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exaly
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top-articles
Electronics
University of Michigan
585
(top 1%)
papers
19.0K
(top 1%)
citations
70
(top 1%)
h
-index
116
(top 1%)
g
-index
756
all documents
20.6K
doc citations
1.8K
citing journals
Top Articles
#
Title
Journal
Year
Citations
1
Quasiperiodic GaAs-AlAs Heterostructures
Physical Review Letters
1985
799
2
Human Discrimination of Auditory Duration
Journal of the Acoustical Society of America
1962
486
3
Biochemical sensors based on polymer microrings with sharp asymmetrical resonance
Applied Physics Letters
2003
459
4
Digital circuit applications of resonant tunneling devices
Proceedings of the IEEE
1998
381
5
Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation
Physical Review Letters
2001
341
6
Fabrication of Size-Controllable Nanofluidic Channels by Nanoimprinting and Its Application for DNA Stretching
Nano Letters
2004
286
7
A high-yield IC-compatible multichannel recording array
IEEE Transactions on Electron Devices
1985
270
8
An implantable multielectrode array with on-chip signal processing
IEEE Journal of Solid-State Circuits
1986
265
9
Resonant tunneling diodes: models and properties
Proceedings of the IEEE
1998
262
10
Evaluation of the fundamental properties of quantum dot infrared detectors
Journal of Applied Physics
2002
249
11
The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
Applied Physics Letters
2004
235
12
Far-infrared photoconductivity in self-organized InAs quantum dots
Applied Physics Letters
1998
230
13
Rapid carrier relaxation inIn0.4Ga0.6As/GaAsquantum dots characterized by differential transmission spectroscopy
Physical Review B
1998
224
14
QUANTUM DOT OPTO-ELECTRONIC DEVICES
Annual Review of Materials Research
2004
224
15
Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers
Electronics Letters
1996
213
16
Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
Applied Physics Letters
2005
198
17
Spin-polarized light-emitting diodes and lasers
Journal Physics D: Applied Physics
2007
191
18
Theoretical and Experimental Analysis of a Waveguide Mounting Structure
IEEE Transactions on Microwave Theory and Techniques
1971
181
19
Electrical Spin Injection and Threshold Reduction in a Semiconductor Laser
Physical Review Letters
2007
180
20
Photonic Color Filters Integrated with Organic Solar Cells for Energy Harvesting
ACS Nano
2011
168
21
Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector
IEEE Journal of Quantum Electronics
2001
167
22
High-Temperature Operation of InAs–GaAs Quantum-Dot Infrared Photodetectors With Large Responsivity and Detectivity
IEEE Photonics Technology Letters
2004
155
23
Polymer microring resonators fabricated by nanoimprint technique
Journal of Vacuum Science & Technology an Official Journal of the American Vacuum Society B, Microelectronics Processing and Phenomena
2002
153
24
Charge Transport Parameters of the Pentathienoacene Crystal
Journal of the American Chemical Society
2007
153
25
High-speed 1.3μm tunnel injection quantum-dot lasers
Applied Physics Letters
2005
149
26
Absorption, carrier lifetime, and gain in inas~gaas quantum-dot infrared photodetectors
IEEE Journal of Quantum Electronics
2003
146
27
Effective Scheduling of Reconfigurable Microgrids With Dynamic Thermal Line Rating
IEEE Transactions on Industrial Electronics
2019
144
28
Large‐signal time‐domain modeling of low‐pressure rf glow discharges
Journal of Applied Physics
1987
138
29
Scaling limits in batch-fabricated silicon pressure sensors
IEEE Transactions on Electron Devices
1987
137
30
Nanoimprinting over topography and multilayer three-dimensional printing
Journal of Vacuum Science & Technology an Official Journal of the American Vacuum Society B, Microelectronics Processing and Phenomena
2002
135
31
High-performance mid-infrared quantum dot infrared photodetectors
Journal Physics D: Applied Physics
2005
132
32
Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes
Applied Physics Letters
2009
132
33
LANA: a lane extraction algorithm that uses frequency domain features
IEEE Transactions on Automation Science and Engineering
1999
131
34
A demonstration of ocean acoustic tomography
Nature
1982
129
35
Channel capacity in bits per joule
IEEE Journal of Oceanic Engineering
1986
123
36
High performance organic polymer light-emitting heterostructure devices
Applied Physics Letters
1999
123
37
Nanoimprint Lithography Based Approach for the Fabrication of Large‐Area, Uniformly‐Oriented Plasmonic Arrays
Advanced Materials
2008
122
38
High-Performance $\hbox{In}_{0.5}\hbox{Ga}_{0.5} \hbox{As/GaAs}$ Quantum-Dot Lasers on Silicon With Multiple-Layer Quantum-Dot Dislocation Filters
IEEE Transactions on Electron Devices
2007
120
39
Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature
Applied Physics Letters
2002
118
40
Bilayer metal wire-grid polarizer fabricated by roll-to-roll nanoimprint lithography on flexible plastic substrate
Journal of Vacuum Science & Technology B
2007
111
41
Biological Lasers for Biomedical Applications
Advanced Optical Materials
2019
110
42
Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
Journal of Applied Physics
2000
109
43
More on the Detection of One of M Orthogonal Signals
Journal of the Acoustical Society of America
1967
105
44
Quantum-Dot Optoelectronic Devices
Proceedings of the IEEE
2007
104
45
Tunneling injection lasers: a new class of lasers with reduced hot carrier effects
IEEE Journal of Quantum Electronics
1996
100
46
Raman Coherence Beats from Entangled Polarization Eigenstates in InAs Quantum Dots
Physical Review Letters
2002
99
47
Effects of nanoimprinted patterns in tissue-culture polystyrene on cell behavior
Journal of Vacuum Science & Technology an Official Journal of the American Vacuum Society B, Microelectronics Processing and Phenomena
2005
98
48
Deep levels and a possible d-x-like center in molecular beam epitaxial inxal1−xas
Journal of Electronic Materials
1987
95
49
Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above
IEEE Transactions on Microwave Theory and Techniques
2000
94
50
Improved a-Si:H TFT pixel electrode circuits for active-matrix organic light emitting displays
IEEE Transactions on Electron Devices
2001
93
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