Citation of paper, Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS 2 field-effect transistors

Authors Citing This Paper

AuthorCiting PapersAuthor's PapersAuthor's CitationsAuthor's IF
Young Hee Lee429421,65311
Kenji Watanabe2149692,94313.3
20
Zhong-Ming Wei21726,2008.4
Xidong Duan2847,89423.8
Thanh Luan Phan2141986.8
20
Xiaowei Wang1153949.6
Mario Lanza11514,4616.6
Max C Lemme12148,0714.8
Manh-Ha Doan1173987.1
Yury Yu Illarionov1388996.8
Xin Zhang11453212.2
Chuong V Nguyen11543,0866.7
Tuan V Vu11802,9346.1
Stefan De Gendt1538923.1
Yewu Wang1431,4395.3
10
Ping-An Hu11236,74510.7
Xiaosheng Fang117017,15321.5
Aanlian Pan133014,2519.2
Young-min Kim11493,8355.2
Lu You1903,9877.5
Bin Amin1752,0597.1
10
Xiao Zou1194632.4
Kun Yang111451.4
Thomas Mueller19814,08316.4
Jian Tang1391,09910.8
10
Sihan Chen161013.9
Kosuke Nagashio11954,1932.7
Ki Kang Kim19812,19813.1
James H Edgar12625,7743.6
Lianjie Xue1143664.7
N Ravishankar11434,3752.8
Kookjin Lee113502.4
Ahin Roy1353293.2
Gyeongtak Han11125210.8
Yuhang Wang1152082.5
Xiangming Xu1233517
Woo Jong Yu1543,59210.6
Seongin Hong1313254.7
Hattan Abuzaid14434.1
Hyun Seok Lee1226496.9
Zongwen Liu11678,7537.6
De-Hui Li1864,82911.5
Tanweer Ahmed1121313.7
Thomas Nuytten12163
SunPhil Kim1101214.6