1.3K(top 11%)
articles
13.7K(top 14%)
citations
200(top 12%)
★★ articles
5(top 12%)
★★★ articles
2.2(top 27%)
Avg IF
45(top 17%)
H-Index
79(top 16%)
G-Index
224
journals

Most Cited Articles of TSMC in 2001

TitleJournalYearCitations
Pi-Gate SOI MOSFETIEEE Electron Device Letters2001168
An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scalingIEEE Electron Device Letters2001103
Interface induced uphill diffusion of boron: an effective approach for ultrashallow junctionIEEE Electron Device Letters200141
Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETsIEEE Transactions on Electron Devices200136
Design methodologies for adaptive and multimedia networks200127
Thermal Stability of Sputtered Tungsten Carbide as Diffusion Barrier for Copper MetallizationJournal of the Electrochemical Society200126
X-Ray Reflectivity and FTIR Measurements of N[sub 2] Plasma Effects on the Density Profile of Hydrogen Silsesquioxane Thin FilmsJournal of the Electrochemical Society200126
Improving the RF performance of 0.18 μm CMOS with deep n-well implantationIEEE Electron Device Letters200124
The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 μm CMOS technology and beyondIEEE Electron Device Letters200123
Characterization of Sputtered Titanium Carbide Film as Diffusion Barrier for Copper MetallizationJournal of the Electrochemical Society200122
Physical and Electrical Characteristics of Methylsilane- and Trimethylsilane-Doped Low Dielectric Constant Chemical Vapor Deposited OxidesJournal of the Electrochemical Society200121
Physical and Electrical Characteristics of F- and C-Doped Low Dielectric Constant Chemical Vapor Deposited OxidesJournal of the Electrochemical Society200120
Sampled-data modeling and analysis of one-cycle control and charge controlIEEE Transactions on Power Electronics200120
A deep submicron CMOS process compatible suspending high-Q inductorIEEE Electron Device Letters200119
AN OBJECT-BASED DATA FLOW TESTING APPROACH FOR WEB APPLICATIONSInternational Journal of Software Engineering and Knowledge Engineering200118
RESOURCE-CONSTRAINED PROJECT MANAGEMENT USING MODIFIED THEORY OF CONSTRAINTJournal of the Chinese Institute of Industrial Engineers200118
Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusionIEEE Electron Device Letters200118
Modeling of Reverse Tone Etchback Shallow Trench Isolation Chemical Mechanical PolishingJournal of the Electrochemical Society200113
An adaptive fuzzy sliding-mode controller for servomechanism disturbance rejectionIEEE Transactions on Industrial Electronics200112
A full Cu damascene metallization process for sub-0.18 /spl mu/m RF CMOS SoC high Q inductor and MIM capacitor application at 2.4 GHz and 5.3 GHz200112
Characterization of polysilicon resistors in sub-0.25 μm CMOS ULSI applicationsIEEE Electron Device Letters200112
Novel Polymeric Surfactants for Improving Chemical Mechanical Polishing Performance of Silicon OxideElectrochemical and Solid-State Letters200111
Dielectric and Barrier Properties of Spin-On Organic Aromatic Low Dielectric Constant Polymers FLARE and SiLKJournal of the Electrochemical Society200111
Foundries and the dawn of an open IP eraComputer20019
Nonsilicide source/drain pixel for 0.25-μm CMOS image sensorIEEE Electron Device Letters20019