| # | Title | Journal | Year | Citations |
|---|
| 1 | Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils | Science | 2009 | 10,000 |
| 2 | A roadmap for graphene | Nature | 2012 | 8,011 |
| 3 | Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage | Science | 2015 | 2,925 |
| 4 | Femtocell networks: a survey | Science | 2008 | 2,538 |
| 5 | Electronics based on two-dimensional materials | Nature Nanotechnology | 2014 | 2,505 |
| 6 | Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems | Nanoscale | 2015 | 2,452 |
| 7 | Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper | Journal of the American Chemical Society | 2011 | 1,161 |
| 8 | The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper | Science | 2013 | 977 |
| 9 | Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure | Physical Review Letters | 1988 | 952 |
| 10 | Hafnium and zirconium silicates for advanced gate dielectrics | Journal of Applied Physics | 2000 | 931 |
| 11 | Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process | Nano Letters | 2010 | 896 |
| 12 | Production and processing of graphene and 2d crystals | Materials Today | 2012 | 866 |
| 13 | The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2 | Applied Physics Letters | 2011 | 829 |
| 14 | Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric | Applied Physics Letters | 2009 | 827 |
| 15 | INTEGRAL FORMULATION FOR MIGRATION IN TWO AND THREE DIMENSIONS | Geophysics | 1978 | 796 |
| 16 | Tunneling of a Wave Packet | Journal of Applied Physics | 1962 | 734 |
| 17 | Single and multiband modeling of quantum electron transport through layered semiconductor devices | Journal of Applied Physics | 1997 | 719 |
| 18 | The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces | Nano Letters | 2014 | 629 |
| 19 | All-digital PLL and transmitter for mobile phones | IEEE Journal of Solid-State Circuits | 2005 | 522 |
| 20 | A MEMS-based projection display | Proceedings of the IEEE | 1998 | 520 |
| 21 | Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon | Applied Physics Letters | 1999 | 499 |
| 22 | All-digital TX frequency synthesizer and discrete-time receiver for Bluetooth radio in 130-nm CMOS | IEEE Journal of Solid-State Circuits | 2004 | 486 |
| 23 | Volt-current characteristics for tunneling through insulating films | Journal of Physics and Chemistry of Solids | 1962 | 446 |
| 24 | Forwarding metamorphosis | Journal of Physics and Chemistry of Solids | 2013 | 439 |
| 25 | Scientific Charge-Coupled Devices | Optical Engineering | 1987 | 401 |
| 26 | Kirkendall void formation in eutectic SnPb solder joints on bare Cu and its effect on joint reliability | Journal of Applied Physics | 2005 | 390 |
| 27 | Counterfeit Integrated Circuits: A Rising Threat in the Global Semiconductor Supply Chain | Proceedings of the IEEE | 2014 | 384 |
| 28 | Yield and speed optimization of a latch-type voltage sense amplifier | IEEE Journal of Solid-State Circuits | 2004 | 379 |
| 29 | Variation of Dielectric Constant with Voltage in Ferroelectrics and Its Application to Parametric Devices | Journal of Applied Physics | 1962 | 376 |
| 30 | Security in embedded systems | Transactions on Embedded Computing Systems | 2004 | 374 |
| 31 | A Reduced Complexity Decoder Architecture via Layered Decoding of LDPC Codes | Transactions on Embedded Computing Systems | 0 | 370 |
| 32 | THE RELATIONSHIP BETWEEN MAXIMUM ENTROPY SPECTRA AND MAXIMUM LIKELIHOOD SPECTRA | Geophysics | 1972 | 365 |
| 33 | Application of HfSiON as a gate dielectric material | Applied Physics Letters | 2002 | 364 |
| 34 | Adaptive Bilateral Filter for Sharpness Enhancement and Noise Removal | IEEE Transactions on Image Processing | 2008 | 359 |
| 35 | Cooperative Communications in Resource-Constrained Wireless Networks | IEEE Signal Processing Magazine | 2007 | 345 |
| 36 | Transition density: a new measure of activity in digital circuits | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems | 1993 | 333 |
| 37 | Emerging digital micromirror device (DMD) applications | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems | 2003 | 323 |
| 38 | A case study of ir-drop in structured at-speed testing | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems | 0 | 320 |
| 39 | High-Frequency Transformer Isolated Bidirectional DC–DC Converter Modules With High Efficiency Over Wide Load Range for 20 kVA Solid-State Transformer | IEEE Transactions on Power Electronics | 2011 | 318 |
| 40 | Forwarding metamorphosis | Computer Communication Review | 2013 | 318 |
| 41 | Stable zirconium silicate gate dielectrics deposited directly on silicon | Applied Physics Letters | 2000 | 316 |
| 42 | Surface Defects on Natural MoS2 | ACS Applied Materials & Interfaces | 2015 | 303 |
| 43 | Toward the Controlled Synthesis of Hexagonal Boron Nitride Films | ACS Nano | 2012 | 295 |
| 44 | Anomalous leakage current in LPCVD PolySilicon MOSFET's | IEEE Transactions on Electron Devices | 1985 | 289 |
| 45 | Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene | Nature Nanotechnology | 2016 | 287 |
| 46 | Indentation-induced phase transformations in silicon: influences of load, rate and indenter angle on the transformation behavior | Acta Materialia | 2005 | 286 |
| 47 | Performance modeling of asynchronous data transfer methods of IEEE 802.11 MAC protocol | Wireless Networks | 1997 | 284 |
| 48 | Banyan networks for partitioning multiprocessor systems | Wireless Networks | 1998 | 280 |
| 49 | 1.3 V 20 ps time-to-digital converter for frequency synthesis in 90-nm CMOS | IEEE Transactions on Circuits and Systems Part 2: Express Briefs | 2006 | 278 |
| 50 | Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys | Solid-State Electronics | 1967 | 269 |
