Source Resistance Analysis of SiC-MESFET
p.711
p.711
Design and Implementation of RESURF MOSFETs in 4H-SiC
p.715
p.715
Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications
p.719
p.719
SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices
p.723
p.723
Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
p.727
p.727
Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC
p.731
p.731
Silicon Carbide Zener Diodes
p.735
p.735
Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors
p.739
p.739
Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor
p.743
p.743
Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
727-730
Citation:
Online since:
January 2001
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