The fabrication of epitaxial graphene (EG) on SiC substrate by annealing has attracted a lot of interest as it may speed up the application of graphene for future electronic devices. The interaction of EG and the SiC substrate is critical to its electronic and physical properties. In this work, the Raman spectroscopy was used to study the structure of EG and its interaction with SiC substrate. All the Raman bands of EG blueshift from that of bulk graphite and graphene made by micromechanical cleavage, which was attributed to the compressive strain induced by the substrate. A model containing $13\times 13$ honeycomb lattice cells of graphene on carbon nanomesh was constructed to explain the origin of strain. The lattice mismatch between graphene layer and substrate causes the compressive stress of $2.27\mathrm{GPa}$ on graphene. We also demonstrate that the electronic structures of EG grown on Si- and C-terminated SiC substrates are quite different. Our experimental results shed light on the interaction between graphene and SiC substrate, which are critical to the future applications of EG.

• Received 5 December 2007

DOI:https://doi.org/10.1103/PhysRevB.77.115416