Anisotropic Properties of GaN Studied by Raman Scattering

H.C. Lin; Zhe Chuan Feng; Ming Song Chen; Ze Xiang Shen; Wei Jie Lu; W.E. Collins

doi:10.4028/www.scientific.net/MSF.527-529.1517

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Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates
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Anisotropic Properties of GaN Studied by Raman Scattering
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Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates
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Asymmetric Interface Densities on n and p Type GaN MOS Capacitors
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Anisotropic Properties of GaN Studied by Raman...

Anisotropic Properties of GaN Studied by Raman Scattering

Abstract:

The phonon anisotropy property of the GaN wurtzite crystal is studied using angular dependent Raman spectroscopy both theoretically and experimentally. The polarized Raman scattering spectra were recorded from cross-sections of c-axis oriented GaN films as a function of the angle between the incident laser polarization direction and the film normal direction in three different configurations. The Raman intensity of A1(TO) showed a sinusoidal dependence on the rotating angle, as also did the E1(TO) mode, while the E2 mode has a quite different behavior. The theoretical fit takes into account the susceptibility contribution and the phase differential of different vibrating elements.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1517-1520

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1517

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Online since:

October 2006

Authors:

H.C. Lin, Zhe Chuan Feng, Ming Song Chen, Ze Xiang Shen, Wei Jie Lu, W.E. Collins

Keywords:

Anisotropy, Gallium Nitride (GaN), Optical Phonons, Raman Scattering

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