| 1 | Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes | 3.0 | 6 | Citations (PDF) |
| 2 | Unexpected origin of the quantum efficiency reduction in long-wavelength
(
In
,
Ga
)
N
light-emitting diodes | 3.9 | 6 | Citations (PDF) |
| 3 | Increasing light extraction efficiency for UV LEDs with a low coverage p-GaN hole injection layer | 3.0 | 3 | Citations (PDF) |
| 4 | 10.4% external quantum efficiency 294 nm UV LEDs at 20 A/cm
2
with a fully transparent tunnel junction | 3.0 | 1 | Citations (PDF) |
| 5 | Characterization of long-cavity GaN vertical-cavity surface-emitting lasers with a topside dielectric lens | 1.9 | 1 | Citations (PDF) |
| 6 | Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy | 3.0 | 2 | Citations (PDF) |
| 7 | Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs | 3.0 | 2 | Citations (PDF) |
| 8 | Structural and electrical properties of MOCVD-grown scandium nitride thin films on sapphire, Si, GaN, and SiC | 3.0 | 3 | Citations (PDF) |
| 9 | Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs | 2.7 | 2 | Citations (PDF) |
| 10 | Optimizing Polarization Selective Unidirectional Photoluminescence from Phased‐Array Metasurfaces | 7.0 | 7 | Citations (PDF) |
| 11 | Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation | 1.9 | 11 | Citations (PDF) |
| 12 | Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs | 3.0 | 8 | Citations (PDF) |
| 13 | Dynamics of carrier injection through V-defects in long wavelength GaN LEDs | 3.0 | 13 | Citations (PDF) |
| 14 | Pure edge-dislocation half-loops in low-temperature
GaN
for V-defect formation | 3.9 | 4 | Citations (PDF) |
| 15 | Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes | 3.0 | 8 | Citations (PDF) |
| 16 | Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects | 3.0 | 9 | Citations (PDF) |
| 17 | Enhanced optical gain of c-plane InGaN laser diodes via a strain relaxed template with reduced threading dislocation density | 3.0 | 2 | Citations (PDF) |
| 18 | Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence | 2.0 | 10 | Citations (PDF) |
| 19 | Demonstration of UV-A stimulated emission from optical pumping with a nano-porous cladding layer | 2.1 | 5 | Citations (PDF) |
| 20 | High external quantum efficiency in ultra-small amber InGaN microLEDs scaled to 1 μm | 3.0 | 13 | Citations (PDF) |
| 21 | Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges | 1.2 | 5 | Citations (PDF) |
| 22 | Detection of hot electrons originating from an upper valley at
∼1.7eV
above the
Γ
valley in wurtzite GaN using electron emission spectroscopy | 3.4 | 5 | Citations (PDF) |
| 23 | Structure of V-defects in long wavelength GaN-based light emitting diodes | 2.0 | 30 | Citations (PDF) |
| 24 | Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition | 3.0 | 6 | Citations (PDF) |
| 25 | Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers | 2.0 | 8 | Citations (PDF) |
| 26 | N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization | 2.1 | 0 | Citations (PDF) |
| 27 | InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5% | 2.1 | 14 | Citations (PDF) |
| 28 | Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror | 1.7 | 9 | Citations (PDF) |
| 29 | Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments | 2.1 | 16 | Citations (PDF) |
| 30 | Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6% | 6.0 | 50 | Citations (PDF) |
| 31 | Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes | 3.0 | 17 | Citations (PDF) |
| 32 | Metasurface Light-Emitting Diodes with Directional and Focused Emission | 8.7 | 26 | Citations (PDF) |
| 33 | 10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN | 3.0 | 10 | Citations (PDF) |
| 34 | Nano-porous GaN cladding and scattering loss in edge emitting laser diodes | 3.0 | 27 | Citations (PDF) |
| 35 | Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2% | 3.0 | 23 | Citations (PDF) |
| 36 | Polarization-Enhanced p-AlGaN Superlattice Optimization for GUV LED | 1.3 | 19 | Citations (PDF) |
| 37 | Study of Pore Geometry and Dislocations in Porous GaN Based Pseudo-Substrates Using TEM | 1.3 | 7 | Citations (PDF) |
| 38 | Designs for III-nitride edge-emitting laser diodes with tunnel junction contacts for low internal optical absorption loss | 0.9 | 1 | Citations (PDF) |
| 39 | Computational design and optimization of nanostructured AlN deep-UV grating reflectors | 3.0 | 2 | Citations (PDF) |
| 40 | Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices | 3.0 | 7 | Citations (PDF) |
| 41 | Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition | 3.0 | 4 | Citations (PDF) |
| 42 | Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact | 3.0 | 56 | Citations (PDF) |
| 43 | Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices | 1.3 | 10 | Citations (PDF) |
| 44 | Progress of InGaN-Based Red Micro-Light Emitting Diodes | 2.1 | 37 | Citations (PDF) |
| 45 | Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes | 2.1 | 21 | Citations (PDF) |
| 46 | Guest Editorial Introduction to the Special Issue on Semiconductor Optoelectronic Materials and Devices | 1.3 | 0 | Citations (PDF) |
| 47 | Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer | 2.1 | 13 | Citations (PDF) |
| 48 | Improved Vertical Carrier Transport for Green III-Nitride LEDs Using
(In,Ga)N
Alloy Quantum Barriers | 3.9 | 14 | Citations (PDF) |
| 49 | Green edge emitting lasers with porous GaN cladding | 3.0 | 17 | Citations (PDF) |
| 50 | Designing Highly Directional Luminescent Phased-Array Metasurfaces with Reciprocity-Based Simulations | 4.2 | 9 | Citations (PDF) |
| 51 | Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells | 3.0 | 10 | Citations (PDF) |
| 52 | Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer | 2.1 | 15 | Citations (PDF) |
| 53 | Demonstration of C-Plane InGaN-Based Blue Laser Diodes Grown on a Strain-Relaxed Template | 2.1 | 6 | Citations (PDF) |
| 54 | Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon | 2.1 | 20 | Citations (PDF) |
| 55 | InGaN Based C-Plane Blue Laser Diodes on Strain Relaxed Template with Reduced Absorption Loss | 2.1 | 1 | Citations (PDF) |
| 56 | Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes | 3.0 | 18 | Citations (PDF) |
| 57 | Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-emitting diodes: epitaxy optimization and light extraction simulation | 2.2 | 10 | Citations (PDF) |
| 58 | Study of surface roughness of lifted-off epitaxial lateral overgrown GaN layers for the n-DBR mirror of a III-nitride vertical-cavity surface emitting laser | 2.1 | 7 | Citations (PDF) |
| 59 | Blue semipolar InGaN microcavity light-emitting diode with varying cavity lengths from 113 to 290 nm | 2.1 | 3 | Citations (PDF) |
| 60 | InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications | 2.4 | 5 | Citations (PDF) |
| 61 | Damage-free substrate removal technique: wet undercut etching of semipolar
20
2
¯
1
laser structures by incorporation of un/relaxed | 1.9 | 0 | Citations (PDF) |
| 62 | Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates | 1.9 | 19 | Citations (PDF) |
| 63 | 2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature | 3.0 | 14 | Citations (PDF) |
| 64 | Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control | 3.0 | 24 | Citations (PDF) |
| 65 | Light-emitting metalenses and meta-axicons for focusing and beaming of spontaneous emission | 13.7 | 71 | Citations (PDF) |
| 66 | Growth by MOCVD and photoluminescence of semipolar (202¯1¯) InN quantum dashes | 1.9 | 4 | Citations (PDF) |
| 67 | Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control | 3.0 | 14 | Citations (PDF) |
| 68 | Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments | 2.1 | 25 | Citations (PDF) |
| 69 | Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED | 0.7 | 2 | Citations (PDF) |
| 70 | Metalorganic chemical vapor deposition of InN quantum dots and nanostructures | 19.9 | 23 | Citations (PDF) |
| 71 | Limiting factors of GaN-on-GaN LED | 2.2 | 7 | Citations (PDF) |
| 72 | N-face GaN substrate roughening for improved performance GaN-on-GaN LED | 0.7 | 8 | Citations (PDF) |
| 73 | Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm | 3.0 | 71 | Citations (PDF) |
| 74 | Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio | 2.1 | 25 | Citations (PDF) |
| 75 | High internal quantum efficiency of long wavelength InGaN quantum wells | 3.0 | 18 | Citations (PDF) |
| 76 | Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers | 3.0 | 45 | Citations (PDF) |
| 77 | Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature | 2.1 | 49 | Citations (PDF) |
| 78 | Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐ to the Micrometer Scale | 2.0 | 16 | Citations (PDF) |
| 79 | Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration | 1.2 | 28 | Citations (PDF) |
| 80 | Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies | 2.2 | 92 | Citations (PDF) |
| 81 | Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers | 2.1 | 9 | Citations (PDF) |
| 82 | Improving backside (N-face) GaN substrate roughening by pre-annealing for GaN-on-GaN LED | 3.9 | 6 | Citations (PDF) |
| 83 | Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package | 1.9 | 4 | Citations (PDF) |
| 84 | High efficiency blue InGaN microcavity light-emitting diode with a 205 nm ultra-short cavity | 3.0 | 6 | Citations (PDF) |
| 85 | MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates | 2.2 | 10 | Citations (PDF) |
| 86 | Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays | 2.1 | 140 | Citations (PDF) |
| 87 | Optical and electrical characterizations of micro-LEDs grown on lower defect density epitaxial layers | 3.0 | 16 | Citations (PDF) |
| 88 | InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates | 2.1 | 45 | Citations (PDF) |
| 89 | Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition | 3.0 | 8 | Citations (PDF) |
| 90 | Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers | 3.0 | 19 | Citations (PDF) |
| 91 | Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine | 2.1 | 4 | Citations (PDF) |
| 92 | High-temperature electroluminescence properties of InGaN red 40 × 40
μ
m2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2% | 3.0 | 44 | Citations (PDF) |
| 93 | Semipolar {202¯1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing | 2.1 | 3 | Citations (PDF) |
| 94 | Influence of Si-Doping on Carrier Localization of Mocvd-grown InGaN/GaN Multiple Quantum Wells | 0.2 | 0 | Citations (PDF) |
| 95 | Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process | 0.2 | 5 | Citations (PDF) |
| 96 | Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well | 0.2 | 0 | Citations (PDF) |
| 97 | Spectroscopic Studies in InGaN Quantum Wells | 0.2 | 1 | Citations (PDF) |
| 98 | Effect Of AlGaN/GaN Strained Layer Superlattice Period On InGaN MQW Laser Diodes | 0.2 | 2 | Citations (PDF) |
| 99 | Comparison Study of Structural and Optical Properties of In x Ga 1−x N/GaN Quantum Wells with Different In Compositions | 0.2 | 0 | Citations (PDF) |
| 100 | Deep levels in n-type Schottky and p+-n homojunction GaN diodes | 0.2 | 0 | Citations (PDF) |
| 101 | MOCVD Growth and Characterization of InN Quantum Dots | 1.5 | 10 | Citations (PDF) |
| 102 | Inhomogeneous Current Injection and Filamentary Lasing of Semipolar (2021¯) Blue GaN‐Based Vertical‐Cavity Surface‐Emitting Lasers with Buried Tunnel Junctions | 1.5 | 18 | Citations (PDF) |
| 103 | Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication | 16.2 | 61 | Citations (PDF) |
| 104 | Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes | 2.1 | 165 | Citations (PDF) |
| 105 | Semipolar (
20
21
¯
) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication | 2.1 | 48 | Citations (PDF) |
| 106 | Research Toward a Heterogeneously Integrated InGaN Laser on Silicon | 1.5 | 16 | Citations (PDF) |
| 107 | Lift-off of semipolar blue and green III-nitride LEDs grown on free-standing GaN | 3.0 | 2 | Citations (PDF) |
| 108 | High polarization and fast modulation speed of dual wavelengths electroluminescence from semipolar (20-21) micro light-emitting diodes with indium tin oxide surface grating | 3.0 | 20 | Citations (PDF) |
| 109 | Comparison between standing transparent mirrorless packaging and planar-mounted packaging for GaN-on-GaN LEDs | 0.3 | 0 | Citations (PDF) |
| 110 | Color-tunable &lt;10
μ
m square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates | 3.0 | 63 | Citations (PDF) |
| 111 | Transmission Geometry Laser Lighting with a Compact Emitter | 1.5 | 4 | Citations (PDF) |
| 112 | Quasiordered, subwavelength TiO2 hole arrays with tunable, omnidirectional color response | 1.8 | 4 | Citations (PDF) |
| 113 | Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN | 3.0 | 18 | Citations (PDF) |
| 114 | 7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector | 1.8 | 21 | Citations (PDF) |
| 115 | Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition | 2.1 | 5 | Citations (PDF) |
| 116 | Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces | 29.0 | 118 | Citations (PDF) |
| 117 | Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures | 16.2 | 5 | Citations (PDF) |
| 118 | Flow modulation metalorganic vapor phase epitaxy of GaN at temperatures below 600 ºC | 2.2 | 11 | Citations (PDF) |
| 119 | Demonstration of Efficient Semipolar 410 nm Violet Laser Diodes Heteroepitaxially Grown on High-Quality Low-Cost GaN/Sapphire Substrates | 4.6 | 9 | Citations (PDF) |
| 120 | Room-Temperature Continuous-Wave Electrically Driven Semipolar (202̅1) Blue Laser Diodes Heteroepitaxially Grown on a Sapphire Substrate | 6.0 | 13 | Citations (PDF) |
| 121 | Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates | 3.0 | 50 | Citations (PDF) |
| 122 | An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface | 2.1 | 5 | Citations (PDF) |
| 123 | High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth | 1.8 | 18 | Citations (PDF) |
| 124 | Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation | 3.0 | 179 | Citations (PDF) |
| 125 | Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1
μ
m in diameter | 3.0 | 248 | Citations (PDF) |
| 126 | AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates | 6.0 | 86 | Citations (PDF) |
| 127 | Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage | 2.2 | 27 | Citations (PDF) |
| 128 | Barriers to carrier transport in multiple quantum well nitride-based
c
-plane green light emitting diodes | 2.7 | 26 | Citations (PDF) |
| 129 | Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate | 1.8 | 6 | Citations (PDF) |
| 130 | Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments | 3.0 | 162 | Citations (PDF) |
| 131 | Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate | 3.0 | 17 | Citations (PDF) |
| 132 | 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates | 3.0 | 19 | Citations (PDF) |
| 133 | Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics | 3.0 | 49 | Citations (PDF) |
| 134 | Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition | 3.0 | 35 | Citations (PDF) |
| 135 | Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors | 3.0 | 32 | Citations (PDF) |
| 136 | Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length | 3.0 | 13 | Citations (PDF) |
| 137 | Fabrication and chemical lift-off of sub-micron scale III-nitride LED structures | 3.0 | 13 | Citations (PDF) |
| 138 | Color-changing refractive index sensor based on Fano-resonant filtering of optical modes in a porous dielectric Fabry-Pérot microcavity | 3.0 | 6 | Citations (PDF) |
| 139 | High performance of a semipolar InGaN laser with a phase-shifted embedded hydrogen silsesquioxane (HSQ) grating | 3.0 | 11 | Citations (PDF) |
| 140 | Superlattice hole injection layers for UV LEDs grown on SiC | 2.6 | 16 | Citations (PDF) |
| 141 | Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown | 0.2 | 1 | Citations (PDF) |
| 142 | Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells | 0.2 | 0 | Citations (PDF) |
| 143 | Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN | 2.8 | 35 | Citations (PDF) |
| 144 | Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire | 0.2 | 0 | Citations (PDF) |
| 145 | Polarity Determination for Mocvd Growth of GaN on Si(111) by Convergent Beam Electron Diffraction | 0.2 | 0 | Citations (PDF) |
| 146 | Fabrication and Characterization of GaN Junctionfield Effect Transistors | 0.2 | 0 | Citations (PDF) |
| 147 | Highly efficient InGaN based LED with pre-roughening backside of GaN substrate | 3.0 | 0 | Citations (PDF) |
| 148 | Toward heteroepitaxially grown semipolar GaN laser diodes under electrically injected continuous-wave mode: From materials to lasers | 10.4 | 10 | Citations (PDF) |
| 149 | Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation | 2.1 | 239 | Citations (PDF) |
| 150 | High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects | 6.0 | 45 | Citations (PDF) |
| 151 | Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition | 3.0 | 40 | Citations (PDF) |
| 152 | Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN | 2.2 | 41 | Citations (PDF) |
| 153 | Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition | 2.2 | 6 | Citations (PDF) |
| 154 | Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template | 3.4 | 10 | Citations (PDF) |
| 155 | Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition | 3.0 | 15 | Citations (PDF) |
| 156 | Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors | 2.2 | 11 | Citations (PDF) |
| 157 | Interwell carrier transport in InGaN/(In)GaN multiple quantum wells | 3.0 | 31 | Citations (PDF) |
| 158 | Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates | 8.0 | 14 | Citations (PDF) |
| 159 | Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal | 1.9 | 18 | Citations (PDF) |
| 160 | Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC | 2.2 | 38 | Citations (PDF) |
| 161 | Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region | 1.9 | 15 | Citations (PDF) |
| 162 | Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization | 1.9 | 9 | Citations (PDF) |
| 163 | Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes | 3.0 | 15 | Citations (PDF) |
| 164 | Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN | 3.0 | 19 | Citations (PDF) |
| 165 | Demonstration of blue semipolar (202¯1¯) GaN-based vertical-cavity surface-emitting lasers | 3.0 | 22 | Citations (PDF) |
| 166 | Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template | 3.0 | 52 | Citations (PDF) |
| 167 | Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate | 3.0 | 11 | Citations (PDF) |
| 168 | Strain relaxation of InGaN/GaN multi-quantum well light emitters via nanopatterning | 3.0 | 23 | Citations (PDF) |
| 169 | Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts | 3.0 | 42 | Citations (PDF) |
| 170 | Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC | 3.0 | 24 | Citations (PDF) |
| 171 | Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating | 3.0 | 31 | Citations (PDF) |
| 172 | Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization | 2.7 | 3 | Citations (PDF) |
| 173 | Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction | 2.1 | 33 | Citations (PDF) |
| 174 | On the optical polarization properties of semipolar (202¯1) and (202¯1¯) InGaN/GaN quantum wells | 2.0 | 9 | Citations (PDF) |
| 175 | Stable, Heat-Conducting Phosphor Composites for High-Power Laser Lighting | 8.0 | 156 | Citations (PDF) |
| 176 | Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN | 2.0 | 22 | Citations (PDF) |
| 177 | Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes | 3.0 | 68 | Citations (PDF) |
| 178 | Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures | 2.0 | 10 | Citations (PDF) |
| 179 | Semipolar $(20\bar{2}1)$ GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations | 2.1 | 15 | Citations (PDF) |
| 180 | Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition | 2.1 | 70 | Citations (PDF) |
| 181 | Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes | 4.7 | 6 | Citations (PDF) |
| 182 | Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition | 2.1 | 5 | Citations (PDF) |
| 183 | Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact | 3.0 | 51 | Citations (PDF) |
| 184 | Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers | 1.9 | 21 | Citations (PDF) |
| 185 | Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy | 6.0 | 31 | Citations (PDF) |
| 186 | High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum | 2.2 | 3 | Citations (PDF) |
| 187 | Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes | 3.0 | 31 | Citations (PDF) |
| 188 | Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers | 3.0 | 29 | Citations (PDF) |
| 189 | Development of high performance green c-plane III-nitride light-emitting diodes | 3.0 | 55 | Citations (PDF) |
| 190 | Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications | 3.0 | 27 | Citations (PDF) |
| 191 | Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes | 3.0 | 7 | Citations (PDF) |
| 192 | Investigation of Mg
δ
-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD | 2.2 | 12 | Citations (PDF) |
| 193 | An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures | 1.9 | 6 | Citations (PDF) |
| 194 | High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition | 3.0 | 331 | Citations (PDF) |
| 195 | GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition | 2.1 | 63 | Citations (PDF) |
| 196 | Exploring metalorganic chemical vapor deposition of Si-alloyed Al 2 O 3 dielectrics using disilane | 1.9 | 6 | Citations (PDF) |
| 197 | Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films | 2.3 | 8 | Citations (PDF) |
| 198 | Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system | 2.1 | 34 | Citations (PDF) |
| 199 | Optoelectronic properties of doped hydrothermal ZnO thin films | 1.5 | 4 | Citations (PDF) |
| 200 | Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs | 2.1 | 241 | Citations (PDF) |
| 201 | Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency | 3.0 | 42 | Citations (PDF) |
| 202 | Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography | 3.0 | 37 | Citations (PDF) |
| 203 | Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices | 2.0 | 18 | Citations (PDF) |
| 204 | Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser | 2.1 | 16 | Citations (PDF) |
| 205 | Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates | 8.0 | 53 | Citations (PDF) |
| 206 | Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition | 2.2 | 7 | Citations (PDF) |
| 207 | 444 nm InGaN light emitting diodes on low-defect-density $(11\bar{2}2)$ GaN templates on patterned sapphire | 2.1 | 12 | Citations (PDF) |
| 208 | Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs | 2.1 | 13 | Citations (PDF) |
| 209 | Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN | 2.0 | 4 | Citations (PDF) |
| 210 | Analysis of Vegard’s law for lattice matching InxAl1−xN to GaN by metalorganic chemical vapor deposition | 1.9 | 17 | Citations (PDF) |
| 211 | Growth of high purity N-polar (In,Ga)N films | 1.9 | 25 | Citations (PDF) |
| 212 | Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates | 2.1 | 15 | Citations (PDF) |
| 213 | Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring | 3.0 | 15 | Citations (PDF) |
| 214 | Semipolar III-nitride laser diodes with zinc oxide cladding | 3.0 | 9 | Citations (PDF) |
| 215 | Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors | 3.0 | 93 | Citations (PDF) |
| 216 | High wall-plug efficiency blue III-nitride LEDs designed for low current density operation | 3.0 | 42 | Citations (PDF) |
| 217 | Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence | 2.6 | 12 | Citations (PDF) |
| 218 | Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells | 3.0 | 17 | Citations (PDF) |
| 219 | Chapter 5. Assessing the Need for High Impact Technology Research, Development & Deployment for Mitigating Climate Change | 1.5 | 3 | Citations (PDF) |
| 220 | CW operation of high‐power blue laser diodes with polished facets on semi‐polar GaN substrates | 0.7 | 7 | Citations (PDF) |
| 221 | High luminous efficacy green light-emitting diodes with AlGaN cap layer | 3.0 | 84 | Citations (PDF) |
| 222 | High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth | 3.0 | 58 | Citations (PDF) |
| 223 | Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates | 3.0 | 42 | Citations (PDF) |
| 224 | Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes | 3.0 | 15 | Citations (PDF) |
| 225 | Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission | 2.0 | 6 | Citations (PDF) |
| 226 | Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting | 1.2 | 33 | Citations (PDF) |
| 227 | Dynamic characteristics of 410 nm semipolar (202¯1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz | 3.0 | 41 | Citations (PDF) |
| 228 | Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction | 3.0 | 74 | Citations (PDF) |
| 229 | Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture | 3.0 | 45 | Citations (PDF) |
| 230 | Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes | 3.0 | 38 | Citations (PDF) |
| 231 | Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202¯1¯) III-nitride laser diodes with chemically assisted ion beam etched facets | 3.0 | 28 | Citations (PDF) |
| 232 | Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes | 2.0 | 34 | Citations (PDF) |
| 233 | Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy | 3.0 | 11 | Citations (PDF) |
| 234 | High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications | 3.0 | 60 | Citations (PDF) |
| 235 | Effects of active region design on gain and carrier injection and transport of CW
semipolar InGaN laser diodes | 2.1 | 9 | Citations (PDF) |
| 236 | Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications | 1.9 | 30 | Citations (PDF) |
| 237 | Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave | 1.9 | 21 | Citations (PDF) |
| 238 | Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact | 3.0 | 58 | Citations (PDF) |
| 239 | Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition | 2.2 | 7 | Citations (PDF) |
| 240 | Flip-chip blue LEDs grown on
bulk GaN substrates utilizing photoelectrochemical etching for substrate removal | 2.1 | 12 | Citations (PDF) |
| 241 | Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W | 2.1 | 28 | Citations (PDF) |
| 242 | Estimation of roughness-induced scattering losses in III-nitride laser diodes with a photoelectrochemically etched current aperture | 1.5 | 3 | Citations (PDF) |
| 243 | Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN | 2.2 | 26 | Citations (PDF) |
| 244 | High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces | 2.2 | 16 | Citations (PDF) |
| 245 | High‐power LEDs using Ga‐doped ZnO current‐spreading layers | 0.7 | 16 | Citations (PDF) |
| 246 | Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN | 3.7 | 5 | Citations (PDF) |
| 247 | Study of Low-Efficiency Droop in Semipolar ( <formula formulatype="inline"> <tex Notation="TeX">$20\bar{2}\bar{1}$</tex> </formula>) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence | 1.0 | 36 | Citations (PDF) |
| 248 | Properties of near-field photoluminescence in green emitting single and multiple semipolar (202¯1) plane InGaN/GaN quantum wells | 2.6 | 8 | Citations (PDF) |
| 249 | High luminous flux from single crystal phosphor-converted laser-based white lighting system | 3.0 | 193 | Citations (PDF) |
| 250 | High-Modulation-Efficiency, Integrated Waveguide Modulator–Laser Diode at 448 nm | 6.0 | 88 | Citations (PDF) |
| 251 | Hybrid tunnel junction contacts to III–nitride light-emitting diodes | 2.1 | 116 | Citations (PDF) |
| 252 | Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices | 1.9 | 23 | Citations (PDF) |
| 253 | 2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system | 3.0 | 112 | Citations (PDF) |
| 254 | Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication | 3.4 | 146 | Citations (PDF) |
| 255 | Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts | 2.0 | 30 | Citations (PDF) |
| 256 | Thermally enhanced blue light-emitting diode | 3.0 | 57 | Citations (PDF) |
| 257 | Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells | 3.0 | 23 | Citations (PDF) |
| 258 | High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells | 2.0 | 27 | Citations (PDF) |
| 259 | Electroluminescence characteristics of blue InGaN quantum wells onm-plane GaN “double miscut” substrates | 2.1 | 5 | Citations (PDF) |
| 260 | Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions | 2.1 | 7 | Citations (PDF) |
| 261 | Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on InxGa1−xN/GaN quantum wells studied with time-resolved cathodoluminescence | 2.0 | 14 | Citations (PDF) |
| 262 | Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture | 2.1 | 13 | Citations (PDF) |
| 263 | Demonstration of low resistance ohmic contacts to p-type (202̄1̄) GaN | 2.2 | 12 | Citations (PDF) |
| 264 | High-power blue laser diodes with indium tin oxide cladding on semipolar (202¯1¯) GaN substrates | 3.0 | 56 | Citations (PDF) |
| 265 | Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures | 2.2 | 17 | Citations (PDF) |
| 266 | Low damage dry etch for III-nitride light emitters | 2.2 | 19 | Citations (PDF) |
| 267 | 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication | 3.0 | 136 | Citations (PDF) |
| 268 | High optical power and low‐efficiency droop blue light‐emitting diodes using compositionally step‐graded InGaN barrier | 0.7 | 21 | Citations (PDF) |
| 269 | Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture | 3.0 | 97 | Citations (PDF) |
| 270 | Observations of exciton–surface plasmon polariton coupling and exciton–phonon coupling in InGaN/GaN quantum wells covered with Au, Ag, and Al films | 2.3 | 6 | Citations (PDF) |
| 271 | InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays | 2.2 | 14 | Citations (PDF) |
| 272 | Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact | 3.0 | 131 | Citations (PDF) |
| 273 | Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells | 3.0 | 15 | Citations (PDF) |
| 274 | Stable vicinal step orientations in m-plane GaN | 1.9 | 14 | Citations (PDF) |
| 275 | Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD | 0.2 | 7 | Citations (PDF) |
| 276 | Electron Beam Pumped MQW InGaN/GaN Laser | 0.2 | 8 | Citations (PDF) |
| 277 | Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides | 2.2 | 213 | Citations (PDF) |
| 278 | Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition | 2.0 | 4 | Citations (PDF) |
| 279 | Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well | 3.0 | 33 | Citations (PDF) |
| 280 | Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission | 3.0 | 14 | Citations (PDF) |
| 281 | Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes | 3.0 | 30 | Citations (PDF) |
| 282 | Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties | 3.0 | 49 | Citations (PDF) |
| 283 | High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration | 3.0 | 58 | Citations (PDF) |
| 284 | Onset of plastic relaxation in semipolar (112¯2) In Ga1−N/GaN heterostructures | 1.9 | 13 | Citations (PDF) |
| 285 | Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence | 3.0 | 18 | Citations (PDF) |
| 286 | High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design | 3.0 | 55 | Citations (PDF) |
| 287 | Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching | 3.0 | 62 | Citations (PDF) |
| 288 | Optical properties and carrier dynamics in m ‐plane InGaN quantum wells | 0.7 | 10 | Citations (PDF) |
| 289 | Improved performance of $(20\bar{2}1)$ long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed In<i><sub>x</sub></i>Ga<sub>1−</sub><i><sub>x</sub></i>N buffer layers | 2.1 | 6 | Citations (PDF) |
| 290 | Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes | 1.8 | 25 | Citations (PDF) |
| 291 | Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers | 1.9 | 15 | Citations (PDF) |
| 292 | Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors | 3.0 | 35 | Citations (PDF) |
| 293 | Surface Structured Optical Coatings with Near-Perfect Broadband and Wide-Angle Antireflective Properties | 8.7 | 48 | Citations (PDF) |
| 294 | Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy | 3.4 | 48 | Citations (PDF) |
| 295 | Consequences of Optimal Bond Valence on Structural Rigidity and Improved Luminescence Properties in SrxBa2–xSiO4:Eu2+ Orthosilicate Phosphors | 6.7 | 380 | Citations (PDF) |
| 296 | Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN | 4.1 | 17 | Citations (PDF) |
| 297 | Proxies from Ab Initio Calculations for Screening Efficient Ce3+ Phosphor Hosts | 3.1 | 209 | Citations (PDF) |
| 298 | Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy | 3.0 | 53 | Citations (PDF) |
| 299 | Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes | 3.0 | 11 | Citations (PDF) |
| 300 | Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells | 1.9 | 7 | Citations (PDF) |
| 301 | An Efficient, Thermally Stable Cerium-Based Silicate Phosphor for Solid State White Lighting | 4.6 | 96 | Citations (PDF) |
| 302 | Tuning luminescent properties through solid-solution in (Ba1−xSrx)9Sc2Si6O24:Ce3+,Li+ | 3.0 | 33 | Citations (PDF) |
| 303 | Rapid microwave preparation of cerium-substituted sodium yttrium silicate phosphors for solid state white lighting | 3.0 | 15 | Citations (PDF) |
| 304 | Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN | 2.0 | 80 | Citations (PDF) |
| 305 | Comparison of Polished and Dry Etched Semipolar $(11\bar{2}2)$ III-Nitride Laser Facets | 1.8 | 6 | Citations (PDF) |
| 306 | Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting | 1.0 | 323 | Citations (PDF) |
| 307 | Structure–composition relationships and optical properties in cerium-substituted (Sr,Ba)3(Y,La)(BO3)3 borate phosphors | 5.1 | 51 | Citations (PDF) |
| 308 | Improving color rendition in solid state white lighting through the use of quantum dots | 5.1 | 45 | Citations (PDF) |
| 309 | Optical properties of extended and localized states in m-plane InGaN quantum wells | 3.0 | 36 | Citations (PDF) |
| 310 | N-polar GaN epitaxy and high electron mobility transistors | 2.2 | 215 | Citations (PDF) |
| 311 | Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays | 8.7 | 431 | Citations (PDF) |
| 312 | Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization | 3.0 | 27 | Citations (PDF) |
| 313 | Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates | 2.0 | 12 | Citations (PDF) |
| 314 | Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates | 3.0 | 45 | Citations (PDF) |
| 315 | Optimization of Annealing Process for Improved InGaN Solar Cell Performance | 2.3 | 4 | Citations (PDF) |
| 316 | Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates | 1.9 | 21 | Citations (PDF) |
| 317 | Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN | 3.0 | 11 | Citations (PDF) |
| 318 | Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes | 3.0 | 39 | Citations (PDF) |
| 319 | Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition | 3.0 | 23 | Citations (PDF) |
| 320 | Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth | 2.1 | 84 | Citations (PDF) |
| 321 | Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III–Nitride Light-Emitting Diodes | 2.1 | 3 | Citations (PDF) |
| 322 | High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates | 3.0 | 70 | Citations (PDF) |
| 323 | Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells | 3.0 | 50 | Citations (PDF) |
| 324 | Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor | 3.4 | 5 | Citations (PDF) |
| 325 | Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes | 3.0 | 50 | Citations (PDF) |
| 326 | Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography | 3.0 | 27 | Citations (PDF) |
| 327 | True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy | 2.0 | 23 | Citations (PDF) |
| 328 | Efficient and stable laser-driven white lighting | 1.2 | 171 | Citations (PDF) |
| 329 | Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra | 3.0 | 26 | Citations (PDF) |
| 330 | Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells | 3.0 | 11 | Citations (PDF) |
| 331 | Semipolar (202̄1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage | 1.9 | 28 | Citations (PDF) |
| 332 | Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolarm-Plane InGaN Light-Emitting Diodes | 2.1 | 3 | Citations (PDF) |
| 333 | Comparison of the Morphological and Optical Characteristics of InP Islands on GalnP/GaAs (311)A and (100) | 0.1 | 0 | Citations (PDF) |
| 334 | Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction | 0.1 | 0 | Citations (PDF) |
| 335 | Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes | 0.1 | 1 | Citations (PDF) |
| 336 | Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas | 0.1 | 1 | Citations (PDF) |
| 337 | Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes | 0.1 | 1 | Citations (PDF) |
| 338 | Comparison Study of Structural and Optical Properties of InxGa1-xN/GaN Quantum Wells with Different in Compositions | 0.1 | 0 | Citations (PDF) |
| 339 | Fabrication and Characterization of GaN Junctionfield Effect Transistors | 0.1 | 0 | Citations (PDF) |
| 340 | Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire | 0.1 | 0 | Citations (PDF) |
| 341 | Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers | 2.1 | 114 | Citations (PDF) |
| 342 | High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes | 2.1 | 103 | Citations (PDF) |
| 343 | Chip Shaping for Light Extraction Enhancement of Bulk $c$-Plane Light-Emitting Diodes | 2.1 | 23 | Citations (PDF) |
| 344 | Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices | 2.2 | 265 | Citations (PDF) |
| 345 | Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition | 3.0 | 20 | Citations (PDF) |
| 346 | High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy | 3.0 | 33 | Citations (PDF) |
| 347 | Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells | 3.0 | 55 | Citations (PDF) |
| 348 | 384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer | 3.0 | 27 | Citations (PDF) |
| 349 | Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures | 3.0 | 11 | Citations (PDF) |
| 350 | Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells | 3.0 | 179 | Citations (PDF) |
| 351 | Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures | 3.0 | 43 | Citations (PDF) |
| 352 | Optical Characterization of Double Peak Behavior in 101̄1 Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates | 1.9 | 3 | Citations (PDF) |
| 353 | Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy | 1.9 | 8 | Citations (PDF) |
| 354 | Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution” | 1.8 | 150 | Citations (PDF) |
| 355 | Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar ($20\bar{2}\bar{1}$) Blue Light-Emitting Diodes | 2.1 | 42 | Citations (PDF) |
| 356 | Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology | 3.4 | 45 | Citations (PDF) |
| 357 | The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN | 3.0 | 6 | Citations (PDF) |
| 358 | The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes | 3.0 | 40 | Citations (PDF) |
| 359 | A green-yellow emitting oxyfluoride solid solution phosphor Sr2Ba(AlO4F)1−x(SiO5)x:Ce3+ for thermally stable, high color rendition solid state white lighting | 7.3 | 111 | Citations (PDF) |
| 360 | Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission | 3.0 | 23 | Citations (PDF) |
| 361 | Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (0001¯) GaN | 3.0 | 8 | Citations (PDF) |
| 362 | Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy | 3.0 | 8 | Citations (PDF) |
| 363 | 444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer | 3.0 | 59 | Citations (PDF) |
| 364 | Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers | 3.0 | 55 | Citations (PDF) |
| 365 | Stress relaxation and critical thickness for misfit dislocation formation in (101¯) and (3031¯) InGaN/GaN heteroepitaxy | 3.0 | 32 | Citations (PDF) |
| 366 | Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates | 2.0 | 16 | Citations (PDF) |
| 367 | Effect of indium on the conductivity of poly‐crystalline GaN grown on high purity fused silica | 1.5 | 3 | Citations (PDF) |
| 368 | Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN | 1.5 | 1 | Citations (PDF) |
| 369 | Enhancement‐mode m ‐plane AlGaN/GaN HFETs with regrown n +‐GaN contact layer | 0.7 | 4 | Citations (PDF) |
| 370 | Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes | 3.0 | 57 | Citations (PDF) |
| 371 | High-brightness polarized light-emitting diodes | 19.9 | 237 | Citations (PDF) |
| 372 | Nanoindentation of laterally overgrown epitaxial gallium nitride | 2.1 | 63 | Citations (PDF) |
| 373 | InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs) | 2.3 | 11 | Citations (PDF) |
| 374 | Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation | 2.3 | 12 | Citations (PDF) |
| 375 | Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs | 3.4 | 36 | Citations (PDF) |
| 376 | Microstructure of ZnO films synthesized on MgAl2O4 from low-temperature aqueous solution: growth and post-annealing | 3.4 | 10 | Citations (PDF) |
| 377 | Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy | 1.9 | 5 | Citations (PDF) |
| 378 | Optical Characterization of Double Peak Behavior in 101̄1 Semipolar Light-Emitting Diodes on Miscut<i>m</i>-Plane Sapphire Substrates | 1.9 | 0 | Citations (PDF) |
| 379 | Ballistic-Electron-Emission Microscopy (BEEM) Studies of Gainp/GaAs Heterostructures | 0.1 | 0 | Citations (PDF) |
| 380 | Growth of High Quality (In,Ga,Al)N/GaN Heterostructure Materials and Devices by Atmospheric Pressure MOCVD | 0.1 | 0 | Citations (PDF) |
| 381 | Cleaved Facets in Gan by Wafer Fusion of Gan to Inp | 0.1 | 0 | Citations (PDF) |
| 382 | Stimulated Emission and Gain Measurements from InGaN/GaN Heterostructures | 0.1 | 0 | Citations (PDF) |
| 383 | Optical Dielectric Response of Gallium Nitride Studied by Variable Angle Spectroscopic Ellipsometry | 0.1 | 0 | Citations (PDF) |
| 384 | Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using A Two-Step Process | 0.1 | 7 | Citations (PDF) |
| 385 | Influence of Si-Doping on Carrier Localization of Mocvd-Grown InGaN/GaN Multiple Quantum Wells | 0.1 | 0 | Citations (PDF) |
| 386 | Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells | 0.1 | 0 | Citations (PDF) |
| 387 | Optical Characteristics Of Mocvd-Grown Ingan/Gan Multiple Quantum Wells Investigated By Excitation Energy Dependent Pl And Ple Spectroscopy | 0.1 | 1 | Citations (PDF) |
| 388 | Study of Stimulated Emission in InGaN/GaN Multi-Quantum Wells in the Temperature Range of 175 k to 575 k | 0.1 | 0 | Citations (PDF) |
| 389 | Optical Anisotropy Studies of Sapphire by Raman Scattering and Spectroscopic Transmission Ellipsometry | 0.1 | 4 | Citations (PDF) |
| 390 | Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in Mocvd-Grown InGaN Epilayers and InGaN/GaN Quantum Wells | 0.1 | 3 | Citations (PDF) |
| 391 | Spectroscopic Studies in InGaN Quantum Wells | 0.1 | 0 | Citations (PDF) |
| 392 | Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well | 0.1 | 0 | Citations (PDF) |
| 393 | Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire | 0.1 | 4 | Citations (PDF) |
| 394 | Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures | 0.1 | 0 | Citations (PDF) |
| 395 | Nondegenerate Optical Pump-Probe Spectroscopy of Highly Excited Group III Nitrides | 0.1 | 0 | Citations (PDF) |
| 396 | Cerium Doped Garnet Phosphors for Application in White GaN-based LEDs | 0.1 | 2 | Citations (PDF) |
| 397 | Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGaN Films Using Prism-Coupling Techniques Correlated with Spectroscopic Reflection/Transmission Analysisa | 0.1 | 0 | Citations (PDF) |
| 398 | The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor | 0.1 | 1 | Citations (PDF) |
| 399 | Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) | 0.1 | 4 | Citations (PDF) |
| 400 | Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes | 4.1 | 107 | Citations (PDF) |
| 401 | A facile route to patterned epitaxial ZnO nanostructures by soft lithography | 7.3 | 20 | Citations (PDF) |
| 402 | Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al$_{2}$O$_{3}$ Deposited by Atomic Layer Deposition | 2.1 | 18 | Citations (PDF) |
| 403 | Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting | 3.0 | 215 | Citations (PDF) |
| 404 | Effect of doping and polarization on carrier collection in InGaN quantum well solar cells | 3.0 | 79 | Citations (PDF) |
| 405 | N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate | 3.4 | 36 | Citations (PDF) |
| 406 | Thermally Induced Pore Formation in Epitaxial ZnO Films Grown from Low Temperature Aqueous Solution | 3.4 | 35 | Citations (PDF) |
| 407 | RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation | 3.4 | 20 | Citations (PDF) |
| 408 | Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures | 3.0 | 32 | Citations (PDF) |
| 409 | High internal and external quantum efficiency InGaN/GaN solar cells | 3.0 | 206 | Citations (PDF) |
| 410 | High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm | 3.0 | 127 | Citations (PDF) |
| 411 | Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates | 2.0 | 45 | Citations (PDF) |
| 412 | Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy | 3.0 | 51 | Citations (PDF) |
| 413 | High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$ | 2.1 | 180 | Citations (PDF) |
| 414 | Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes | 3.0 | 22 | Citations (PDF) |
| 415 | High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes | 3.0 | 78 | Citations (PDF) |
| 416 | Semipolar Single-Crystal ZnO Films Deposited by Low-Temperature Aqueous Solution Phase Epitaxy on GaN Light-Emitting Diodes | 2.1 | 11 | Citations (PDF) |
| 417 | 47.1:
Invited Paper
: Progress in Green and Blue Laser Diodes and Their Application in Pico Projection Systems | 0.6 | 5 | Citations (PDF) |
| 418 | High temperature thermoelectric properties of optimized InGaN | 2.0 | 60 | Citations (PDF) |
| 419 | Group III-nitride lasers: a materials perspective | 14.0 | 150 | Citations (PDF) |
| 420 | Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition | 1.9 | 60 | Citations (PDF) |
| 421 | Growth and characterization of N‐polar GaN and AlGaN/GaN HEMTs on (111) silicon | 0.7 | 8 | Citations (PDF) |
| 422 | Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates | 0.7 | 7 | Citations (PDF) |
| 423 | Efficient and Color‐Tunable Oxyfluoride Solid Solution Phosphors for Solid‐State White Lighting | 24.5 | 331 | Citations (PDF) |
| 424 | Electroluminescence enhancement of
(
11
2
¯
2
)
| 2.7 | 19 | Citations (PDF) |
| 425 | Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells | 3.0 | 36 | Citations (PDF) |
| 426 | High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes | 3.0 | 31 | Citations (PDF) |
| 427 | Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes | 3.0 | 71 | Citations (PDF) |
| 428 | Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate | 3.0 | 62 | Citations (PDF) |
| 429 | Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN | 1.9 | 3 | Citations (PDF) |
| 430 | Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires | 3.0 | 13 | Citations (PDF) |
| 431 | Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes | 3.0 | 47 | Citations (PDF) |
| 432 | Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals | 3.0 | 37 | Citations (PDF) |
| 433 | AlGaN-Cladding-Free $m$-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers | 2.1 | 4 | Citations (PDF) |
| 434 | Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells | 3.0 | 27 | Citations (PDF) |
| 435 | Ohmic Cathode Electrode on the Backside of m-Plane and (2021) Bulk GaN Substrates for Optical Device Applications | 1.9 | 4 | Citations (PDF) |
| 436 | Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN | 1.9 | 1 | Citations (PDF) |
| 437 | Ohmic Cathode Electrode on the Backside ofm-Plane and (2021) Bulk GaN Substrates for Optical Device Applications | 1.9 | 1 | Citations (PDF) |
| 438 | Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure | 3.0 | 17 | Citations (PDF) |
| 439 | Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges | 2.7 | 244 | Citations (PDF) |
| 440 | Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes | 1.9 | 36 | Citations (PDF) |
| 441 | Growth and characterization of AlGaN/GaN/AlGaN field effect transistors | 0.7 | 5 | Citations (PDF) |
| 442 | Polarization field crossover in semi‐polar InGaN/GaN single quantum wells | 0.7 | 5 | Citations (PDF) |
| 443 | High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes | 2.1 | 62 | Citations (PDF) |
| 444 | High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates | 2.1 | 171 | Citations (PDF) |
| 445 | 30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique | 2.1 | 79 | Citations (PDF) |
| 446 | Lattice Tilt and Misfit Dislocations in (11\bar22) Semipolar GaN Heteroepitaxy | 2.1 | 72 | Citations (PDF) |
| 447 | AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm | 2.1 | 82 | Citations (PDF) |
| 448 | Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN | 3.0 | 78 | Citations (PDF) |
| 449 | Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates | 3.0 | 46 | Citations (PDF) |
| 450 | Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy | 3.0 | 10 | Citations (PDF) |
| 451 | Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells | 2.0 | 28 | Citations (PDF) |
| 452 | Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy | 3.0 | 41 | Citations (PDF) |
| 453 | Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes | 3.0 | 68 | Citations (PDF) |
| 454 | Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition | 2.0 | 32 | Citations (PDF) |
| 455 | Technique to evaluate the diode ideality factor of light-emitting diodes | 3.0 | 32 | Citations (PDF) |
| 456 | High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates | 2.1 | 79 | Citations (PDF) |
| 457 | Optimization of Device Structures for Bright Blue Semipolar (1011) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition | 1.9 | 19 | Citations (PDF) |
| 458 | Electroluminescence Characterization of (2021) InGaN/GaN Light Emitting Diodes with Various Wavelengths | 1.9 | 24 | Citations (PDF) |
| 459 | High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar (3031) Bulk GaN Substrate | 1.9 | 12 | Citations (PDF) |
| 460 | Propagation of Spontaneous Emission in Birefringentm-Axis Oriented Semipolar (11\bar22) (Al,In,Ga)N Waveguide Structures | 1.9 | 7 | Citations (PDF) |
| 461 | Spontaneous formation of \lbrace 1\,\bar{1}\,0\,1\rbrace InGaN quantum wells on a (1\,1\,\bar{2} \,2) GaN template and their electroluminescence characteristics | 2.2 | 3 | Citations (PDF) |
| 462 | Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes | 1.9 | 20 | Citations (PDF) |
| 463 | Low Ohmic Contact Resistancem-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations | 2.1 | 13 | Citations (PDF) |
| 464 | Optical waveguide simulations for the optimization of InGaN-based green laser diodes | 2.0 | 74 | Citations (PDF) |
| 465 | Low resistance Ti/Al/Au ohmic backside contacts to nonpolar
m
-plane
n
-GaN | 0.7 | 2 | Citations (PDF) |
| 466 | Sr2.975−xBaxCe0.025AlO4F: a Highly Efficient Green-Emitting Oxyfluoride Phosphor for Solid State White Lighting | 6.7 | 234 | Citations (PDF) |
| 467 | Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates | 2.0 | 24 | Citations (PDF) |
| 468 | InGaN/GaN Blue Laser Diode Grown on Semipolar (30\bar31) Free-Standing GaN Substrates | 2.1 | 28 | Citations (PDF) |
| 469 | Future of group-III nitride semiconductor green laser diodes [Invited] | 1.8 | 67 | Citations (PDF) |
| 470 | Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition | 3.0 | 21 | Citations (PDF) |
| 471 | N-Polar InAlN/AlN/GaN MIS-HEMTs | 3.4 | 35 | Citations (PDF) |
| 472 | Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes | 2.1 | 28 | Citations (PDF) |
| 473 | Measurement of electron overflow in 450 nm InGaN light-emitting diode structures | 3.0 | 190 | Citations (PDF) |
| 474 | Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect | 3.0 | 32 | Citations (PDF) |
| 475 | m
-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers | 3.0 | 20 | Citations (PDF) |
| 476 | Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer | 3.0 | 40 | Citations (PDF) |
| 477 | Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition | 3.0 | 34 | Citations (PDF) |
| 478 | Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation | 2.0 | 72 | Citations (PDF) |
| 479 | Observation of whispering gallery modes in nonpolar m-plane GaN microdisks | 3.0 | 17 | Citations (PDF) |
| 480 | Photoelectrochemical etching of p-type GaN heterostructures | 3.0 | 27 | Citations (PDF) |
| 481 | High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications | 3.0 | 22 | Citations (PDF) |
| 482 | Evaluation of GaN substrates grown in supercritical basic ammonia | 3.0 | 5 | Citations (PDF) |
| 483 | Customized Filter Cube in Fluorescence Microscope Measurements of InGaN/GaN Quantum-Well Characterization | 1.9 | 1 | Citations (PDF) |
| 484 | Enhancing the Light Extraction Efficiency of Blue Semipolar (1011) Nitride-Based Light Emitting Diodes through Surface Patterning | 1.9 | 15 | Citations (PDF) |
| 485 | Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition | 1.9 | 37 | Citations (PDF) |
| 486 | Photoelectrochemical Undercut Etching of m-Plane GaN for Microdisk Applications | 3.1 | 14 | Citations (PDF) |
| 487 | Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance | 3.0 | 27 | Citations (PDF) |
| 488 | Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 \bar1 0) and semipolar (1 1 \bar{2} 2) orientations | 2.9 | 43 | Citations (PDF) |
| 489 | GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation | 2.1 | 64 | Citations (PDF) |
| 490 | m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching | 2.1 | 43 | Citations (PDF) |
| 491 | Enhancement-Modem-plane AlGaN/GaN Heterojunction Field-Effect Transistors | 2.1 | 32 | Citations (PDF) |
| 492 | Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN | 3.1 | 32 | Citations (PDF) |
| 493 | Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures | 2.3 | 24 | Citations (PDF) |
| 494 | Recent progress in nonpolar LEDs as polarized light emitters | 1.5 | 10 | Citations (PDF) |
| 495 | Highly efficient broad‐area blue and white light‐emitting diodes on bulk GaN substrates | 1.5 | 29 | Citations (PDF) |
| 496 | Electron transport in nitrogen‐polar high electron mobility transistors | 0.7 | 2 | Citations (PDF) |
| 497 | Comparison of time‐resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates | 0.7 | 36 | Citations (PDF) |
| 498 | Growth of In-doped ZnO films by metalorganic chemical vapor deposition on GaN(0001) templates | 0.7 | 3 | Citations (PDF) |
| 499 | Homoepitaxial growth and characterization of ZnO(0001) thin films grown by metalorganic chemical vapor epitaxy | 0.7 | 4 | Citations (PDF) |
| 500 | Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition | 1.9 | 221 | Citations (PDF) |
| 501 | Characterization of blue-green m-plane InGaN light emitting diodes | 3.0 | 84 | Citations (PDF) |
| 502 | RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate | 3.4 | 27 | Citations (PDF) |
| 503 | The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs | 3.4 | 54 | Citations (PDF) |
| 504 | Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates | 3.4 | 47 | Citations (PDF) |
| 505 | Substitution of oxygen by fluorine in the GdSr_2AlO_5:Ce^3+ phosphors: Gd_1−xSr_2+xAlO_5−xF_x solid solutions for solid state white lighting | 3.0 | 43 | Citations (PDF) |
| 506 | Probing local structure in the yellow phosphor LaSr2AlO5 : Ce3+, by the maximum entropy method and pair distribution function analysis | 7.3 | 43 | Citations (PDF) |
| 507 | Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy | 3.0 | 16 | Citations (PDF) |
| 508 | LaSr2AlO5, a Versatile Host Compound for Ce3+-Based Yellow Phosphors: Structural Tuning of Optical Properties and Use in Solid-State White Lighting | 6.7 | 193 | Citations (PDF) |
| 509 | Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well | 3.0 | 44 | Citations (PDF) |
| 510 | AlGaN/GaN HEMT With a Transparent Gate Electrode | 3.4 | 22 | Citations (PDF) |
| 511 | Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs | 3.4 | 31 | Citations (PDF) |
| 512 | La1−x−0.025Ce0.025Sr2+xAl1−xSixO5 solid solutions as tunable yellow phosphors for solid state white lighting | 7.3 | 80 | Citations (PDF) |
| 513 | MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications | 3.4 | 25 | Citations (PDF) |
| 514 | Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates | 3.0 | 99 | Citations (PDF) |
| 515 | Light Emitting Diodes with ZnO Current Spreading Layers Deposited from a Low Temperature Aqueous Solution | 2.1 | 25 | Citations (PDF) |
| 516 | Effects of Growth Temperature and Postgrowth Annealing on Inhomogeneous Luminescence Characteristics of Green-Emitting InGaN Films | 2.3 | 3 | Citations (PDF) |
| 517 | Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates | 2.3 | 21 | Citations (PDF) |
| 518 | InGaN/GaN laser diodes on semipolar (10) bulk GaN substrates | 0.7 | 3 | Citations (PDF) |
| 519 | Enhancement of external quantum efficiency in GaN‐based light emitting diodes using a suspended geometry | 0.7 | 8 | Citations (PDF) |
| 520 | Properties of ZnO(0001) layers grown by metalorganic chemical vapor deposition on GaN(0001) templates | 0.7 | 2 | Citations (PDF) |
| 521 | Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films | 0.7 | 56 | Citations (PDF) |
| 522 | Metalorganic chemical vapor deposition of ZnO(0001) thin films on GaN(0001) templates and ZnO(0001) substrates | 0.7 | 12 | Citations (PDF) |
| 523 | Temperature‐dependent high‐frequency performance of deep submicron AlGaN/GaN HEMTs | 0.7 | 3 | Citations (PDF) |
| 524 | M-plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth onc-plane patterned templates | 0.7 | 1 | Citations (PDF) |
| 525 | Improved quality nonpolar a ‐plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) | 1.5 | 7 | Citations (PDF) |
| 526 | Optical polarization of m ‐plane In‐GaN/GaN light‐emitting diodes characterized via confocal microscope | 1.5 | 25 | Citations (PDF) |
| 527 | Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition | 1.9 | 175 | Citations (PDF) |
| 528 | Step-flow growth of ZnO(0001) on GaN(0001) by metalorganic chemical vapor epitaxy | 1.9 | 24 | Citations (PDF) |
| 529 | Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes | 1.9 | 25 | Citations (PDF) |
| 530 | Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates | 2.0 | 47 | Citations (PDF) |
| 531 | Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition | 2.0 | 91 | Citations (PDF) |
| 532 | Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates | 3.0 | 172 | Citations (PDF) |
| 533 | Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors | 3.4 | 19 | Citations (PDF) |
| 534 | Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures | 2.0 | 63 | Citations (PDF) |
| 535 | High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap | 3.0 | 414 | Citations (PDF) |
| 536 | Highly Polarized Single-Chip ELED Sources Using Oppositely Strained MQW Emitters and Absorbers | 1.8 | 0 | Citations (PDF) |
| 537 | Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure | 2.9 | 58 | Citations (PDF) |
| 538 | N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier | 3.4 | 46 | Citations (PDF) |
| 539 | Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes | 1.8 | 11 | Citations (PDF) |
| 540 | Output Saturation and Linearity of Waveguide Unitraveling-Carrier Photodiodes | 1.3 | 19 | Citations (PDF) |
| 541 | Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis | 3.4 | 20 | Citations (PDF) |
| 542 | Correlation Between DC–RF Dispersion and Gate Leakage in Deeply Recessed GaN/AlGaN/GaN HEMTs | 3.4 | 18 | Citations (PDF) |
| 543 | V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation | 3.4 | 45 | Citations (PDF) |
| 544 | Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors | 2.0 | 21 | Citations (PDF) |
| 545 | V-Gate GaN HEMTs for X-Band Power Applications | 3.4 | 65 | Citations (PDF) |
| 546 | Red-emitting SrIn2O4 : Eu3+phosphor powders for applications in solid state white lamps | 2.9 | 18 | Citations (PDF) |
| 547 | Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition | 1.9 | 29 | Citations (PDF) |
| 548 | Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes | 1.9 | 12 | Citations (PDF) |
| 549 | Microdiffraction imaging of dislocation densities in microstructured samples | 1.8 | 1 | Citations (PDF) |
| 550 | Hexagonal Truncated Pyramidal Light Emitting Diodes through Wafer Bonding of ZnO to GaN, Laser Lift-off, and Photo Chemical Etching | 1.9 | 6 | Citations (PDF) |
| 551 | Pointed Cone Shaped Light-Emitting Diodes Based on ZnO/GaN Wafer Bonding | 1.9 | 1 | Citations (PDF) |
| 552 | Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition | 2.0 | 57 | Citations (PDF) |
| 553 | Plane Dependent Growth of GaN in Supercritical Basic Ammonia | 2.1 | 19 | Citations (PDF) |
| 554 | Electrical characterization of low defect density nonpolar (11¯20) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) | 2.5 | 1 | Citations (PDF) |
| 555 | Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes | 2.9 | 59 | Citations (PDF) |
| 556 | Ga
N
∕
In
Ga
N
light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth | 3.0 | 46 | Citations (PDF) |
| 557 | Experimental technique to correlate optical excitation intensities with electrical excitation intensities for semiconductor optoelectronic device characterization | 2.2 | 12 | Citations (PDF) |
| 558 | High quality AlN grown on SiC by metal organic chemical vapor deposition | 3.0 | 89 | Citations (PDF) |
| 559 | A yellow-emitting Ce3+ phosphor, La1−xCexSr2AlO5, for white light-emitting diodes | 3.0 | 163 | Citations (PDF) |
| 560 | Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress | 3.0 | 22 | Citations (PDF) |
| 561 | Optical polarization characteristics of InGaN∕GaN light-emitting diodes fabricated on GaN substrates oriented between (101¯) and (101¯1¯) planes | 3.0 | 36 | Citations (PDF) |
| 562 | Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy | 2.0 | 7 | Citations (PDF) |
| 563 | Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth | 3.0 | 20 | Citations (PDF) |
| 564 | Dichromatic color tuning with InGaN-based light-emitting diodes | 3.0 | 8 | Citations (PDF) |
| 565 | Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes | 2.2 | 15 | Citations (PDF) |
| 566 | A novel hybrid pulsed laser deposition/metalorganic vapour deposition method to form rare-earth activated GaN | 2.9 | 2 | Citations (PDF) |
| 567 | Electroluminescence efficiency of (1\,0\,\bar{1}\,0) -oriented InGaN-based light-emitting diodes at low temperature | 2.9 | 18 | Citations (PDF) |
| 568 | High Power and High Efficiency Semipolar InGaN Light Emitting Diodes | 0.0 | 36 | Citations (PDF) |
| 569 | Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix | 0.0 | 2 | Citations (PDF) |
| 570 | Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth | 1.2 | 22 | Citations (PDF) |
| 571 | Photoelectrochemical Properties of Nonpolar and Semipolar GaN | 1.9 | 28 | Citations (PDF) |
| 572 | Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes | 1.9 | 54 | Citations (PDF) |
| 573 | Direct water photoelectrolysis with patterned n-GaN | 3.0 | 79 | Citations (PDF) |
| 574 | Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate | 2.0 | 20 | Citations (PDF) |
| 575 | High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate | 3.0 | 82 | Citations (PDF) |
| 576 | Impact of strain on free-exciton resonance energies in wurtzite AlN | 2.0 | 49 | Citations (PDF) |
| 577 | Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness | 3.0 | 21 | Citations (PDF) |
| 578 | Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN | 3.0 | 79 | Citations (PDF) |
| 579 | Time-resolved cathodoluminescence study of carrier relaxation, transfer, collection, and filling in coupledInxGa1−xN∕GaNmultiple and single quantum wells | 3.4 | 21 | Citations (PDF) |
| 580 | Carrier relaxation dynamics and steady-state charge distributions in coupled InGaN∕GaN multiple and single quantum wells | 2.0 | 6 | Citations (PDF) |
| 581 | Electrical characterization of p-type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition | 3.0 | 37 | Citations (PDF) |
| 582 | Defect-mediated surface morphology of nonpolar m-plane GaN | 3.0 | 31 | Citations (PDF) |
| 583 | Thin metal intracavity contact and lateral current-distribution scheme for GaN-based vertical-cavity lasers | 3.0 | 10 | Citations (PDF) |
| 584 | Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy | 3.0 | 8 | Citations (PDF) |
| 585 | Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films | 3.0 | 20 | Citations (PDF) |
| 586 | Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrownm-Plane GaN Films | 1.9 | 2 | Citations (PDF) |
| 587 | Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures | 1.9 | 18 | Citations (PDF) |
| 588 | Demonstration of Nonpolarm-Plane InGaN/GaN Laser Diodes | 1.9 | 209 | Citations (PDF) |
| 589 | Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz | 1.9 | 51 | Citations (PDF) |
| 590 | High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate | 1.9 | 92 | Citations (PDF) |
| 591 | Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature | 1.9 | 4 | Citations (PDF) |
| 592 | Semipolar $(10\bar{1}\bar{1})$ InGaN/GaN Laser Diodes on Bulk GaN Substrates | 1.9 | 45 | Citations (PDF) |
| 593 | Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents | 1.9 | 10 | Citations (PDF) |
| 594 | Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes | 1.9 | 87 | Citations (PDF) |
| 595 | Demonstration of high power blue-green light emitting diode on semipolar (112̅2) bulk GaN substrate | 0.7 | 30 | Citations (PDF) |
| 596 | Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes | 1.8 | 16 | Citations (PDF) |
| 597 | 40-Gb/s Widely Tunable Low-Drive-Voltage Electroabsorption-Modulated Transmitters | 3.5 | 34 | Citations (PDF) |
| 598 | Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques | 1.6 | 28 | Citations (PDF) |
| 599 | Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition | 3.0 | 68 | Citations (PDF) |
| 600 | Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth | 3.0 | 74 | Citations (PDF) |
| 601 | Growth and characterization of N-polar InGaN∕GaN multiquantum wells | 3.0 | 127 | Citations (PDF) |
| 602 | High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar $(10\bar{1}\bar{1})$ Bulk GaN Substrates | 1.9 | 94 | Citations (PDF) |
| 603 | High Power and High External Efficiencym-Plane InGaN Light Emitting Diodes | 1.9 | 247 | Citations (PDF) |
| 604 | Study of the n + GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance | 1.9 | 11 | Citations (PDF) |
| 605 | Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition | 2.0 | 186 | Citations (PDF) |
| 606 | High Output Saturation and High-Linearity Uni-Traveling-Carrier Waveguide Photodiodes | 1.8 | 42 | Citations (PDF) |
| 607 | Growth of Heteroepitaxial ZnO Thin Films on GaN-Buffered Al2O3 (0001) Substrates by Low-Temperature Hydrothermal Synthesis at 90 °C | 17.0 | 103 | Citations (PDF) |
| 608 | Triangular pattern formation on silicon through self-organization of GaN nanoparticles | 6.6 | 1 | Citations (PDF) |
| 609 | Increased power from deep ultraviolet LEDs via precursor selection | 1.9 | 12 | Citations (PDF) |
| 610 | Growth evolution in sidewall lateral epitaxial overgrowth (SLEO) | 1.9 | 34 | Citations (PDF) |
| 611 | Mega-cone blue LEDs based on ZnO/GaN direct wafer bonding | 0.7 | 7 | Citations (PDF) |
| 612 | Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy | 1.5 | 7 | Citations (PDF) |
| 613 | Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures | 1.5 | 1 | Citations (PDF) |
| 614 | Vertical defects in heavily Mg‐doped Al 0.69 Ga 0.31 N | 1.5 | 2 | Citations (PDF) |
| 615 | Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells | 1.5 | 7 | Citations (PDF) |
| 616 | MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures | 1.5 | 5 | Citations (PDF) |
| 617 | Improved electroluminescence on nonpolarm -plane InGaN/GaN quantum wells LEDs | 2.0 | 151 | Citations (PDF) |
| 618 | High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate | 2.0 | 109 | Citations (PDF) |
| 619 | AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes | 1.9 | 75 | Citations (PDF) |
| 620 | Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells | 2.3 | 11 | Citations (PDF) |
| 621 | Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding | 3.0 | 33 | Citations (PDF) |
| 622 | AlGaN/GaN high electron mobility transistors with InGaN back-barriers | 3.4 | 358 | Citations (PDF) |
| 623 | High-performance E-mode AlGaN/GaN HEMTs | 3.4 | 183 | Citations (PDF) |
| 624 | Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN∕GaN heterostructures using capacitance deep level optical spectroscopy | 3.0 | 37 | Citations (PDF) |
| 625 | Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment | 3.4 | 59 | Citations (PDF) |
| 626 | GaN light-emitting diodes with Archimedean lattice photonic crystals | 3.0 | 44 | Citations (PDF) |
| 627 | Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells | 3.0 | 20 | Citations (PDF) |
| 628 | Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics | 2.0 | 120 | Citations (PDF) |
| 629 | Photonic crystal laser lift-off GaN light-emitting diodes | 3.0 | 124 | Citations (PDF) |
| 630 | Electron mobility in graded AlGaN alloys | 3.0 | 47 | Citations (PDF) |
| 631 | High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates | 3.4 | 412 | Citations (PDF) |
| 632 | Exciton dynamics in nonpolar (110) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth | 0.7 | 0 | Citations (PDF) |
| 633 | Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers | 1.5 | 4 | Citations (PDF) |
| 634 | X-ray microdiffraction imaging investigations of wing tilt in epitaxially overgrown GaN | 1.5 | 3 | Citations (PDF) |
| 635 | Optimization of AlGaN/GaN HEMTs for high frequency operation | 1.5 | 42 | Citations (PDF) |
| 636 | Crystal quality and growth evolution of aluminum nitride on silicon carbide | 1.5 | 12 | Citations (PDF) |
| 637 | Novel devices based on the combination of nitride and II-VI materials | 1.5 | 1 | Citations (PDF) |
| 638 | AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths | 1.5 | 19 | Citations (PDF) |
| 639 | Optical polarization anisotropy in strainedA-plane GaN films onR-plane sapphire | 1.5 | 4 | Citations (PDF) |
| 640 | Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction | 1.5 | 1 | Citations (PDF) |
| 641 | Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors | 33.4 | 665 | Citations (PDF) |
| 642 | Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy | 1.9 | 30 | Citations (PDF) |
| 643 | Effect of ohmic contacts on buffer leakage of GaN transistors | 3.4 | 58 | Citations (PDF) |
| 644 | Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs | 2.3 | 8 | Citations (PDF) |
| 645 | Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs | 2.7 | 100 | Citations (PDF) |
| 646 | High performance deeply-recessed GaN power HEMTs without surface passivation | 0.7 | 9 | Citations (PDF) |
| 647 | First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes | 1.9 | 28 | Citations (PDF) |
| 648 | Effects of Phosphor Application Geometry on White Light-Emitting Diodes | 1.9 | 23 | Citations (PDF) |
| 649 | Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding | 1.9 | 11 | Citations (PDF) |
| 650 | Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature | 1.9 | 11 | Citations (PDF) |
| 651 | Effect of Substrate Miscut on the Direct Growth of Semipolar (10-1-1) GaN on (100) MgAl2O4by Metalorganic Chemical Vapor Deposition | 1.9 | 17 | Citations (PDF) |
| 652 | Etching of Ga-face and N-face GaN by Inductively Coupled Plasma | 1.9 | 27 | Citations (PDF) |
| 653 | Nonpolarm-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation | 1.9 | 68 | Citations (PDF) |
| 654 | Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC | 1.9 | 63 | Citations (PDF) |
| 655 | Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrowna-Plane GaN | 1.9 | 5 | Citations (PDF) |
| 656 | Stability of (1\bar100)m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition | 1.9 | 50 | Citations (PDF) |
| 657 | Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates | 3.0 | 71 | Citations (PDF) |
| 658 | Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution | 3.0 | 190 | Citations (PDF) |
| 659 | Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (1122)-plane GaN | 2.0 | 46 | Citations (PDF) |
| 660 | Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells | 2.0 | 96 | Citations (PDF) |
| 661 | Characterizing the nanoacoustic superlattice in a phonon cavity using a piezoelectric single quantum well | 3.0 | 18 | Citations (PDF) |
| 662 | Realization of high hole concentrations in Mg doped semipolar (101¯1¯) GaN | 3.0 | 18 | Citations (PDF) |
| 663 | Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy | 3.0 | 51 | Citations (PDF) |
| 664 | Interdigitated multipixel arrays for the fabrication of high-power light-emitting diodes with very low series resistances | 3.0 | 11 | Citations (PDF) |
| 665 | Cracking of III-nitride layers with strain gradients | 3.0 | 34 | Citations (PDF) |
| 666 | Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth | 3.0 | 126 | Citations (PDF) |
| 667 | Nitride-based high electron mobility transistors with a GaN spacer | 3.0 | 30 | Citations (PDF) |
| 668 | Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask | 3.0 | 109 | Citations (PDF) |
| 669 | Visible resonant modes in GaN-based photonic crystal membrane cavities | 3.0 | 50 | Citations (PDF) |
| 670 | Influence of the Dynamic Access Resistance in the$g_m$and$f_T$Linearity of AlGaN/GaN HEMTs | 2.7 | 204 | Citations (PDF) |
| 671 | Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy | 2.3 | 96 | Citations (PDF) |
| 672 | Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr;0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique | 0.7 | 0 | Citations (PDF) |
| 673 | Cone-shaped surface GaN-based light-emitting diodes | 0.7 | 40 | Citations (PDF) |
| 674 | Observation of high Q resonant modes in optically pumped GaN/InGaN microdisks fabricated using photoelectrochemical etching | 0.7 | 11 | Citations (PDF) |
| 675 | Spatially direct and indirect transitions in InGaN/GaN structures with coupled quantum wells | 0.7 | 2 | Citations (PDF) |
| 676 | Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering | 1.5 | 9 | Citations (PDF) |
| 677 | Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrowna-plane and planarc-plane GaN | 1.5 | 11 | Citations (PDF) |
| 678 | Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (10 11) GaN templates | 0.1 | 0 | Citations (PDF) |
| 679 | Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulkm-Plane GaN Substrate | 1.9 | 69 | Citations (PDF) |
| 680 | Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding | 1.9 | 3 | Citations (PDF) |
| 681 | Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates | 1.9 | 40 | Citations (PDF) |
| 682 | Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide | 1.9 | 24 | Citations (PDF) |
| 683 | A semipolar (10-1-3) InGaN/GaN green light emitting diode | 0.1 | 1 | Citations (PDF) |
| 684 | Local wing tilt analysis of laterally overgrown GaN by x-ray rocking curve imaging | 2.9 | 19 | Citations (PDF) |
| 685 | Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films | 1.9 | 26 | Citations (PDF) |
| 686 | Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction | 3.0 | 157 | Citations (PDF) |
| 687 | Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy | 3.0 | 141 | Citations (PDF) |
| 688 | Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN | 3.0 | 77 | Citations (PDF) |
| 689 | Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode | 3.0 | 227 | Citations (PDF) |
| 690 | Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques | 3.0 | 149 | Citations (PDF) |
| 691 | GaN blue photonic crystal membrane nanocavities | 3.0 | 82 | Citations (PDF) |
| 692 | Measurement of second order susceptibilities of GaN and AlGaN | 2.0 | 65 | Citations (PDF) |
| 693 | Optical evidence for lack of polarization in (112¯0) oriented GaN∕(AlGa)N quantum structures | 3.0 | 41 | Citations (PDF) |
| 694 | Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire | 2.0 | 47 | Citations (PDF) |
| 695 | Characterization of AlGaN∕GaNp-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors | 2.0 | 23 | Citations (PDF) |
| 696 | Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth | 3.0 | 55 | Citations (PDF) |
| 697 | Multiple-band-edge quantum-well intermixing in the InGaAs∕InGaAsP∕InGaP material system | 3.0 | 17 | Citations (PDF) |
| 698 | Demonstration of Nonpolarm-Plane InGaN/GaN Light-Emitting Diodes on Free-Standingm-Plane GaN Substrates | 1.9 | 200 | Citations (PDF) |
| 699 | Synthesis of luminescing (In,Ga)N nanoparticles from an inorganic ammonium fluoride precursor | 7.3 | 21 | Citations (PDF) |
| 700 | High-power AlGaN/GaN HEMTs for Ka-band applications | 3.4 | 469 | Citations (PDF) |
| 701 | Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts | 3.4 | 98 | Citations (PDF) |
| 702 | Simultaneous four-photon luminescence, third-harmonic generation, and second-harmonic generation microscopy of GaN | 3.0 | 14 | Citations (PDF) |
| 703 | Role of inclined threading dislocations in stress relaxation in mismatched layers | 2.0 | 123 | Citations (PDF) |
| 704 | Dipole Engineering in Nitride-based HEMTs | 0.0 | 0 | Citations (PDF) |
| 705 | Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN | 0.1 | 0 | Citations (PDF) |
| 706 | Identification of Carbon-related Bandgap States in GaN Grown by MOCVD | 0.1 | 2 | Citations (PDF) |
| 707 | Wafer-fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor with uid-GaAs Base-Collector Setback | 0.1 | 4 | Citations (PDF) |
| 708 | Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications | 1.9 | 5 | Citations (PDF) |
| 709 | AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate | 1.5 | 18 | Citations (PDF) |
| 710 | Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak | 3.0 | 202 | Citations (PDF) |
| 711 | High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication | 3.0 | 2 | Citations (PDF) |
| 712 | Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques | 2.0 | 91 | Citations (PDF) |
| 713 | Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching | 3.0 | 85 | Citations (PDF) |
| 714 | Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition | 3.0 | 133 | Citations (PDF) |
| 715 | Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching | 3.0 | 49 | Citations (PDF) |
| 716 | Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes | 3.0 | 22 | Citations (PDF) |
| 717 | AlGaN/GaN current aperture vertical electron transistors with regrown channels | 2.0 | 214 | Citations (PDF) |
| 718 | Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5% | 3.0 | 43 | Citations (PDF) |
| 719 | Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN | 3.0 | 14 | Citations (PDF) |
| 720 | Improved quantum efficiency in nonpolar (112̄0) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth | 3.0 | 59 | Citations (PDF) |
| 721 | Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique | 1.9 | 28 | Citations (PDF) |
| 722 | Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching | 1.9 | 95 | Citations (PDF) |
| 723 | A study of regrowth interface and material quality for a novel InP-based architecture | 1.9 | 6 | Citations (PDF) |
| 724 | Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer | 1.9 | 81 | Citations (PDF) |
| 725 | Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design | 2.3 | 22 | Citations (PDF) |
| 726 | MOCVD growth of AlGaN films for solar blind photodetectors | 0.0 | 3 | Citations (PDF) |
| 727 | Generation of coherent acoustic phonons in GaN-based p-n junction | 0.7 | 0 | Citations (PDF) |
| 728 | The growth of N-face GaN by MOCVD: effect of Mg, Si, and In | 1.9 | 34 | Citations (PDF) |
| 729 | High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP | 1.9 | 1 | Citations (PDF) |
| 730 | Preparation of indium nitride micro- and nanostructures by ammonolysis of indium oxide | 7.3 | 66 | Citations (PDF) |
| 731 | Power and Linearity Characteristics of GaN MISFETs on Sapphire Substrate | 3.4 | 36 | Citations (PDF) |
| 732 | Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells | 3.0 | 119 | Citations (PDF) |
| 733 | Nonpolar a-plane p-type GaN and p-n Junction Diodes | 2.0 | 46 | Citations (PDF) |
| 734 | Growth of thick (112¯0) GaN using a metal interlayer | 3.0 | 19 | Citations (PDF) |
| 735 | Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1−xN | 3.0 | 43 | Citations (PDF) |
| 736 | Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing | 3.0 | 26 | Citations (PDF) |
| 737 | High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface Passivation | 3.4 | 109 | Citations (PDF) |
| 738 | Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition | 3.0 | 177 | Citations (PDF) |
| 739 | Gallium Nitride Powders from Ammonolysis: Influence of Reaction Parameters on Structure and Properties | 6.7 | 40 | Citations (PDF) |
| 740 | Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening | 3.0 | 1,292 | Citations (PDF) |
| 741 | Metalorganic chemical vapor deposition of group III nitrides—a discussion of critical issues | 1.9 | 83 | Citations (PDF) |
| 742 | Growth and characteristics of Fe-doped GaN | 1.9 | 86 | Citations (PDF) |
| 743 | Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition | 3.9 | 14 | Citations (PDF) |
| 744 | Variation of structural and optical properties across an AlGaN/GaN HEMT structure directly imaged by cathodoluminescence microscopy | 0.0 | 0 | Citations (PDF) |
| 745 | Blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy | 0.7 | 3 | Citations (PDF) |
| 746 | Si doping effects on the electrical and structural properties of high Al composition AlxGa1−xN films grown by MOCVD | 0.7 | 0 | Citations (PDF) |
| 747 | 336 nm ultraviolet LEDs grown with AlN interlayers for strain reduction | 0.7 | 1 | Citations (PDF) |
| 748 | Structural and electrical characterization ofa-plane GaN grown ona-plane SiC | 0.7 | 20 | Citations (PDF) |
| 749 | Oxygen doping of c-plane GaN by metalorganic chemical vapor deposition | 0.7 | 5 | Citations (PDF) |
| 750 | Observation of huge nonlinear absorption enhancement near exciton resonance in GaN | 3.0 | 17 | Citations (PDF) |
| 751 | High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology | 3.6 | 59 | Citations (PDF) |
| 752 | High-linearity class B power amplifiers in GaN HEMT technology | 2.5 | 16 | Citations (PDF) |
| 753 | Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells | 2.0 | 51 | Citations (PDF) |
| 754 | Refractive index study of AlxGa1−xN films grown on sapphire substrates | 2.0 | 88 | Citations (PDF) |
| 755 | n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550–750 °C | 3.0 | 5 | Citations (PDF) |
| 756 | Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy | 3.0 | 178 | Citations (PDF) |
| 757 | Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films | 3.0 | 57 | Citations (PDF) |
| 758 | Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films | 3.0 | 137 | Citations (PDF) |
| 759 | Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells | 3.0 | 17 | Citations (PDF) |
| 760 | High conductivity modulation doped AlGaN/GaN multiple channel heterostructures | 2.0 | 87 | Citations (PDF) |
| 761 | Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope | 2.0 | 64 | Citations (PDF) |
| 762 | Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor | 3.0 | 12 | Citations (PDF) |
| 763 | Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy | 3.0 | 153 | Citations (PDF) |
| 764 | Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs | 3.4 | 53 | Citations (PDF) |
| 765 | 1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control | 3.0 | 19 | Citations (PDF) |
| 766 | Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures | 2.0 | 233 | Citations (PDF) |
| 767 | Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition | 1.9 | 68 | Citations (PDF) |
| 768 | Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition | 1.9 | 174 | Citations (PDF) |
| 769 | Non-planar Selective Area Growth and Characterization of GaN and AlGaN | 1.9 | 27 | Citations (PDF) |
| 770 | Recombination dynamics of localized excitons in cubic In[sub x]Ga[sub 1−x]N/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate | 1.5 | 48 | Citations (PDF) |
| 771 | Crystallographic wing tilt in laterally overgrown GaN | 2.9 | 8 | Citations (PDF) |
| 772 | Similarities in the Optical Properties of Hexagonal and Cubic InGaN Quantum Wells | 0.1 | 0 | Citations (PDF) |
| 773 | Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN | 3.0 | 171 | Citations (PDF) |
| 774 | Mg-rich precipitates in the p-type doping of InGaN-based laser diodes | 3.0 | 49 | Citations (PDF) |
| 775 | GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design | 3.0 | 38 | Citations (PDF) |
| 776 | Higher efficiency InGaN laser diodes with an improved quantum well capping configuration | 3.0 | 55 | Citations (PDF) |
| 777 | Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy | 3.0 | 12 | Citations (PDF) |
| 778 | Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy | 3.0 | 59 | Citations (PDF) |
| 779 | Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy | 2.0 | 18 | Citations (PDF) |
| 780 | Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys | 3.0 | 194 | Citations (PDF) |
| 781 | Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy | 3.0 | 14 | Citations (PDF) |
| 782 | Chemical Mechanical Polishing of Gallium Nitride | 2.3 | 64 | Citations (PDF) |
| 783 | Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition | 3.0 | 352 | Citations (PDF) |
| 784 | Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition | 3.4 | 67 | Citations (PDF) |
| 785 | Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire | 3.0 | 490 | Citations (PDF) |
| 786 | Femtosecond dynamics of exciton bleaching in bulk GaN at room temperature | 3.0 | 15 | Citations (PDF) |
| 787 | Recombination Dynamics of Localized Excitons in Cubic Phase InxGa1?xN/GaN Multiple Quantum Wells on 3C-SiC/Si (001) | 1.5 | 2 | Citations (PDF) |
| 788 | Nonpolar (11&1macr;0)a-Plane Gallium Nitride Thin Films Grown on (1&1macr;02)r-Plane Sapphire: Heteroepitaxy and Lateral Overgrowth | 0.0 | 21 | Citations (PDF) |
| 789 | Effect of the Nucleation Layer on Stress during Cantilever Epitaxy of GaN on Si (111) | 0.0 | 10 | Citations (PDF) |
| 790 | Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN | 1.9 | 18 | Citations (PDF) |
| 791 | Ultrashort hole capture time in Mg-doped GaN thin films | 3.0 | 13 | Citations (PDF) |
| 792 | Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure | 0.1 | 0 | Citations (PDF) |
| 793 | Universal behavior of the pressure coefficient of the light absorption and emission in InGaN structures | 0.1 | 1 | Citations (PDF) |
| 794 | Spectral Properties of Various Cerium Doped Garnet Phosphors for Application in White GaN-based LEDs | 0.1 | 1 | Citations (PDF) |
| 795 | AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy | 2.0 | 309 | Citations (PDF) |
| 796 | Gallium nitride based transistors | 2.3 | 103 | Citations (PDF) |
| 797 | Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells | 3.0 | 42 | Citations (PDF) |
| 798 | Generation of coherent acoustic phonons in strained GaN thin films | 3.0 | 39 | Citations (PDF) |
| 799 | Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors | 2.0 | 180 | Citations (PDF) |
| 800 | AlGaN/AlN/GaN high-power microwave HEMT | 3.4 | 465 | Citations (PDF) |
| 801 | Spin coherence and dephasing in GaN | 3.4 | 197 | Citations (PDF) |
| 802 | Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN | 3.0 | 51 | Citations (PDF) |
| 803 | Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure | 2.5 | 3 | Citations (PDF) |
| 804 | Capture Kinetics of Electron Traps in MBE-Grown n-GaN | 1.5 | 56 | Citations (PDF) |
| 805 | Observation of Mg-Rich Precipitates in the p-Type Doping of GaN-Based Laser Diodes | 1.5 | 11 | Citations (PDF) |
| 806 | Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN | 1.5 | 24 | Citations (PDF) |
| 807 | Impact of Internal Electric Field and Localization Effect on Quantum Well Excitons in AlGaN/GaN/InGaN Light Emitting Diodes | 0.0 | 74 | Citations (PDF) |
| 808 | Solar-Blind p-GaN/i-AlGaN/n-AlGaN Ultraviolet Photodiodes on SiC Substrate | 0.0 | 15 | Citations (PDF) |
| 809 | Mass Transport Regrowth of GaN for Ohmic Contacts to AlGaN/GaN | 0.0 | 7 | Citations (PDF) |
| 810 | Indium Surfactant Assisted Growth of AlN/GaN Heterostructures by Metal-Organic Chemical Vapor Deposition | 0.0 | 14 | Citations (PDF) |
| 811 | Infrared and Raman-scattering studies in single-crystalline GaN nanowires | 2.7 | 159 | Citations (PDF) |
| 812 | Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy | 1.9 | 19 | Citations (PDF) |
| 813 | Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB | 2.7 | 185 | Citations (PDF) |
| 814 | Selective Area Mass Transport Regrowth of Gallium Nitride | 1.9 | 12 | Citations (PDF) |
| 815 | Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy | 1.9 | 10 | Citations (PDF) |
| 816 | Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN | 1.5 | 16 | Citations (PDF) |
| 817 | Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells | 2.2 | 13 | Citations (PDF) |
| 818 | Investigations of Chemical Vapor Deposition of GaN Using Synchrotron Radiation | 3.1 | 3 | Citations (PDF) |
| 819 | Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems | 1.5 | 101 | Citations (PDF) |
| 820 | Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells | 3.0 | 38 | Citations (PDF) |
| 821 | Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors | 3.0 | 21 | Citations (PDF) |
| 822 | Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells | 3.0 | 11 | Citations (PDF) |
| 823 | Time-resolved photoluminescence ofInxGa1−xN/GaNmultiple quantum well structures: Effect of Si doping in the barriers | 3.4 | 65 | Citations (PDF) |
| 824 | Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of anInxGa1−xN/GaNdouble heterostructure | 3.4 | 18 | Citations (PDF) |
| 825 | Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications | 3.0 | 55 | Citations (PDF) |
| 826 | Band gap bowing and exciton localization in strained cubic InxGa1−xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy | 3.0 | 22 | Citations (PDF) |
| 827 | Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates | 3.0 | 44 | Citations (PDF) |
| 828 | Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors | 3.0 | 37 | Citations (PDF) |
| 829 | Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition | 3.0 | 65 | Citations (PDF) |
| 830 | Influence of pressure on the optical properties ofInxGa1−xNepilayers and quantum structures | 3.4 | 73 | Citations (PDF) |
| 831 | Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states | 3.0 | 17 | Citations (PDF) |
| 832 | Mapping piezoelectric‐field distribution in gallium nitride with scanning second‐harmonic generation microscopy | 2.2 | 22 | Citations (PDF) |
| 833 | Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures | 0.1 | 1 | Citations (PDF) |
| 834 | Blue Diode Lasers | 0.3 | 76 | Citations (PDF) |
| 835 | In situ studies of the effect of silicon on GaN growth modes | 1.9 | 14 | Citations (PDF) |
| 836 | Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates | 1.9 | 19 | Citations (PDF) |
| 837 | Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction | 1.9 | 95 | Citations (PDF) |
| 838 | Transition between the 1×1 and surface structures of GaN in the vapor-phase environment | 2.7 | 10 | Citations (PDF) |
| 839 | Epitaxially-grown GaN junction field effect transistors | 2.7 | 37 | Citations (PDF) |
| 840 | Title is missing! | 3.7 | 16 | Citations (PDF) |
| 841 | SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN | 2.3 | 138 | Citations (PDF) |
| 842 | Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells | 1.9 | 21 | Citations (PDF) |
| 843 | Polarization effects and transport in AlGaN/GaN system | 1.5 | 12 | Citations (PDF) |
| 844 | Heavy doping effects in Mg-doped GaN | 2.0 | 402 | Citations (PDF) |
| 845 | Two-photon absorption study of GaN | 3.0 | 106 | Citations (PDF) |
| 846 | Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures | 3.0 | 39 | Citations (PDF) |
| 847 | Linear and nonlinear optical properties ofInxGa1−xN/GaNheterostructures | 3.4 | 65 | Citations (PDF) |
| 848 | Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy | 3.0 | 48 | Citations (PDF) |
| 849 | Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire | 3.0 | 60 | Citations (PDF) |
| 850 | Depletion region effects in Mg-doped GaN | 2.0 | 83 | Citations (PDF) |
| 851 | High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage | 3.0 | 33 | Citations (PDF) |
| 852 | Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes | 3.0 | 135 | Citations (PDF) |
| 853 | In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN | 3.0 | 57 | Citations (PDF) |
| 854 | Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy | 3.0 | 121 | Citations (PDF) |
| 855 | High breakdown GaN HEMT with overlapping gate structure | 3.4 | 292 | Citations (PDF) |
| 856 | Step bunching on the vicinal GaN(0001) surface | 3.4 | 29 | Citations (PDF) |
| 857 | Scanning second-harmonic/third-harmonic generation microscopy of gallium nitride | 3.0 | 65 | Citations (PDF) |
| 858 | Dislocation reduction in GaN films through selective island growth of InGaN | 3.0 | 11 | Citations (PDF) |
| 859 | Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies | 2.0 | 101 | Citations (PDF) |
| 860 | Layer-by-layer growth of GaN induced by silicon | 3.0 | 36 | Citations (PDF) |
| 861 | Characterization of an AlGaN/GaN two-dimensional electron gas structure | 2.0 | 65 | Citations (PDF) |
| 862 | Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure | 2.0 | 20 | Citations (PDF) |
| 863 | Hydrogen passivation of deep levels in n–GaN | 3.0 | 135 | Citations (PDF) |
| 864 | Measured and calculated radiative lifetime and optical absorption ofInxGa1−xN/GaNquantum structures | 3.4 | 143 | Citations (PDF) |
| 865 | Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors | 3.0 | 1,065 | Citations (PDF) |
| 866 | Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells | 3.0 | 27 | Citations (PDF) |
| 867 | Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings | 0.7 | 14 | Citations (PDF) |
| 868 | Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer | 0.2 | 110 | Citations (PDF) |
| 869 | Study of temperature effects on loss mechanisms in laser diodes with electron stopper layer | 2.2 | 7 | Citations (PDF) |
| 870 | Cl[sub 2] reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors | 1.5 | 41 | Citations (PDF) |
| 871 | AlGaN/GaN HBTs using regrown emitter | 0.7 | 37 | Citations (PDF) |
| 872 | Femtosecond Z-scan measurement of GaN | 3.0 | 54 | Citations (PDF) |
| 873 | Dislocation mediated surface morphology of GaN | 2.0 | 394 | Citations (PDF) |
| 874 | Ultrafast electron dynamics study of GaN | 3.4 | 60 | Citations (PDF) |
| 875 | Thermal conductivity of lateral epitaxial overgrown GaN films | 3.0 | 63 | Citations (PDF) |
| 876 | Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells | 3.0 | 45 | Citations (PDF) |
| 877 | Large interband second-order susceptibilities in InxGa1−xN/GaN quantum wells | 3.0 | 34 | Citations (PDF) |
| 878 | Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride | 3.0 | 85 | Citations (PDF) |
| 879 | Structural and optical characteristics of InxGa1−xN/GaN multiple quantum wells with different In compositions | 3.0 | 38 | Citations (PDF) |
| 880 | High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN | 3.0 | 317 | Citations (PDF) |
| 881 | Surface Structure of GaN(0001) in the Chemical Vapor Deposition Environment | 8.2 | 45 | Citations (PDF) |
| 882 | Observation of growth modes during metal-organic chemical vapor deposition of GaN | 3.0 | 54 | Citations (PDF) |
| 883 | Improvement of Internal Quantum Efficiency in 1.55 µm Laser Diodes with InGaP Electron Stopper Layer | 1.9 | 6 | Citations (PDF) |
| 884 | Optical properties of InGaN quantum wells | 4.2 | 177 | Citations (PDF) |
| 885 | Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures | 2.0 | 170 | Citations (PDF) |
| 886 | Effects of Carrier Localization on the Optical Characteristics of MOCVD-Grown InGaN/GaN Heterostructures | 1.5 | 3 | Citations (PDF) |
| 887 | A Comparison of the Optical Characteristics of AlGaN, GaN, and InGaN Thin Films | 1.5 | 2 | Citations (PDF) |
| 888 | Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells | 1.5 | 3 | Citations (PDF) |
| 889 | Optical Spectroscopy of InGaN/GaN Quantum Wells | 1.5 | 16 | Citations (PDF) |
| 890 | Influence of Barrier Doping and Barrier Composition on Optical Gain in (In,Ga)N MQWs | 1.5 | 3 | Citations (PDF) |
| 891 | Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes | 0.0 | 10 | Citations (PDF) |
| 892 | Properties of Quantum Well Excitons in GaN/AlGaN and InGaN/GaN/AlGaN UV, Blue, Green, and Amber Light Emitting Diode Structures | 0.0 | 1 | Citations (PDF) |
| 893 | High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration | 2.0 | 35 | Citations (PDF) |
| 894 | High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy | 3.0 | 92 | Citations (PDF) |
| 895 | Polarization-enhanced Mg doping of AlGaN/GaN superlattices | 3.0 | 163 | Citations (PDF) |
| 896 | Indium tin oxide contacts to gallium nitride optoelectronic devices | 3.0 | 234 | Citations (PDF) |
| 897 | Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices | 3.0 | 269 | Citations (PDF) |
| 898 | Scanning tunneling microscope-induced luminescence of GaN at threading dislocations | 1.5 | 28 | Citations (PDF) |
| 899 | Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes | 3.0 | 31 | Citations (PDF) |
| 900 | Low-temperature scanning tunneling microscope-induced luminescence of an InGaN/GaN multiquantum well | 3.0 | 18 | Citations (PDF) |
| 901 | Photoluminescence and photoluminescence excitation spectra of In/sub 0.2/Ga/sub 0.8/N-GaN quantum wells: comparison between experimental and theoretical studies | 1.3 | 15 | Citations (PDF) |
| 902 | Coupling of InGaN quantum-well photoluminescence to silver surface plasmons | 3.4 | 321 | Citations (PDF) |
| 903 | AlGaN/GaN heterojunction bipolar transistor | 3.4 | 117 | Citations (PDF) |
| 904 | Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy | 2.0 | 417 | Citations (PDF) |
| 905 | Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth | 3.0 | 162 | Citations (PDF) |
| 906 | High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers | 3.0 | 107 | Citations (PDF) |
| 907 | Growth and properties of InGaN nanoscale islands on GaN | 1.9 | 34 | Citations (PDF) |
| 908 | Spatial control of InGaN luminescence by MOCVD selective epitaxy | 1.9 | 19 | Citations (PDF) |
| 909 | Dislocation generation in GaN heteroepitaxy | 1.9 | 275 | Citations (PDF) |
| 910 | Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition | 1.9 | 100 | Citations (PDF) |
| 911 | Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures | 3.0 | 451 | Citations (PDF) |
| 912 | Improved compositional uniformity of InGaAsP grown by MOCVD through modification of the susceptor temperature profile | 1.9 | 7 | Citations (PDF) |
| 913 | Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD | 1.9 | 31 | Citations (PDF) |
| 914 | MOVPE growth and characterization of Mg-doped GaN | 1.9 | 58 | Citations (PDF) |
| 915 | Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells | 1.9 | 71 | Citations (PDF) |
| 916 | GaN microwave electronics | 3.6 | 219 | Citations (PDF) |
| 917 | Cleaved and etched facet nitride laser diodes | 2.8 | 13 | Citations (PDF) |
| 918 | Spiral Growth of InGaN Nanoscale Islands on GaN | 1.9 | 54 | Citations (PDF) |
| 919 | Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells | 3.0 | 39 | Citations (PDF) |
| 920 | High Al-content AlGaN/GaN MODFETs for ultrahigh performance | 3.4 | 263 | Citations (PDF) |
| 921 | Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays | 3.0 | 23 | Citations (PDF) |
| 922 | The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition | 1.9 | 101 | Citations (PDF) |
| 923 | Optical Properties of GaAs Confined in the Pores of MCM-41 | 2.7 | 104 | Citations (PDF) |
| 924 | Electrical characterization of GaN p-n junctions with and without threading dislocations | 3.0 | 349 | Citations (PDF) |
| 925 | Suppressed modal interference switches with integrated curved amplifiers for scaleable photonic crossconnects | 1.8 | 21 | Citations (PDF) |
| 926 | Tunable sampled-grating DBR lasers with integrated wavelength monitors | 1.8 | 29 | Citations (PDF) |
| 927 | Compact, 4 x 4 InGaAsP-InP optical crossconnect with a scaleable architecture | 1.8 | 22 | Citations (PDF) |
| 928 | “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells | 3.0 | 698 | Citations (PDF) |
| 929 | Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition | 3.0 | 229 | Citations (PDF) |
| 930 | Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD | 0.2 | 80 | Citations (PDF) |
| 931 | Improvement of GaN-based laser diode facets by FIB polishing | 0.7 | 28 | Citations (PDF) |
| 932 | GaN field emitter array diode with integrated anode | 1.5 | 38 | Citations (PDF) |
| 933 | Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering | 3.0 | 39 | Citations (PDF) |
| 934 | Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells | 3.0 | 443 | Citations (PDF) |
| 935 | Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition | 3.0 | 259 | Citations (PDF) |
| 936 | High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells | 3.0 | 59 | Citations (PDF) |
| 937 | Measurement of gain current relations for InGaN multiple quantum wells | 3.0 | 9 | Citations (PDF) |
| 938 | Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells | 3.0 | 17 | Citations (PDF) |
| 939 | Catastrophic optical damage in GaInN multiple quantum wells | 3.0 | 9 | Citations (PDF) |
| 940 | High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts | 3.0 | 68 | Citations (PDF) |
| 941 | Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence | 3.0 | 81 | Citations (PDF) |
| 942 | Pump-probe spectroscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN | 3.0 | 34 | Citations (PDF) |
| 943 | Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence | 3.0 | 13 | Citations (PDF) |
| 944 | Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes | 3.0 | 67 | Citations (PDF) |
| 945 | Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells | 3.0 | 98 | Citations (PDF) |
| 946 | Substrate Reactivity and “Controlled Contamination” in Metalorganic Chemical Vapor Deposition of GaN on Sapphire | 1.9 | 16 | Citations (PDF) |
| 947 | Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers | 1.9 | 34 | Citations (PDF) |
| 948 | Role of defect diffusion in the InP damage profile | 1.5 | 11 | Citations (PDF) |
| 949 | Reconfigurable optical properties in InGaN/GaN quantum wells | 3.0 | 14 | Citations (PDF) |
| 950 | Gain spectroscopy on InGaN/GaN quantum well diodes | 3.0 | 64 | Citations (PDF) |
| 951 | Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration | 2.0 | 12 | Citations (PDF) |
| 952 | Femtosecond studies of carrier dynamics in InGaN | 3.0 | 83 | Citations (PDF) |
| 953 | Ballistic electron emission microscopy study of transport in GaN thin films | 3.0 | 29 | Citations (PDF) |
| 954 | Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature | 3.0 | 55 | Citations (PDF) |
| 955 | MOCVD Growth of High Output Power Ingan Multiple Quantum Well Light Emitting Diode | 0.1 | 12 | Citations (PDF) |
| 956 | -Pulsed- Operation of -Cleaved-Facet- InGaN Laser -Diodes- | 0.1 | 7 | Citations (PDF) |
| 957 | Substrate Surface Treatments and “Controlled Contamination” in GaN / Sapphire MOCVD | 0.1 | 3 | Citations (PDF) |
| 958 | Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz | 3.4 | 93 | Citations (PDF) |
| 959 | Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V | 3.4 | 172 | Citations (PDF) |
| 960 | Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures | 2.0 | 47 | Citations (PDF) |
| 961 | White light from InGaN/conjugated polymer hybrid light-emitting diodes | 3.0 | 196 | Citations (PDF) |
| 962 | Demonstration of InP-InGaAsP vertical grating-assisted codirectional coupler filters and receivers with tapered coupling coefficient distributions | 1.8 | 6 | Citations (PDF) |
| 963 | Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy | 2.0 | 400 | Citations (PDF) |
| 964 | Gallium-nitride-based materials for blue to ultraviolet optoelectronics devices | 9.6 | 104 | Citations (PDF) |
| 965 | Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements | 3.0 | 734 | Citations (PDF) |
| 966 | Integration of semiconductor laser amplifiers with sampled grating tunable lasers for WDM applications | 2.8 | 13 | Citations (PDF) |
| 967 | Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques | 2.8 | 21 | Citations (PDF) |
| 968 | Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition | 1.9 | 68 | Citations (PDF) |
| 969 | Selective area epitaxy of GaN for electron field emission devices | 1.9 | 43 | Citations (PDF) |
| 970 | Flow modulation epitaxy of indium gallium nitride | 2.3 | 22 | Citations (PDF) |
| 971 | Accurate mobility and carrier concentration analysis for GaN | 2.3 | 87 | Citations (PDF) |
| 972 | Low resistance ohmic contact to n-GaN with a separate layer method | 1.1 | 47 | Citations (PDF) |
| 973 | Selective-area regrowth of GaN field emission tips | 1.1 | 46 | Citations (PDF) |
| 974 | High power AlGaN/GaN HEMTs for microwave applications | 1.1 | 77 | Citations (PDF) |
| 975 | Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition | 3.0 | 266 | Citations (PDF) |
| 976 | Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition | 1.9 | 96 | Citations (PDF) |
| 977 | Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films | 3.0 | 814 | Citations (PDF) |
| 978 | Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN | 3.0 | 232 | Citations (PDF) |
| 979 | Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3 | 2.0 | 418 | Citations (PDF) |
| 980 | Measured microwave power performance of AlGaN/GaN MODFET | 3.4 | 140 | Citations (PDF) |
| 981 | Modeling and Control of a Metalorganic Chemical Vapor Deposition Process for III-V Compound Semiconductor Epitaxy | 0.3 | 1 | Citations (PDF) |
| 982 | InP-based multiple quantum well structures grown with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP): Effects of growth interruptions on structural and optical properties | 2.3 | 3 | Citations (PDF) |
| 983 | Control of III–V epitaxy in a metalorganic chemical vapor deposition process: impact of source flow control on composition and thickness | 1.9 | 16 | Citations (PDF) |
| 984 | Formation of self‐assembled InP islands on a GaInP/GaAs(311)A surface | 3.0 | 25 | Citations (PDF) |
| 985 | Cleaved GaN facets by wafer fusion of GaN to InP | 3.0 | 24 | Citations (PDF) |
| 986 | Low interface trap density for remote plasma deposited SiO2 on n‐type GaN | 3.0 | 180 | Citations (PDF) |
| 987 | Conduction band offsets in ordered‐GaInP/GaAs heterostructures studied by ballistic‐electron‐emission microscopy | 3.0 | 47 | Citations (PDF) |
| 988 | Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors | 3.0 | 345 | Citations (PDF) |
| 989 | Radiative recombination lifetime measurements of InGaN single quantum well | 3.0 | 83 | Citations (PDF) |
| 990 | Photocurrent decay in n‐type GaN thin films | 3.0 | 39 | Citations (PDF) |
| 991 | 45 nm wavelength tuning range of an InP/InGaAsP photonic integrated tunable receiver | 3.0 | 3 | Citations (PDF) |
| 992 | Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process | 0.1 | 0 | Citations (PDF) |
| 993 | On the interface resistance of regrown GaInAs on InP | 1.1 | 1 | Citations (PDF) |
| 994 | High performance AlAs/GaXIn1-xAs resonant tunneling diodes by metalorganic chemical vapor deposition | 2.3 | 4 | Citations (PDF) |
| 995 | Effects of deposition rate on the size of self-assembled InP islands formed on GaInP/GaAs(100) surfaces | 2.3 | 9 | Citations (PDF) |
| 996 | Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN | 2.3 | 98 | Citations (PDF) |
| 997 | From research to manufacture—The evolution of MOCVD | 2.0 | 5 | Citations (PDF) |
| 998 | Analysis of InP etched surfaces using metalorganic chemical vapor deposition regrown quantum well structures | 1.5 | 5 | Citations (PDF) |
| 999 | Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire | 3.0 | 316 | Citations (PDF) |
| 1000 | Lasing Characteristics of InGaP/InGaAlP Visible Lasers Grown by Metalorganic Chemical Vapor Deposition with Tertiarybutylphosphine (TBP) | 1.9 | 4 | Citations (PDF) |
| 1001 | Ultrahigh speed performance of a quantum well laser at cryogenic temperatures | 3.0 | 14 | Citations (PDF) |
| 1002 | GaxIn1−xAs/AlAs resonant tunneling diodes grown by atmospheric pressure metalorganic chemical vapor deposition | 3.0 | 11 | Citations (PDF) |
| 1003 | Tertiarybutylarsine and tertiarybutylphosphine for the MOCVD growth of low threshold 1.55 μm InxGa1-xAs/InP quantum-well lasers | 2.3 | 23 | Citations (PDF) |
| 1004 | High performance InP JFETs grown by MOCVD using tertiarybutylphosphine | 2.3 | 3 | Citations (PDF) |
| 1005 | GaInAs/GaInP Double Barrier Structures: Growth and Application in Tunneling Diodes | 0.1 | 4 | Citations (PDF) |
| 1006 | Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces | 3.0 | 1,742 | Citations (PDF) |
| 1007 | Strained GaInAsP single‐quantum‐well lasers grown with tertiarybutylarsine and tertiarybutylphosphine | 3.0 | 12 | Citations (PDF) |
| 1008 | Photoluminescence Studies of a Quantum Well Modulated by Faceting on Gaas (110) Surfaces | 0.1 | 0 | Citations (PDF) |
| 1009 | Epitaxial AlGaAs/AlAs distributed Bragg reflectors for green (550 nm) lightwaves | 0.7 | 4 | Citations (PDF) |
| 1010 | Minority‐carrier lifetimes in undoped AlGaAs/GaAs multiple quantum wells | 3.0 | 31 | Citations (PDF) |
| 1011 | Reaction Mechanisms in the Thermal Decomposition of Triethylarsenic and Diethylarsine | 3.1 | 8 | Citations (PDF) |
| 1012 | GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy | 3.0 | 80 | Citations (PDF) |
| 1013 | The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy | 0.1 | 3 | Citations (PDF) |
| 1014 | Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (11\bar22) Gallium Nitride Substrates | 2.1 | 45 | Citations (PDF) |
| 1015 | Compositional Dependence of Nonpolarm-Plane InxGa1-xN/GaN Light Emitting Diodes | 2.1 | 56 | Citations (PDF) |
| 1016 | Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures | 2.1 | 74 | Citations (PDF) |
| 1017 | Correlation between Optical Polarization and Luminescence Morphology of (11\bar22)-Oriented InGaN/GaN Quantum-Well Structures | 2.1 | 29 | Citations (PDF) |
| 1018 | Blue-Green InGaN/GaN Laser Diodes on Miscutm-Plane GaN Substrate | 2.1 | 57 | Citations (PDF) |
| 1019 | Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding | 2.1 | 37 | Citations (PDF) |
| 1020 | Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors | 2.1 | 9 | Citations (PDF) |
| 1021 | Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 1\bar2 2) Plane Gallium Nitrides | 2.1 | 25 | Citations (PDF) |
| 1022 | Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror | 2.1 | 5 | Citations (PDF) |
| 1023 | III-nitride thin film liftoff using electrochemical etching | 3.0 | 4 | Citations (PDF) |
| 1024 | Recent Advancements in N-polar GaN HEMT Technology | 2.1 | 5 | Citations (PDF) |
| 1025 | Green (524 nm) InGaN/GaN laser diodes with nano-porous cladding and deep-ridge waveguiding | 3.0 | 0 | Citations (PDF) |
| 1026 | Thermally Resilient InGaN/GaN MicroLEDs Maintaining Narrowband Emission to 250 °C | 3.4 | 0 | Citations (PDF) |
| 1027 | Monolithic transfer of thin-film micro-LEDs via electrochemical etching | 3.0 | 1 | Citations (PDF) |
| 1028 | AlGaN-Based UV LEDs with High Wall-Plug Efficiency | 3.4 | 0 | Citations (PDF) |
