Abstract
We report here methods of surface modification and device construction which consistently result in lab-scale pentacene-based TFTs with mobilities at or above 5 cm2/Vs. Surface modifications include polymeric ultrathin films presenting a passivated interface on which the semiconductor can grow. High performance TFTs have been fabricated on a variety of dielectric materials, both organic and inorganic, and are currently being implemented in manufacturable constructions. Our surface modifications have also proven useful for substituted pentacene materials and for a variety of other organic semiconductors. In addition, we report an all organic active layer, rf-powered integrated circuit. Further experiments and statistical analyses are underway to explain the elevated mobility in our samples, and efforts have been made to confirm these results through collaboration.
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Kelley, T.W., Muyres, D.V., Baude, P.F. et al. High Performance Organic Thin Film Transistors. MRS Online Proceedings Library 771, 65 (2003). https://doi.org/10.1557/PROC-771-L6.5
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DOI: https://doi.org/10.1557/PROC-771-L6.5