| 1 | Accurate evaluation method for HRS retention of VCM ReRAM | 3.6 | 5 | Citations (PDF) |
| 2 | Electronic vs phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition | 3.0 | 2 | Citations (PDF) |
| 3 | Roadmap to neuromorphic computing with emerging technologies | 3.6 | 131 | Citations (PDF) |
| 4 | Memristively programmable transistors | 2.6 | 3 | Citations (PDF) |
| 5 | Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance | 1.5 | 6 | Citations (PDF) |
| 6 | Application of the Quantum-Point-Contact Formalism to Model the Filamentary Conduction in
Ta
2
O
5
-Based Resistive Switching Devices | 3.9 | 6 | Citations (PDF) |
| 7 | Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors | 17.0 | 123 | Citations (PDF) |
| 8 | Oxygen Diffusion in Platinum Electrodes: A Molecular Dynamics Study of the Role of Extended Defects | 4.0 | 14 | Citations (PDF) |
| 9 | Reliability aspects of binary vector-matrix-multiplications using ReRAM devices | 4.8 | 32 | Citations (PDF) |
| 10 | Moisture Effect on the Threshold Switching of TOPO-Stabilized Sub-10 nm HfO2 Nanocrystals in Nanoscale Devices | 3.1 | 7 | Citations (PDF) |
| 11 | Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices | 4.9 | 36 | Citations (PDF) |
| 12 | Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)” | 2.7 | 1 | Citations (PDF) |
| 13 | Carbonate formation lowers the electrocatalytic activity of perovskite oxides for water electrolysis | 9.3 | 23 | Citations (PDF) |
| 14 | Tuning electrochemically driven surface transformation in atomically flat LaNiO3 thin films for enhanced water electrolysis | 33.4 | 173 | Citations (PDF) |
| 15 | Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory | 2.7 | 38 | Citations (PDF) |
| 16 | Current-limiting amplifier for high speed measurement of resistive switching data | 1.5 | 20 | Citations (PDF) |
| 17 | Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns | 2.7 | 33 | Citations (PDF) |
| 18 | Determining the Electrical Charging Speed Limit of ReRAM Devices | 1.8 | 15 | Citations (PDF) |
| 19 | Standards for the Characterization of Endurance in Resistive Switching Devices | 15.3 | 247 | Citations (PDF) |
| 20 | Intrinsic RESET Speed Limit of Valence Change Memories | 4.6 | 21 | Citations (PDF) |
| 21 | Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions | 4.9 | 14 | Citations (PDF) |
| 22 | HRS Instability in Oxide-Based Bipolar Resistive Switching Cells | 2.7 | 58 | Citations (PDF) |
| 23 | Comprehensive model for the electronic transport in
Pt/SrTiO3
analog memristive devices | 3.4 | 27 | Citations (PDF) |
| 24 | Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models | 3.8 | 131 | Citations (PDF) |
| 25 | In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches | 5.6 | 12 | Citations (PDF) |
| 26 | Design of defect-chemical properties and device performance in memristive systems | 10.9 | 78 | Citations (PDF) |
| 27 | Study of the SET switching event of VCM-based memories on a picosecond timescale | 2.0 | 30 | Citations (PDF) |
| 28 | Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM) | 2.7 | 90 | Citations (PDF) |
| 29 | Defect chemistry of donor-doped BaTiO3with BaO-excess for reduction resistant PTCR thermistor applications – redox-behaviour | 2.7 | 24 | Citations (PDF) |
| 30 | On the universality of the I–V switching characteristics in non-volatile and volatile resistive switching oxides | 3.0 | 28 | Citations (PDF) |
| 31 | Topotactic Phase Transition Driving Memristive Behavior | 24.5 | 91 | Citations (PDF) |
| 32 | Mott-transition-based RRAM | 14.0 | 87 | Citations (PDF) |
| 33 | Stateful Three-Input Logic with Memristive Switches | 3.4 | 57 | Citations (PDF) |
| 34 | Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x ∼ 1 | 5.0 | 24 | Citations (PDF) |
| 35 | Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior | 3.6 | 147 | Citations (PDF) |
| 36 | Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels | 3.6 | 9 | Citations (PDF) |
| 37 | Spectroscopic elucidation of ionic motion processes in tunnel oxide-based memristive devices | 3.0 | 16 | Citations (PDF) |
| 38 | Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices | 2.7 | 45 | Citations (PDF) |
| 39 | Heavily donor-doped, optically translucent ferroelectric barium titanate ceramics through defect chemical engineering | 2.4 | 5 | Citations (PDF) |
| 40 | Introduction to new memory paradigms: memristive phenomena and neuromorphic applications | 3.0 | 42 | Citations (PDF) |
| 41 | Electric transport properties of rare earth doped YbxCa1-xMnO3 ceramics (part I: Optimization of ceramic processing) | 6.2 | 3 | Citations (PDF) |
| 42 | In-Gap States and Band-Like Transport in Memristive Devices | 8.7 | 27 | Citations (PDF) |
| 43 | Chemical control of the electrical surface properties in donor-doped transition metal oxides | 2.7 | 19 | Citations (PDF) |
| 44 | Electrically controlled transformation of memristive titanates into mesoporous titanium oxides via incongruent sublimation | 3.4 | 12 | Citations (PDF) |
| 45 | Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy | 3.6 | 22 | Citations (PDF) |
| 46 | Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films | 2.0 | 38 | Citations (PDF) |
| 47 | Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices | 4.9 | 30 | Citations (PDF) |
| 48 | Multi-valued and Fuzzy Logic Realization using TaOx Memristive Devices | 3.4 | 157 | Citations (PDF) |
| 49 | Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots | 24.5 | 80 | Citations (PDF) |
| 50 | Degradation Kinetics during Oxygen Electrocatalysis on Perovskite-Based Surfaces in Alkaline Media | 3.6 | 18 | Citations (PDF) |
| 51 | Processes and Effects of Oxygen and Moisture in Resistively Switching TaOx and HfOx | 4.9 | 96 | Citations (PDF) |
| 52 | Field-Driven Hopping Transport of Oxygen Vacancies in Memristive Oxide Switches with Interface-Mediated Resistive Switching | 3.9 | 47 | Citations (PDF) |
| 53 | Addressing Multiple Resistive States of Polyoxovanadates: Conductivity as a Function of Individual Molecular Redox States | 15.0 | 72 | Citations (PDF) |
| 54 | Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities | 13.7 | 156 | Citations (PDF) |
| 55 | Nanospectroscopy of Infrared Phonon Resonance Enables Local Quantification of Electronic Properties in Doped SrTiO3 Ceramics | 17.0 | 39 | Citations (PDF) |
| 56 | Crossover From Deterministic to Stochastic Nature of Resistive-Switching Statistics in a Tantalum Oxide Thin Film | 2.7 | 13 | Citations (PDF) |
| 57 | Correlation between the transport mechanisms in conductive filaments inside Ta2O5-based resistive switching devices and in substoichiometric TaOx thin films | 3.0 | 23 | Citations (PDF) |
| 58 | Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiO<italic>x</italic> Bilayer ReRAM Cells | 2.7 | 123 | Citations (PDF) |
| 59 | Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices | 3.4 | 58 | Citations (PDF) |
| 60 | Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices | 8.0 | 96 | Citations (PDF) |
| 61 | A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO3‐Based Memory Cell | 4.9 | 34 | Citations (PDF) |
| 62 | Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules | 24.5 | 69 | Citations (PDF) |
| 63 | Resistive switching in optoelectronic III-V materials based on deep traps | 3.4 | 3 | Citations (PDF) |
| 64 | A SIMS study of cation and anion diffusion in tantalum oxide | 2.7 | 24 | Citations (PDF) |
| 65 | Field-enhanced route to generating anti-Frenkel pairs in
HfO2 | 2.7 | 40 | Citations (PDF) |
| 66 | Structure and orbital ordering of ultrathin LaVO3probed by atomic resolution electron microscopy and Raman spectroscopy | 2.0 | 4 | Citations (PDF) |
| 67 | Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride | 17.0 | 300 | Citations (PDF) |
| 68 | Energy Level Alignment at the Fullerene/Titanium Oxide Ultrathin Film Interface | 3.1 | 6 | Citations (PDF) |
| 69 | 3-bit Resistive RAM Write-Read Scheme Based on Complementary Switching Mechanism | 3.4 | 21 | Citations (PDF) |
| 70 | Ion migration in crystalline and amorphous HfOX | 2.8 | 56 | Citations (PDF) |
| 71 | SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems | 2.6 | 65 | Citations (PDF) |
| 72 | Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM | 24.5 | 197 | Citations (PDF) |
| 73 | Thin film proton conducting membranes for micro-solid oxide fuel cells by chemical solution deposition | 1.9 | 11 | Citations (PDF) |
| 74 | Interface-driven formation of a two-dimensional dodecagonal fullerene quasicrystal | 13.7 | 21 | Citations (PDF) |
| 75 | Oxygen partial pressure dependence of surface space charge formation in donor-doped SrTiO3 | 3.6 | 25 | Citations (PDF) |
| 76 | Nanosized Conducting Filaments Formed by Atomic-Scale Defects in Redox-Based Resistive Switching Memories | 6.7 | 86 | Citations (PDF) |
| 77 | Thermodynamic Ground States of Complex Oxide Heterointerfaces | 8.0 | 40 | Citations (PDF) |
| 78 | Improvement of SET variability in TaOxbased resistive RAM devices | 2.6 | 9 | Citations (PDF) |
| 79 | Electrochemical Tantalum Oxide for Resistive Switching Memories | 24.5 | 84 | Citations (PDF) |
| 80 | Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices | 17.0 | 32 | Citations (PDF) |
| 81 | Volatile HRS asymmetry and subloops in resistive switching oxides | 5.0 | 15 | Citations (PDF) |
| 82 | Design rules for threshold switches based on a field triggered thermal runaway mechanism | 1.9 | 11 | Citations (PDF) |
| 83 | Ordering and Phase Control in Epitaxial Double-Perovskite Catalysts for the Oxygen Evolution Reaction | 12.4 | 44 | Citations (PDF) |
| 84 | Investigation of the Impact of High Temperatures on the Switching Kinetics of Redox‐Based Resistive Switching Cells using a High‐Speed Nanoheater | 4.9 | 53 | Citations (PDF) |
| 85 | Interaction between depolarization effects, interface layer, and fatigue behavior in PZT thin film capacitors | 2.0 | 15 | Citations (PDF) |
| 86 | Understanding on the selective carbon monoxide sensing characteristics of copper oxide-zinc oxide composite thin films | 7.6 | 37 | Citations (PDF) |
| 87 | Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices | 15.3 | 120 | Citations (PDF) |
| 88 | Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model | 4.9 | 118 | Citations (PDF) |
| 89 | Dependence of the SET switching variability on the initial state in HfOx‐based ReRAM | 1.5 | 23 | Citations (PDF) |
| 90 | Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases | 3.4 | 22 | Citations (PDF) |
| 91 | The influence of non-stoichiometry on the switching kinetics of strontium-titanate ReRAM devices | 2.0 | 11 | Citations (PDF) |
| 92 | Probing orbital ordering in LaVO3 epitaxial films by Raman scattering | 3.6 | 13 | Citations (PDF) |
| 93 | Resistive Switching in Aqueous Nanopores by Shock Electrodeposition | 5.3 | 12 | Citations (PDF) |
| 94 | Homogeneity and variation of donor doping in Verneuil-grown SrTiO3:Nb single crystals | 3.4 | 34 | Citations (PDF) |
| 95 | Hafnium carbide formation in oxygen deficient hafnium oxide thin films | 3.0 | 11 | Citations (PDF) |
| 96 | Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices | 5.0 | 78 | Citations (PDF) |
| 97 | Synthesis of nitrogen and lanthanum codoped barium titanate with a novel thermal ammonolysis reactor | 6.2 | 5 | Citations (PDF) |
| 98 | Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process | 4.9 | 169 | Citations (PDF) |
| 99 | Hydroxyl Defect Effect on Reoxidation of Sc‐Doped (
Ba
,
Ca
)(
Ti
,
Zr
)
O
3
Fired in Reducing Atmospheres | 3.7 | 14 | Citations (PDF) |
| 100 | Hydroxyl defect effect on the resistance degradation behavior in Y-doped (Ba,Ca)(Ti,Zr)O 3 bulk ceramics | 6.2 | 9 | Citations (PDF) |
| 101 | Dynamics of the metal-insulator transition of donor-dopedSrTiO3 | 3.4 | 55 | Citations (PDF) |
| 102 | (Invited) Mobile Ions, Transport and Redox Processes in Memristive Devices | 0.4 | 14 | Citations (PDF) |
| 103 | Stability and Degradation of Perovskite Electrocatalysts for Oxygen Evolution Reaction | 5.3 | 38 | Citations (PDF) |
| 104 | Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices | 5.0 | 129 | Citations (PDF) |
| 105 | Space charges and defect concentration profiles at complex oxide interfaces | 3.4 | 65 | Citations (PDF) |
| 106 | Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic | 3.4 | 62 | Citations (PDF) |
| 107 | Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes | 13.7 | 102 | Citations (PDF) |
| 108 | Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure | 1.9 | 55 | Citations (PDF) |
| 109 | Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices | 3.4 | 36 | Citations (PDF) |
| 110 | Tuning the surface electronic structure of a Pt3Ti(111) electro catalyst | 5.0 | 25 | Citations (PDF) |
| 111 | 3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaOX/Pt-ReRAM Devices | 3.4 | 71 | Citations (PDF) |
| 112 | Nonlinearity analysis of TaOX redox-based RRAM | 2.7 | 16 | Citations (PDF) |
| 113 | PrxBa1-xCoO3Oxide Electrodes for Oxygen Evolution Reaction in Alkaline Solutions by Chemical Solution Deposition | 3.1 | 23 | Citations (PDF) |
| 114 | Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy | 15.3 | 111 | Citations (PDF) |
| 115 | Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO3 Thin Film Devices | 17.0 | 63 | Citations (PDF) |
| 116 | Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures | 17.0 | 169 | Citations (PDF) |
| 117 | Realization of Boolean Logic Functionality Using Redox‐Based Memristive Devices | 17.0 | 142 | Citations (PDF) |
| 118 | A HfO2‐Based Complementary Switching Crossbar Adder | 4.9 | 55 | Citations (PDF) |
| 119 | Resistive Switching of Individual, Chemically Synthesized TiO2NanoparticlesSmall, 2015, 11, 6444-6456 | 11.5 | 26 | Citations (PDF) |
| 120 | Avalanche‐Discharge‐Induced Electrical Forming in Tantalum Oxide‐Based Metal–Insulator–Metal Structures | 17.0 | 32 | Citations (PDF) |
| 121 | Enhanced fullerene–Au(111) coupling in (2√3 × 2√3)R30° superstructures with intermolecular interactions | 2.4 | 18 | Citations (PDF) |
| 122 | Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells | 2.1 | 41 | Citations (PDF) |
| 123 | Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO2thin films | 1.5 | 23 | Citations (PDF) |
| 124 | A Complementary Resistive Switch-Based Crossbar Array Adder | 2.5 | 106 | Citations (PDF) |
| 125 | Understanding the conductive channel evolution in Na:WO3−x-based planar devices | 5.0 | 17 | Citations (PDF) |
| 126 | The influence of the local oxygen vacancy concentration on the piezoresponse of strontium titanate thin films | 5.0 | 32 | Citations (PDF) |
| 127 | Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations | 5.0 | 103 | Citations (PDF) |
| 128 | Atomic structure and chemistry of dislocation cores at low-angle tilt grain boundary in SrTiO3 bicrystals | 8.7 | 64 | Citations (PDF) |
| 129 | Effect of RESET Voltage on Distribution of SET Switching Time of Bipolar Resistive Switching in a Tantalum Oxide Thin Film | 2.7 | 24 | Citations (PDF) |
| 130 | Study of Memristive Associative Capacitive Networks for CAM Applications | 2.5 | 10 | Citations (PDF) |
| 131 | Low-current operations in 4F2-compatible Ta2O5-based complementary resistive switches | 2.6 | 23 | Citations (PDF) |
| 132 | Spectromicroscopic insights for rational design of redox-based memristive devices | 13.7 | 114 | Citations (PDF) |
| 133 | Phase-Change and Redox-Based Resistive Switching Memories | 9.6 | 161 | Citations (PDF) |
| 134 | Processes and Limitations during Filament Formation and Dissolution in GeSx-based ReRAM Memory Cells | 3.1 | 26 | Citations (PDF) |
| 135 | Transport limits in defect-engineered LaAlO3/SrTiO3 bilayers | 5.0 | 44 | Citations (PDF) |
| 136 | Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems | 32.2 | 594 | Citations (PDF) |
| 137 | On the SET/RESET current asymmetry in electrochemical metallization memory cells | 2.0 | 14 | Citations (PDF) |
| 138 | Origin of the SET Kinetics of the Resistive Switching in Tantalum Oxide Thin Films | 3.4 | 48 | Citations (PDF) |
| 139 | Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance | 3.4 | 59 | Citations (PDF) |
| 140 | (Keynote) Atomic Scale and Interface Interactions in Redox-Based Resistive Switching Memories | 0.4 | 8 | Citations (PDF) |
| 141 | Fast mapping of inhomogeneities in the popular metallic perovskite Nb:SrTiO3by confocal Raman microscopy | 2.0 | 7 | Citations (PDF) |
| 142 | Directed Immobilization of Janus-AuNP in Heterometallic Nanogaps: a Key Step Toward Integration of Functional Molecular Units in Nanoelectronics | 3.1 | 18 | Citations (PDF) |
| 143 | Impact of the Counter‐Electrode Material on Redox Processes in Resistive Switching Memories | 2.9 | 81 | Citations (PDF) |
| 144 | Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes | 3.0 | 155 | Citations (PDF) |
| 145 | Insights into Nanoscale Electrochemical Reduction in a Memristive Oxide: the Role of Three‐Phase Boundaries | 17.0 | 55 | Citations (PDF) |
| 146 | Spectroscopic Proof of the Correlation between Redox‐State and Charge‐Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices | 24.5 | 100 | Citations (PDF) |
| 147 | Influence of stoichiometry on the performance of MIM capacitors from plasma‐assisted ALD SrxTiyOz films | 1.5 | 12 | Citations (PDF) |
| 148 | Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO<sub>3</sub> Resistive Switching Memories | 3.4 | 32 | Citations (PDF) |
| 149 | Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices | 2.0 | 12 | Citations (PDF) |
| 150 | Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches | 2.6 | 69 | Citations (PDF) |
| 151 | Do dislocations act as atomic autobahns for oxygen in the perovskite oxide SrTiO3? | 5.0 | 141 | Citations (PDF) |
| 152 | Understanding the Role of Single Molecular ZnS Precursors in the Synthesis of In(Zn)P/ZnS Nanocrystals | 8.0 | 30 | Citations (PDF) |
| 153 | Simulation and comparison of two sequential logic-in-memory approaches using a dynamic electrochemical metallization cell model | 2.0 | 17 | Citations (PDF) |
| 154 | Physical origins and suppression of Ag dissolution in GeSx-based ECM cells | 2.7 | 32 | Citations (PDF) |
| 155 | Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices | 3.8 | 99 | Citations (PDF) |
| 156 | Atomic Layer Deposition of TiOx/Al2O3 Bilayer Structures for Resistive Switching Memory Applications | 1.7 | 16 | Citations (PDF) |
| 157 | Band alignment at memristive metal-oxide interfaces investigated by hard x-ray photoemission spectroscopy | 3.4 | 9 | Citations (PDF) |
| 158 | A Simulation Study of Oxygen-Vacancy Behavior in Strontium Titanate: Beyond Nearest-Neighbor Interactions | 3.1 | 75 | Citations (PDF) |
| 159 | Electrochemical dynamics of nanoscale metallic inclusions in dielectrics | 13.7 | 614 | Citations (PDF) |
| 160 | Study of atomic layer deposited ZrO2 and ZrO2/TiO2 films for resistive switching application | 1.5 | 17 | Citations (PDF) |
| 161 | Determination of the electrostatic potential distribution in Pt/Fe:SrTiO3/Nb:SrTiO3 thin-film structures by electron holography | 3.4 | 25 | Citations (PDF) |
| 162 | Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories | 15.3 | 240 | Citations (PDF) |
| 163 | Growth and Crystallization of TiO2 Thin Films by Atomic Layer Deposition Using a Novel Amido Guanidinate Titanium Source and Tetrakis-dimethylamido-titanium | 6.7 | 88 | Citations (PDF) |
| 164 | In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure | 13.7 | 340 | Citations (PDF) |
| 165 | Quasi-two-dimensional conducting layer on TiO2 (110) introduced by sputtering as a template for resistive switching | 3.0 | 32 | Citations (PDF) |
| 166 | Electrical Characterization of 4-Mercaptophenylamine-Capped Nanoparticles in a Heterometallic Nanoelectrode Gap | 3.1 | 10 | Citations (PDF) |
| 167 | Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories | 3.4 | 26 | Citations (PDF) |
| 168 | Dysprosium‐Doped (
Ba
,
Sr
)
TiO
3
Thin Films on Nickel Foilsfor Capacitor Applications | 3.7 | 7 | Citations (PDF) |
| 169 | Switching kinetics of electrochemical metallization memory cells | 2.7 | 206 | Citations (PDF) |
| 170 | Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells | 5.0 | 41 | Citations (PDF) |
| 171 | Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells | 5.0 | 54 | Citations (PDF) |
| 172 | Grain growth and crystallinity of ultrafine barium titanate particles prepared by various routes | 5.4 | 11 | Citations (PDF) |
| 173 | Preparation and characterization of GeSx thin-films for resistive switching memories | 1.9 | 24 | Citations (PDF) |
| 174 | Proton defects in BaTiO3: New aspects regarding the re-oxidation of dielectric materials fired in reducing atmospheres | 6.2 | 12 | Citations (PDF) |
| 175 | Electro-degradation and resistive switching of Fe-doped SrTiO3 single crystal | 2.0 | 46 | Citations (PDF) |
| 176 | Stoichiometry dependence and thermal stability of conducting NdGaO3/SrTiO3 heterointerfaces | 3.0 | 36 | Citations (PDF) |
| 177 | Nanobatteries in redox-based resistive switches require extension of memristor theory | 13.7 | 547 | Citations (PDF) |
| 178 | Detection of Fe2+ valence states in Fe doped SrTiO3 epitaxial thin films grown by pulsed laser deposition | 2.7 | 35 | Citations (PDF) |
| 179 | Identification of screw dislocations as fast-forming sites in Fe-doped SrTiO3 | 3.0 | 26 | Citations (PDF) |
| 180 | An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing | 5.0 | 44 | Citations (PDF) |
| 181 | Uniform Complementary Resistive Switching in Tantalum Oxide Using Current Sweeps | 3.4 | 36 | Citations (PDF) |
| 182 | Structure and thermoelectric properties of EuTi(O,N)3 ± δ | 2.0 | 26 | Citations (PDF) |
| 183 | Current Compliance-Dependent Nonlinearity in ${\rm TiO}_{2}$ ReRAM | 3.4 | 39 | Citations (PDF) |
| 184 | Surface deformations as a necessary requirement for resistance switching at the surface of SrTiO3:N | 2.6 | 3 | Citations (PDF) |
| 185 | Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications | 2.6 | 33 | Citations (PDF) |
| 186 | Cluster-like resistive switching of SrTiO3:Nb surface layers | 2.9 | 46 | Citations (PDF) |
| 187 | (Invited) The Role of Electrochemical Interfaces in ReRAM Memory Cells | 0.4 | 2 | Citations (PDF) |
| 188 | Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy | 3.0 | 19 | Citations (PDF) |
| 189 | Feasibility studies for filament detection in resistively switching SrTiO3 devices by employing grazing incidence small angle X-ray scattering | 2.0 | 6 | Citations (PDF) |
| 190 | Resistive switching near electrode interfaces: Estimations by a current model | 2.0 | 3 | Citations (PDF) |
| 191 | Insulator-to-metal transition of SrTiO3:Nb single crystal surfaces induced by Ar+ bombardment | 3.0 | 26 | Citations (PDF) |
| 192 | Evidence for multifilamentary valence changes in resistive switching SrTiO3 devices detected by transmission X-ray microscopy | 3.6 | 37 | Citations (PDF) |
| 193 | Tuning cationic composition of La:EuTiO3−δ films | 3.6 | 8 | Citations (PDF) |
| 194 | (Invited) ALD Grown Functional Oxide Layers for Nonvolatile Resistive Switching Memory Applications | 0.4 | 2 | Citations (PDF) |
| 195 | Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures | 3.4 | 48 | Citations (PDF) |
| 196 | Structural stratification of Sr 1 − x Ca x RuO 3 thin films: Influence of aging process | 1.5 | 0 | Citations (PDF) |
| 197 | Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch | 1.2 | 47 | Citations (PDF) |
| 198 | Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top electrodes | 3.0 | 56 | Citations (PDF) |
| 199 | Redox-Based Resistive Switching Memories | 0.6 | 78 | Citations (PDF) |
| 200 | Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO3 | 2.3 | 28 | Citations (PDF) |
| 201 | Scaling Potential of Local Redox Processes in Memristive SrTiO $_{3}$ Thin-Film Devices | 9.6 | 68 | Citations (PDF) |
| 202 | Memristors: Devices, Models, and Applications [Scanning the Issue] | 9.6 | 183 | Citations (PDF) |
| 203 | Simulation of multilevel switching in electrochemical metallization memory cells | 2.0 | 159 | Citations (PDF) |
| 204 | Electrical Transport through Single Nanoparticles and Nanoparticle Arrays | 3.1 | 28 | Citations (PDF) |
| 205 | Columnar self-assembly of a 3D-persulfurated coronene asterisk. The dominant role of aryl-sulfur bonds | 2.4 | 15 | Citations (PDF) |
| 206 | Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations | 2.6 | 351 | Citations (PDF) |
| 207 | Probing the oxygen vacancy distribution in resistive switching Fe-SrTiO3 metal-insulator-metal-structures by micro-x ray absorption near-edge structure | 2.0 | 47 | Citations (PDF) |
| 208 | Quantum conductance and switching kinetics of AgI-based microcrossbar cells | 2.6 | 148 | Citations (PDF) |
| 209 | Electrochemical metallization cells—blending nanoionics into nanoelectronics? | 4.1 | 111 | Citations (PDF) |
| 210 | Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces | 3.0 | 48 | Citations (PDF) |
| 211 | Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide | 5.0 | 125 | Citations (PDF) |
| 212 | Arylthio-substituted coronenes as tailored building blocks for molecular electronics | 2.7 | 5 | Citations (PDF) |
| 213 | Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces | 33.4 | 228 | Citations (PDF) |
| 214 | Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory | 24.5 | 45 | Citations (PDF) |
| 215 | Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography | 2.6 | 49 | Citations (PDF) |
| 216 | Effects of Moisture on the Switching Characteristics of Oxide‐Based, Gapless‐Type Atomic Switches | 17.0 | 265 | Citations (PDF) |
| 217 | Semiconductive Behavior of Sb Doped SnO2 Thin Films | 0.1 | 2 | Citations (PDF) |
| 218 | Leakage Currents in CVD (Ba,Sr)TiO3 Thin Films | 0.1 | 3 | Citations (PDF) |
| 219 | Microstructure of columnar-grained SrTiO3 and BaTiO3 thin films prepared by chemical solution deposition | 2.5 | 39 | Citations (PDF) |
| 220 | Origin of Imprint in Ferroelectric CSD SrBi2Ta2O9 Thin Films | 0.1 | 3 | Citations (PDF) |
| 221 | Crystallization Kinetics and Texture of Sol-Gel PZT Thin Films | 0.1 | 0 | Citations (PDF) |
| 222 | Imprint in Ferroelectric Thin Films Caused by Screening of an Electric Field in a Thin Surface Layer | 0.1 | 1 | Citations (PDF) |
| 223 | Investigation of the Role of Carbonylchemistry to Pattern Platinum Electrodes | 0.1 | 0 | Citations (PDF) |
| 224 | Fabrication and Characterization of a PZT thin Film Actuator for a Micro Electromechanical Switch Application | 0.1 | 0 | Citations (PDF) |
| 225 | PZT and PMN-PT Thin Film Cantilevers: Comparison between Monomorph and Bimorph Structures | 0.1 | 0 | Citations (PDF) |
| 226 | Structural and Ferroelectric Properties of Epitaxial PbZr0.52Ti0.48O3 and BaTiO3 Thin Films Prepared on SrRuO3/SrTiO3(100) Substrates | 0.1 | 1 | Citations (PDF) |
| 227 | Phase formation and crystal growth of Sr–Bi–Ta–O thin films grown by metalorganic chemical vapor deposition | 2.5 | 0 | Citations (PDF) |
| 228 | Size Effects on Polarization in Epitaxial Ferroelectric Films and the Concept of Ferroelectric Tunnel Junctions Including First Results | 0.1 | 15 | Citations (PDF) |
| 229 | Spectroscopic study of the electric field induced valence change of Fe-defect centers in SrTiO3 | 2.7 | 52 | Citations (PDF) |
| 230 | Nanocomposite thin films for miniaturized multi-layer ceramic capacitors prepared from barium titanate nanoparticle based hybrid solutions | 7.3 | 21 | Citations (PDF) |
| 231 | Forming-Free $\hbox{TiO}_{2}$-Based Resistive Switching Devices on CMOS-Compatible W-Plugs | 3.4 | 40 | Citations (PDF) |
| 232 | Analysis of Transient Currents During Ultrafast Switching of $\hbox{TiO}_{2}$ Nanocrossbar Devices | 3.4 | 48 | Citations (PDF) |
| 233 | Electronic structure of epitaxial Fe-doped SrTiO3thin films | 1.5 | 15 | Citations (PDF) |
| 234 | Single Electron Tunneling through a Tailored Arylthio-coronene | 3.1 | 9 | Citations (PDF) |
| 235 | Redox processes in silicon dioxide thin films using copper microelectrodes | 3.0 | 81 | Citations (PDF) |
| 236 | Capacity based nondestructive readout for complementary resistive switches | 2.6 | 47 | Citations (PDF) |
| 237 | Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays | 3.4 | 114 | Citations (PDF) |
| 238 | Relation Between Enhancement in Growth and Thickness-Dependent Crystallization in ALD TiO[sub 2] Thin Films | 3.1 | 51 | Citations (PDF) |
| 239 | TiO2—a prototypical memristive material | 2.6 | 284 | Citations (PDF) |
| 240 | Electrochemical metallization memories—fundamentals, applications, prospects | 2.6 | 767 | Citations (PDF) |
| 241 | Thermochemical resistive switching: materials, mechanisms, and scaling projections | 1.5 | 175 | Citations (PDF) |
| 242 | Bipolar resistive switching in oxides: Mechanisms and scaling | 2.7 | 10 | Citations (PDF) |
| 243 | Crossbar Logic Using Bipolar and Complementary Resistive Switches | 3.4 | 90 | Citations (PDF) |
| 244 | Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM | 2.5 | 50 | Citations (PDF) |
| 245 | Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches | 17.0 | 333 | Citations (PDF) |
| 246 | The thermal stability of Pt/Ir coated AFM tips for resistive switching measurements | 6.6 | 11 | Citations (PDF) |
| 247 | Synthesis, spark plasma sintering and electrical conduction mechanism in BaTiO3–Cu composites | 6.2 | 21 | Citations (PDF) |
| 248 | Spark plasma sintering of nanocrystalline BaTiO3-powders: Consolidation behavior and dielectric characteristics | 6.2 | 43 | Citations (PDF) |
| 249 | Local conductivity of epitaxial Fe-doped SrTiO3thin films | 1.5 | 13 | Citations (PDF) |
| 250 | Electroforming and Resistance Switching Characteristics of Silver-Doped MSQ With Inert Electrodes | 2.1 | 13 | Citations (PDF) |
| 251 | On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices | 2.0 | 60 | Citations (PDF) |
| 252 | Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition | 1.0 | 23 | Citations (PDF) |
| 253 | High Growth Rate in Atomic Layer Deposition of TiO2 thin films by UV Irradiation | 2.3 | 18 | Citations (PDF) |
| 254 | High temperature conductance characteristics of LaAlO3/SrTiO3-heterostructures under equilibrium oxygen atmospheres | 3.0 | 44 | Citations (PDF) |
| 255 | Morphological and electrical changes in TiO2 memristive devices induced by electroforming and switching | 2.0 | 69 | Citations (PDF) |
| 256 | Comments on the processing of the niobium component for chemical solution derived niobium oxide-based thin-films | 2.7 | 6 | Citations (PDF) |
| 257 | Memory Devices: Energy–Space–Time Tradeoffs | 9.6 | 51 | Citations (PDF) |
| 258 | Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4 Thin Films | 24.5 | 228 | Citations (PDF) |
| 259 | Coexistence of Filamentary and Homogeneous Resistive Switching in Fe‐Doped SrTiO3 Thin‐Film Memristive Devices | 24.5 | 354 | Citations (PDF) |
| 260 | Percolative BaTiO3–Ni composite nanopowders from alkoxide-mediated synthesis | 6.2 | 21 | Citations (PDF) |
| 261 | Observation of unipolar resistance switching in silver doped methyl-silsesquioxane | 2.7 | 5 | Citations (PDF) |
| 262 | Function by defects at the atomic scale – New concepts for non-volatile memories | 1.1 | 49 | Citations (PDF) |
| 263 | Compositional Substitutions and Aliovalent Doping of BaTiO
3
‐Based Thin Films on Nickel Foils Prepared by Chemical Solution Deposition | 3.7 | 20 | Citations (PDF) |
| 264 | Electronic Conduction Mechanisms in BaTiO
3
–Ni Composites with Ultrafine Microstructure Obtained by Spark Plasma Sintering | 3.7 | 11 | Citations (PDF) |
| 265 | Complementary resistive switches for passive nanocrossbar memories | 33.4 | 1,373 | Citations (PDF) |
| 266 | Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films | 2.0 | 59 | Citations (PDF) |
| 267 | Ferroelectric field effect transistors using very thin ferroelectric polyvinylidene fluoride copolymer films as gate dielectrics | 2.0 | 28 | Citations (PDF) |
| 268 | Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise | 2.0 | 96 | Citations (PDF) |
| 269 | Liquid Injection MOCVD Grown Binary Oxides and Ternary Rare-Earth Oxide as Alternate Gate-Oxides for Logic Devices | 0.4 | 0 | Citations (PDF) |
| 270 | Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells | 2.0 | 107 | Citations (PDF) |
| 271 | SrTiO
3
thin film capacitors on silicon substrates with insignificant interfacial passive layers | 3.0 | 24 | Citations (PDF) |
| 272 | Formation Sequence of Lead Platinum Interfacial Phases in Chemical Solution Deposition Derived Pb(Zr1−xTix)O3Thin Films | 6.7 | 10 | Citations (PDF) |
| 273 | Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions | 3.0 | 87 | Citations (PDF) |
| 274 | Electronic transport properties of individual 4,4′-bis(mercaptoalkyl)-biphenyl derivatives measured in STM-based break junctions | 2.7 | 10 | Citations (PDF) |
| 275 | PbTiO3 nanoparticle precursors for chemical solution deposited electroceramic thin films | 2.7 | 2 | Citations (PDF) |
| 276 | Crystallisation kinetics in sol-gel PbTiO3films by real-time XRD analysis | 0.2 | 0 | Citations (PDF) |
| 277 | The influence of copper top electrodes on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy | 3.0 | 81 | Citations (PDF) |
| 278 | Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3 | 2.0 | 101 | Citations (PDF) |
| 279 | Emerging Non-Volatile Memories by Exploiting Redox Reactions on the Nanoscale | 0.4 | 1 | Citations (PDF) |
| 280 | Impact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cells | 2.0 | 74 | Citations (PDF) |
| 281 | Embedded ferroelectric nanostructure arrays | 2.6 | 8 | Citations (PDF) |
| 282 | Liquid Injection Atomic Layer Deposition of Metallic Ru Thin Films from Ru(tmhd)3 and of High-k TiO2 Thin Films from Ti(O-i-Pr)2(tmhd)2 | 0.4 | 4 | Citations (PDF) |
| 283 | Liquid Injection Atomic Layer Deposition of Crystalline TiO[sub 2] Thin Films with a Smooth Morphology from Ti(O-i-Pr)[sub 2](DPM)[sub 2] | 3.1 | 27 | Citations (PDF) |
| 284 | Electrochemical Reactions in Nanoionics - Towards Future Resistive Switching Memories | 0.4 | 7 | Citations (PDF) |
| 285 | Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges | 24.5 | 4,870 | Citations (PDF) |
| 286 | Self-neutralization via electroreduction in photoemission from SrTiO3 single crystals | 2.5 | 10 | Citations (PDF) |
| 287 | Dielectric properties of highly c‐axis oriented chemical solution deposition derived SrBi 4 Ti 4 O 15 thin films | 1.5 | 4 | Citations (PDF) |
| 288 | Field‐Emission Resonances at Tip/α,ω‐Mercaptoalkyl Ferrocene/Au Interfaces Studied by STM | 11.5 | 34 | Citations (PDF) |
| 289 | Integration of “Ge Se1−” in crossbar arrays for non-volatile memory applications | 2.7 | 25 | Citations (PDF) |
| 290 | Electrical properties of Pt interconnects for passive crossbar memory arrays | 2.7 | 5 | Citations (PDF) |
| 291 | High density 3D memory architecture based on the resistive switching effect | 1.1 | 150 | Citations (PDF) |
| 292 | Structural ordering of ω-ferrocenylalkanethiol monolayers on Au(111) studied by scanning tunneling microscopy | 1.7 | 18 | Citations (PDF) |
| 293 | Translational transitions at domain boundaries in octanethiol monolayers on Au(111) | 1.7 | 4 | Citations (PDF) |
| 294 | Resistively switching Pt/spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography | 2.7 | 26 | Citations (PDF) |
| 295 | Resistive non-volatile memory devices (Invited Paper) | 2.7 | 130 | Citations (PDF) |
| 296 | Abnormal bipolar-like resistance change behavior induced by symmetric electroforming in Pt/TiO2/Pt resistive switching cells | 2.6 | 35 | Citations (PDF) |
| 297 | Growth of Noble Metal Ru Thin Films by Liquid Injection Atomic Layer Deposition | 3.1 | 27 | Citations (PDF) |
| 298 | A Nonvolatile Memory With Resistively Switching Methyl-Silsesquioxane | 3.4 | 33 | Citations (PDF) |
| 299 | Cu-Adatom-Mediated Bonding in Close-Packed Benzoate/Cu(110)-Systems | 3.6 | 30 | Citations (PDF) |
| 300 | Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories | 3.0 | 296 | Citations (PDF) |
| 301 | Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell | 3.4 | 176 | Citations (PDF) |
| 302 | Faradaic currents during electroforming of resistively switching Ag–Ge–Se type electrochemical metallization memory cells | 2.7 | 51 | Citations (PDF) |
| 303 | Reliability analysis of the low resistance state stability of Ge0.3Se0.7 based solid electrolyte nonvolatile memory cells | 3.0 | 23 | Citations (PDF) |
| 304 | Radiofrequency sputter deposition of germanium–selenide thin films for resistive switching | 1.9 | 29 | Citations (PDF) |
| 305 | Investigation of the amorphous to crystalline phase transition of chemical solution deposited Pb(Zr0.3Ti0.7)O3 thin films by soft X-ray absorption and soft X-ray emission spectroscopy | 2.7 | 20 | Citations (PDF) |
| 306 | Nanoimprint for future non-volatile memory and logic devices | 2.7 | 24 | Citations (PDF) |
| 307 | Thin films of high- dysprosium scandate prepared by metal organic chemical vapor deposition for metal–insulator–metal capacitor applications | 2.3 | 19 | Citations (PDF) |
| 308 | Reduction of film thickness for chemical solution deposited PbZr0.3Ti0.7O3 thin films revealing no size effects and maintaining high remanent polarization and low coercive field | 1.9 | 12 | Citations (PDF) |
| 309 | Electrical and optical properties of chemical solution deposited barium hafnate titanate thin films | 1.9 | 20 | Citations (PDF) |
| 310 | Controlled local filament growth and dissolution in Ag–Ge–Se | 2.0 | 31 | Citations (PDF) |
| 311 | Low current resistive switching in Cu–SiO2 cells | 3.0 | 193 | Citations (PDF) |
| 312 | Realization of regular arrays of nanoscale resistive switching blocks in thin films of Nb-doped SrTiO3 | 3.0 | 57 | Citations (PDF) |
| 313 | Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere | 2.0 | 276 | Citations (PDF) |
| 314 | Tungsten coatings by chemical solution deposition for ceramic electrodes in fluorescent tubes | 7.3 | 7 | Citations (PDF) |
| 315 | Dynamics of ferroelectric nanodomains in BaTiO3epitaxial thin films via piezoresponse force microscopy | 2.6 | 86 | Citations (PDF) |
| 316 | Size effects in nanoscale ferroelectrics | 6.0 | 24 | Citations (PDF) |
| 317 | Growth Behavior of Atomic-Layer-Deposited Pb(Zr,Ti)O[sub x] Thin Films on Planar Substrate and Three-Dimensional Hole Structures | 3.1 | 25 | Citations (PDF) |
| 318 | Striped Phase of Mercaptoalkylferrocenes on Au(111) with a Potential for Nanoscale Surface Patterning | 3.6 | 10 | Citations (PDF) |
| 319 | THIN FILMS OF UNDOPED LEAD TITANATE: MORPHOLOGY AND ELECTRICAL PROPERTIES | 0.6 | 6 | Citations (PDF) |
| 320 | LARGE AREA PIEZOELECTRIC ACTUATORS USING METAL FOIL SUBSTRATES WITH Pb(Zrx,Ti1 - x)O3 THIN FILMS | 0.6 | 3 | Citations (PDF) |
| 321 | Method to distinguish ferroelectric from nonferroelectric origin in case of resistive switching in ferroelectric capacitors | 3.0 | 91 | Citations (PDF) |
| 322 | Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode | 3.0 | 122 | Citations (PDF) |
| 323 | Direct electrical characterization of embedded ferroelectric lead titanate nanoislands | 2.0 | 7 | Citations (PDF) |
| 324 | Effect of in-plane shear strain on phase states and dielectric properties of epitaxial ferroelectric thin films | 2.0 | 15 | Citations (PDF) |
| 325 | Wedgelike ultrathin epitaxial BaTiO3 films for studies of scaling effects in ferroelectrics | 3.0 | 32 | Citations (PDF) |
| 326 | An integrated microelectromechanical microwave switch based on piezoelectric actuation | 2.0 | 11 | Citations (PDF) |
| 327 | Aging-induced dielectric relaxation in barium titanate ceramics | 3.0 | 31 | Citations (PDF) |
| 328 | Resistive Switching in Ge0.3Se0.7 Films by Means of Copper Ion Migration | 2.7 | 10 | Citations (PDF) |
| 329 | Liquid Injection Atomic Layer Deposition of TiO[sub x] Films Using Ti[OCH(CH[sub 3])[sub 2]][sub 4] | 3.1 | 19 | Citations (PDF) |
| 330 | On the origin of bistable resistive switching in metal organic charge transfer complex memory cells | 3.0 | 72 | Citations (PDF) |
| 331 | Surface layer of SrRuO3 epitaxial thin films under oxidizing and reducing conditions | 2.0 | 27 | Citations (PDF) |
| 332 | Effects of Thermal Annealing on Lead Zirconate Titanate Thin Film Capacitors with Platinum Electrodes | 3.1 | 3 | Citations (PDF) |
| 333 | Liquid Injection ALD of Pb(Zr,Ti)O[sub x] Thin Films by a Combination of Self-Regulating Component Oxide Processes | 3.1 | 28 | Citations (PDF) |
| 334 | Thin Films of HfO[sub 2] for High-k Gate Oxide Applications from Engineered Alkoxide- and Amide-Based MOCVD Precursors | 3.1 | 24 | Citations (PDF) |
| 335 | Self Assembly of Mixed Monolayers of Mercaptoundecylferrocene and Undecanethiol studied by STM | 0.3 | 11 | Citations (PDF) |
| 336 | Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt∕TiO[sub 2]∕Pt Stack | 2.3 | 308 | Citations (PDF) |
| 337 | Liquid Injection MOCVD of Dysprosium Scandate Films | 3.1 | 30 | Citations (PDF) |
| 338 | Temperature-induced Phase Transitions in Micro-, Submicro-, and Nanocrystalline NaNbO3 | 3.1 | 90 | Citations (PDF) |
| 339 | Electrical and Structural Characterization of Biphenylethanethiol SAMs | 3.1 | 18 | Citations (PDF) |
| 340 | Thickness dependence of intrinsic dielectric response and apparent interfacial capacitance in ferroelectric thin films | 2.0 | 29 | Citations (PDF) |
| 341 | Polarization and lattice strains in epitaxial BaTiO3 films grown by high-pressure sputtering | 2.0 | 64 | Citations (PDF) |
| 342 | Growth of ternary PbTiOx films in a combination of binary oxide atomic layer depositions | 2.0 | 26 | Citations (PDF) |
| 343 | Raman scattering studies on nanocrystalline BaTiO3 Part II—consolidated polycrystalline ceramics | 1.9 | 87 | Citations (PDF) |
| 344 | Raman scattering studies on nanocrystalline BaTiO3 Part I—isolated particles and aggregates | 1.9 | 247 | Citations (PDF) |
| 345 | Liquid injection MOCVD of TiO2 and SrTiO3 thin films from [Ti(OPri)2(tbaoac)2]: Film properties and compatibility with [Sr(thd)2] | 5.7 | 10 | Citations (PDF) |
| 346 | LI-MOCVD of HfO2 thin films using engineered amide based Hf precursors | 5.7 | 18 | Citations (PDF) |
| 347 | Morphology control of highly-transparent indium tin oxide thin films prepared by a chlorine-reduced metallo-organic decomposition technique | 1.9 | 11 | Citations (PDF) |
| 348 | Comparison of three different architectures for active resistive memories | 2.4 | 7 | Citations (PDF) |
| 349 | Nanoionics-based resistive switching memories | 33.4 | 4,869 | Citations (PDF) |
| 350 | Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$ | 2.7 | 370 | Citations (PDF) |
| 351 | Nanoscale resistive switching in SrTiO3 thin films | 2.0 | 157 | Citations (PDF) |
| 352 | Enhanced stability of platinized silicon substrates using an unconventional adhesion layer deposited by CSD for high temperature dielectric thin film deposition | 2.5 | 27 | Citations (PDF) |
| 353 | Photoemission study of SrTiO3 surface layers instability upon metal deposition | 2.5 | 25 | Citations (PDF) |
| 354 | Ferromagnetic 0–π Josephson junctions | 2.5 | 15 | Citations (PDF) |
| 355 | Microstructure and electrical properties of BaTiO3 and (Ba,Sr)TiO3 ferroelectric thin films on nickel electrodes | 2.7 | 19 | Citations (PDF) |
| 356 | Chemical modifications of Pb(Zr0.3,Ti0.7)O3 precursor solutions and their influence on the morphological and electrical properties of the resulting thin films | 2.7 | 50 | Citations (PDF) |
| 357 | Noncentrosymmetric phase of submicron NaNbO3 crystallites | 2.0 | 19 | Citations (PDF) |
| 358 | Sample-tip interaction of piezoresponse force microscopy in ferroelectric nanostructures | 2.6 | 24 | Citations (PDF) |
| 359 | Impedance spectroscopy of TiO2 thin films showing resistive switching | 3.0 | 101 | Citations (PDF) |
| 360 | Influence of Thickness and Zr Content on Ba(TixZr1-x)O3Thin Films | 0.6 | 2 | Citations (PDF) |
| 361 | Mixed amide–malonate compound of hafnium as a novel monomeric precursor for MOCVD of HfO2thin films | 7.3 | 18 | Citations (PDF) |
| 362 | A Novel Reference Scheme for Reading Passive Resistive Crossbar Memories | 2.1 | 51 | Citations (PDF) |
| 363 | STM Study of Mixed Alkanethiol/Biphenylthiol Self-Assembled Monolayers on Au(111) | 3.6 | 55 | Citations (PDF) |
| 364 | Consolidation, Microstructure and Crystallography of Dense NaNbO 3 Ceramics with Ultra-Fine Grain Size | 1.6 | 19 | Citations (PDF) |
| 365 | Resistive switching of rose bengal devices: A molecular effect? | 2.0 | 50 | Citations (PDF) |
| 366 | Influence of adsorbates on the piezoresponse of KNbO3 | 1.5 | 11 | Citations (PDF) |
| 367 | Molecular structure of ferrocenethiol islands embedded into alkanethiol self-assembled monolayers by UHV-STM | 1.5 | 19 | Citations (PDF) |
| 368 | Effects of Thermal Annealing on the Structure of Ferroelectric Thin Films | 3.7 | 12 | Citations (PDF) |
| 369 | Preparation, Processing, and Characterization of Nano-Crystalline BaTiO3 Powders and Ceramics Derived from Microemulsion-Mediated Synthesis | 3.7 | 53 | Citations (PDF) |
| 370 | Electrical Conductivity of Epitaxial SrTiO
3
Thin Films as a Function of Oxygen Partial Pressure and Temperature | 3.7 | 66 | Citations (PDF) |
| 371 | Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 | 33.4 | 1,656 | Citations (PDF) |
| 372 | Capacitive-resistive nondriven plateline cell architecture for RRAM technology | 2.4 | 0 | Citations (PDF) |
| 373 | Protected nanoelectrodes of two different metals with 30nm gapwidth and access window | 2.7 | 9 | Citations (PDF) |
| 374 | Metallic nanogaps with access windows for liquid based systems | 2.0 | 8 | Citations (PDF) |
| 375 | Laser annealing of BST thin films with reduced cracking at an elevated temperature | 4.2 | 15 | Citations (PDF) |
| 376 | Transport of hydrogen species in a single crystal SrTiO3 | 3.1 | 20 | Citations (PDF) |
| 377 | Preparation and characterisation of amorphous Cu:7,7,8,8-Tetracyanoquinodimethane thin films with low surface roughness via thermal co-deposition | 1.9 | 25 | Citations (PDF) |
| 378 | Variable Size and Shape Distribution of Ferroelectric Nanoislands by Chemical Mechanical Polishing | 11.5 | 9 | Citations (PDF) |
| 379 | Structural, dielectric and electromechanical study of Hf-substituted BaTiO3 thin films fabricated by CSD | 2.5 | 9 | Citations (PDF) |
| 380 | Simultaneous measurement of the piezoelectric and dielectric response of nanoscale ferroelectric capacitors by an atomic force microscopy based approach | 2.5 | 10 | Citations (PDF) |
| 381 | Electrical properties of the grain boundaries of oxygen ion conductors: Acceptor-doped zirconia and ceria | 35.6 | 705 | Citations (PDF) |
| 382 | MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors | 1.7 | 18 | Citations (PDF) |
| 383 | Liquid-Injection MOCVD of ZrO2 Thin Films using Zirconium Bis(diethlyamido)-bis(di-tert-butylmalonato) as a Novel Precursor | 1.7 | 26 | Citations (PDF) |
| 384 | Microemulsion mediated synthesis of nanocrystalline BaTiO3: possibilities, potential and perspectives | 0.4 | 14 | Citations (PDF) |
| 385 | 0−πJosephson Tunnel Junctions with Ferromagnetic Barrier | 8.2 | 156 | Citations (PDF) |
| 386 | Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition | 3.0 | 41 | Citations (PDF) |
| 387 | Fatigue effect in ferroelectric PbZr1−xTixO3 thin films | 2.0 | 39 | Citations (PDF) |
| 388 | Hysteretic resistance concepts in ferroelectric thin films | 2.0 | 70 | Citations (PDF) |
| 389 | Scaling of structure and electrical properties in ultrathin epitaxial ferroelectric heterostructures | 2.0 | 115 | Citations (PDF) |
| 390 | Density inhomogeneity in ferroelectric thin films | 3.0 | 6 | Citations (PDF) |
| 391 | Composition influences on the electrical and electromechanical properties of lead zirconate titanate thin films | 2.0 | 23 | Citations (PDF) |
| 392 | Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film | 2.0 | 51 | Citations (PDF) |
| 393 | Liquid-Injection Atomic Layer Deposition of TiO[sub x] and Pb–Ti–O Films | 3.1 | 18 | Citations (PDF) |
| 394 | Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films | 3.0 | 120 | Citations (PDF) |
| 395 | Structural investigations of Pt∕TiOx electrode stacks for ferroelectric thin film devices | 2.0 | 17 | Citations (PDF) |
| 396 | Polarization states of polydomain epitaxialPb(Zr1−xTix)O3thin films and their dielectric properties | 3.4 | 79 | Citations (PDF) |
| 397 | Unit-cell scale mapping of ferroelectricity and tetragonality in epitaxial ultrathin ferroelectric films | 33.4 | 403 | Citations (PDF) |
| 398 | Contact mode potentiometric measurements with an atomic force microscope on high resistive perovskite thin films | 6.2 | 4 | Citations (PDF) |
| 399 | Improved PbZr0.52Ti0.48O3 film quality on SrRuO3/SrTiO3 substrates | 1.9 | 12 | Citations (PDF) |
| 400 | Microemulsion mediated synthesis of nanocrystalline (Kx,Na1−x)NbO3 powders | 1.9 | 48 | Citations (PDF) |
| 401 | Current status and challenges of ferroelectric memory devices | 2.7 | 179 | Citations (PDF) |
| 402 | Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9 film for high density ferroelectric random access memory applications at low voltage operation | 1.9 | 7 | Citations (PDF) |
| 403 | Ionic conduction in zirconia films of nanometer thickness | 8.7 | 109 | Citations (PDF) |
| 404 | Influence of the morphology of ferroelectric SrBi2Ta2O9 thin films deposited by metal organic decomposition on its electrical characteristics | 6.6 | 15 | Citations (PDF) |
| 405 | The origin of faceting of ultraflat gold films epitaxially grown on mica | 6.6 | 59 | Citations (PDF) |
| 406 | Characterization of Chemical Solution Deposition-Derived Lead Hafnate Titanate Thin Films | 3.7 | 11 | Citations (PDF) |
| 407 | Progress in the Synthesis of Nanocrystalline BaTiO
3
Powders for MLCC | 2.2 | 310 | Citations (PDF) |
| 408 | SrZrO3Nanopatterning Using Self-Organized SrRuO3as a Template | 24.5 | 15 | Citations (PDF) |
| 409 | Registered Deposition of Nanoscale Ferroelectric Grains by Template-Controlled Growth | 24.5 | 57 | Citations (PDF) |
| 410 | Fabrication and electrical characterisation of Zr-substituted BaTiO3 thin films | 2.5 | 27 | Citations (PDF) |
| 411 | Nanosize ferroelectric oxides – tracking down the superparaelectric limit | 2.5 | 130 | Citations (PDF) |
| 412 | Electromechanical properties of Ba(Ti1-xZrx)O3 thin films | 2.5 | 23 | Citations (PDF) |
| 413 | Crystallization Temperature Limit of (Ba,Sr)TiO3 Thin Films Prepared by a Non Oxocarbonate Phase Forming CSD Route | 2.7 | 18 | Citations (PDF) |
| 414 | A NOVEL DESIGN FOR INTEGRATED RF-MEM SWITCHES USING FERROELECTRIC THIN FILMS | 0.6 | 4 | Citations (PDF) |
| 415 | NEW RESULTS ON FATIGUE AND IMPRINT EFFECT | 0.6 | 3 | Citations (PDF) |
| 416 | Rectangular (3 × 2√3) Superlattice of a Dodecanethiol Self-Assembled Monolayer on Au(111) Observed by Ultra-High-Vacuum Scanning Tunneling Microscopy | 2.7 | 19 | Citations (PDF) |
| 417 | Nonlinear Electrical Properties of Grain Boundaries in Oxygen Ion Conductors: Acceptor-Doped Ceria | 2.3 | 46 | Citations (PDF) |
| 418 | Analysis of shape effects on the piezoresponse in ferroelectric nanograins with and without adsorbates | 3.0 | 40 | Citations (PDF) |
| 419 | Schottky barrier formed by network of screw dislocations in SrTiO3 | 3.0 | 24 | Citations (PDF) |
| 420 | Effects of ferroelectric fatigue on the piezoelectric properties (d33) of tetragonal lead zirconate titanate thin films | 3.0 | 16 | Citations (PDF) |
| 421 | Monte Carlo simulations of imprint behavior in ferroelectrics | 3.0 | 13 | Citations (PDF) |
| 422 | Impact of the top-electrode material on the permittivity of single-crystalline Ba0.7Sr0.3TiO3 thin films | 3.0 | 43 | Citations (PDF) |
| 423 | Enhancement of p-type conductivity in nanocrystalline BaTiO3 ceramics | 3.0 | 57 | Citations (PDF) |
| 424 | Contributions to in-plane piezoresponse on axially symmetrical samples | 1.5 | 12 | Citations (PDF) |
| 425 | Effect of anisotropic in-plane strains on phase states and dielectric properties of epitaxial ferroelectric thin films | 3.0 | 80 | Citations (PDF) |
| 426 | Effect of ozone treatment on the electrical properties of (Ba0.7Sr0.3)TiO3 thin films | 2.0 | 5 | Citations (PDF) |
| 427 | Integration of ferroelectric lead titanate nanoislands for direct hysteresis measurements | 3.0 | 28 | Citations (PDF) |
| 428 | Scaling the Ferroelectric Field Effect Transistor | 0.6 | 3 | Citations (PDF) |
| 429 | Metal-organic chemical-vapor deposition of (Ba,Sr)TiO3: Nucleation and growth on Pt-(111) | 2.0 | 14 | Citations (PDF) |
| 430 | Nanoscale polarization relaxation in a polycrystalline ferroelectric thin film: Role of local environments | 3.0 | 29 | Citations (PDF) |
| 431 | MOCVD GROWTH OF (Pb,Ba)(Zr,Ti)O3 THIN FILMS FOR MEMORY APPLICATIONS | 0.6 | 1 | Citations (PDF) |
| 432 | A DYNAMIC REFERENCE SCHEME FOR NONVOLATILE FERROELECTRIC RAM | 0.6 | 1 | Citations (PDF) |
| 433 | Dynamic leakage current compensation in ferroelectric thin-film capacitor structures | 3.0 | 160 | Citations (PDF) |
| 434 | Effects of reversible and irreversible ferroelectric switchings on the piezoelectric large-signal response of lead zirconate titanate thin films | 2.0 | 13 | Citations (PDF) |
| 435 | High-kDielectric Materials by Metalorganic Chemical Vapor Deposition: Growth and Characterization | 0.6 | 4 | Citations (PDF) |
| 436 | Low Temperature Microwave Properties of Bismuth Based Dielectric Ceramics | 0.6 | 3 | Citations (PDF) |
| 437 | Nonlinear Electrical Properties of Grain Boundaries in Oxygen Ion Conductors | 2.3 | 15 | Citations (PDF) |
| 438 | Oxygen vacancy migration and time-dependent leakage current behavior of Ba0.3Sr0.7TiO3 thin films | 3.0 | 106 | Citations (PDF) |
| 439 | Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition | 2.0 | 1,071 | Citations (PDF) |
| 440 | SrTa2O6 thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates | 2.0 | 45 | Citations (PDF) |
| 441 | Comparison of in-plane and out-of-plane optical amplification in AFM measurements | 1.5 | 38 | Citations (PDF) |
| 442 | Theoretical current-voltage characteristics of ferroelectric tunnel junctions | 3.4 | 416 | Citations (PDF) |
| 443 | Phase states of nanocrystalline ferroelectric ceramics and their dielectric properties | 2.0 | 28 | Citations (PDF) |
| 444 | Misfit dislocations in nanoscale ferroelectric heterostructures | 3.0 | 136 | Citations (PDF) |
| 445 | Mechanical force sensors using organic thin-film transistors | 2.0 | 95 | Citations (PDF) |
| 446 | Polymorphism in Micro-, Submicro-, and Nanocrystalline NaNbO3 | 2.7 | 129 | Citations (PDF) |
| 447 | A New Phase of the c(4 × 2) Superstructure of Alkanethiols Grown by Vapor Phase Deposition on Gold | 3.6 | 58 | Citations (PDF) |
| 448 | Fabrication of arrays of SrZrO3nanowires by pulsed laser deposition | 2.6 | 21 | Citations (PDF) |
| 449 | Effect of interfaces in Monte Carlo computer simulations of ferroelectric materials | 3.0 | 13 | Citations (PDF) |
| 450 | Interface-related thickness dependence of the tunability in BaSrTiO3 thin films | 3.0 | 27 | Citations (PDF) |
| 451 | Use of reactive gases with broad-beam radio frequency ion sources for industrial applications | 1.8 | 5 | Citations (PDF) |
| 452 | Effects of ferroelectric switching on the piezoelectric small-signal response (d33) and electrostriction (M33) of lead zirconate titanate thin films | 2.0 | 29 | Citations (PDF) |
| 453 | Electrostrictive resonances in (Ba0.7Sr0.3)TiO3 thin filmsat microwave frequencies | 3.0 | 77 | Citations (PDF) |
| 454 | A New Concept for Using Ferroelectric Transistors in Nonvolatile Memories | 0.6 | 4 | Citations (PDF) |
| 455 | MOCVD of SrTa2O6Thin Films for High-k Applications | 0.1 | 3 | Citations (PDF) |
| 456 | Effect of different annealing procedures on the microstructure and the electrical properties of CSD derived (Ba,Sr)TiO 3 thin films. | 0.1 | 5 | Citations (PDF) |
| 457 | Scaling Effect on the Dielectric Constant in Ba(TixZr1?x)O3 Thin Films | 2.0 | 5 | Citations (PDF) |
| 458 | Nanocrystalline Alkaline Earth Titanates and Their Conductivity Characteristics Under Changing Oxygen Ambients | 2.0 | 5 | Citations (PDF) |
| 459 | Fabrication of stress-induced SrRuO3 nanostructures by pulsed laser deposition | 2.5 | 7 | Citations (PDF) |
| 460 | (Ba,Sr)TiO3 thin film growth in a batch processing MOCVD reactor | 6.2 | 15 | Citations (PDF) |
| 461 | Reversible and irreversible piezoelectric and ferroelectric response in ferroelectric ceramics and thin films | 6.2 | 47 | Citations (PDF) |
| 462 | Characterization of Ba(Ti,Zr)O3 ceramics sintered under reducing conditions | 6.2 | 19 | Citations (PDF) |
| 463 | In-situ compensation of the parasitic capacitance for nanoscale hysteresis measurements | 6.2 | 22 | Citations (PDF) |
| 464 | Interfacial reactions and microstructure of BaTiO3 films prepared using fluoride precursor method | 6.6 | 9 | Citations (PDF) |
| 465 | Bismuth zinc niobate (Bi1.5ZnNb1.5O7) ceramics derived from metallo-organic decomposition precursor solution | 2.3 | 41 | Citations (PDF) |
| 466 | Space charge concept for acceptor-doped zirconia and ceria and experimental evidences | 3.1 | 66 | Citations (PDF) |
| 467 | Laser crystallization studies of barium strontium titanate thin films | 6.2 | 17 | Citations (PDF) |
| 468 | Resistive donor-doped SrTiO3 sensors: I, basic model for a fast sensor response | 7.6 | 52 | Citations (PDF) |
| 469 | Microstructure and interfaces of HfO2 thin films grown on silicon substrates | 1.9 | 23 | Citations (PDF) |
| 470 | Chemical solution deposition of electronic oxide films | 0.7 | 457 | Citations (PDF) |
| 471 | Mononuclear precursor for MOCVD of HfO2 thin filmsElectronic supplementary information (ESI) available: TG/DTA, and isothermal studies, RBS and AFM data of HfO2 film. See http://www.rsc.org/suppdata/cc/b4/b405015k/ | 3.4 | 28 | Citations (PDF) |
| 472 | Inhomogeneous Local Conductivity Induced by Thermal Reduction in BaTiO3 Thin Films and Single Crystals | 0.6 | 3 | Citations (PDF) |
| 473 | Size effects in ultrathin epitaxial ferroelectric heterostructures | 3.0 | 118 | Citations (PDF) |
| 474 | Piezoresponse in the light of surface adsorbates: Relevance of defined surface conditions for perovskite materials | 3.0 | 68 | Citations (PDF) |
| 475 | Effects of the top-electrode size on the piezoelectric properties (d33 and S) of lead zirconate titanate thin films | 2.0 | 34 | Citations (PDF) |
| 476 | Structured oxide ceramics by a sodium chloride moulding technique | 2.5 | 2 | Citations (PDF) |
| 477 | Experimental and numerical investigations of heat transport and crystallization kinetics in laser-induced modification of barium strontium titanate thin films | 2.5 | 15 | Citations (PDF) |
| 478 | Preparation and Characterisation of High Density, High Purity Lanthanum Aluminate Bulk Ceramics | 2.0 | 13 | Citations (PDF) |
| 479 | SrBi2Ta2O9 ferroelectric thin film capacitors: degradation in a hydrogen ambient | 2.5 | 22 | Citations (PDF) |
| 480 | Mononuclear Mixedβ-Ketoester-alkoxide Compound of Titanium as a Promising Precursor for Low-Temperature MOCVD of TiO2 Thin Films | 1.7 | 26 | Citations (PDF) |
| 481 | An interfacial defect layer observed at (Ba,Sr)TiO3/Pt interface | 1.9 | 25 | Citations (PDF) |
| 482 | Lamellar ferroelectric domains in PbTiO3 grains imaged and manipulated by AFM | 1.7 | 12 | Citations (PDF) |
| 483 | Transmission Electron Microscopy Investigation of Pt/Ba
0.7
Sr
0.3
TiO
3
/Pt Capacitors with Different Annealing Processes | 3.7 | 7 | Citations (PDF) |
| 484 | Short-time piezoelectric measurements in ferroelectric thin films using a double-beam laser interferometer | 1.5 | 49 | Citations (PDF) |
| 485 | Resistive switching in metal–ferroelectric–metal junctions | 3.0 | 286 | Citations (PDF) |
| 486 | Phase diagrams and physical properties of single-domain epitaxialPb(Zr1−xTix)O3thin films | 3.4 | 299 | Citations (PDF) |
| 487 | Frequency and temperature dependence of the relative permittivity in ferroelectrics: Monte-Carlo simulation study | 2.0 | 5 | Citations (PDF) |
| 488 | Coercive field of ultrathin Pb(Zr0.52Ti0.48)O3 epitaxial films | 3.0 | 123 | Citations (PDF) |
| 489 | Influence of Asymmetric Oxide Electrode Structures on the Interface Capacity and the Failure Mechanisms in PZT Thin Films | 0.6 | 8 | Citations (PDF) |
| 490 | Theoretical calculations and performance results of a PZT thin film actuator | 2.6 | 23 | Citations (PDF) |
| 491 | Towards the limit of ferroelectric nanosized grains | 2.6 | 71 | Citations (PDF) |
| 492 | Thickness Dependence of Piezoelectric Properties for PZT Thin Films with Regard to MEMS Applications | 0.6 | 15 | Citations (PDF) |
| 493 | Early self-assembled stages in epitaxial SrRuO3 on LaAlO3 | 3.0 | 49 | Citations (PDF) |
| 494 | Reversible and irreversible polarization processes in ferroelectric ceramics and thin films | 2.0 | 72 | Citations (PDF) |
| 495 | Surface treatment effects on the thickness dependence of the remanent polarization of PbZr0.52Ti0.48O3 capacitors | 3.0 | 30 | Citations (PDF) |
| 496 | Observation of Vacancy Defect Migration in the Cation Sublattice of Complex Oxides byO18Tracer Experiments | 8.2 | 109 | Citations (PDF) |
| 497 | Sharp ferroelectric phase transition in strained single-crystalline SrRuO3/Ba0.7Sr0.3TiO3/SrRuO3 capacitors | 3.0 | 38 | Citations (PDF) |
| 498 | Non-Linear Imprint Behavior of PZT Thin Films | 0.6 | 23 | Citations (PDF) |
| 499 | Investigation of the High Frequency Properties of BST Thin Films--A Comparison of Three Different Commonly Used Methods | 0.6 | 1 | Citations (PDF) |
| 500 | Comparison of Hafnium Precursors for the MOCVD of HfO 2 for Gate Dielectric Applications | 0.6 | 1 | Citations (PDF) |
| 501 | High Speed and High Resolution Measurements on Submicron Capacitors for FeRAM Application | 0.6 | 0 | Citations (PDF) |
| 502 | MOCVD of (Ba,Sr)TiO 3 : Nucleation and Growth | 0.6 | 1 | Citations (PDF) |
| 503 | Shift of Phase Transition Temperature in Strontium Titanate Thin Films | 0.6 | 17 | Citations (PDF) |
| 504 | MOCVD of (Ba,Sr)TiO3: Nucleation and Growth | 0.6 | 4 | Citations (PDF) |
| 505 | Investigation of the High Frequency Properties of BST Thin Films—A Comparison of Three Different Commonly Used Methods | 0.6 | 2 | Citations (PDF) |
| 506 | Characterization of BaTiO 3 --BaZrO 3 Solid Solution Thin Films Prepared by MOCVD | 0.6 | 1 | Citations (PDF) |
| 507 | Piezoresponse force microscopy of lead titanate nanograins possibly reaching the limit of ferroelectricity | 3.0 | 167 | Citations (PDF) |
| 508 | The interface screening model as origin of imprint in PbZrxTi1−xO3 thin films. II. Numerical simulation and verification | 2.0 | 109 | Citations (PDF) |
| 509 | Integration of Piezoelectric PZT Thin Films with Internal Electrodes into an Actuator Structure for MEMS Applications | 0.6 | 10 | Citations (PDF) |
| 510 | Structural and morphologic evolution of Pt/Ba0.7Sr0.3TiO3/Pt capacitors with annealing processes | 3.0 | 14 | Citations (PDF) |
| 511 | Ultrathin epitaxial ferroelectric films grown on compressive substrates: Competition between the surface and strain effects | 2.0 | 141 | Citations (PDF) |
| 512 | Depolarizing-field-mediated 180° switching in ferroelectric thin films with 90° domains | 3.0 | 105 | Citations (PDF) |
| 513 | The interface screening model as origin of imprint in PbZrxTi1−xO3 thin films. I. Dopant, illumination, and bias dependence | 2.0 | 229 | Citations (PDF) |
| 514 | Interface-related decrease of the permittivity in PbZrxTi1−xO3 thin films | 3.0 | 27 | Citations (PDF) |
| 515 | Influence of the Film-Electrode Interface in Thin-Film Capacitors | 0.6 | 18 | Citations (PDF) |
| 516 | Interfacial and microstructural properties of SrTiO3 thin films grown on Si(001) substrates | 2.0 | 26 | Citations (PDF) |
| 517 | Kinetic of phase transformation of SrBi2Ta2O9 deposited by metalorganic decomposition on platinum electrodes | 3.0 | 6 | Citations (PDF) |
| 518 | Relaxors as High-ε-Materials for Multilayer and Thin Film Capacitors | 0.6 | 7 | Citations (PDF) |
| 519 | (Pb 1−x Ba x )TiO 3 Thin Films Prepared by Liquid Delivery MOCVD: Influence of the Process Parameters on Film Formation and Electrical Properties | 0.6 | 0 | Citations (PDF) |
| 520 | Influence of Defects on the Properties of a 2D Ferroelectric: A Monte-Carlo Simulation Study | 1.9 | 12 | Citations (PDF) |
| 521 | Compensation of the Parasitic Capacitance of a Scanning Force Microscope Cantilever Used for Measurements on Ferroelectric Capacitors of Submicron Size by Means of Finite Element Simulations | 1.9 | 17 | Citations (PDF) |
| 522 | On-Chip Integration of Pt/(Ba,Sr)TiO 3 /Pt Thin Film Capacitors | 0.6 | 0 | Citations (PDF) |
| 523 | Growth of (Ba,Sr)TiO 3 Thin Films by MOCVD: Stoichiometry Effects | 0.6 | 8 | Citations (PDF) |
| 524 | Influence of Excitation Frequency and Amplitude on the Switching Properties of SBT and PZT Thin Films at 10 MHZ Hysteresis Frequency | 0.6 | 4 | Citations (PDF) |
| 525 | Chemical Solution Deposition of Ferroelectric Thin Films - State of the Art and Recent Trends | 0.6 | 53 | Citations (PDF) |
| 526 | Origin of soft-mode stiffening and reduced dielectric response inSrTiO3thin films | 3.4 | 123 | Citations (PDF) |
| 527 | Simulation of the Charge Transport Across Grain Boundaries in p-Type SrTiO 3 Ceramics | 0.6 | 0 | Citations (PDF) |
| 528 | Imaging three-dimensional polarization in epitaxial polydomain ferroelectric thin films | 2.0 | 134 | Citations (PDF) |
| 529 | Lattice strain and lattice expansion of the SrRuO3 layers in SrRuO3/PbZr0.52Ti0.48O3/SrRuO3 multilayer thin films | 2.0 | 33 | Citations (PDF) |
| 530 | PZT thin films for piezoelectric microactuator applications | 4.5 | 104 | Citations (PDF) |
| 531 | Modelling and numerical simulation of the electrical, mechanical, and thermal coupled behaviour of Multilayer capacitors (MLCs) | 6.2 | 32 | Citations (PDF) |
| 532 | Title is missing! | 2.0 | 89 | Citations (PDF) |
| 533 | Title is missing! | 2.0 | 20 | Citations (PDF) |
| 534 | Simulation of the charge transport across grain boundaries in p-type SrTiO3 ceramics under dc load: Debye relaxation and dc bias dependence of long-term conductivity | 2.0 | 26 | Citations (PDF) |
| 535 | Etching Characteristics of Noble Metal Electrode | 0.1 | 0 | Citations (PDF) |
| 536 | Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope | 3.0 | 77 | Citations (PDF) |
| 537 | Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O3 thin films | 2.0 | 127 | Citations (PDF) |
| 538 | Influence of the measurement parameters on the reliability of ferroelectric thin films | 0.6 | 3 | Citations (PDF) |
| 539 | Advanced chemical deposition techniques - from research to production | 0.6 | 62 | Citations (PDF) |
| 540 | Digital reflection-type phase shifter based on a ferroelectric planar capacitor | 2.5 | 34 | Citations (PDF) |
| 541 | Structure property relations of BST thin films | 0.6 | 9 | Citations (PDF) |
| 542 | Thermodynamic theory of epitaxial ferroelectric thin films with dense domain structures | 3.4 | 254 | Citations (PDF) |
| 543 | Interfacial layers and their effect on leakage current in mocvd-deposited SBT thin films | 0.6 | 3 | Citations (PDF) |
| 544 | Far infrared and Raman spectroscopy of ferroelectric soft mode in SrTiO3 thin films and ceramics | 0.6 | 8 | Citations (PDF) |
| 545 | Relaxation effects and steady-state conduction in non-stoichiometric SBT films | 0.6 | 4 | Citations (PDF) |
| 546 | Segregation phenomena in thin films of BaTiO3 | 0.6 | 5 | Citations (PDF) |
| 547 | BST thin films grown in a multiwafer MOCVD reactor | 6.2 | 18 | Citations (PDF) |
| 548 | Morphology and electrical properties of SrTiO3-films on conductive oxide films | 6.2 | 16 | Citations (PDF) |
| 549 | Electrical conductivity and segregation effects of doped SrTiO3 thin films | 6.2 | 27 | Citations (PDF) |
| 550 | Advances in point defect chemistry: space charge controlled surface reactions | 6.2 | 13 | Citations (PDF) |
| 551 | Electrical characterization of grain boundary decorated SrTiO3 ceramics | 6.2 | 1 | Citations (PDF) |
| 552 | Development of oxygen-permeable ceramic membranes for NOx-sensors | 6.2 | 11 | Citations (PDF) |
| 553 | Polar grain boundaries in undoped SrTiO3 ceramics | 6.2 | 16 | Citations (PDF) |
| 554 | Dielectric Properties of Ba(Zr,Ti)O3-Based Ferroelectrics for Capacitor Applications | 3.7 | 199 | Citations (PDF) |
| 555 | Electrical measurements on capacitor sizes in the submicron regime for the characterization of real memory cell capacitors | 0.6 | 4 | Citations (PDF) |
| 556 | Basic investigations on a piezoelectric bending actuator for micro-electro-mechanical applications | 0.6 | 14 | Citations (PDF) |
| 557 | Optimization of Pt/SBT/CeO2/Si(100) gate stacks for low voltage ferroelectric field effect devices | 0.6 | 1 | Citations (PDF) |
| 558 | Relaxation mechanisms in ferroelectric thin film capacitors for feram application | 0.6 | 4 | Citations (PDF) |
| 559 | High temperature conductivity behavior of doped SrTiO3 thin films | 0.6 | 10 | Citations (PDF) |
| 560 | Domain switching, rotation processes and dielectric response of polycrystalline Pb(ZrxTi1-x)O3thin films | 2.9 | 3 | Citations (PDF) |
| 561 | Chemical deposition methods for ferroelectric thin films | 0.6 | 7 | Citations (PDF) |
| 562 | Thickness dependent morphology and electrical characteristics of SrBi2Ta2O9 deposited by metal organic decomposition | 0.6 | 1 | Citations (PDF) |
| 563 | Finite element simulations of interdigital electrode structures on high permittivity thin films | 0.6 | 4 | Citations (PDF) |
| 564 | Status and future aspects in nanoscale surface inspection of ferroics by scanning probe microscopy | 0.6 | 12 | Citations (PDF) |
| 565 | Dielectric, infrared, and Raman response of undopedSrTiO3ceramics: Evidence of polar grain boundaries | 3.4 | 269 | Citations (PDF) |
| 566 | In-plane polarization states and their instabilities in polydomain epitaxial ferroelectric thin films | 3.0 | 25 | Citations (PDF) |
| 567 | Frequency Dependence of the Coercive Voltage of Ferroelectric Thin Films | 0.1 | 6 | Citations (PDF) |
| 568 | Temperature Dependence of the Reversible and Irreversible Polarization Contributions in Ferroelectric Thin Films | 0.1 | 4 | Citations (PDF) |
| 569 | Gate Stacks for Low Voltage Ferroelectric Field Effect Devices Based on Pt/SBT/CeO2/Si(100) | 0.1 | 0 | Citations (PDF) |
| 570 | MOCVD of perovskite thin films using an aerosol-assisted liquid delivery system | 1.7 | 15 | Citations (PDF) |
| 571 | Study of electrical and mechanical contribution to switching in ferroelectric/ferroelastic polycrystals | 8.7 | 49 | Citations (PDF) |
| 572 | Electroceramic materials | 8.7 | 393 | Citations (PDF) |
| 573 | Grain boundaries in dielectric and mixed-conducting ceramics | 8.7 | 270 | Citations (PDF) |
| 574 | Deposition of thin BST films in a multi-wafer planetary reactor | 0.6 | 19 | Citations (PDF) |
| 575 | Degradation mechanisms of SrBi2Ta2O9 ferroelectric thin film capacitors during forming gas annealing | 0.6 | 7 | Citations (PDF) |
| 576 | Reversible and irreversible processes in donor-doped Pb(Zr,Ti)O3 | 3.0 | 70 | Citations (PDF) |
| 577 | Lifetime estimation due to imprint failure in ferroelectric SrBi2Ta2O9 thin films | 3.0 | 42 | Citations (PDF) |
| 578 | Curie–Weiss-type law for the strain and stress effects on the dielectric response of ferroelectric thin films | 3.0 | 40 | Citations (PDF) |
| 579 | Low temperature process and thin SBT films for ferroelectric memory devices | 0.6 | 12 | Citations (PDF) |
| 580 | Formation of micro-crystals on the (100) surface of SrTiO3 at elevated temperatures | 1.7 | 135 | Citations (PDF) |
| 581 | Differentiating 180° and 90° switching of ferroelectric domains with three-dimensional piezoresponse force microscopy | 3.0 | 161 | Citations (PDF) |
| 582 | Capacitance and admittance spectroscopy analysis of hydrogen-degraded Pt/(Ba, Sr)TiO3/Pt thin-film capacitors | 3.0 | 39 | Citations (PDF) |
| 583 | Correlation between switching and fatigue in PbZr[sub 0.3]Ti[sub 0.7]O[sub 3] thin films | 3.0 | 51 | Citations (PDF) |
| 584 | Laserannealing studies of barium strontium titanate thin films using short laser pulses | 0.6 | 7 | Citations (PDF) |
| 585 | Preparation of (PbxBa1-x)TiO3 thin films by MOCVD using an aerosol-assisted liquid delivery system | 0.6 | 2 | Citations (PDF) |
| 586 | Finite‐Element Analysis of Ceramic Multilayer Capacitors: Modeling and Electrical Impedance Spectroscopy for a Nondestructive Failure Test | 3.7 | 18 | Citations (PDF) |
| 587 | Finite‐Element Analysis of Ceramic Multilayer Capacitors: Failure Probability Caused by Wave Soldering and Bending Loads | 3.7 | 47 | Citations (PDF) |
| 588 | Recrystallization of Oxygen Ion Implanted Ba
0.7
Sr
0.3
TiO
3
Thin Films | 3.7 | 16 | Citations (PDF) |
| 589 | Influence of dry etching using argon on structural and electrical properties of crystalline and non-crystalline SrBi2Ta2O9 thin films | 0.6 | 8 | Citations (PDF) |
| 590 | Smart materials and structures | 7.5 | 69 | Citations (PDF) |
| 591 | Microstructure and properties of highly oriented PZT thin films on epitaxial ceramic electrodes prepared by CSD | 0.6 | 1 | Citations (PDF) |
| 592 | Reversible and irreversible domainwall contributions to the polarization in CSD prepared Ba1−xPbx(Ti,Mn)O3thin films | 0.6 | 1 | Citations (PDF) |
| 593 | Influence of crystallization kinetics on texture of sol–gel PZT and BST thin films | 6.2 | 16 | Citations (PDF) |
| 594 | A novel integrated thin film capacitor realized by a multilayer ceramic–electrode sandwich structure | 6.2 | 24 | Citations (PDF) |
| 595 | Modeling of electroceramics—Applications and prospects | 6.2 | 36 | Citations (PDF) |
| 596 | Detailed temperature dependence of the space charge layer width at grain boundaries in acceptor-doped SrTiO3-ceramics | 6.2 | 12 | Citations (PDF) |
| 597 | Control of the morphology of CSD-prepared (Ba,Sr)TiO3 thin films | 6.2 | 175 | Citations (PDF) |
| 598 | Title is missing! | 2.0 | 25 | Citations (PDF) |
| 599 | Ferroelectric thin films grown on tensile substrates: Renormalization of the Curie–Weiss law and apparent absence of ferroelectricity | 2.0 | 146 | Citations (PDF) |
| 600 | Functional graded high-K (Ba1−xSrx)TiO3 thin films for capacitor structures with low temperature coefficient | 0.6 | 30 | Citations (PDF) |
| 601 | Reversible and irreversible domain wall contributions to the polarization in ferroelectric thin films | 0.6 | 58 | Citations (PDF) |
| 602 | 3-Dimensional FEM simulations of resonances in the impedance characteristic of ceramic multilayer capacitors | 0.6 | 2 | Citations (PDF) |
| 603 | Influence of the thickness and area of NiCr/Ag electrodes on the characteristics of BaTiO3- ceramic based positive-temperature-coefficient thermistors | 3.4 | 21 | Citations (PDF) |
| 604 | Title is missing! | 2.7 | 123 | Citations (PDF) |
| 605 | Transverse magnetovoltage in epitaxial La0.67Ca0.33MnO3 thin films | 2.3 | 10 | Citations (PDF) |
| 606 | The effect of Zr on the microstructure of Ba(Ti1−yZry)O3 thin films prepared by chemical-solution deposition | 2.5 | 6 | Citations (PDF) |
| 607 | Electrical characterization of ferroelectric, paraelectric, and superparaelectric thin films | 0.6 | 24 | Citations (PDF) |
| 608 | Properties of SrBi2Ta2O9 thin films grown by MOCVD for high density FeRAM applications | 0.6 | 18 | Citations (PDF) |
| 609 | Externally determined and intrinsic contributions to the polarization switching currents in SrBi2Ta2O9 thin films | 0.6 | 11 | Citations (PDF) |
| 610 | Imprint in ferroelectric SrBi2Ta2O9 capacitors for non-volatile memory applications | 0.6 | 12 | Citations (PDF) |
| 611 | Aggregate linear properties of ferroelectric ceramics and polycrystalline thin films: Calculation by the method of effective piezoelectric medium | 2.0 | 43 | Citations (PDF) |
| 612 | Influence of temperature and interface charge on the grain-boundary conductivity in acceptor-doped SrTiO3 ceramics | 2.0 | 87 | Citations (PDF) |
| 613 | Resistance degradation behavior of Ba0.7Sr0.3TiO3 thin films compared to mechanisms found in titanate ceramics and single crystals | 0.6 | 25 | Citations (PDF) |
| 614 | Dielectric relaxation phenomena in superparaelectric and ferroelectric ceramic thin films and the relevance with respect to high density DRAM and FRAM applications | 0.3 | 2 | Citations (PDF) |
| 615 | Curie-Weiss law of (Ba1-xSrx)TiO3 thin films prepared by chemical solution deposition | 0.3 | 6 | Citations (PDF) |
| 616 | The structure and formation of nanotwins in BaTiO3 thin films | 0.8 | 4 | Citations (PDF) |
| 617 | Granularity effects on the magnetic and electrical properties of La(Ca,Sr)MnO3 thin films | 0.3 | 0 | Citations (PDF) |
| 618 | Simulation of Electrical Properties of Grain Boundaries in Titanate Ceramics | 0.0 | 11 | Citations (PDF) |
| 619 | Hot-forging of Ba6-3xRE8+2xTi18O54ceramics (RE=La, Ce, Nd, Sm) | 0.6 | 27 | Citations (PDF) |
| 620 | Nonlinear Charge Transport in Acceptor‐Doped Titanates | 0.0 | 0 | Citations (PDF) |
| 621 | An Important Failure Mechanism in MOCVD (Ba,Sr)TiO3 thin Films: Resistance Degradation | 0.1 | 7 | Citations (PDF) |
| 622 | Chemical Solution Deposited BaTi03 AND SrTi03 Thin Films With Columnar Microstructure | 0.1 | 47 | Citations (PDF) |
| 623 | Reversible and Irreversible Contributions to the Polarization in SrBi 2 Ta 2 O 9 Ferroelectric Capacitors | 0.1 | 15 | Citations (PDF) |
| 624 | Pulsed laser ablation synthesis and characterization of layered SrBi2Ta2O9 films and integration into capacitors for non-volatile memories | 0.6 | 11 | Citations (PDF) |
| 625 | Dielectric analysis of intergrated ceramic thin film capacitors | 0.6 | 105 | Citations (PDF) |
| 626 | The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition | 2.0 | 370 | Citations (PDF) |
| 627 | Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories | 2.0 | 331 | Citations (PDF) |
| 628 | Title is missing! | 2.0 | 46 | Citations (PDF) |
| 629 | Charge injection in SrTiO3 thin films | 1.9 | 80 | Citations (PDF) |
| 630 | Dopant influence on dielectric losses, leakage behaviour, and resistance degradation of SrTiO3 thin films | 1.9 | 88 | Citations (PDF) |
| 631 | Grain‐Boundary Defect Chemistry of Acceptor‐Doped Titanates: Inversion Layer and Low‐Field Conduction | 3.7 | 125 | Citations (PDF) |
| 632 | Nature of the surface layer in ABO3-type perovskites at elevated temperatures | 2.5 | 30 | Citations (PDF) |
| 633 | Numerical simulation of the defect chemistry and electrostatics at grain boundaries in titanate ceramics | 4.2 | 33 | Citations (PDF) |
| 634 | Electrical characterization of semiconducting La doped SrTiO 3 thin films prepared by pulsed laser deposition | 6.6 | 2 | Citations (PDF) |
| 635 | Surface layer on KNbO 3 and the hysteresis loop anomaly | 4.7 | 22 | Citations (PDF) |
| 636 | Grain-boundary decorated titanate ceramics: Preparation and processing | 3.1 | 17 | Citations (PDF) |
| 637 | Electronic properties of grain boundaries in SrTiO3 and BaTiO3 ceramics | 3.1 | 103 | Citations (PDF) |
| 638 | Investigation of grain boundary segregation in acceptor and donor doped strontium titanate | 3.1 | 36 | Citations (PDF) |
| 639 | Structural and electrical properties of wet-chemically deposited Sr(Ti1-yZry)O3 (y=0…1) thin films | 0.6 | 22 | Citations (PDF) |
| 640 | Electrode influence on the charge transport through SrTiO3thin films | 2.0 | 239 | Citations (PDF) |
| 641 | Dielectric relaxation of perovskite—type oxide thin films | 0.6 | 38 | Citations (PDF) |
| 642 | How to analyse relaxation and leakage currents of dielectric thin films: Simulation of voltage-step and voltage-ramp techniques | 0.6 | 22 | Citations (PDF) |
| 643 | Optical absorption relaxation applied to SrTiO3 and ZrO2: An in-situ method to study trapping effects on chemical diffusion | 3.1 | 23 | Citations (PDF) |
| 644 | Grain Boundary Defect Chemistry of Acceptor-Doped Titanates: Space Charge Layer Width | 3.7 | 258 | Citations (PDF) |
| 645 | Charge transport in perovskite-type titanates: Space charge effects in ceramics and films | 0.6 | 10 | Citations (PDF) |
| 646 | An Optical In‐Situ Method to Study Redox‐Kinetics in SrTiO3 | 0.0 | 38 | Citations (PDF) |
| 647 | Processing and electrical properties of Pb (ZrxTi1−x)O3(x=0.2–0.75) films: Comparison of metallo‐organic decomposition and sol‐gel processes | 2.0 | 209 | Citations (PDF) |
| 648 | KONRAD GEORG WEIL zum 65. Geburtstag | 0.0 | 1 | Citations (PDF) |
| 649 | TrI4: The role of grain boundaries in conduction and breakdown of perovskite-type titanates | 0.6 | 104 | Citations (PDF) |
| 650 | Optical investigation of oxygen incorporation in SrTiO3 | 3.1 | 69 | Citations (PDF) |
| 651 | Kinetics of oxygen incorporation in SrTiO3 (Fe-doped): an optical investigation | 7.6 | 67 | Citations (PDF) |
| 652 | Bulk Conductivity and Defect Chemistry of Acceptor-Doped Strontium Titanate in the Quenched State | 3.7 | 428 | Citations (PDF) |
| 653 | Advanced dielectrics: Bulk ceramics and thin films | 24.5 | 159 | Citations (PDF) |
| 654 | dc Electrical Degradation of Perovskite-Type Titanates: I, Ceramics | 3.7 | 663 | Citations (PDF) |
| 655 | dc Electrical Degradation of Perovskite-Type Titanates: II, Single Crystals | 3.7 | 329 | Citations (PDF) |
| 656 | dc Electrical Degradation of Perovskite-Type Titanates: III, A Model of the Mechanism | 3.7 | 428 | Citations (PDF) |
| 657 | Determination of acceptor concentrations and energy levels in oxides using an optoelectrochemical technique | 2.3 | 61 | Citations (PDF) |
| 658 | dc Field-induced resistance degradation of perovskite-type titanates: A non-linear transport phenomenon | 0.6 | 8 | Citations (PDF) |
| 659 | High resolution IR absorption spectroscopy of the OH stretch modes in SrTiO 3:Fe | 0.6 | 5 | Citations (PDF) |
| 660 | Degradation of dielectric ceramics | 6.3 | 46 | Citations (PDF) |
| 661 | Solubility of Hydrogen Defects in Doped and Undoped BaTiO3 | 3.7 | 99 | Citations (PDF) |
| 662 | Time Evolution of the Potential Distribution in Earth Alkaline Titanates under de Voltage Stress | 0.0 | 25 | Citations (PDF) |
| 663 | Diffusion of Hydrogen Defects in BaTiO3 Ceramics and SrTiO3 Single Crystals | 0.0 | 63 | Citations (PDF) |
| 664 | Impedance Spectroscopic Studies of the System “Silver/Aqueous Chloride Solution” | 2.7 | 3 | Citations (PDF) |
| 665 | Potential Dependence and Time Evolution of the Double Layer Structure and Topography of Silver Electrodes. Part I: Smooth Silver Films | 0.0 | 7 | Citations (PDF) |
| 666 | Potential Dependence and Time Evolution of the Double Layer Structure and Topography of Silver Electrodes Part II: Roughened Silver Films | 0.0 | 5 | Citations (PDF) |
| 667 | Migration of complexes at the silver/electrolyte interface | 0.0 | 20 | Citations (PDF) |
| 668 | An electrochemical study of the adsorption of pyridine and chloride ions on smooth and roughened silver surfaces | 0.0 | 57 | Citations (PDF) |
| 669 | Eightwise Switching Mechanism in Memristive SrTiO3 Devices and Its Implications on the Device Performance | 1.5 | 8 | Citations (PDF) |
