Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide
p.967
p.967
Passivation of the Oxide/4H-SiC Interface
p.973
p.973
Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities
p.977
p.977
High-Current, NO-Annealed Lateral 4H-SiC MOSFETs
p.981
p.981
N2O Processing Improves the 4H-SiC:SiO2 Interface
p.985
p.985
Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature Oxidation
p.989
p.989
Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing
p.993
p.993
Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment
p.997
p.997
New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures
p.1001
p.1001
N2O Processing Improves the 4H-SiC:SiO2 Interface
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
985-988
Citation:
Online since:
April 2002
Authors:
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