18
Articles
2.2K
Citations
7.7
avg. Impact Factor
14
h-index
Most Cited Articles of China International Center for Materials Physics in 2015
Title | Journal | Year | Citations |
---|---|---|---|
NANOELECTRONICS. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface | Science | 2015 | 811 |
Determination of band alignment in the single-layer MoS2/WSe2 heterojunction | Nature Communications | 2015 | 421 |
Bandgap tunability at single-layer molybdenum disulphide grain boundaries | Nature Communications | 2015 | 291 |