| 1 | Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes | 2.3 | 7 | Citations (PDF) |
| 2 | Unexpected origin of the quantum efficiency reduction in long-wavelength
(
In
,
Ga
)
N
light-emitting diodes | 2.8 | 7 | Citations (PDF) |
| 3 | Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy | 2.3 | 2 | Citations (PDF) |
| 4 | Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs | 2.3 | 2 | Citations (PDF) |
| 5 | Structural and electrical properties of MOCVD-grown scandium nitride thin films on sapphire, Si, GaN, and SiC | 2.3 | 3 | Citations (PDF) |
| 6 | Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs | 2.2 | 2 | Citations (PDF) |
| 7 | Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation | 1.2 | 13 | Citations (PDF) |
| 8 | Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs | 2.3 | 9 | Citations (PDF) |
| 9 | Dynamics of carrier injection through V-defects in long wavelength GaN LEDs | 2.3 | 14 | Citations (PDF) |
| 10 | Pure edge-dislocation half-loops in low-temperature
GaN
for V-defect formation | 2.8 | 6 | Citations (PDF) |
| 11 | Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes | 2.3 | 11 | Citations (PDF) |
| 12 | Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects | 2.3 | 11 | Citations (PDF) |
| 13 | Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence | 1.6 | 12 | Citations (PDF) |
| 14 | High external quantum efficiency in ultra-small amber InGaN microLEDs scaled to 1 μm | 2.3 | 14 | Citations (PDF) |
| 15 | Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges | 1.0 | 5 | Citations (PDF) |
| 16 | Detection of hot electrons originating from an upper valley at
∼1.7eV
above the
Γ
valley in wurtzite GaN using electron emission spectroscopy | 2.4 | 5 | Citations (PDF) |
| 17 | Structure of V-defects in long wavelength GaN-based light emitting diodes | 1.6 | 33 | Citations (PDF) |
| 18 | Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition | 2.3 | 7 | Citations (PDF) |
| 19 | Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers | 1.6 | 8 | Citations (PDF) |
| 20 | N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization | 1.8 | 0 | Citations (PDF) |
| 21 | InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5% | 1.6 | 14 | Citations (PDF) |
| 22 | Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror | 1.3 | 10 | Citations (PDF) |
| 23 | Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments | 1.6 | 17 | Citations (PDF) |
| 24 | Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6% | 4.1 | 54 | Citations (PDF) |
| 25 | Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes | 2.3 | 19 | Citations (PDF) |
| 26 | Metasurface Light-Emitting Diodes with Directional and Focused Emission | 6.2 | 29 | Citations (PDF) |
| 27 | 10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN | 2.3 | 12 | Citations (PDF) |
| 28 | Nano-porous GaN cladding and scattering loss in edge emitting laser diodes | 2.3 | 30 | Citations (PDF) |
| 29 | Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2% | 2.3 | 23 | Citations (PDF) |
| 30 | Polarization-Enhanced p-AlGaN Superlattice Optimization for GUV LED | 0.9 | 20 | Citations (PDF) |
| 31 | Study of Pore Geometry and Dislocations in Porous GaN Based Pseudo-Substrates Using TEM | 0.9 | 8 | Citations (PDF) |
| 32 | Designs for III-nitride edge-emitting laser diodes with tunnel junction contacts for low internal optical absorption loss | 0.6 | 1 | Citations (PDF) |
| 33 | Computational design and optimization of nanostructured AlN deep-UV grating reflectors | 2.3 | 2 | Citations (PDF) |
| 34 | Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices | 2.3 | 7 | Citations (PDF) |
| 35 | Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition | 2.3 | 4 | Citations (PDF) |
| 36 | Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact | 2.3 | 57 | Citations (PDF) |
| 37 | Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices | 0.9 | 10 | Citations (PDF) |
| 38 | Progress of InGaN-Based Red Micro-Light Emitting Diodes | 1.8 | 37 | Citations (PDF) |
| 39 | Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes | 1.6 | 22 | Citations (PDF) |
| 40 | Guest Editorial Introduction to the Special Issue on Semiconductor Optoelectronic Materials and Devices | 0.9 | 0 | Citations (PDF) |
| 41 | Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer | 1.8 | 13 | Citations (PDF) |
| 42 | Improved Vertical Carrier Transport for Green III-Nitride LEDs Using
(In,Ga)N
Alloy Quantum Barriers | 2.8 | 14 | Citations (PDF) |
| 43 | Designing Highly Directional Luminescent Phased-Array Metasurfaces with Reciprocity-Based Simulations | 3.4 | 9 | Citations (PDF) |
| 44 | Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells | 2.3 | 10 | Citations (PDF) |
| 45 | Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer | 1.8 | 15 | Citations (PDF) |
| 46 | Demonstration of C-Plane InGaN-Based Blue Laser Diodes Grown on a Strain-Relaxed Template | 1.8 | 6 | Citations (PDF) |
| 47 | Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon | 1.8 | 21 | Citations (PDF) |
| 48 | InGaN Based C-Plane Blue Laser Diodes on Strain Relaxed Template with Reduced Absorption Loss | 1.8 | 1 | Citations (PDF) |
| 49 | Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes | 2.3 | 20 | Citations (PDF) |
| 50 | Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-emitting diodes: epitaxy optimization and light extraction simulation | 1.4 | 10 | Citations (PDF) |
| 51 | Study of surface roughness of lifted-off epitaxial lateral overgrown GaN layers for the n-DBR mirror of a III-nitride vertical-cavity surface emitting laser | 1.6 | 7 | Citations (PDF) |
| 52 | Blue semipolar InGaN microcavity light-emitting diode with varying cavity lengths from 113 to 290 nm | 1.6 | 3 | Citations (PDF) |
| 53 | InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications | 2.0 | 5 | Citations (PDF) |
| 54 | Damage-free substrate removal technique: wet undercut etching of semipolar
20
2
¯
1
laser structures by incorporation of un/relaxed | 1.2 | 0 | Citations (PDF) |
| 55 | Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates | 1.7 | 21 | Citations (PDF) |
| 56 | 2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature | 2.3 | 14 | Citations (PDF) |
| 57 | Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control | 2.3 | 25 | Citations (PDF) |
| 58 | Light-emitting metalenses and meta-axicons for focusing and beaming of spontaneous emission | 10.8 | 72 | Citations (PDF) |
| 59 | Growth by MOCVD and photoluminescence of semipolar (202¯1¯) InN quantum dashes | 1.7 | 4 | Citations (PDF) |
| 60 | Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control | 2.3 | 14 | Citations (PDF) |
| 61 | Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments | 1.6 | 25 | Citations (PDF) |
| 62 | Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED | 0.7 | 2 | Citations (PDF) |
| 63 | Metalorganic chemical vapor deposition of InN quantum dots and nanostructures | 14.5 | 24 | Citations (PDF) |
| 64 | N-face GaN substrate roughening for improved performance GaN-on-GaN LED | 0.7 | 8 | Citations (PDF) |
| 65 | Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm | 2.3 | 72 | Citations (PDF) |
| 66 | Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio | 1.8 | 25 | Citations (PDF) |
| 67 | High internal quantum efficiency of long wavelength InGaN quantum wells | 2.3 | 18 | Citations (PDF) |
| 68 | Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers | 2.3 | 46 | Citations (PDF) |
| 69 | Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature | 1.6 | 49 | Citations (PDF) |
| 70 | Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐ to the Micrometer Scale | 1.3 | 16 | Citations (PDF) |
| 71 | Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration | 1.0 | 29 | Citations (PDF) |
| 72 | Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers | 1.8 | 9 | Citations (PDF) |
| 73 | Improving backside (N-face) GaN substrate roughening by pre-annealing for GaN-on-GaN LED | 3.0 | 6 | Citations (PDF) |
| 74 | Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package | 1.2 | 4 | Citations (PDF) |
| 75 | High efficiency blue InGaN microcavity light-emitting diode with a 205 nm ultra-short cavity | 2.3 | 6 | Citations (PDF) |
| 76 | MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates | 1.4 | 10 | Citations (PDF) |
| 77 | Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays | 1.6 | 141 | Citations (PDF) |
| 78 | Optical and electrical characterizations of micro-LEDs grown on lower defect density epitaxial layers | 2.3 | 16 | Citations (PDF) |
| 79 | InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates | 1.8 | 45 | Citations (PDF) |
| 80 | Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition | 2.3 | 8 | Citations (PDF) |
| 81 | Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers | 2.3 | 19 | Citations (PDF) |
| 82 | Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine | 1.8 | 4 | Citations (PDF) |
| 83 | High-temperature electroluminescence properties of InGaN red 40 × 40
μ
m2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2% | 2.3 | 45 | Citations (PDF) |
| 84 | Semipolar {202¯1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing | 1.8 | 4 | Citations (PDF) |
| 85 | Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well | 0.2 | 0 | Citations (PDF) |
| 86 | Effect Of AlGaN/GaN Strained Layer Superlattice Period On InGaN MQW Laser Diodes | 0.2 | 2 | Citations (PDF) |
| 87 | MOCVD Growth and Characterization of InN Quantum Dots | 1.0 | 10 | Citations (PDF) |
| 88 | Inhomogeneous Current Injection and Filamentary Lasing of Semipolar (2021¯) Blue GaN‐Based Vertical‐Cavity Surface‐Emitting Lasers with Buried Tunnel Junctions | 1.2 | 18 | Citations (PDF) |
| 89 | Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication | 11.9 | 61 | Citations (PDF) |
| 90 | Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes | 1.5 | 166 | Citations (PDF) |
| 91 | Semipolar (
20
21
¯
) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication | 1.6 | 48 | Citations (PDF) |
| 92 | Research Toward a Heterogeneously Integrated InGaN Laser on Silicon | 1.2 | 16 | Citations (PDF) |
| 93 | Lift-off of semipolar blue and green III-nitride LEDs grown on free-standing GaN | 2.3 | 2 | Citations (PDF) |
| 94 | High polarization and fast modulation speed of dual wavelengths electroluminescence from semipolar (20-21) micro light-emitting diodes with indium tin oxide surface grating | 2.3 | 20 | Citations (PDF) |
| 95 | Color-tunable &lt;10
μ
m square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates | 2.3 | 64 | Citations (PDF) |
| 96 | Transmission Geometry Laser Lighting with a Compact Emitter | 1.2 | 4 | Citations (PDF) |
| 97 | Quasiordered, subwavelength TiO2 hole arrays with tunable, omnidirectional color response | 1.5 | 4 | Citations (PDF) |
| 98 | Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN | 2.3 | 19 | Citations (PDF) |
| 99 | 7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector | 1.3 | 21 | Citations (PDF) |
| 100 | Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition | 1.6 | 5 | Citations (PDF) |
| 101 | Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces | 23.7 | 120 | Citations (PDF) |
| 102 | Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures | 11.9 | 5 | Citations (PDF) |
| 103 | Flow modulation metalorganic vapor phase epitaxy of GaN at temperatures below 600 ºC | 1.4 | 11 | Citations (PDF) |
| 104 | Demonstration of Efficient Semipolar 410 nm Violet Laser Diodes Heteroepitaxially Grown on High-Quality Low-Cost GaN/Sapphire Substrates | 3.3 | 9 | Citations (PDF) |
| 105 | Room-Temperature Continuous-Wave Electrically Driven Semipolar (202̅1) Blue Laser Diodes Heteroepitaxially Grown on a Sapphire Substrate | 4.1 | 13 | Citations (PDF) |
| 106 | Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates | 2.3 | 51 | Citations (PDF) |
| 107 | An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface | 1.6 | 5 | Citations (PDF) |
| 108 | High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth | 1.3 | 18 | Citations (PDF) |
| 109 | Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation | 2.3 | 183 | Citations (PDF) |
| 110 | Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1
μ
m in diameter | 2.3 | 252 | Citations (PDF) |
| 111 | AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates | 4.1 | 86 | Citations (PDF) |
| 112 | Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage | 1.4 | 27 | Citations (PDF) |
| 113 | Barriers to carrier transport in multiple quantum well nitride-based
c
-plane green light emitting diodes | 1.8 | 28 | Citations (PDF) |
| 114 | Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate | 1.3 | 6 | Citations (PDF) |
| 115 | Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments | 2.3 | 164 | Citations (PDF) |
| 116 | Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate | 2.3 | 17 | Citations (PDF) |
| 117 | 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates | 2.3 | 19 | Citations (PDF) |
| 118 | Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition | 2.3 | 35 | Citations (PDF) |
| 119 | Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors | 2.3 | 33 | Citations (PDF) |
| 120 | Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length | 2.3 | 13 | Citations (PDF) |
| 121 | Fabrication and chemical lift-off of sub-micron scale III-nitride LED structures | 2.3 | 13 | Citations (PDF) |
| 122 | Color-changing refractive index sensor based on Fano-resonant filtering of optical modes in a porous dielectric Fabry-Pérot microcavity | 2.3 | 6 | Citations (PDF) |
| 123 | High performance of a semipolar InGaN laser with a phase-shifted embedded hydrogen silsesquioxane (HSQ) grating | 2.2 | 11 | Citations (PDF) |
| 124 | Superlattice hole injection layers for UV LEDs grown on SiC | 1.7 | 17 | Citations (PDF) |
| 125 | Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN | 2.1 | 36 | Citations (PDF) |
| 126 | Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire | 0.2 | 0 | Citations (PDF) |
| 127 | Toward heteroepitaxially grown semipolar GaN laser diodes under electrically injected continuous-wave mode: From materials to lasers | 6.8 | 10 | Citations (PDF) |
| 128 | Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation | 1.6 | 245 | Citations (PDF) |
| 129 | High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects | 4.1 | 45 | Citations (PDF) |
| 130 | Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition | 2.3 | 41 | Citations (PDF) |
| 131 | Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN | 1.4 | 42 | Citations (PDF) |
| 132 | Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition | 1.4 | 6 | Citations (PDF) |
| 133 | Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template | 2.4 | 10 | Citations (PDF) |
| 134 | Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition | 2.3 | 15 | Citations (PDF) |
| 135 | Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors | 1.4 | 11 | Citations (PDF) |
| 136 | Interwell carrier transport in InGaN/(In)GaN multiple quantum wells | 2.3 | 32 | Citations (PDF) |
| 137 | Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates | 5.5 | 15 | Citations (PDF) |
| 138 | Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal | 1.7 | 20 | Citations (PDF) |
| 139 | Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC | 1.4 | 38 | Citations (PDF) |
| 140 | Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region | 1.2 | 15 | Citations (PDF) |
| 141 | Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization | 1.7 | 9 | Citations (PDF) |
| 142 | Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes | 2.3 | 15 | Citations (PDF) |
| 143 | Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN | 2.3 | 20 | Citations (PDF) |
| 144 | Demonstration of blue semipolar (202¯1¯) GaN-based vertical-cavity surface-emitting lasers | 2.3 | 22 | Citations (PDF) |
| 145 | Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template | 2.3 | 53 | Citations (PDF) |
| 146 | Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate | 2.3 | 11 | Citations (PDF) |
| 147 | Strain relaxation of InGaN/GaN multi-quantum well light emitters via nanopatterning | 2.3 | 24 | Citations (PDF) |
| 148 | Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts | 2.3 | 43 | Citations (PDF) |
| 149 | Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC | 2.3 | 24 | Citations (PDF) |
| 150 | Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating | 2.2 | 33 | Citations (PDF) |
| 151 | Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization | 2.2 | 3 | Citations (PDF) |
| 152 | Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction | 1.6 | 33 | Citations (PDF) |
| 153 | On the optical polarization properties of semipolar (202¯1) and (202¯1¯) InGaN/GaN quantum wells | 1.6 | 9 | Citations (PDF) |
| 154 | Stable, Heat-Conducting Phosphor Composites for High-Power Laser Lighting | 5.5 | 159 | Citations (PDF) |
| 155 | Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN | 1.6 | 22 | Citations (PDF) |
| 156 | Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes | 2.3 | 69 | Citations (PDF) |
| 157 | Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures | 1.6 | 10 | Citations (PDF) |
| 158 | Semipolar $(20\bar{2}1)$ GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations | 1.6 | 16 | Citations (PDF) |
| 159 | Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition | 1.6 | 70 | Citations (PDF) |
| 160 | Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes | 4.7 | 6 | Citations (PDF) |
| 161 | Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition | 1.6 | 5 | Citations (PDF) |
| 162 | Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact | 2.3 | 52 | Citations (PDF) |
| 163 | Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers | 1.7 | 21 | Citations (PDF) |
| 164 | Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy | 4.1 | 31 | Citations (PDF) |
| 165 | High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum | 1.4 | 3 | Citations (PDF) |
| 166 | Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes | 2.3 | 31 | Citations (PDF) |
| 167 | Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers | 2.3 | 29 | Citations (PDF) |
| 168 | Development of high performance green c-plane III-nitride light-emitting diodes | 2.3 | 56 | Citations (PDF) |
| 169 | Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications | 2.3 | 27 | Citations (PDF) |
| 170 | Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes | 2.3 | 7 | Citations (PDF) |
| 171 | Investigation of Mg
δ
-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD | 1.4 | 12 | Citations (PDF) |
| 172 | An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures | 1.7 | 6 | Citations (PDF) |
| 173 | High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition | 2.3 | 337 | Citations (PDF) |
| 174 | GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition | 1.6 | 64 | Citations (PDF) |
| 175 | Exploring metalorganic chemical vapor deposition of Si-alloyed Al 2 O 3 dielectrics using disilane | 1.7 | 6 | Citations (PDF) |
| 176 | Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films | 1.9 | 8 | Citations (PDF) |
| 177 | Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system | 1.6 | 34 | Citations (PDF) |
| 178 | Optoelectronic properties of doped hydrothermal ZnO thin films | 1.2 | 4 | Citations (PDF) |
| 179 | Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs | 1.6 | 246 | Citations (PDF) |
| 180 | Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency | 2.3 | 42 | Citations (PDF) |
| 181 | Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography | 2.3 | 37 | Citations (PDF) |
| 182 | Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices | 1.6 | 18 | Citations (PDF) |
| 183 | Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser | 1.6 | 16 | Citations (PDF) |
| 184 | Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates | 5.5 | 54 | Citations (PDF) |
| 185 | Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition | 1.4 | 7 | Citations (PDF) |
| 186 | 444 nm InGaN light emitting diodes on low-defect-density $(11\bar{2}2)$ GaN templates on patterned sapphire | 1.6 | 12 | Citations (PDF) |
| 187 | Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs | 1.6 | 13 | Citations (PDF) |
| 188 | Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN | 1.6 | 5 | Citations (PDF) |
| 189 | Analysis of Vegard’s law for lattice matching InxAl1−xN to GaN by metalorganic chemical vapor deposition | 1.7 | 17 | Citations (PDF) |
| 190 | Growth of high purity N-polar (In,Ga)N films | 1.7 | 25 | Citations (PDF) |
| 191 | Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates | 1.6 | 15 | Citations (PDF) |
| 192 | Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring | 2.3 | 15 | Citations (PDF) |
| 193 | Semipolar III-nitride laser diodes with zinc oxide cladding | 2.3 | 9 | Citations (PDF) |
| 194 | Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors | 2.3 | 94 | Citations (PDF) |
| 195 | High wall-plug efficiency blue III-nitride LEDs designed for low current density operation | 2.3 | 45 | Citations (PDF) |
| 196 | Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence | 1.7 | 12 | Citations (PDF) |
| 197 | Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells | 2.3 | 17 | Citations (PDF) |
| 198 | Chapter 5. Assessing the Need for High Impact Technology Research, Development & Deployment for Mitigating Climate Change | 1.5 | 3 | Citations (PDF) |
| 199 | High luminous efficacy green light-emitting diodes with AlGaN cap layer | 2.3 | 86 | Citations (PDF) |
| 200 | High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth | 2.3 | 58 | Citations (PDF) |
| 201 | Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates | 2.3 | 42 | Citations (PDF) |
| 202 | Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes | 2.3 | 15 | Citations (PDF) |
| 203 | Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission | 1.6 | 6 | Citations (PDF) |
| 204 | Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting | 1.0 | 33 | Citations (PDF) |
| 205 | Dynamic characteristics of 410 nm semipolar (202¯1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz | 2.3 | 41 | Citations (PDF) |
| 206 | Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction | 2.3 | 75 | Citations (PDF) |
| 207 | Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202¯1¯) III-nitride laser diodes with chemically assisted ion beam etched facets | 2.3 | 28 | Citations (PDF) |
| 208 | Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes | 1.6 | 34 | Citations (PDF) |
| 209 | Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy | 2.3 | 11 | Citations (PDF) |
| 210 | High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications | 2.2 | 60 | Citations (PDF) |
| 211 | Effects of active region design on gain and carrier injection and transport of CW
semipolar InGaN laser diodes | 1.6 | 9 | Citations (PDF) |
| 212 | Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave | 1.7 | 21 | Citations (PDF) |
| 213 | Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact | 2.3 | 58 | Citations (PDF) |
| 214 | Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition | 1.4 | 7 | Citations (PDF) |
| 215 | Flip-chip blue LEDs grown on
bulk GaN substrates utilizing photoelectrochemical etching for substrate removal | 1.6 | 12 | Citations (PDF) |
| 216 | Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W | 1.6 | 28 | Citations (PDF) |
| 217 | Estimation of roughness-induced scattering losses in III-nitride laser diodes with a photoelectrochemically etched current aperture | 1.2 | 3 | Citations (PDF) |
| 218 | High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces | 1.4 | 16 | Citations (PDF) |
| 219 | Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN | 3.1 | 5 | Citations (PDF) |
| 220 | Study of Low-Efficiency Droop in Semipolar ( <formula formulatype="inline"> <tex Notation="TeX">$20\bar{2}\bar{1}$</tex> </formula>) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence | 0.0 | 37 | Citations (PDF) |
| 221 | Properties of near-field photoluminescence in green emitting single and multiple semipolar (202¯1) plane InGaN/GaN quantum wells | 1.7 | 8 | Citations (PDF) |
| 222 | High luminous flux from single crystal phosphor-converted laser-based white lighting system | 2.3 | 196 | Citations (PDF) |
| 223 | High-Modulation-Efficiency, Integrated Waveguide Modulator–Laser Diode at 448 nm | 4.1 | 89 | Citations (PDF) |
| 224 | Hybrid tunnel junction contacts to III–nitride light-emitting diodes | 1.6 | 116 | Citations (PDF) |
| 225 | Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices | 1.2 | 23 | Citations (PDF) |
| 226 | 2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system | 2.3 | 112 | Citations (PDF) |
| 227 | Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication | 2.7 | 146 | Citations (PDF) |
| 228 | Thermally enhanced blue light-emitting diode | 2.3 | 57 | Citations (PDF) |
| 229 | Electroluminescence characteristics of blue InGaN quantum wells onm-plane GaN “double miscut” substrates | 1.6 | 5 | Citations (PDF) |
| 230 | Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions | 1.6 | 7 | Citations (PDF) |
| 231 | Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture | 1.6 | 13 | Citations (PDF) |
| 232 | Demonstration of low resistance ohmic contacts to p-type (202̄1̄) GaN | 1.4 | 12 | Citations (PDF) |
| 233 | Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures | 1.4 | 18 | Citations (PDF) |
| 234 | Low damage dry etch for III-nitride light emitters | 1.4 | 19 | Citations (PDF) |
| 235 | 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication | 2.3 | 138 | Citations (PDF) |
| 236 | High optical power and low‐efficiency droop blue light‐emitting diodes using compositionally step‐graded InGaN barrier | 0.6 | 21 | Citations (PDF) |
| 237 | InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays | 1.4 | 14 | Citations (PDF) |
| 238 | Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD | 0.2 | 7 | Citations (PDF) |
| 239 | Electron Beam Pumped MQW InGaN/GaN Laser | 0.2 | 8 | Citations (PDF) |
| 240 | Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides | 1.4 | 215 | Citations (PDF) |
| 241 | Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition | 1.6 | 4 | Citations (PDF) |
| 242 | Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission | 2.3 | 14 | Citations (PDF) |
| 243 | Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes | 2.3 | 30 | Citations (PDF) |
| 244 | Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties | 2.3 | 50 | Citations (PDF) |
| 245 | Onset of plastic relaxation in semipolar (112¯2) In Ga1−N/GaN heterostructures | 1.7 | 13 | Citations (PDF) |
| 246 | High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design | 2.3 | 57 | Citations (PDF) |
| 247 | Optical properties and carrier dynamics in m ‐plane InGaN quantum wells | 0.7 | 10 | Citations (PDF) |
| 248 | Improved performance of $(20\bar{2}1)$ long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed In<i><sub>x</sub></i>Ga<sub>1−</sub><i><sub>x</sub></i>N buffer layers | 1.6 | 6 | Citations (PDF) |
| 249 | Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes | 1.3 | 25 | Citations (PDF) |
| 250 | Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers | 1.2 | 15 | Citations (PDF) |
| 251 | Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors | 2.3 | 35 | Citations (PDF) |
| 252 | Surface Structured Optical Coatings with Near-Perfect Broadband and Wide-Angle Antireflective Properties | 6.2 | 48 | Citations (PDF) |
| 253 | Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy | 2.4 | 48 | Citations (PDF) |
| 254 | Consequences of Optimal Bond Valence on Structural Rigidity and Improved Luminescence Properties in SrxBa2–xSiO4:Eu2+ Orthosilicate Phosphors | 4.6 | 382 | Citations (PDF) |
| 255 | Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN | 3.5 | 17 | Citations (PDF) |
| 256 | Proxies from Ab Initio Calculations for Screening Efficient Ce3+ Phosphor Hosts | 2.3 | 210 | Citations (PDF) |
| 257 | Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes | 2.3 | 11 | Citations (PDF) |
| 258 | Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells | 1.2 | 7 | Citations (PDF) |
| 259 | An Efficient, Thermally Stable Cerium-Based Silicate Phosphor for Solid State White Lighting | 3.4 | 96 | Citations (PDF) |
| 260 | Tuning luminescent properties through solid-solution in (Ba1−xSrx)9Sc2Si6O24:Ce3+,Li+ | 2.5 | 33 | Citations (PDF) |
| 261 | Rapid microwave preparation of cerium-substituted sodium yttrium silicate phosphors for solid state white lighting | 2.5 | 15 | Citations (PDF) |
| 262 | Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN | 1.6 | 80 | Citations (PDF) |
| 263 | Comparison of Polished and Dry Etched Semipolar $(11\bar{2}2)$ III-Nitride Laser Facets | 1.3 | 6 | Citations (PDF) |
| 264 | Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting | 0.0 | 323 | Citations (PDF) |
| 265 | Structure–composition relationships and optical properties in cerium-substituted (Sr,Ba)3(Y,La)(BO3)3 borate phosphors | 3.6 | 52 | Citations (PDF) |
| 266 | Improving color rendition in solid state white lighting through the use of quantum dots | 3.6 | 45 | Citations (PDF) |
| 267 | N-polar GaN epitaxy and high electron mobility transistors | 1.4 | 218 | Citations (PDF) |
| 268 | Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays | 7.6 | 436 | Citations (PDF) |
| 269 | Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization | 2.3 | 27 | Citations (PDF) |
| 270 | Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates | 1.7 | 21 | Citations (PDF) |
| 271 | Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes | 2.3 | 39 | Citations (PDF) |
| 272 | Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition | 2.3 | 23 | Citations (PDF) |
| 273 | Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth | 1.6 | 84 | Citations (PDF) |
| 274 | Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III–Nitride Light-Emitting Diodes | 1.6 | 3 | Citations (PDF) |
| 275 | Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor | 2.6 | 5 | Citations (PDF) |
| 276 | Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes | 2.3 | 51 | Citations (PDF) |
| 277 | True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy | 1.6 | 23 | Citations (PDF) |
| 278 | Efficient and stable laser-driven white lighting | 1.0 | 171 | Citations (PDF) |
| 279 | Semipolar (202̄1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage | 1.2 | 28 | Citations (PDF) |
| 280 | Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolarm-Plane InGaN Light-Emitting Diodes | 1.6 | 3 | Citations (PDF) |
| 281 | Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes | 0.1 | 1 | Citations (PDF) |
| 282 | Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire | 0.1 | 0 | Citations (PDF) |
| 283 | Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers | 1.6 | 114 | Citations (PDF) |
| 284 | High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes | 1.6 | 104 | Citations (PDF) |
| 285 | Chip Shaping for Light Extraction Enhancement of Bulk $c$-Plane Light-Emitting Diodes | 1.6 | 23 | Citations (PDF) |
| 286 | High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy | 2.3 | 33 | Citations (PDF) |
| 287 | Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells | 2.3 | 55 | Citations (PDF) |
| 288 | 384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer | 2.3 | 27 | Citations (PDF) |
| 289 | Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures | 2.3 | 11 | Citations (PDF) |
| 290 | Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells | 2.3 | 179 | Citations (PDF) |
| 291 | Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures | 2.3 | 43 | Citations (PDF) |
| 292 | Optical Characterization of Double Peak Behavior in 101̄1 Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates | 1.2 | 3 | Citations (PDF) |
| 293 | Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy | 1.2 | 8 | Citations (PDF) |
| 294 | Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar ($20\bar{2}\bar{1}$) Blue Light-Emitting Diodes | 1.6 | 42 | Citations (PDF) |
| 295 | Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology | 2.6 | 45 | Citations (PDF) |
| 296 | The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN | 2.3 | 6 | Citations (PDF) |
| 297 | The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes | 2.3 | 40 | Citations (PDF) |
| 298 | A green-yellow emitting oxyfluoride solid solution phosphor Sr2Ba(AlO4F)1−x(SiO5)x:Ce3+ for thermally stable, high color rendition solid state white lighting | 7.3 | 111 | Citations (PDF) |
| 299 | Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission | 2.3 | 23 | Citations (PDF) |
| 300 | Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy | 2.3 | 8 | Citations (PDF) |
| 301 | 444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer | 2.3 | 59 | Citations (PDF) |
| 302 | Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers | 2.3 | 55 | Citations (PDF) |
| 303 | Stress relaxation and critical thickness for misfit dislocation formation in (101¯) and (3031¯) InGaN/GaN heteroepitaxy | 2.3 | 32 | Citations (PDF) |
| 304 | Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates | 1.6 | 16 | Citations (PDF) |
| 305 | Effect of indium on the conductivity of poly‐crystalline GaN grown on high purity fused silica | 1.2 | 3 | Citations (PDF) |
| 306 | Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN | 1.0 | 1 | Citations (PDF) |
| 307 | Enhancement‐mode m ‐plane AlGaN/GaN HFETs with regrown n +‐GaN contact layer | 0.7 | 4 | Citations (PDF) |
| 308 | Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes | 2.3 | 57 | Citations (PDF) |
| 309 | High-brightness polarized light-emitting diodes | 14.5 | 237 | Citations (PDF) |
| 310 | InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs) | 1.9 | 11 | Citations (PDF) |
| 311 | Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation | 1.9 | 12 | Citations (PDF) |
| 312 | Microstructure of ZnO films synthesized on MgAl2O4 from low-temperature aqueous solution: growth and post-annealing | 2.8 | 10 | Citations (PDF) |
| 313 | Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy | 1.2 | 5 | Citations (PDF) |
| 314 | Optical Characterization of Double Peak Behavior in 101̄1 Semipolar Light-Emitting Diodes on Miscut<i>m</i>-Plane Sapphire Substrates | 1.2 | 0 | Citations (PDF) |
| 315 | Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well | 0.1 | 0 | Citations (PDF) |
| 316 | Cerium Doped Garnet Phosphors for Application in White GaN-based LEDs | 0.1 | 2 | Citations (PDF) |
| 317 | Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGaN Films Using Prism-Coupling Techniques Correlated with Spectroscopic Reflection/Transmission Analysisa | 0.1 | 0 | Citations (PDF) |
| 318 | The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor | 0.1 | 1 | Citations (PDF) |
| 319 | Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) | 0.1 | 4 | Citations (PDF) |
| 320 | Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes | 3.5 | 108 | Citations (PDF) |
| 321 | A facile route to patterned epitaxial ZnO nanostructures by soft lithography | 7.3 | 20 | Citations (PDF) |
| 322 | Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al$_{2}$O$_{3}$ Deposited by Atomic Layer Deposition | 1.6 | 18 | Citations (PDF) |
| 323 | Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting | 2.3 | 215 | Citations (PDF) |
| 324 | Effect of doping and polarization on carrier collection in InGaN quantum well solar cells | 2.3 | 80 | Citations (PDF) |
| 325 | N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate | 2.6 | 37 | Citations (PDF) |
| 326 | Thermally Induced Pore Formation in Epitaxial ZnO Films Grown from Low Temperature Aqueous Solution | 2.4 | 35 | Citations (PDF) |
| 327 | RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation | 2.6 | 21 | Citations (PDF) |
| 328 | High internal and external quantum efficiency InGaN/GaN solar cells | 2.3 | 207 | Citations (PDF) |
| 329 | Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy | 2.3 | 51 | Citations (PDF) |
| 330 | High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$ | 1.6 | 181 | Citations (PDF) |
| 331 | Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes | 2.3 | 22 | Citations (PDF) |
| 332 | High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes | 2.3 | 78 | Citations (PDF) |
| 333 | Semipolar Single-Crystal ZnO Films Deposited by Low-Temperature Aqueous Solution Phase Epitaxy on GaN Light-Emitting Diodes | 1.6 | 11 | Citations (PDF) |
| 334 | 47.1:
Invited Paper
: Progress in Green and Blue Laser Diodes and Their Application in Pico Projection Systems | 0.4 | 5 | Citations (PDF) |
| 335 | High temperature thermoelectric properties of optimized InGaN | 1.6 | 60 | Citations (PDF) |
| 336 | Group III-nitride lasers: a materials perspective | 12.6 | 150 | Citations (PDF) |
| 337 | Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition | 1.7 | 60 | Citations (PDF) |
| 338 | Growth and characterization of N‐polar GaN and AlGaN/GaN HEMTs on (111) silicon | 0.7 | 9 | Citations (PDF) |
| 339 | Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates | 0.7 | 7 | Citations (PDF) |
| 340 | Efficient and Color‐Tunable Oxyfluoride Solid Solution Phosphors for Solid‐State White Lighting | 17.5 | 333 | Citations (PDF) |
| 341 | Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells | 2.3 | 37 | Citations (PDF) |
| 342 | Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes | 2.3 | 72 | Citations (PDF) |
| 343 | Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN | 1.2 | 3 | Citations (PDF) |
| 344 | Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals | 2.3 | 37 | Citations (PDF) |
| 345 | AlGaN-Cladding-Free $m$-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers | 1.6 | 4 | Citations (PDF) |
| 346 | Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells | 2.3 | 27 | Citations (PDF) |
| 347 | Ohmic Cathode Electrode on the Backside of m-Plane and (2021) Bulk GaN Substrates for Optical Device Applications | 1.2 | 4 | Citations (PDF) |
| 348 | Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN | 1.2 | 1 | Citations (PDF) |
| 349 | Ohmic Cathode Electrode on the Backside ofm-Plane and (2021) Bulk GaN Substrates for Optical Device Applications | 1.2 | 1 | Citations (PDF) |
| 350 | Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure | 2.3 | 17 | Citations (PDF) |
| 351 | Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges | 2.2 | 244 | Citations (PDF) |
| 352 | High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes | 1.6 | 64 | Citations (PDF) |
| 353 | High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates | 1.6 | 171 | Citations (PDF) |
| 354 | 30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique | 1.6 | 79 | Citations (PDF) |
| 355 | Lattice Tilt and Misfit Dislocations in (11\bar22) Semipolar GaN Heteroepitaxy | 1.6 | 72 | Citations (PDF) |
| 356 | AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm | 1.6 | 82 | Citations (PDF) |
| 357 | Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN | 2.3 | 78 | Citations (PDF) |
| 358 | Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells | 1.6 | 28 | Citations (PDF) |
| 359 | Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition | 1.6 | 32 | Citations (PDF) |
| 360 | Technique to evaluate the diode ideality factor of light-emitting diodes | 2.3 | 32 | Citations (PDF) |
| 361 | High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates | 1.6 | 79 | Citations (PDF) |
| 362 | Optimization of Device Structures for Bright Blue Semipolar (1011) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition | 1.2 | 19 | Citations (PDF) |
| 363 | Electroluminescence Characterization of (2021) InGaN/GaN Light Emitting Diodes with Various Wavelengths | 1.2 | 24 | Citations (PDF) |
| 364 | High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar (3031) Bulk GaN Substrate | 1.2 | 12 | Citations (PDF) |
| 365 | Propagation of Spontaneous Emission in Birefringentm-Axis Oriented Semipolar (11\bar22) (Al,In,Ga)N Waveguide Structures | 1.2 | 7 | Citations (PDF) |
| 366 | Spontaneous formation of \lbrace 1\,\bar{1}\,0\,1\rbrace InGaN quantum wells on a (1\,1\,\bar{2} \,2) GaN template and their electroluminescence characteristics | 1.4 | 3 | Citations (PDF) |
| 367 | Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes | 1.2 | 20 | Citations (PDF) |
| 368 | Low Ohmic Contact Resistancem-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations | 1.6 | 13 | Citations (PDF) |
| 369 | Optical waveguide simulations for the optimization of InGaN-based green laser diodes | 1.6 | 77 | Citations (PDF) |
| 370 | Sr2.975−xBaxCe0.025AlO4F: a Highly Efficient Green-Emitting Oxyfluoride Phosphor for Solid State White Lighting | 4.6 | 235 | Citations (PDF) |
| 371 | Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates | 1.6 | 24 | Citations (PDF) |
| 372 | InGaN/GaN Blue Laser Diode Grown on Semipolar (30\bar31) Free-Standing GaN Substrates | 1.6 | 28 | Citations (PDF) |
| 373 | Future of group-III nitride semiconductor green laser diodes [Invited] | 1.3 | 68 | Citations (PDF) |
| 374 | N-Polar InAlN/AlN/GaN MIS-HEMTs | 2.6 | 35 | Citations (PDF) |
| 375 | Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes | 1.6 | 28 | Citations (PDF) |
| 376 | Measurement of electron overflow in 450 nm InGaN light-emitting diode structures | 2.3 | 192 | Citations (PDF) |
| 377 | m
-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers | 2.3 | 20 | Citations (PDF) |
| 378 | Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition | 2.3 | 34 | Citations (PDF) |
| 379 | Observation of whispering gallery modes in nonpolar m-plane GaN microdisks | 2.3 | 17 | Citations (PDF) |
| 380 | Photoelectrochemical etching of p-type GaN heterostructures | 2.3 | 27 | Citations (PDF) |
| 381 | Evaluation of GaN substrates grown in supercritical basic ammonia | 2.3 | 5 | Citations (PDF) |
| 382 | Customized Filter Cube in Fluorescence Microscope Measurements of InGaN/GaN Quantum-Well Characterization | 1.2 | 1 | Citations (PDF) |
| 383 | Enhancing the Light Extraction Efficiency of Blue Semipolar (1011) Nitride-Based Light Emitting Diodes through Surface Patterning | 1.2 | 15 | Citations (PDF) |
| 384 | Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition | 1.2 | 37 | Citations (PDF) |
| 385 | Photoelectrochemical Undercut Etching of m-Plane GaN for Microdisk Applications | 2.2 | 14 | Citations (PDF) |
| 386 | Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 \bar1 0) and semipolar (1 1 \bar{2} 2) orientations | 2.2 | 43 | Citations (PDF) |
| 387 | GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation | 1.6 | 64 | Citations (PDF) |
| 388 | m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching | 1.6 | 43 | Citations (PDF) |
| 389 | Enhancement-Modem-plane AlGaN/GaN Heterojunction Field-Effect Transistors | 1.6 | 32 | Citations (PDF) |
| 390 | Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN | 2.2 | 32 | Citations (PDF) |
| 391 | Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures | 1.9 | 24 | Citations (PDF) |
| 392 | Recent progress in nonpolar LEDs as polarized light emitters | 1.2 | 10 | Citations (PDF) |
| 393 | Highly efficient broad‐area blue and white light‐emitting diodes on bulk GaN substrates | 1.2 | 29 | Citations (PDF) |
| 394 | Electron transport in nitrogen‐polar high electron mobility transistors | 0.7 | 2 | Citations (PDF) |
| 395 | Comparison of time‐resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates | 0.7 | 36 | Citations (PDF) |
| 396 | Growth of In-doped ZnO films by metalorganic chemical vapor deposition on GaN(0001) templates | 0.7 | 3 | Citations (PDF) |
| 397 | Homoepitaxial growth and characterization of ZnO(0001) thin films grown by metalorganic chemical vapor epitaxy | 0.7 | 4 | Citations (PDF) |
| 398 | Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition | 1.7 | 221 | Citations (PDF) |
| 399 | Characterization of blue-green m-plane InGaN light emitting diodes | 2.3 | 84 | Citations (PDF) |
| 400 | RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate | 2.6 | 27 | Citations (PDF) |
| 401 | Substitution of oxygen by fluorine in the GdSr_2AlO_5:Ce^3+ phosphors: Gd_1−xSr_2+xAlO_5−xF_x solid solutions for solid state white lighting | 2.3 | 43 | Citations (PDF) |
| 402 | Probing local structure in the yellow phosphor LaSr2AlO5 : Ce3+, by the maximum entropy method and pair distribution function analysis | 7.3 | 43 | Citations (PDF) |
| 403 | Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy | 2.3 | 16 | Citations (PDF) |
| 404 | LaSr2AlO5, a Versatile Host Compound for Ce3+-Based Yellow Phosphors: Structural Tuning of Optical Properties and Use in Solid-State White Lighting | 4.6 | 193 | Citations (PDF) |
| 405 | AlGaN/GaN HEMT With a Transparent Gate Electrode | 2.6 | 22 | Citations (PDF) |
| 406 | Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs | 2.6 | 31 | Citations (PDF) |
| 407 | La1−x−0.025Ce0.025Sr2+xAl1−xSixO5 solid solutions as tunable yellow phosphors for solid state white lighting | 7.3 | 80 | Citations (PDF) |
| 408 | MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications | 2.6 | 25 | Citations (PDF) |
| 409 | Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates | 2.3 | 99 | Citations (PDF) |
| 410 | Light Emitting Diodes with ZnO Current Spreading Layers Deposited from a Low Temperature Aqueous Solution | 1.6 | 25 | Citations (PDF) |
| 411 | Effects of Growth Temperature and Postgrowth Annealing on Inhomogeneous Luminescence Characteristics of Green-Emitting InGaN Films | 1.9 | 3 | Citations (PDF) |
| 412 | Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates | 1.9 | 21 | Citations (PDF) |
| 413 | InGaN/GaN laser diodes on semipolar (10) bulk GaN substrates | 0.7 | 3 | Citations (PDF) |
| 414 | Enhancement of external quantum efficiency in GaN‐based light emitting diodes using a suspended geometry | 0.7 | 8 | Citations (PDF) |
| 415 | M-plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth onc-plane patterned templates | 0.7 | 1 | Citations (PDF) |
| 416 | Improved quality nonpolar a ‐plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) | 1.2 | 7 | Citations (PDF) |
| 417 | Optical polarization of m ‐plane In‐GaN/GaN light‐emitting diodes characterized via confocal microscope | 1.2 | 25 | Citations (PDF) |
| 418 | Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes | 1.7 | 25 | Citations (PDF) |
| 419 | Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates | 1.3 | 47 | Citations (PDF) |
| 420 | Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates | 2.3 | 172 | Citations (PDF) |
| 421 | High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap | 2.3 | 416 | Citations (PDF) |
| 422 | Highly Polarized Single-Chip ELED Sources Using Oppositely Strained MQW Emitters and Absorbers | 1.3 | 0 | Citations (PDF) |
| 423 | Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure | 2.2 | 58 | Citations (PDF) |
| 424 | N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier | 2.6 | 47 | Citations (PDF) |
| 425 | Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes | 1.8 | 11 | Citations (PDF) |
| 426 | Output Saturation and Linearity of Waveguide Unitraveling-Carrier Photodiodes | 0.9 | 19 | Citations (PDF) |
| 427 | Correlation Between DC–RF Dispersion and Gate Leakage in Deeply Recessed GaN/AlGaN/GaN HEMTs | 2.6 | 18 | Citations (PDF) |
| 428 | V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation | 2.6 | 45 | Citations (PDF) |
| 429 | Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors | 1.6 | 21 | Citations (PDF) |
| 430 | V-Gate GaN HEMTs for X-Band Power Applications | 2.6 | 65 | Citations (PDF) |
| 431 | Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition | 1.2 | 29 | Citations (PDF) |
| 432 | Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes | 1.2 | 12 | Citations (PDF) |
| 433 | Hexagonal Truncated Pyramidal Light Emitting Diodes through Wafer Bonding of ZnO to GaN, Laser Lift-off, and Photo Chemical Etching | 1.2 | 6 | Citations (PDF) |
| 434 | Pointed Cone Shaped Light-Emitting Diodes Based on ZnO/GaN Wafer Bonding | 1.2 | 1 | Citations (PDF) |
| 435 | Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition | 1.6 | 58 | Citations (PDF) |
| 436 | Plane Dependent Growth of GaN in Supercritical Basic Ammonia | 1.6 | 20 | Citations (PDF) |
| 437 | Electrical characterization of low defect density nonpolar (11¯20) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) | 1.9 | 1 | Citations (PDF) |
| 438 | Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes | 2.2 | 59 | Citations (PDF) |
| 439 | Ga
N
∕
In
Ga
N
light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth | 2.3 | 46 | Citations (PDF) |
| 440 | Experimental technique to correlate optical excitation intensities with electrical excitation intensities for semiconductor optoelectronic device characterization | 1.4 | 12 | Citations (PDF) |
| 441 | A yellow-emitting Ce3+ phosphor, La1−xCexSr2AlO5, for white light-emitting diodes | 2.3 | 163 | Citations (PDF) |
| 442 | Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress | 2.3 | 22 | Citations (PDF) |
| 443 | Optical polarization characteristics of InGaN∕GaN light-emitting diodes fabricated on GaN substrates oriented between (101¯) and (101¯1¯) planes | 2.3 | 36 | Citations (PDF) |
| 444 | Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth | 2.3 | 20 | Citations (PDF) |
| 445 | Dichromatic color tuning with InGaN-based light-emitting diodes | 2.3 | 8 | Citations (PDF) |
| 446 | Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes | 1.4 | 15 | Citations (PDF) |
| 447 | Electroluminescence efficiency of (1\,0\,\bar{1}\,0) -oriented InGaN-based light-emitting diodes at low temperature | 2.2 | 18 | Citations (PDF) |
| 448 | High Power and High Efficiency Semipolar InGaN Light Emitting Diodes | 0.0 | 36 | Citations (PDF) |
| 449 | Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix | 0.0 | 2 | Citations (PDF) |
| 450 | Photoelectrochemical Properties of Nonpolar and Semipolar GaN | 1.2 | 28 | Citations (PDF) |
| 451 | Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes | 1.2 | 54 | Citations (PDF) |
| 452 | Direct water photoelectrolysis with patterned n-GaN | 2.3 | 79 | Citations (PDF) |
| 453 | Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate | 1.6 | 20 | Citations (PDF) |
| 454 | High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate | 2.3 | 82 | Citations (PDF) |
| 455 | Impact of strain on free-exciton resonance energies in wurtzite AlN | 1.6 | 50 | Citations (PDF) |
| 456 | Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness | 2.3 | 21 | Citations (PDF) |
| 457 | Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy | 2.3 | 8 | Citations (PDF) |
| 458 | Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrownm-Plane GaN Films | 1.2 | 2 | Citations (PDF) |
| 459 | Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures | 1.2 | 18 | Citations (PDF) |
| 460 | Demonstration of Nonpolarm-Plane InGaN/GaN Laser Diodes | 1.2 | 209 | Citations (PDF) |
| 461 | Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz | 1.2 | 51 | Citations (PDF) |
| 462 | High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate | 1.2 | 92 | Citations (PDF) |
| 463 | Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature | 1.2 | 4 | Citations (PDF) |
| 464 | Semipolar $(10\bar{1}\bar{1})$ InGaN/GaN Laser Diodes on Bulk GaN Substrates | 1.2 | 45 | Citations (PDF) |
| 465 | Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents | 1.2 | 10 | Citations (PDF) |
| 466 | Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes | 1.2 | 87 | Citations (PDF) |
| 467 | Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes | 1.8 | 16 | Citations (PDF) |
| 468 | 40-Gb/s Widely Tunable Low-Drive-Voltage Electroabsorption-Modulated Transmitters | 3.0 | 35 | Citations (PDF) |
| 469 | Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition | 2.3 | 68 | Citations (PDF) |
| 470 | Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth | 2.3 | 74 | Citations (PDF) |
| 471 | High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar $(10\bar{1}\bar{1})$ Bulk GaN Substrates | 1.2 | 94 | Citations (PDF) |
| 472 | High Power and High External Efficiencym-Plane InGaN Light Emitting Diodes | 1.2 | 248 | Citations (PDF) |
| 473 | Study of the n + GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance | 1.2 | 12 | Citations (PDF) |
| 474 | High Output Saturation and High-Linearity Uni-Traveling-Carrier Waveguide Photodiodes | 1.3 | 42 | Citations (PDF) |
| 475 | Triangular pattern formation on silicon through self-organization of GaN nanoparticles | 5.1 | 1 | Citations (PDF) |
| 476 | Growth evolution in sidewall lateral epitaxial overgrowth (SLEO) | 1.7 | 34 | Citations (PDF) |
| 477 | Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy | 1.2 | 7 | Citations (PDF) |
| 478 | Improved electroluminescence on nonpolarm -plane InGaN/GaN quantum wells LEDs | 1.3 | 151 | Citations (PDF) |
| 479 | High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate | 1.3 | 109 | Citations (PDF) |
| 480 | AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes | 1.2 | 75 | Citations (PDF) |
| 481 | Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding | 2.3 | 33 | Citations (PDF) |
| 482 | GaN light-emitting diodes with Archimedean lattice photonic crystals | 2.3 | 44 | Citations (PDF) |
| 483 | Photonic crystal laser lift-off GaN light-emitting diodes | 2.3 | 124 | Citations (PDF) |
| 484 | Electron mobility in graded AlGaN alloys | 2.3 | 50 | Citations (PDF) |
| 485 | X-ray microdiffraction imaging investigations of wing tilt in epitaxially overgrown GaN | 1.2 | 3 | Citations (PDF) |
| 486 | Crystal quality and growth evolution of aluminum nitride on silicon carbide | 1.2 | 12 | Citations (PDF) |
| 487 | AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths | 1.2 | 19 | Citations (PDF) |
| 488 | Optical polarization anisotropy in strainedA-plane GaN films onR-plane sapphire | 1.0 | 4 | Citations (PDF) |
| 489 | Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors | 23.7 | 669 | Citations (PDF) |
| 490 | Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy | 1.7 | 30 | Citations (PDF) |
| 491 | Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs | 1.9 | 8 | Citations (PDF) |
| 492 | First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes | 1.2 | 28 | Citations (PDF) |
| 493 | Effects of Phosphor Application Geometry on White Light-Emitting Diodes | 1.2 | 23 | Citations (PDF) |
| 494 | Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding | 1.2 | 11 | Citations (PDF) |
| 495 | Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature | 1.2 | 11 | Citations (PDF) |
| 496 | Effect of Substrate Miscut on the Direct Growth of Semipolar (10-1-1) GaN on (100) MgAl2O4by Metalorganic Chemical Vapor Deposition | 1.2 | 17 | Citations (PDF) |
| 497 | Etching of Ga-face and N-face GaN by Inductively Coupled Plasma | 1.2 | 27 | Citations (PDF) |
| 498 | Nonpolarm-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation | 1.2 | 68 | Citations (PDF) |
| 499 | Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC | 1.2 | 64 | Citations (PDF) |
| 500 | Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrowna-Plane GaN | 1.2 | 5 | Citations (PDF) |
| 501 | Stability of (1\bar100)m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition | 1.2 | 50 | Citations (PDF) |
| 502 | Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution | 2.3 | 191 | Citations (PDF) |
| 503 | Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (1122)-plane GaN | 1.6 | 46 | Citations (PDF) |
| 504 | Characterizing the nanoacoustic superlattice in a phonon cavity using a piezoelectric single quantum well | 2.3 | 18 | Citations (PDF) |
| 505 | Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy | 2.3 | 51 | Citations (PDF) |
| 506 | Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth | 2.3 | 126 | Citations (PDF) |
| 507 | Visible resonant modes in GaN-based photonic crystal membrane cavities | 2.3 | 50 | Citations (PDF) |
| 508 | Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy | 1.9 | 96 | Citations (PDF) |
| 509 | Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulkm-Plane GaN Substrate | 1.2 | 69 | Citations (PDF) |
| 510 | Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding | 1.2 | 3 | Citations (PDF) |
| 511 | Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates | 1.2 | 40 | Citations (PDF) |
| 512 | Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide | 1.2 | 24 | Citations (PDF) |
| 513 | A semipolar (10-1-3) InGaN/GaN green light emitting diode | 0.1 | 1 | Citations (PDF) |
| 514 | Local wing tilt analysis of laterally overgrown GaN by x-ray rocking curve imaging | 2.2 | 19 | Citations (PDF) |
| 515 | Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films | 1.2 | 26 | Citations (PDF) |
| 516 | Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN | 2.3 | 77 | Citations (PDF) |
| 517 | Multiple-band-edge quantum-well intermixing in the InGaAs∕InGaAsP∕InGaP material system | 2.3 | 17 | Citations (PDF) |
| 518 | Demonstration of Nonpolarm-Plane InGaN/GaN Light-Emitting Diodes on Free-Standingm-Plane GaN Substrates | 1.2 | 201 | Citations (PDF) |
| 519 | Synthesis of luminescing (In,Ga)N nanoparticles from an inorganic ammonium fluoride precursor | 7.3 | 21 | Citations (PDF) |
| 520 | Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts | 2.6 | 99 | Citations (PDF) |
| 521 | Simultaneous four-photon luminescence, third-harmonic generation, and second-harmonic generation microscopy of GaN | 2.2 | 14 | Citations (PDF) |
| 522 | Dipole Engineering in Nitride-based HEMTs | 0.0 | 0 | Citations (PDF) |
| 523 | Wafer-fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor with uid-GaAs Base-Collector Setback | 0.1 | 4 | Citations (PDF) |
| 524 | Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications | 1.2 | 5 | Citations (PDF) |
| 525 | High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication | 2.3 | 2 | Citations (PDF) |
| 526 | Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques | 1.6 | 91 | Citations (PDF) |
| 527 | Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes | 2.3 | 22 | Citations (PDF) |
| 528 | AlGaN/GaN current aperture vertical electron transistors with regrown channels | 1.6 | 214 | Citations (PDF) |
| 529 | Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique | 1.2 | 28 | Citations (PDF) |
| 530 | Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching | 1.2 | 95 | Citations (PDF) |
| 531 | A study of regrowth interface and material quality for a novel InP-based architecture | 1.7 | 6 | Citations (PDF) |
| 532 | Generation of coherent acoustic phonons in GaN-based p-n junction | 0.7 | 0 | Citations (PDF) |
| 533 | High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP | 1.7 | 1 | Citations (PDF) |
| 534 | Preparation of indium nitride micro- and nanostructures by ammonolysis of indium oxide | 7.3 | 66 | Citations (PDF) |
| 535 | Gallium Nitride Powders from Ammonolysis: Influence of Reaction Parameters on Structure and Properties | 4.6 | 40 | Citations (PDF) |
| 536 | Metalorganic chemical vapor deposition of group III nitrides—a discussion of critical issues | 1.7 | 83 | Citations (PDF) |
| 537 | Blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy | 0.7 | 3 | Citations (PDF) |
| 538 | Oxygen doping of c-plane GaN by metalorganic chemical vapor deposition | 0.7 | 5 | Citations (PDF) |
| 539 | Observation of huge nonlinear absorption enhancement near exciton resonance in GaN | 2.3 | 17 | Citations (PDF) |
| 540 | n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550–750 °C | 2.3 | 6 | Citations (PDF) |
| 541 | Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells | 2.3 | 17 | Citations (PDF) |
| 542 | High conductivity modulation doped AlGaN/GaN multiple channel heterostructures | 1.6 | 89 | Citations (PDF) |
| 543 | Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor | 2.3 | 12 | Citations (PDF) |
| 544 | 1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control | 2.3 | 19 | Citations (PDF) |
| 545 | Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures | 1.6 | 239 | Citations (PDF) |
| 546 | Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition | 1.2 | 68 | Citations (PDF) |
| 547 | Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition | 1.2 | 174 | Citations (PDF) |
| 548 | Non-planar Selective Area Growth and Characterization of GaN and AlGaN | 1.2 | 27 | Citations (PDF) |
| 549 | Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys | 2.3 | 198 | Citations (PDF) |
| 550 | Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition | 2.3 | 352 | Citations (PDF) |
| 551 | Femtosecond dynamics of exciton bleaching in bulk GaN at room temperature | 2.3 | 15 | Citations (PDF) |
| 552 | Ultrashort hole capture time in Mg-doped GaN thin films | 2.3 | 13 | Citations (PDF) |
| 553 | Spectral Properties of Various Cerium Doped Garnet Phosphors for Application in White GaN-based LEDs | 0.1 | 1 | Citations (PDF) |
| 554 | Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells | 2.3 | 43 | Citations (PDF) |
| 555 | Generation of coherent acoustic phonons in strained GaN thin films | 2.3 | 39 | Citations (PDF) |
| 556 | Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN | 2.3 | 51 | Citations (PDF) |
| 557 | Infrared and Raman-scattering studies in single-crystalline GaN nanowires | 2.0 | 160 | Citations (PDF) |
| 558 | Selective Area Mass Transport Regrowth of Gallium Nitride | 1.2 | 12 | Citations (PDF) |
| 559 | Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy | 1.2 | 10 | Citations (PDF) |
| 560 | Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells | 2.3 | 11 | Citations (PDF) |
| 561 | Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states | 2.3 | 17 | Citations (PDF) |
| 562 | Mapping piezoelectric‐field distribution in gallium nitride with scanning second‐harmonic generation microscopy | 2.2 | 22 | Citations (PDF) |
| 563 | Blue Diode Lasers | 0.2 | 76 | Citations (PDF) |
| 564 | Title is missing! | 2.6 | 16 | Citations (PDF) |
| 565 | Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells | 1.2 | 21 | Citations (PDF) |
| 566 | Polarization effects and transport in AlGaN/GaN system | 1.5 | 12 | Citations (PDF) |
| 567 | Heavy doping effects in Mg-doped GaN | 1.6 | 407 | Citations (PDF) |
| 568 | Two-photon absorption study of GaN | 2.3 | 106 | Citations (PDF) |
| 569 | Depletion region effects in Mg-doped GaN | 1.6 | 83 | Citations (PDF) |
| 570 | Scanning second-harmonic/third-harmonic generation microscopy of gallium nitride | 2.3 | 65 | Citations (PDF) |
| 571 | Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies | 1.6 | 101 | Citations (PDF) |
| 572 | Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer | 0.2 | 110 | Citations (PDF) |
| 573 | Cl[sub 2] reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors | 1.5 | 41 | Citations (PDF) |
| 574 | Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells | 2.3 | 45 | Citations (PDF) |
| 575 | Polarization-enhanced Mg doping of AlGaN/GaN superlattices | 2.3 | 163 | Citations (PDF) |
| 576 | Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices | 2.3 | 269 | Citations (PDF) |
| 577 | Growth and properties of InGaN nanoscale islands on GaN | 1.7 | 34 | Citations (PDF) |
| 578 | Spiral Growth of InGaN Nanoscale Islands on GaN | 1.2 | 54 | Citations (PDF) |
| 579 | Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD | 0.2 | 80 | Citations (PDF) |
| 580 | High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts | 2.3 | 68 | Citations (PDF) |
| 581 | Substrate Reactivity and “Controlled Contamination” in Metalorganic Chemical Vapor Deposition of GaN on Sapphire | 1.2 | 16 | Citations (PDF) |
| 582 | Substrate Surface Treatments and “Controlled Contamination” in GaN / Sapphire MOCVD | 0.1 | 3 | Citations (PDF) |
| 583 | White light from InGaN/conjugated polymer hybrid light-emitting diodes | 2.3 | 196 | Citations (PDF) |
| 584 | Modeling and Control of a Metalorganic Chemical Vapor Deposition Process for III-V Compound Semiconductor Epitaxy | 0.3 | 1 | Citations (PDF) |
| 585 | Control of III–V epitaxy in a metalorganic chemical vapor deposition process: impact of source flow control on composition and thickness | 1.7 | 16 | Citations (PDF) |
| 586 | Low interface trap density for remote plasma deposited SiO2 on n‐type GaN | 2.3 | 180 | Citations (PDF) |
| 587 | 45 nm wavelength tuning range of an InP/InGaAsP photonic integrated tunable receiver | 2.3 | 3 | Citations (PDF) |
| 588 | On the interface resistance of regrown GaInAs on InP | 0.8 | 1 | Citations (PDF) |
| 589 | From research to manufacture—The evolution of MOCVD | 1.4 | 5 | Citations (PDF) |
| 590 | Lasing Characteristics of InGaP/InGaAlP Visible Lasers Grown by Metalorganic Chemical Vapor Deposition with Tertiarybutylphosphine (TBP) | 1.2 | 4 | Citations (PDF) |
| 591 | Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (11\bar22) Gallium Nitride Substrates | 1.6 | 45 | Citations (PDF) |
| 592 | Compositional Dependence of Nonpolarm-Plane InxGa1-xN/GaN Light Emitting Diodes | 1.6 | 56 | Citations (PDF) |
| 593 | Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures | 1.6 | 74 | Citations (PDF) |
| 594 | Correlation between Optical Polarization and Luminescence Morphology of (11\bar22)-Oriented InGaN/GaN Quantum-Well Structures | 1.6 | 29 | Citations (PDF) |
| 595 | Blue-Green InGaN/GaN Laser Diodes on Miscutm-Plane GaN Substrate | 1.6 | 57 | Citations (PDF) |
| 596 | Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding | 1.6 | 37 | Citations (PDF) |
| 597 | Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors | 1.6 | 9 | Citations (PDF) |
| 598 | Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 1\bar2 2) Plane Gallium Nitrides | 1.6 | 25 | Citations (PDF) |
| 599 | III-nitride thin film liftoff using electrochemical etching | 2.3 | 4 | Citations (PDF) |
| 600 | Recent Advancements in N-polar GaN HEMT Technology | 1.8 | 10 | Citations (PDF) |
| 601 | Green (524 nm) InGaN/GaN laser diodes with nano-porous cladding and deep-ridge waveguiding | 2.3 | 1 | Citations (PDF) |
| 602 | Thermally Resilient InGaN/GaN MicroLEDs Maintaining Narrowband Emission to 250 °C | 2.6 | 1 | Citations (PDF) |
| 603 | Monolithic transfer of thin-film micro-LEDs via electrochemical etching | 2.3 | 1 | Citations (PDF) |
| 604 | AlGaN-Based UV LEDs With High Wall-Plug Efficiency | 2.6 | 0 | Citations (PDF) |
| 605 | Low-droop and high-efficiency (&gt;40%) UVA emitters enabled by precursor modulated quantum wells | 2.3 | 0 | Citations (PDF) |
| 606 | Green LEDs with V-defects formed from intentional dislocation half-loops | 2.3 | 0 | Citations (PDF) |
