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Japanese Journal of Applied Physics
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Top Articles
Japanese Journal of Applied Physics
Physics
,
Applied Physics
1.4
(top 12%)
Impact Factor
1.5
(top 12%)
extended IF
210
(top 1%)
H-Index
8K
authors
68.6K
papers
889K
citations
5.8K
citing journals
114.5K
citing authors
Most Cited Articles of Japanese Journal of Applied Physics
Title
Year
Citations
A New High-TcOxide Superconductor without a Rare Earth Element
1988
3.2K
TiO2Photocatalysis: A Historical Overview and Future Prospects
2005
2.5K
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
1996
2.1K
(Bi1/2Na1/2)TiO3-BaTiO3System for Lead-Free Piezoelectric Ceramics
1991
1.8K
Dye-Sensitized Solar Cells with Conversion Efficiency of 11.1%
2006
1.6K
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
1989
1.5K
The Piezoelectricity of Poly (vinylidene Fluoride)
1969
1.4K
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
1995
1.3K
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
1996
1.2K
GaN Growth Using GaN Buffer Layer
1991
1.1K
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
1997
1K
Material Design for Transparent Ferromagnets with ZnO-Based Magnetic Semiconductors
2000
990
Surface-Induced Parallel Alignment of Liquid Crystals by Linearly Polymerized Photopolymers
1992
935
Nonohmic Properties of Zinc Oxide Ceramics
1971
926
Thermal Annealing Effects on P-Type Mg-Doped GaN Films
1992
899
Dielectric and Piezoelectric Properties of 0.91Pb(Zn1/3Nb2/3)O3-0.09PbTiO3Single Crystals
1982
856
Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
1980
851
Fabrication of Gold Nanodot Array Using Anodic Porous Alumina as an Evaporation Mask
1996
845
Base-Metal Electrode-Multilayer Ceramic Capacitors: Past, Present and Future Perspectives
2003
844
Hole Compensation Mechanism of P-Type GaN Films
1992
826
Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films
1988
811
Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
1997
797
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
1995
780
Dielectric and Piezoelectric Properties of (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3Systems
1999
754
High-TcPhase Promoted and Stabilized in the Bi, Pb-Sr-Ca-Cu-O System
1988
734
0
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How are inpact factors calculated?
The impact factor (IF) is calculated by counting citations from peer-reviewed journals only.
extended IF
also counts citations from books and conference papers. However, no patent, abstract, working papers, online documents, etc., are covered.
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