpectroscopyJournal of the Electrochemical Society199024
31Ellipsometry for rapid characterization of Si1−xGexlayersApplied Physics Letters199224
32Cellular based location technologies for UMTS: a comparison between IPDL and TA-IPDLApplied Physics Letters022
33Characterization of integrated logic circuitsProceedings of the IEEE196419
34Steady‐state temperature profiles in narrow thin‐film conductorsJournal of Applied Physics198519
35Fast diffusion of As in polycrystalline silicon during rapid thermal annealingApplied Physics Letters198418
36The effect of mechanical constraint on the flow and fracture of 63/37 Sn/Pb eutectic alloyEngineering Fracture Mechanics199518
37RCA Clean ReplacementJournal of the Electrochemical Society199618
38Theoretical and experimental investigation of boron diffusion in polycrystalline HfO2 filmsApplied Physics Letters200218
39Optical and electrical properties of amorphous GdxGa0.4−xO0.6 films in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAsApplied Physics Letters200418
40Investigation of Polyimide Residue Due to Reactive Ion Etching in  O 2Journal of the Electrochemical Society199616
41A heuristic cross-layer mechanism for real-time traffic over IEEE 802.16 networksInternational Journal of Network Management200716
42Thin Silicon Film on Insulating SubstrateJournal of the Electrochemical Society197315
43Computers: Projecting VLSI's impact on microprocessors: Single-chip microcomputers with 1 million bits of information, English-language programming, and canned software are seen aheadIEEE Spectrum197914
44Theory of zeolite supralattices: Se in zeolite Linde type AJournal of Physics Condensed Matter200114
45Comments on the distinction between ``striations'' and ``swirls'' in siliconApplied Physics Letters197413
46Single instruction stream parallelism is greater than twoComputer Architecture News199113
47Fabrication of High Voltage Polysilicon TFT's on an InsulatorJournal of the Electrochemical Society198612
48Effect of RTA on Thin Thermal OxideJournal of the Electrochemical Society198812
49Spray Etching of Silicon in the  HNO 3 /  HF  /  H 2 O  SystemJournal of the Electrochemical Society199312
50Etch characteristics of an amorphous refractory absorberMicroelectronic Engineering199612