| 1 | Data‐Driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers | 9.3 | 5 | Citations (PDF) |
| 2 | High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate | 20.0 | 17 | Citations (PDF) |
| 3 | A novel bidirectionally operated chirped quantum-dot based semiconductor optical amplifier using a dual ground state spectrum | 5.5 | 4 | Citations (PDF) |
| 4 | Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon | 3.2 | 5 | Citations (PDF) |
| 5 | Indium-flush technique for C-band InAs/InP quantum dots | 4.0 | 6 | Citations (PDF) |
| 6 | From past to future: on-chip laser sources for photonic integrated circuits | 20.0 | 45 | Citations (PDF) |
| 7 | Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate | 3.2 | 2 | Citations (PDF) |
| 8 | High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon | 2.1 | 4 | Citations (PDF) |
| 9 | Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications | 3.1 | 6 | Citations (PDF) |
| 10 | Design and characterisation of multi-mode interference reflector lasers for integrated photonics | 3.1 | 11 | Citations (PDF) |
| 11 | The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates | 3.1 | 15 | Citations (PDF) |
| 12 | Room-temperature continuous-wave topological Dirac-vortex microcavity lasers on silicon | 20.0 | 33 | Citations (PDF) |
| 13 | Design of high-quality reflectors for vertical III–V nanowire lasers on Si | 2.7 | 7 | Citations (PDF) |
| 14 | Single-Mode Photonic Crystal Nanobeam Lasers Monolithically Grown on Si for Dense Integration | 4.1 | 6 | Citations (PDF) |
| 15 | Multi-wavelength 128 Gbit s<sup>−1</sup>
λ
<sup>−1</sup> PAM4 optical transmission enabled by a 100 GHz quantum dot mode-locked optical frequency comb | 3.1 | 17 | Citations (PDF) |
| 16 | Thermally-driven formation method for growing (quantum) dots on sidewalls of self-catalysed thin nanowires | 6.6 | 4 | Citations (PDF) |
| 17 | Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform | 2.0 | 24 | Citations (PDF) |
| 18 | The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers | 3.1 | 20 | Citations (PDF) |
| 19 | Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers | 3.3 | 4 | Citations (PDF) |
| 20 | Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer | 8.8 | 8 | Citations (PDF) |
| 21 | Theoretical analysis and modelling of degradation for III–V lasers on Si | 3.1 | 12 | Citations (PDF) |
| 22 | A thermally erasable silicon oxide layer for molecular beam epitaxy | 3.1 | 2 | Citations (PDF) |
| 23 | The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix | 3.1 | 5 | Citations (PDF) |
| 24 | Analysis of the regimes of feedback effects in quantum dot laser | 3.1 | 3 | Citations (PDF) |
| 25 | Refractive indices of MBE-grown AlxGa(1−<i>x</i>)As ternary alloys in the transparent wavelength region | 1.3 | 98 | Citations (PDF) |
| 26 | Multifunctional two-dimensional glassy graphene devices for vis-NIR photodetection and volatile organic compound sensing | 6.4 | 6 | Citations (PDF) |
| 27 | Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement | 8.8 | 28 | Citations (PDF) |
| 28 | Robust Protection of III–V Nanowires in Water Splitting by a Thin Compact TiO<sub>2</sub> Layer | 8.1 | 22 | Citations (PDF) |
| 29 | Co-Package Technology Platform for Low-Power and Low-Cost Data Centers | 2.6 | 19 | Citations (PDF) |
| 30 | Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates | 3.2 | 11 | Citations (PDF) |
| 31 | Influence of diameter on temperature dynamics of hot carriers in photoexcited GaAsP nanowires | 3.2 | 2 | Citations (PDF) |
| 32 | Optimizing GaAs nanowire-based visible-light photodetectors | 3.2 | 15 | Citations (PDF) |
| 33 | Modeling of Ultrafast Waveguided Electro-Absorption Modulator at Telecommunication Wavelength (λ = 1.55 μm) Based on Intersubband Transition in an InGaAs/AlAs/AlAsSb Asymmetric Coupled Double Quantum Well Lattice-Matched to InP | 2.1 | 0 | Citations (PDF) |
| 34 | Optoelectronic oscillator for 5G wireless networks and beyond | 3.1 | 28 | Citations (PDF) |
| 35 | Resonant enhancement of Raman scattering by surface phonon polaritons in GaAs nanowires | 3.1 | 4 | Citations (PDF) |
| 36 | Polarization properties of Raman scattering by surface phonon polaritons in GaAsP nanowires | 3.1 | 2 | Citations (PDF) |
| 37 | Microcavity lasers directly grown on silicon 2021, 97, STu2C.6 | | 0 | Citations (PDF) |
| 38 | All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates | 3.1 | 36 | Citations (PDF) |
| 39 | Monolithic III–V quantum dot lasers on silicon | 0.0 | 8 | Citations (PDF) |
| 40 | Various microcavity lasers monolithically grown on planar on-axis Si (001) substrates 2021, 15, 197-198 | | 0 | Citations (PDF) |
| 41 | The limits to peak modal gain in p-modulation doped indium arsenide quantum dot laser diodes 2021, , 1-2 | | 1 | Citations (PDF) |
| 42 | Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon | 4.8 | 63 | Citations (PDF) |
| 43 | Ambipolar and Robust WSe<sub>2</sub> Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides | 4.1 | 20 | Citations (PDF) |
| 44 | Checked patterned elemental distribution in AlGaAs nanowire branches <i>via</i> vapor–liquid–solid growth | 5.1 | 4 | Citations (PDF) |
| 45 | Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001) | 7.1 | 32 | Citations (PDF) |
| 46 | Theoretical Study on the Effects of Dislocations in Monolithic III-V Lasers on Silicon | 4.8 | 21 | Citations (PDF) |
| 47 | Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing | 20.0 | 40 | Citations (PDF) |
| 48 | Droplet manipulation and horizontal growth of high-quality self-catalysed GaAsP nanowires | 9.9 | 3 | Citations (PDF) |
| 49 | Introducing Huiyun Liu, Editor-in-Chief for Journal of Physics D: Applied Physics | 3.1 | 0 | Citations (PDF) |
| 50 | Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001) | 14.2 | 90 | Citations (PDF) |
| 51 | Spatially Bandgap-Graded MoS2(1−x)Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors | 30.3 | 31 | Citations (PDF) |
| 52 | Self-catalyzed GaAs(P) nanowires and their application for solar cells | 3.1 | 6 | Citations (PDF) |
| 53 | Multiple radial phosphorus segregations in GaAsP core-shell nanowires | 8.6 | 3 | Citations (PDF) |
| 54 | GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications 2020, , | | 1 | Citations (PDF) |
| 55 | Impact of ex-situ annealing on strain and composition of MBE grown GeSn | 3.1 | 9 | Citations (PDF) |
| 56 | Preferred growth direction of III–V nanowires on differently oriented Si substrates | 2.7 | 12 | Citations (PDF) |
| 57 | Carrier dynamics and recombination in silicon doped InAs/GaAs quantum dot solar cells with AlAs cap layers | 2.3 | 5 | Citations (PDF) |
| 58 | A needle in a needlestack: exploiting functional inhomogeneity for optimized nanowire lasing 2020, , 37 | | 2 | Citations (PDF) |
| 59 | Quantum dot mode-locked frequency comb with ultra-stable 25.5 GHz spacing between 20°C and 120°C | 6.9 | 24 | Citations (PDF) |
| 60 | Heteroepitaxial Growth of III-V Semiconductors on Silicon | 2.3 | 92 | Citations (PDF) |
| 61 | InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods | 3.0 | 17 | Citations (PDF) |
| 62 | GaAsP nanowires containing intentional and self-forming quantum dots 2020, , 16 | | 0 | Citations (PDF) |
| 63 | Photonic crystal lasers grown on CMOS-compatible on-axis Si(001) 2020, , | | 0 | Citations (PDF) |
| 64 | Impact of dislocations in monolithic III-V lasers on silicon: a theoretical approach 2020, , 16 | | 2 | Citations (PDF) |
| 65 | Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon | 3.2 | 5 | Citations (PDF) |
| 66 | III–V quantum dot lasers epitaxially grown on Si substrates 2019, , 17-39 | | 5 | Citations (PDF) |
| 67 | Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector With n-B-p Design Grown on GaAs Substrate | 2.1 | 18 | Citations (PDF) |
| 68 | Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector | 3.3 | 21 | Citations (PDF) |
| 69 | Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate | 3.7 | 44 | Citations (PDF) |
| 70 | Investigation into the current loss in InAs/GaAs quantum dot solar cells with Si-doped quantum dots | 3.1 | 0 | Citations (PDF) |
| 71 | Preface to the Special Topic on Compound Semiconductor Materials and Devices on Si | 3.7 | 0 | Citations (PDF) |
| 72 | Enhanced Performance of InAsP Nanowires with Ultra-thin Passivation Layer 2019, 34, 1-2 | | 0 | Citations (PDF) |
| 73 | Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission | 15.4 | 28 | Citations (PDF) |
| 74 | III–V ternary nanowires on Si substrates: growth, characterization and device applications | 3.7 | 32 | Citations (PDF) |
| 75 | Dynamics of Quantum Dot Lasers on Silicon 2019, , 1-2 | | 0 | Citations (PDF) |
| 76 | InAs/GaAs quantum dot solar cells with quantum dots in the base region | 1.4 | 11 | Citations (PDF) |
| 77 | Stabilization of GaAs photoanodes by <i>in situ</i> deposition of nickel-borate surface catalysts as hole trapping sites | 4.0 | 18 | Citations (PDF) |
| 78 | Toward electrically driven semiconductor nanowire lasers | 2.7 | 32 | Citations (PDF) |
| 79 | Integration of III-V lasers on Si for Si photonics | 10.5 | 129 | Citations (PDF) |
| 80 | Selective area intermixing of III–V quantum-dot lasers grown on silicon with two wavelength lasing emissions | 2.3 | 5 | Citations (PDF) |
| 81 | Self-Formed Quantum Wires and Dots in GaAsP–GaAsP Core–Shell Nanowires | 8.8 | 16 | Citations (PDF) |
| 82 | Defect Dynamics in Self-Catalyzed III–V Semiconductor Nanowires | 8.8 | 7 | Citations (PDF) |
| 83 | Highly Strained III–V–V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement | 15.4 | 23 | Citations (PDF) |
| 84 | Degradation of III–V Quantum Dot Lasers Grown Directly on Silicon Substrates | 4.1 | 15 | Citations (PDF) |
| 85 | A metallic hot-carrier photovoltaic device | 2.3 | 10 | Citations (PDF) |
| 86 | MoS<sub>2</sub>–OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS<sub>2</sub> on Arbitrary Substrates | 15.7 | 109 | Citations (PDF) |
| 87 | Heteroepitaxy of GaP on silicon for efficient and cost-effective photoelectrochemical water splitting | 9.3 | 23 | Citations (PDF) |
| 88 | O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by <b>
<i>in-situ</i>
</b> hybrid epitaxy | 1.3 | 17 | Citations (PDF) |
| 89 | Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics | 2.3 | 75 | Citations (PDF) |
| 90 | Enhanced performance of ZnO nanoparticle decorated all-inorganic CsPbBr<sub>3</sub> quantum dot photodetectors | 9.3 | 82 | Citations (PDF) |
| 91 | Thin Ge buffer layer on silicon for integration of III-V on silicon | 2.0 | 26 | Citations (PDF) |
| 92 | Multi-wavelength DFB laser array in InAs/GaAs quantum dot material epitaxially grown on Silicon 2019, , 1-1 | | 0 | Citations (PDF) |
| 93 | Growth and Fabrication of High‐Quality Single Nanowire Devices with Radial p‐i‐n Junctions | 11.5 | 16 | Citations (PDF) |
| 94 | O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate | 2.0 | 36 | Citations (PDF) |
| 95 | Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants | 2.1 | 5 | Citations (PDF) |
| 96 | Understanding the Bandwidth Limitations in Monolithic 1.3 <i>μ</i>m InAs/GaAs Quantum Dot Lasers on Silicon | 4.8 | 15 | Citations (PDF) |
| 97 | Optically-pumped InAs/GaAs quantum-dot microdisk lasers monolithically grown on on-axis Si (001) substrate 2019, , 7 | | 1 | Citations (PDF) |
| 98 | Gallium Phosphide photoanode coated with TiO<sub>2</sub> and CoO<sub>x</sub> for stable photoelectrochemical water oxidation | 3.3 | 23 | Citations (PDF) |
| 99 | High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy | 3.3 | 18 | Citations (PDF) |
| 100 | Roadmap of 1300-nm InAs/GaAs quantum dot laser grown on silicon for silicon photonics 2019, , OTh1C.1 | | 12 | Citations (PDF) |
| 101 | III-V Quantum Dot Lasers Monolithically Grown on Silicon 2019, 41, W4E.1 | | 3 | Citations (PDF) |
| 102 | Ultra-low threshold InAs/GaAs quantum dot microdisk lasers on planar on-axis Si (001) substrates | 8.6 | 44 | Citations (PDF) |
| 103 | Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures | 3.7 | 6 | Citations (PDF) |
| 104 | Boosting photocurrent of GaInP top-cell for current-matched III–V monolithic multiple-junction solar cells via plasmonic decahedral-shaped Au nanoparticles | 6.7 | 9 | Citations (PDF) |
| 105 | Stable Defects in Semiconductor Nanowires | 8.8 | 20 | Citations (PDF) |
| 106 | High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire | 11.5 | 73 | Citations (PDF) |
| 107 | An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs $_{1-x}$ Sb $_{x}$ Quantum Dot Solar Cells | 2.8 | 3 | Citations (PDF) |
| 108 | Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off | 6.2 | 24 | Citations (PDF) |
| 109 | High Detectivity and Transparent Few‐Layer MoS<sub>2</sub>/Glassy‐Graphene Heterostructure Photodetectors | 24.4 | 130 | Citations (PDF) |
| 110 | Elevated temperature lasing from injection microdisk lasers on silicon | 1.5 | 20 | Citations (PDF) |
| 111 | Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates | 1.4 | 20 | Citations (PDF) |
| 112 | Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer | 2.8 | 28 | Citations (PDF) |
| 113 | Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate | 4.8 | 38 | Citations (PDF) |
| 114 | Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate | 3.3 | 9 | Citations (PDF) |
| 115 | Doping of Self-Catalyzed Nanowires under the Influence of Droplets | 8.8 | 26 | Citations (PDF) |
| 116 | Bright prospect of using alcohol-soluble Nb2O5 as anode buffer layer for efficient polymer solar cells based on fullerene and non-fullerene acceptors | 2.6 | 15 | Citations (PDF) |
| 117 | Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate 2018, , 1-3 | | 0 | Citations (PDF) |
| 118 | InAs/GaAs Quantum Dot Lasers Monolithically Integrated on Group IV Platform 2018, , 23.5.1-23.5.4 | | 2 | Citations (PDF) |
| 119 | Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon 2018, , | | 0 | Citations (PDF) |
| 120 | Increasing Maximum Gain in InAs Quantum Dot Lasers on GaAs and Si 2018, , 1-2 | | 0 | Citations (PDF) |
| 121 | The influence of direct, delta, and modulation QD Si doping on InAs/GaAs quantum dot solar cells 2018, , 2759-2762 | | 1 | Citations (PDF) |
| 122 | Optimization of 1.3 <i>µ</i>m InAs/GaAs quantum dot lasers epitaxially grown on silicon: taking the optical loss of metamorphic epilayers into account | 1.1 | 9 | Citations (PDF) |
| 123 | III–V quantum-dot lasers monolithically grown on silicon | 2.3 | 39 | Citations (PDF) |
| 124 | InGaN/GaN Multiple Quantum Well Photoanode Modified with Cobalt Oxide for Water Oxidation | 5.4 | 29 | Citations (PDF) |
| 125 | Revealing silicon crystal defects by conductive atomic force microscope | 3.2 | 14 | Citations (PDF) |
| 126 | Hybrid III–V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores | 8.8 | 9 | Citations (PDF) |
| 127 | Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon | 4.8 | 21 | Citations (PDF) |
| 128 | Epitaxial Growth of Few‐Layer Black Phosphorene Quantum Dots on Si Substrates | 4.1 | 29 | Citations (PDF) |
| 129 | Quantum Dot Quantum Cascade Detector on Si Substrate 2018, , STh4I.5 | | 0 | Citations (PDF) |
| 130 | GaSb and GaSb/AlSb Superlattice Buffer Layers
for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates | 2.4 | 4 | Citations (PDF) |
| 131 | TiO2 nanofiber photoelectrochemical cells loaded with sub-12 nm AuNPs: Size dependent performance evaluation | 5.3 | 28 | Citations (PDF) |
| 132 | 13 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers | 6.9 | 23 | Citations (PDF) |
| 133 | Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate | 4.8 | 31 | Citations (PDF) |
| 134 | Monolithic quantum-dot distributed feedback laser array on silicon | 8.6 | 106 | Citations (PDF) |
| 135 | Theoretical Analysis of a Microring Resonator Array with High Sensitivity and Large Dynamic Range Based on a Multi-Scale Technique | 4.0 | 2 | Citations (PDF) |
| 136 | Two-colour In<sub>0.5</sub>Ga<sub>0.5</sub>As quantum dot infrared photodetectors on silicon | 2.3 | 22 | Citations (PDF) |
| 137 | Light-Emitting GaAs Nanowires on a Flexible Substrate | 8.8 | 32 | Citations (PDF) |
| 138 | Low-noise 13 μm InAs/GaAs quantum dot laser monolithically grown on silicon | 6.9 | 46 | Citations (PDF) |
| 139 | Silicon-based III-V Quantum Dot Materials and Dsevices 2018, 5, Th1J.2 | | 0 | Citations (PDF) |
| 140 | Monolithic Integration of 1.3 µm III-V Quantum-Dot Lasers on Si for Si Photonics 2018, , SW4I.1 | | 0 | Citations (PDF) |
| 141 | O-band InAs Quantum Dot Light Sources Monolithically Grown on Si 2018, 41, W1F.2 | | 0 | Citations (PDF) |
| 142 | Resonant scattering probes for terahertz near-field microscopy 2018, , 72 | | 0 | Citations (PDF) |
| 143 | Dark Current Analysis of Mid-Wave Quantum Dots-in-a-Well Photodetectors Monolithically Grown on Silicon Substrate 2018, , 1-2 | | 0 | Citations (PDF) |
| 144 | Integrating Sphere Microscopy for Direct Absorption Measurements of Single Nanostructures | 15.4 | 37 | Citations (PDF) |
| 145 | Integrating III-V quantum dot lasers on silicon substrates for silicon photonics | 1.0 | 0 | Citations (PDF) |
| 146 | Influence of droplet size on the growth of high-quality self-catalyzed GaAsP nanowires | 1.0 | 0 | Citations (PDF) |
| 147 | GaAsP nanowires and nanowire devices grown on silicon substrates | 1.0 | 3 | Citations (PDF) |
| 148 | 2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique | 3.3 | 16 | Citations (PDF) |
| 149 | Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon | 4.1 | 29 | Citations (PDF) |
| 150 | Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band | 7.0 | 13 | Citations (PDF) |
| 151 | Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer | 8.8 | 20 | Citations (PDF) |
| 152 | Nonradiative Step Facets in Semiconductor Nanowires | 8.8 | 19 | Citations (PDF) |
| 153 | Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers | 1.0 | 0 | Citations (PDF) |
| 154 | Influence of built-in charge on photogeneration and recombination processes in InAs/GaAs quantum dot solar cells | 3.1 | 5 | Citations (PDF) |
| 155 | InGaAs and GaAs quantum dot solar cells grown by droplet epitaxy | 6.2 | 42 | Citations (PDF) |
| 156 | Site-controlled fabrication of silicon nanotips by indentation-induced selective etching | 6.6 | 12 | Citations (PDF) |
| 157 | Impact of the growth temperature on the performance of 1.70-eV Al0.22Ga0.78As solar cells grown by MBE | 2.0 | 3 | Citations (PDF) |
| 158 | Growth of Pure Zinc-Blende GaAs(P) Core–Shell Nanowires with Highly Regular Morphology | 8.8 | 23 | Citations (PDF) |
| 159 | Novel Concepts for High-Efficiency Lightweight Space Solar Cells | 0.6 | 10 | Citations (PDF) |
| 160 | Sub-monolayer quantum dot quantum cascade mid-infrared photodetector | 3.2 | 30 | Citations (PDF) |
| 161 | Si-Doped InAs/GaAs Quantum Dot Solar Cell with Alas Cap Layers | 0.6 | 2 | Citations (PDF) |
| 162 | III-IV quantum dot lasers epitaxially grown on Si 2017, 40, 1-2 | | 2 | Citations (PDF) |
| 163 | Resonant scattering probes in the terahertz range 2017, , 1-3 | | 0 | Citations (PDF) |
| 164 | Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates | 3.3 | 117 | Citations (PDF) |
| 165 | Resonant terahertz probes for near-field scattering microscopy | 3.3 | 17 | Citations (PDF) |
| 166 | Monolithic Integration of III-V Quantum Dot Lasers on Silicon for Silicon Photonics 2017, , Su1K.4 | | 0 | Citations (PDF) |
| 167 | High-performance InAs/GaAs quantum-dot laser didoes monolithically grown on silicon for silicon photonics 2017, , 1-1 | | 0 | Citations (PDF) |
| 168 | Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 13 μm | 3.2 | 44 | Citations (PDF) |
| 169 | MBE growth of 1.7eV Al0.2Ga0.8As and 1.42eV GaAs solar cells on Si using dislocations filters: an alternative pathway toward III-V/ Si solar cells architectures 2017, 9743, 3370-3375 | | 1 | Citations (PDF) |
| 170 | Ultra-smooth glassy graphene thin films for flexible transparent circuits | 11.5 | 71 | Citations (PDF) |
| 171 | Long lifetime quantum-dot laser monolithically grown on silicon 2016, 19, 147-148 | | 1 | Citations (PDF) |
| 172 | Bias-free and compact mode-matched excitation of THz coaxial waveguides 2016, , 1-2 | | 2 | Citations (PDF) |
| 173 | Generation of radially-polarized terahertz pulses for coupling into coaxial waveguides | 3.7 | 17 | Citations (PDF) |
| 174 | Humidity effects on tribochemical removal of GaAs surfaces | 2.2 | 16 | Citations (PDF) |
| 175 | Deep-etched III-V lasers grown directly on silicon substrates 2016, , 536-537 | | 0 | Citations (PDF) |
| 176 | 1.7eV Al<sub>0.2</sub>Ga<sub>0.8</sub>As solar cells epitaxially grown on silicon by SSMBE using a superlattice and dislocation filters | 1.0 | 5 | Citations (PDF) |
| 177 | Optoelectronic characterization of carrier extraction in a hot carrier photovoltaic cell structure | 2.8 | 15 | Citations (PDF) |
| 178 | Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications | 1.0 | 0 | Citations (PDF) |
| 179 | Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates | 4.1 | 73 | Citations (PDF) |
| 180 | Metamorphic III–V semiconductor lasers grown on silicon | 4.4 | 52 | Citations (PDF) |
| 181 | Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates | 7.0 | 75 | Citations (PDF) |
| 182 | Growth of high-quality self-catalyzed core-shell GaAsP nanowires on Si substrates | 1.0 | 0 | Citations (PDF) |
| 183 | Al0.2Ga0.8As Solar Cells Monolithically Grown on Si and GaAs by MBE for III-V/Si Tandem Dual-junction Applications | 1.8 | 10 | Citations (PDF) |
| 184 | Effect of interface oxides on shear properties of hot-rolled stainless steel clad plate | 6.2 | 107 | Citations (PDF) |
| 185 | Modelling and measurement of the absolute level of power radiated by antenna integrated THz UTC photodiodes | 3.3 | 29 | Citations (PDF) |
| 186 | Silicon-based III-V quantum dot devices for silicon photonics 2016, , 118-119 | | 0 | Citations (PDF) |
| 187 | Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates | 4.1 | 4 | Citations (PDF) |
| 188 | InAs/GaAs quantum-dot light emitters monolithically grown on Si substrate | 1.0 | 0 | Citations (PDF) |
| 189 | Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers | 2.8 | 18 | Citations (PDF) |
| 190 | Simulation study of GaAsP/Si tandem cells including the impact of threading dislocations on the luminescent coupling between the cells | 1.0 | 0 | Citations (PDF) |
| 191 | Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate | 8.8 | 44 | Citations (PDF) |
| 192 | Simulation study of GaAsP/Si tandem solar cells | 6.2 | 30 | Citations (PDF) |
| 193 | Orthogonal enhanced linear discriminant analysis for face recognition | 2.0 | 2 | Citations (PDF) |
| 194 | In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates | 3.3 | 26 | Citations (PDF) |
| 195 | Accurate equivalent circuit model for millimetre-wave UTC photodiodes | 3.3 | 38 | Citations (PDF) |
| 196 | Electrically pumped continuous-wave III–V quantum dot lasers on silicon | 30.7 | 786 | Citations (PDF) |
| 197 | Characterization of 6.1 Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy | 2.0 | 14 | Citations (PDF) |
| 198 | Influence of Droplet Size on the Growth of Self-Catalyzed Ternary GaAsP Nanowires | 8.8 | 56 | Citations (PDF) |
| 199 | Investigation of InAs/GaAs 1−x Sb x quantum dots for applications in intermediate band solar cells | 6.2 | 24 | Citations (PDF) |
| 200 | InAs/InGaP quantum dot solar cells with an AlGaAs interlayer | 6.2 | 22 | Citations (PDF) |
| 201 | InAs/GaAs quantum dot lasers monolithically grown on silicon for silicon photonics 2016, 5, ITu3A.2 | | 0 | Citations (PDF) |
| 202 | Silicon-based III-V quantum-dot lasers for silicon photonics 2016, 5, ATh2F.1 | | 0 | Citations (PDF) |
| 203 | Optimisation of 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates | 0.4 | 1 | Citations (PDF) |
| 204 | Dislocation filters in GaAs on Si | 2.3 | 45 | Citations (PDF) |
| 205 | Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate | 1.9 | 10 | Citations (PDF) |
| 206 | Optimisation of the dislocation filter layers in 1.3‐μm InAs/GaAs quantum‐dot lasers monolithically grown on Si substrates | 1.4 | 23 | Citations (PDF) |
| 207 | Development of Indium Phosphide MEMS for tunable optical buffering 2015, , 1-4 | | 0 | Citations (PDF) |
| 208 | Design and fabrication of indium phosphide air-bridge waveguides with MEMS functionality | 1.0 | 0 | Citations (PDF) |
| 209 | Microwave Photonics: Present Status and Future Outlook (Plenary Paper) 2015, , 1-6 | | 2 | Citations (PDF) |
| 210 | Continuous-wave emission of III–V quantum dot lasers grown directly on Si substrates 2015, , 595-596 | | 0 | Citations (PDF) |
| 211 | Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy | 8.8 | 59 | Citations (PDF) |
| 212 | Wide-Bandgap InAs/InGaP Quantum-Dot Intermediate Band Solar Cells | 2.8 | 57 | Citations (PDF) |
| 213 | Tunable optical buffer based on III-V MEMS design 2015, , | | 0 | Citations (PDF) |
| 214 | Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells | 1.4 | 17 | Citations (PDF) |
| 215 | Polarity-Driven Quasi-3-Fold Composition Symmetry of Self-Catalyzed III–V–V Ternary Core–Shell Nanowires | 8.8 | 41 | Citations (PDF) |
| 216 | Optical characterisation of catalyst free GaAsP and GaAsP core-shell nanowires grown directly on Si substrates by MBE | 1.0 | 0 | Citations (PDF) |
| 217 | Design and Fabrication of Suspended Indium Phosphide Waveguides for MEMS-Actuated Optical Buffering | 4.1 | 7 | Citations (PDF) |
| 218 | Efficiency of GaInAs thermophotovoltaic cells: the effects of incident radiation, light trapping and recombinations | 3.3 | 18 | Citations (PDF) |
| 219 | III–V nanowires and nanowire optoelectronic devices | 3.1 | 153 | Citations (PDF) |
| 220 | Quantum dot optoelectronic devices: lasers, photodetectors and solar cells | 3.1 | 194 | Citations (PDF) |
| 221 | Quantum dot lasers on silicon substrate for silicon photonic integration and their prospect | 0.6 | 9 | Citations (PDF) |
| 222 | Quantum Dot Lasers on Silicon by Direct Epitaxial Growth 2015, 4, FTh4B.3 | | 0 | Citations (PDF) |
| 223 | Electrically Pumped 1.3-µm InAs/GaAs Quantum Dot Laser Monolithically Grown on Si Substrate Lasing up to 111°C 2015, 19, SW3F.1 | | 1 | Citations (PDF) |
| 224 | InAs/GaAsSb quantum dot solar cells | 3.3 | 50 | Citations (PDF) |
| 225 | 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers | 3.3 | 135 | Citations (PDF) |
| 226 | InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate | 3.3 | 14 | Citations (PDF) |
| 227 | Bandgap optimized III&#x2013;V (GaAsP) nanowire on silicon tandem solar cell, device and data 2014, , 1041-1044 | | 5 | Citations (PDF) |
| 228 | Design and fabrication of InP free-standing optical waveguides for MEMS 2014, , 181-182 | | 1 | Citations (PDF) |
| 229 | Submonolayer InGaAs/GaAs quantum dot solar cells | 6.2 | 50 | Citations (PDF) |
| 230 | Voltage recovery in charged InAs/GaAs quantum dot solar cells | 16.4 | 65 | Citations (PDF) |
| 231 | Electrically pumped continuous‐wave 1.3‐µm InAs/GaAs quantum dot lasers monolithically grown on Si substrates | 1.4 | 19 | Citations (PDF) |
| 232 | InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate | 7.0 | 72 | Citations (PDF) |
| 233 | Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon | 8.8 | 87 | Citations (PDF) |
| 234 | Wafer-Scale Fabrication of Self-Catalyzed 1.7 eV GaAsP Core–Shell Nanowire Photocathode on Silicon Substrates | 8.8 | 67 | Citations (PDF) |
| 235 | Self-Catalyzed Ternary Core–Shell GaAsP Nanowire Arrays Grown on Patterned Si Substrates by Molecular Beam Epitaxy | 8.8 | 51 | Citations (PDF) |
| 236 | Self-Catalyzed GaAsP Nanowires Grown on Silicon Substrates by Solid-Source Molecular Beam Epitaxy | 8.8 | 82 | Citations (PDF) |
| 237 | Evaluation of InAs quantum dots on Si as optical modulator | 2.3 | 5 | Citations (PDF) |
| 238 | Long-wavelength III-V quantum-dot lasers monolithically grown on Si substrates 2013, , 333-335 | | 1 | Citations (PDF) |
| 239 | Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon | 14.2 | 200 | Citations (PDF) |
| 240 | Semiconductor III–V lasers monolithically grown on Si substrates | 2.3 | 24 | Citations (PDF) |
| 241 | InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates | 4.1 | 101 | Citations (PDF) |
| 242 | GaAsP single nanowire solar cells grown on silicon exhibiting large Voc increase at multiple suns 2013, , | | 1 | Citations (PDF) |
| 243 | InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics 2013, , 474-475 | | 2 | Citations (PDF) |
| 244 | III–V Quantum-Dot Materials and Devices Monolithically Grown on Si Substrates | 0.0 | 2 | Citations (PDF) |
| 245 | III–V quantum-dot laser growth on silicon and germanium 2013, 4, OM3K.1 | | 0 | Citations (PDF) |
| 246 | High-efficient solar cells with III-V nanostructures 2013, 78, RM1D.1 | | 0 | Citations (PDF) |
| 247 | 1300 nm Wavelength InAs Quantum Dot Photodetector Grown on Silicon | 3.3 | 32 | Citations (PDF) |
| 248 | InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy | 3.3 | 15 | Citations (PDF) |
| 249 | Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities | 3.3 | 162 | Citations (PDF) |
| 250 | InAs/GaAs quantum-dot lasers monolithically grown on Si substrate 2012, , 882-883 | | 0 | Citations (PDF) |
| 251 | Silicon-based long-wavelength III&#x2013;V quantum-dot lasers 2012, , 88-91 | | 2 | Citations (PDF) |
| 252 | 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates | 3.3 | 258 | Citations (PDF) |
| 253 | Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate | 30.7 | 362 | Citations (PDF) |
| 254 | 1.3-um InAs/GaAs quantum-dot lasers monolithically grown on Ge substrate 2011, , 240-242 | | 0 | Citations (PDF) |
| 255 | Exciton distribution on single-walled carbon nanotube | 1.6 | 4 | Citations (PDF) |
| 256 | High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography | 4.1 | 15 | Citations (PDF) |
| 257 | High Power, Very Low Noise, C.W. Operation of 1.32μm Quantum-Dot Fabry-Perot Laser Diodes 2006, , | | 4 | Citations (PDF) |
| 258 | High power and very low noise operation at 1.3 and 1.5 μm with quantum dot and quantum dash Fabry-Perot lasers for microwave links 2006, , | | 4 | Citations (PDF) |
| 259 | Quantum Conductance in Single-Walled Carbon Nanotube Quantum Dots | 0.5 | 0 | Citations (PDF) |
| 260 | Size effect of quantum conductance in single-walled carbon nanotube quantum dots | 1.6 | 13 | Citations (PDF) |
| 261 | Dynamics of viscous fingers in Hele-Shaw cells of liquid crystals Theory and experiment | 2.4 | 16 | Citations (PDF) |
