Abstract
We employ inductively-coupled plasma chemical vapor deposition for non-catalytic growth of graphene on a Si (111) wafer or glass substrate, which is useful for practical device applications of graphene without transfer processes. At a RF power (P) of 500 W under C2H2 flow, defect-free 3 ∼ 5-layer graphene is grown on Si (111) wafers, but on glass substrate, the layer is thicker and defective, as characterized by Raman spectroscopy and electron microscopy. The graphene is produced on Si (111) for P down to 190 W whereas it is almost not formed on glass for P < 250 W, possibly resulting from the weak catalytic-reaction-like effect on glass. These results are discussed based on possible growth mechanisms.
Similar content being viewed by others
Explore related subjects
Discover the latest articles and news from researchers in related subjects, suggested using machine learning.References
K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos and A. A. Firsov, Nature 438, 197 (2005).
K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva and A. A. Firsov, Science 306, 666 (2004).
A. K. Geim and K. S. Novoselov, Nat. Mater. 6, 183 (2007).
P. R. Wallace, Phys. Rev. 71, 622 (1947).
Y. Zhang, J. W. Tan, H. L. Stormer and P. Kim, Nature 438, 201 (2005).
B. Partoens and F. M. Peeters, Phys. Rev. B 74, 075404 (2006).
X. Li, X. Wang, L. Zhang, S. Lee and H. Dai, Science 319, 1229 (2008).
C. Berger et al., J. Phys. Chem. B. 108, 19912 (2004).
Y. Miyata, K. Kamon, K. Ohashi, R. Kitaura, M. Yoshimura and H. Shinohara, Appl. Phys. Lett. 96, 263105 (2010).
R. Sahin, E. Simsek and S. Akturk, Appl. Phys. Lett. 104, 053118 (2014).
Z. Yan, Z. Peng, Z. Sun, J. Yao, Y. Zhu, Z. Liu, P. M. Ajayan and J. M. Tour, ACS Nano 5, 8187 (2011).
J. S. Lee, C. W. Jang, J. H. Kim, D. H. Shin, S. Kim, S-H. Choi, K. Belay and R. G. Elliman, Carbon 66, 267 (2014).
L. Baraton, Z. He, C. S. Lee, J-L. Maurice, C. S. Cojocaru, A-F. G. Lorenzon, Y. H. Lee and D. Pribat, Nanotechnology 22, 8 (2011).
J. Chen, Y. Wen, Y. Guo, B. Wu, L. Huang, Y. Xue, D. Geng, D. Wang, G. Yu and Y. Liu, J. Am. Chem. Soc. 133, 17548 (2011).
S. J. Chae et al., RSC Adv. 5, 1343 (2015).
V. P. Pham, K. H. Kim, M. H. Jeon, S. H. Lee, K. N. Kim and G. Y. Yeom, Carbon 95, 664 (2015).
X. Li et al., Science 324, 1312 (2009).
A. Capasso, E. Placidi, H. F. Zhan, E. Perfetto, J. M. Bell, Y. T. Gu and N. Motta, Carbon 68, 330 (2014).
J. Kotakoski, A. V. Krasheninnikov, U. Kaiser and J. C. Meyer, Phys. Rev. Lett. 106, 105505 (2011).
Y-H. Zhang, Y-B. Chen, K-G. Zhou, C-H. Liu, J. Zeng, H-L. Zhang and Y. Peng, Nanotechnology 20, 18 (2009).
A. Reina, X. T. Jia, J. Ho, D. Nezich, H. B. Son, V. Bulovic, M. S. Dresselhaus and J. Kong, Nano Lett. 9, 3087 (2009).
M. Zhu, J. Wang, B. C. Holloway, R. A. Outlaw, X. Zhao, K. Hou, V. Shutthanandan and D. M. Manos, Carbon 45, 2229 (2007).
L. V. Nang and E-T. Kim, J. Elec. Soc. 159, K93 (2012).
A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M. S. Dresselhaus and J. Kong, Nano Lett. 9, 30 (2009).
N. G. Shang, P. Papakonstantinou, M. McMullan, M. Chu, A. Stamboulis, A. Potenza, S. S. Dhesi and H. Marchetto, Adv. Funct. Mater. 18, 3506 (2008).
A. Malesevic, R. Vitchev, K. Schouteden, A. Volodin, L. Zhang, G. V. Tendeloo, A. Vanhulsel and C. V. Haesendonck, Nanotechnology 19, 305604 (2008).
M. Zhu, J. Wang, B. C. Holloway, R. A. Outlaw, X. Zhao, K. Hou, V. Shutthanandan and D. M. Manos, Carbon 45, 2229 (2007).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Hwang, S.W., Shin, H., Lee, B. et al. Non-catalytic direct synthesis of graphene on Si (111) wafers by using inductively-coupled plasma chemical vapor deposition. Journal of the Korean Physical Society 69, 536–540 (2016). https://doi.org/10.3938/jkps.69.536
Received:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.69.536