Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE
p.1141
p.1141
Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers
p.1145
p.1145
Optical Properties of GaN Films Grown on SiC/Si
p.1149
p.1149
Modeling of the Incorporation of Aluminium in Ga1-xAlxM (M=As or N) Alloys Grown by MOCVD
p.1153
p.1153
MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells
p.1157
p.1157
MBE Growth of III-V Nitride Thin Films and Quantum Well Structures
p.1161
p.1161
Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN Epilayers
p.1167
p.1167
An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
p.1173
p.1173
Elaboration of III-V Nitrides Quantum Dots in Molecular Beam Epitaxy
p.1177
p.1177
MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
1157-1160
Citation:
Online since:
February 1998
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