| Mechanisms behind green photoluminescence in ZnO phosphor powders | Journal of Applied Physics | 1996 | 3.2K |
| Polymer Layered Silicate Nanocomposites | Advanced Materials | 1996 | 3K |
| Large magnetic‐field‐induced strains in Ni2MnGa single crystals | Applied Physics Letters | 1996 | 2.3K |
| InGaN-Based Multi-Quantum-Well-Structure Laser Diodes | Japanese Journal of Applied Physics | 1996 | 2.1K |
| (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs | Applied Physics Letters | 1996 | 2K |
| Femtosecond, picosecond and nanosecond laser ablation of solids | Applied Physics A: Materials Science and Processing | 1996 | 1.8K |
| Parameterization of the optical functions of amorphous materials in the interband region | Applied Physics Letters | 1996 | 1.8K |
| Correlation between photoluminescence and oxygen vacancies in ZnO phosphors | Applied Physics Letters | 1996 | 1.7K |
| Soluble and processable regioregular poly(3‐hexylthiophene) for thin film field‐effect transistor applications with high mobility | Applied Physics Letters | 1996 | 1.5K |
| A silicon nanocrystals based memory | Applied Physics Letters | 1996 | 1.4K |
| Entropy generation minimization: The new thermodynamics of finite‐size devices and finite‐time processes | Journal of Applied Physics | 1996 | 1.3K |
| Organic electroluminescent devices with improved stability | Applied Physics Letters | 1996 | 1.2K |
| Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data | Applied Physics Letters | 1996 | 1.2K |
| GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance | Japanese Journal of Applied Physics | 1996 | 1.2K |
| Semiconductor ultraviolet detectors | Journal of Applied Physics | 1996 | 1.2K |
| Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys | Journal of Applied Physics | 1996 | 1.1K |
| Nanocrystal gold molecules | Advanced Materials | 1996 | 1.1K |
| Spontaneous emission of localized excitons in InGaN single and multiquantum well structures | Applied Physics Letters | 1996 | 1.1K |
| Raman spectroscopy on amorphous carbon films | Journal of Applied Physics | 1996 | 1.1K |
| Gallium vacancies and the yellow luminescence in GaN | Applied Physics Letters | 1996 | 963 |
| High critical current density superconducting tapes by epitaxial deposition of YBa2Cu3Ox thick films on biaxially textured metals | Applied Physics Letters | 1996 | 885 |
| Solid phase immiscibility in GaInN | Applied Physics Letters | 1996 | 859 |
| Fabrication of Gold Nanodot Array Using Anodic Porous Alumina as an Evaporation Mask | Japanese Journal of Applied Physics | 1996 | 845 |
| The effect of dislocation contrast on x‐ray line broadening: A new approach to line profile analysis | Applied Physics Letters | 1996 | 808 |
| Relationship between electroluminescence and current transport in organic heterojunction light‐emitting devices | Journal of Applied Physics | 1996 | 747 |
