Exciton binding energy in quantum wells

G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki
Phys. Rev. B 26, 1974 – Published 15 August 1982
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Abstract

Variational calculations are presented of the ground exciton state in quantum wells. For the GaAs-GaAlAs system, the results obtained from a trial wave function not separable in spatial coordinates are shown to be valid throughout the entire well-thickness range, corresponding in the thin and thick limits to two- and three-dimensional situations, respectively. For the InAs-GaSb system, in which electrons and holes are present in spatially separated regions, the exciton binding is substantially reduced. In the limit of thin wells, the binding energy is only about one-fourth of the two-dimensional value.

  • Received 15 March 1982

DOI:https://doi.org/10.1103/PhysRevB.26.1974

©1982 American Physical Society

Authors & Affiliations

G. Bastard*, E. E. Mendez, L. L. Chang, and L. Esaki

  • IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598

  • *Permanent address: Groupe de Physique des Solides de l'E.N.S., 24 rue Lhomond 75231 Paris Cedex 05, France.

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Vol. 26, Iss. 4 — 15 August 1982

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