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188 PR articles • 3,900 PR citations • Sorted by year • Download PDF (PDF by citations)
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1Enhancing Repetitive Uniaxial Mechanical Bending Endurance at ${R} = 2$ mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors
IEEE Electron Device Letters, 2019, 40, 913-916
3.314Citations (PDF)
2Study of ionically conducting nanocomposites for reflective electrochromic devices
Electrochimica Acta, 2019, 301, 174-182
5.312Citations (PDF)
3Cascaded systems analysis of a-Se/a-Si and a-InGaZnO TFT passive and active pixel sensors for tomosynthesis
Physics in Medicine and Biology, 2019, 64, 025012
3.19Citations (PDF)
4Novel Top-Anode OLED/a-IGZO TFTs Pixel Circuit for 8K4K AM-OLEDs
IEEE Transactions on Electron Devices, 2019, 66, 436-444
2.722Citations (PDF)
5Photoluminescence Study of Amorphous InGaZnO Thin-Film Transistors
IEEE Transactions on Electron Devices, 2018, 65, 1258-1261
2.76Citations (PDF)
6High-performance PBT7-Th:PC70BM polymer photodiode with transferred charge blocking layers
Organic Electronics, 2018, 62, 566-571
2.66Citations (PDF)
7Physical origin of the non-linearity in amorphous In-Ga-Zn-O thin-film transistor current-voltage characteristics
Solid-State Electronics, 2018, 147, 51-57
1.13Citations (PDF)
8Study of current-mode active pixel sensor circuits using amorphous InSnZnO thin-film transistor for 50-μm pixel-pitch indirect X-ray imagers
Solid-State Electronics, 2017, 131, 53-64
1.113Citations (PDF)
9Task-Based Modeling of a 5k Ultra-High-Resolution Medical Imaging System for Digital Breast Tomosynthesis
IEEE Transactions on Medical Imaging, 2017, 36, 1820-1831
7.75Citations (PDF)
10Bilayer Interdiffused Heterojunction Organic Photodiodes Fabricated by Double Transfer Stamping
Advanced Optical Materials, 2017, 5,
7.021Citations (PDF)
113D Printed Masks and Transfer Stamping Process to Enable the Fabrication of the Hemispherical Organic Photodiodes
Advanced Materials Technologies, 2017, 2,
5.98Citations (PDF)
12DNA-DODA-based polymer electrolytes for dye sensitized solar cells
Molecular Crystals and Liquid Crystals, 2017, 655, 131-141
1.20Citations (PDF)
13Amorphous InSnZnO Thin-Film Transistor Voltage-Mode Active Pixel Sensor Circuits for Indirect X-Ray Imagers
IEEE Transactions on Electron Devices, 2016, 63, 4802-4810
2.719Citations (PDF)
14Half-Corbino short-channel amorphous In–Ga–Zn–O thin-film transistors with a-SiOx or a-SiOx/a-SiNx passivation layers
Solid-State Electronics, 2016, 120, 25-31
1.116Citations (PDF)
15Influence of DNA and DNA-PEDOT: PSS on dye sensitized solar cell performance
Molecular Crystals and Liquid Crystals, 2016, 627, 38-48
1.211Citations (PDF)
16DC sputtered amorphous In–Sn–Zn–O thin-film transistors: Electrical properties and stability
Solid-State Electronics, 2016, 116, 22-29
1.155Citations (PDF)
17Large area CMOS active pixel sensor x‐ray imager for digital breast tomosynthesis: Analysis, modeling, and characterization
Medical Physics, 2015, 42, 6294-6308
3.244Citations (PDF)
18Density of states of short channel amorphous In–Ga–Zn–O thin-film transistor arrays fabricated using manufacturable processes
Japanese Journal of Applied Physics, 2015, 54, 051101
1.910Citations (PDF)
19Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy
Semiconductor Science and Technology, 2015, 30, 055008
2.23Citations (PDF)
20Dynamic Response of a-InGaZnO and Amorphous Silicon Thin-Film Transistors for Ultra-High Definition Active-Matrix Liquid Crystal Displays
Journal of Display Technology, 2015, 11, 471-479
1.124Citations (PDF)
21Top illuminated organic photodetectors with dielectric/metal/dielectric transparent anode
Organic Electronics, 2015, 20, 103-111
2.634Citations (PDF)
22Short channel amorphous In–Ga–Zn–O thin-film transistor arrays for ultra-high definition active matrix liquid crystal displays: Electrical properties and stability
Solid-State Electronics, 2015, 111, 67-75
1.125Citations (PDF)
23Electrochromic device with Prussian blue and HPC-based electrolyte
Electrochimica Acta, 2015, 182, 878-883
5.322Citations (PDF)
2450<i>μ</i>m pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis
Physics in Medicine and Biology, 2015, 60, 8977-9001
3.129Citations (PDF)
25Impedance Analysis of Gellan Gum - Poly(vinyl pyrrolidone) Membranes
Molecular Crystals and Liquid Crystals, 2014, 604, 84-95
1.212Citations (PDF)
26Oxygen flow effects on electrical properties, stability, and density of states of amorphous In–Ga–Zn–O thin-film transistors
Japanese Journal of Applied Physics, 2014, 53, 121101
1.937Citations (PDF)
27Properties of Electrodeposited WO<sub>3</sub>Thin Films
Molecular Crystals and Liquid Crystals, 2014, 604, 71-83
1.227Citations (PDF)
28Electrical Instability of Double-Gate a-IGZO TFTs With Metal Source/Drain Recessed Electrodes
IEEE Transactions on Electron Devices, 2014, 61, 1109-1115
2.727Citations (PDF)
29AC Bias-Temperature Stability of a-InGaZnO Thin-Film Transistors With Metal Source/Drain Recessed Electrodes
IEEE Transactions on Electron Devices, 2014, 61, 806-812
2.711Citations (PDF)
30Density of states of amorphous In-Ga-Zn-O from electrical and optical characterization
Journal of Applied Physics, 2014, 116,
2.175Citations (PDF)
31P‐25: Top Gate Amorphous In–Ga–Zn–O Thin Film Transistors Fabricated on Soda–Lime–Silica Glass Substrates
Digest of Technical Papers SID International Symposium, 2014, 45, 1035-1038
0.53Citations (PDF)
32An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs
Journal of Display Technology, 2014, 10, 402-406
1.129Citations (PDF)
33Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs
IEEE Electron Device Letters, 2014, 35, 75-77
3.320Citations (PDF)
34Amorphous In–Ga–Zn–O thin‐film transistor active pixel sensor x‐ray imager for digital breast tomosynthesis
Medical Physics, 2014, 41,
3.256Citations (PDF)
35High Efficiency Cu(In,Ga)Se<sub>2</sub> Flexible Solar Cells Fabricated by Roll-to-Roll Metallic Precursor Co-sputtering Method
Japanese Journal of Applied Physics, 2013, 52, 092302
1.915Citations (PDF)
3616.3: AC and DC Bias‐Temperature Stability of Coplanar Homojunction a‐InGaZnO Thin‐Film Transistors
Digest of Technical Papers SID International Symposium, 2013, 44, 174-177
0.53Citations (PDF)
37Ab initio electronic structure calculations of solid, solution-processed metallotetrabenzoporphyrins
Journal of Applied Physics, 2012, 111, 073709
2.14Citations (PDF)
38P‐14: a‐IGZO TFT Based Pixel Circuits for AM‐OLED Displays
Digest of Technical Papers SID International Symposium, 2012, 43, 1097-1100
0.55Citations (PDF)
39Solution-processed zinc tetrabenzoporphyrin thin-films and transistors
Thin Solid Films, 2012, 520, 4031-4035
1.919Citations (PDF)
40Amorphous In–Ga–Zn–O Dual-Gate TFTs: Current–Voltage Characteristics and Electrical Stress Instabilities
IEEE Transactions on Electron Devices, 2012, 59, 1928-1935
2.766Citations (PDF)
41Chemical and Mechanical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD Systems
Materials Research Society Symposia Proceedings, 2011, 68,
0.12Citations (PDF)
42Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems
Materials Research Society Symposia Proceedings, 2011, 68,
0.11Citations (PDF)
43Ohmic and Quasi-Ohmic Contacts to Hydrogenated Amorphous Silicon Thin Films
Materials Research Society Symposia Proceedings, 2011, 70,
0.12Citations (PDF)
44Metal / Hydrogenated Amorphous Silicon Interfaces
Materials Research Society Symposia Proceedings, 2011, 95,
0.12Citations (PDF)
45Temperature Dependent Characteristics of Hydrogenated Amorphous Silicon thin film Transistors
Materials Research Society Symposia Proceedings, 2011, 118,
0.16Citations (PDF)
46Role of Hydrogen in Silicon Nitride Films Prepared by Various Deposition Techniques
Materials Research Society Symposia Proceedings, 2011, 118,
0.15Citations (PDF)
47Properties of High Conductivity Phosphorous Doped Hydrogenated Microcrystalline Silicon and Application in Thin Film Transistor Technology
Materials Research Society Symposia Proceedings, 2011, 149,
0.17Citations (PDF)
48Properties and Application of Undoped Hydrogenated Microcrystalline Silicon Thin Films
Materials Research Society Symposia Proceedings, 2011, 149,
0.11Citations (PDF)
49Investigation of the Silicon Nitride on Hydrogenated Amorphous Silicon Interface
Materials Research Society Symposia Proceedings, 2011, 149,
0.10Citations (PDF)
50Correlations Between Optical, Electrical, and Structural Properties of In-Situ Phosphorus-Doped Hydrogenated Microcrystalline Silicon - Effects of Rapid Thermal Annealing on Material Properties
Materials Research Society Symposia Proceedings, 2011, 164,
0.11Citations (PDF)
51Paramagnetic Nitrogen Defects in Silicon Nitride
Materials Research Society Symposia Proceedings, 2011, 284,
0.10Citations (PDF)
52The Effect of UV Light on IR Absorption in Chemically Vapor Deposited a-SiNx:H Films
Materials Research Society Symposia Proceedings, 2011, 284,
0.10Citations (PDF)
53Performance of Polycrystalline Silicon Thin Film Transistors with Double Layer Gate Dielectric
Materials Research Society Symposia Proceedings, 2011, 284,
0.10Citations (PDF)
54Photobleaching of PL and Temperature Dependence of ESR in Nitrogen-Rich Amorphous Silicon Nitride Films
Materials Research Society Symposia Proceedings, 2011, 336,
0.11Citations (PDF)
55Low Temperature Deposition of Polycrystalline Silicon thin Films by Hot-Wire CVD
Materials Research Society Symposia Proceedings, 2011, 377,
0.11Citations (PDF)
56Atomic Hydrogen Effects on the Optical and Electrical Properties of Transparent Conducting Oxides For a-Si:H TFT-LCDs
Materials Research Society Symposia Proceedings, 2011, 424,
0.13Citations (PDF)
57High-Rate Deposited Amorphous Silicon Nitride for the Hydrogenated Amorphous Silicon Thin-Film Transistor Structures
Materials Research Society Symposia Proceedings, 2011, 424,
0.10Citations (PDF)
58Poly(bithiazole)s: A New Class of Conjugated Polymers for Polymer-Based Light-Emitting Diodes
Materials Research Society Symposia Proceedings, 2011, 424,
0.11Citations (PDF)
59Influence Of The Density of States and Series Resistance on the Field-Effect Activation Energy in a-Si:H TFT
Materials Research Society Symposia Proceedings, 2011, 424,
0.13Citations (PDF)
60Effects of Ultraviolet-Light on Polyimide Films for Liquid Crystal Alignment
Materials Research Society Symposia Proceedings, 2011, 508,
0.10Citations (PDF)
61A High-Voltage Hydrogenated Amorphous Silicon Thin-Film Transistor for Reflective Active-Matrix Cholesteric LCD
Materials Research Society Symposia Proceedings, 2011, 558,
0.11Citations (PDF)
62P‐11: Electrical Properties and Stability of Dual‐Gate Coplanar Homojunction Amorphous Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistor
Digest of Technical Papers SID International Symposium, 2011, 42, 1136-1139
0.57Citations (PDF)
63Electrical Instability of the a-Si:H TFTs Fabricated by Maskless Laser-Write Lithography on a Spherical Surface
IEEE Transactions on Electron Devices, 2011, 58, 160-164
2.75Citations (PDF)
64Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors and Its Application to AM-OLEDs
IEEE Transactions on Electron Devices, 2011, 58, 4344-4353
2.788Citations (PDF)
65Back channel etch chemistry of advanced a-Si:H TFTs
Microelectronic Engineering, 2011, 88, 207-212
2.85Citations (PDF)
66Analyte selective response in solution-deposited tetrabenzoporphyrin thin-film field-effect transistor sensors
Sensors and Actuators B: Chemical, 2011, 158, 333-339
7.723Citations (PDF)
67Electrical Stability of Power Efficient Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistors
Japanese Journal of Applied Physics, 2011, 50, 120203
1.91Citations (PDF)
68Crystalline In–Ga–Zn–O Density of States and Energy Band Structure Calculation Using Density Function Theory
Japanese Journal of Applied Physics, 2011, 50, 091102
1.921Citations (PDF)
69Asymmetric Electrical Properties of Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistor and Its Applications to Flat Panel Displays
Japanese Journal of Applied Physics, 2011, 50, 074203
1.96Citations (PDF)
70Asymmetric Electrical Properties of Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistor and Its Applications to Flat Panel Displays
Japanese Journal of Applied Physics, 2011, 50, 074203
1.97Citations (PDF)
71Crystalline In–Ga–Zn–O Density of States and Energy Band Structure Calculation Using Density Function Theory
Japanese Journal of Applied Physics, 2011, 50, 091102
1.927Citations (PDF)
72Electrical Stability of Power Efficient Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistors
Japanese Journal of Applied Physics, 2011, 50, 120203
1.92Citations (PDF)
73Hemispherical thin-film transistor passive pixel sensors
Sensors and Actuators A: Physical, 2010, 158, 280-283
4.510Citations (PDF)
74A maskless laser-write lithography processing of thin-film transistors on a hemispherical surface
Microelectronic Engineering, 2010, 87, 83-87
2.823Citations (PDF)
75Low frequency noise in long channel amorphous In–Ga–Zn–O thin film transistors
Journal of Applied Physics, 2010, 108,
2.188Citations (PDF)
76Electrical Stability of Hexagonal a-Si:H TFTs
IEEE Electron Device Letters, 2010, 31, 53-55
3.35Citations (PDF)
77Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors
Journal of Applied Physics, 2009, 106,
2.1248Citations (PDF)
78Asymmetric electrical properties of fork a-Si:H thin-film transistor and its application to flat panel displays
Journal of Applied Physics, 2009, 105,
2.121Citations (PDF)
79Amorphous In–Ga–Zn–O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays
Japanese Journal of Applied Physics, 2009, 48, 03B025
1.927Citations (PDF)
80Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies
IEEE Transactions on Electron Devices, 2009, 56, 1177-1183
2.7176Citations (PDF)
81Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors
Journal of Display Technology, 2009, 5, 452-461
1.1105Citations (PDF)
82P-11: DC/AC Electrical Instability of R.F. Sputter Amorphous In-Ga-Zn-O TFTs
Digest of Technical Papers SID International Symposium, 2009, 40, 1117
0.516Citations (PDF)
83P‐14: AM‐OLED Pixel Circuits Based on a‐InGaZnOThin Film Transistors
Digest of Technical Papers SID International Symposium, 2009, 40, 1128-1131
0.519Citations (PDF)
84Hexagonal a-Si:H TFTs: A New Advanced Technology for Flat-Panel Displays
IEEE Transactions on Electron Devices, 2008, 55, 329-336
2.714Citations (PDF)
85Advanced Amorphous Silicon Thin-Film Transistors for AM-OLEDs: Electrical Performance and Stability
IEEE Transactions on Electron Devices, 2008, 55, 1621-1629
2.723Citations (PDF)
86Dynamic Response of Normal and Corbino a-Si:H TFTs for AM-OLEDs
IEEE Transactions on Electron Devices, 2008, 55, 2338-2347
2.716Citations (PDF)
87Photofield‐effect in amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors
Journal of Information Display, 2008, 9, 21-29
3.0103Citations (PDF)
88Advanced Multilayer Amorphous Silicon Thin-Film Transistor Structure: Film Thickness Effect on Its Electrical Performance and Contact Resistance
Japanese Journal of Applied Physics, 2008, 47, 3362-3367
1.913Citations (PDF)
89P‐13: Photosensitivity of Amorphous IGZO TFTs for Active‐Matrix Flat‐Panel Displays
Digest of Technical Papers SID International Symposium, 2008, 39, 1215-1218
0.560Citations (PDF)
90Novel Current-Scaling Current-Mirror Hydrogenated Amorphous Silicon Thin-Film Transistor Pixel Electrode Circuit with Cascade Capacitor for Active-Matrix Organic Light-Emitting Devices
Japanese Journal of Applied Physics, 2007, 46, 1343-1349
1.913Citations (PDF)
91Polycrystalline tetrabenzoporphyrin organic field-effect transistors with nanostructured channels
Applied Physics Letters, 2007, 90, 233107
3.039Citations (PDF)
92Solution-processed polycrystalline copper tetrabenzoporphyrin thin-film transistors
Synthetic Metals, 2007, 157, 190-197
4.557Citations (PDF)
93Asymmetric Electrical Properties of Corbino a-Si:H TFT and Concepts of Its Application to Flat Panel Displays
IEEE Transactions on Electron Devices, 2007, 54, 654-662
2.729Citations (PDF)
94Current-Scaling a-Si:H TFT Pixel-Electrode Circuit for AM-OLEDs: Electrical Properties and Stability
IEEE Transactions on Electron Devices, 2007, 54, 2403-2410
2.723Citations (PDF)
9570.3: Current-Scaling a-Si:H TFT Pixel Electrode Circuit for AM-OLEDs
Digest of Technical Papers SID International Symposium, 2006, 37, 1968
0.50Citations (PDF)
96Solution-processed nickel tetrabenzoporphyrin thin-film transistors
Journal of Applied Physics, 2006, 100, 034502
2.169Citations (PDF)
97P-143: A Novel Current-Scaling a-Si:H TFTs Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays
Digest of Technical Papers SID International Symposium, 2005, 36, 846
0.53Citations (PDF)
98Field-effect mobility of polycrystalline tetrabenzoporphyrin thin-film transistors
Journal of Applied Physics, 2005, 98, 014503
2.191Citations (PDF)
99Methanofullerene-coated tetrabenzoporphyrin organic field-effect transistors
Applied Physics Letters, 2005, 87, 173506
3.014Citations (PDF)
100Poly(fluorene-oxadiazole) copolymer-based light-emitting devices on a plastic substrate
Synthetic Metals, 2005, 155, 1-10
4.512Citations (PDF)
101Transparent flexible plastic substrates for organic light-emitting devices
Journal of Electronic Materials, 2004, 33, 312-320
2.338Citations (PDF)
102Field-Effect Mobility of Organic Polymer Thin-Film Transistors
Chemistry of Materials, 2004, 16, 4699-4704
6.750Citations (PDF)
103Structural ordering and enhanced carrier mobility in organic polymer thin film transistors
Synthetic Metals, 2004, 146, 181-185
4.5109Citations (PDF)
104Angular dependence of the luminance and contrast in medical monochrome liquid crystal displays
Medical Physics, 2003, 30, 2602-2613
3.241Citations (PDF)
105Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display
Applied Physics Letters, 2003, 83, 3233-3235
3.012Citations (PDF)
106Contact Resistance in Schottky Contact Gated-Four-Probe a-Si Thin-Film Transistor
Japanese Journal of Applied Physics, 2003, 42, L907-L909
1.99Citations (PDF)
10725.1: Luminance Probes for Contrast Measurements in Medical Displays
Digest of Technical Papers SID International Symposium, 2003, 34, 928
0.55Citations (PDF)
1084.5: 200 dpi 4-a-Si:H TFTs Current-Driven AM-PLEDs
Digest of Technical Papers SID International Symposium, 2003, 34, 22
0.50Citations (PDF)
1094.4: 200 dpi 3-a-Si:H TFTs Voltage-Driven AM-PLEDs
Digest of Technical Papers SID International Symposium, 2003, 34, 18
0.55Citations (PDF)
110Source / drain contacts in organic polymer thin film transistors
Materials Research Society Symposia Proceedings, 2003, 771,
0.11Citations (PDF)
111Effect of Illumination on Organic Polymer Thin-Film Transistors
Materials Research Society Symposia Proceedings, 2003, 771,
0.14Citations (PDF)
112High-resolution organic polymer light-emitting pixels fabricated by imprinting technique
Journal of Vacuum Science & Technology an Official Journal of the American Vacuum Society B, Microelectronics Processing and Phenomena, 2002, 20, 2877
1.556Citations (PDF)
113P-102: Amorphous Silicon Thin-Film Transistors-based Active-Matrix Organic Light-Emitting Displays
Digest of Technical Papers SID International Symposium, 2002, 33, 614
0.52Citations (PDF)
114P-103: Novel Poly-Si TFT Pixel Electrode Circuits and Current Programmed Active-Matrix Driving Methods for AM-OLEDs
Digest of Technical Papers SID International Symposium, 2002, 33, 618
0.513Citations (PDF)
115Gate-planarized organic polymer thin film transistors
Journal of Electronic Materials, 2002, 31, 512-519
2.312Citations (PDF)
116Accurate small-spot luminance measurements
Displays, 2002, 23, 177-182
3.213Citations (PDF)
117Influence of the Amorphous Silicon Thickness on Top Gate Thin-Film Transistor Electrical Performances
Japanese Journal of Applied Physics, 2001, 40, 530-537
1.979Citations (PDF)
118Four-Thin Film Transistor Pixel Electrode Circuits for Active-Matrix Organic Light-Emitting Displays
Japanese Journal of Applied Physics, 2001, 40, 1199-1208
1.962Citations (PDF)
119Monte Carlo analysis of the spectral photon emission and extraction efficiency of organic light-emitting devices
Journal of Applied Physics, 2001, 90, 1827-1830
2.135Citations (PDF)
120Interference fringe-free transmission spectroscopy of amorphous thin films
Journal of Applied Physics, 2000, 88, 5764-5771
2.115Citations (PDF)
121High-efficiency organic polymer light-emitting heterostructure devices on flexible plastic substrates
Applied Physics Letters, 2000, 76, 661-663
3.0105Citations (PDF)
122Light output measurements of the organic light-emitting devices
Review of Scientific Instruments, 2000, 71, 2104-2107
1.521Citations (PDF)
123Two-Dimensional Numerical Simulation of Solid-Phase-Crystallized Polysilicon Thin-Film Transistor Characteristics
Japanese Journal of Applied Physics, 1999, 38, 2251-2255
1.945Citations (PDF)
124Ultraviolet-light Induced Liquid-Crystal Alignment on Polyimide Films
Japanese Journal of Applied Physics, 1999, 38, 5996-6004
1.922Citations (PDF)
125A Novel Structure to Improve the Viewing Angle Characteristics of Twisted-Nematic Liquid Crystal Displays
Japanese Journal of Applied Physics, 1999, 38, 4110-4116
1.92Citations (PDF)
126Microstructure characterization of amorphous thin solid films in a fringe-free environment
Journal of Applied Physics, 1999, 85, 388-396
2.15Citations (PDF)
127Method of collecting pure vibrational absorption spectra of amorphous thin films
Thin Solid Films, 1999, 349, 283-288
1.92Citations (PDF)
128Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665°C strain point glass substrates
Thin Solid Films, 1999, 338, 281-285
1.910Citations (PDF)
129Tuning Optical and Electronic Properties of Bithiazole Containing Polymers byN-Methylation
Macromolecules, 1999, 32, 2484-2489
5.026Citations (PDF)
130Small Spot Contrast Measurements in High Performance Displays
Digest of Technical Papers SID International Symposium, 1999, 30, 516
0.52Citations (PDF)
131Synthesis and Characterization of Conjugated, n-Dopable, Bithiazole-Containing Polymers
Chemistry of Materials, 1998, 10, 1713-1719
6.750Citations (PDF)
132Observation of incident angle dependent phonon absorption in hydrogenated amorphous silicon nitride thin films
Applied Physics Letters, 1998, 73, 3866-3868
3.016Citations (PDF)
133Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure
Applied Physics Letters, 1998, 72, 2874-2876
3.025Citations (PDF)
134Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal Displays
Japanese Journal of Applied Physics, 1998, 37, 4704-4710
1.9111Citations (PDF)
135Top-Gate Staggered Amorphous Silicon Thin-Film Transistors: Series Resistance and Nitride Thickness Effects
Japanese Journal of Applied Physics, 1998, 37, 5914-5920
1.985Citations (PDF)
136High-performance top-gate a-Si:H TFTs for AMLCDs
Digest of Technical Papers SID International Symposium, 1998, 29, 383
0.54Citations (PDF)
137Full-Color Light-Emitting Devices Based on π- and σ-Conjugated Polymer Materials
Digest of Technical Papers SID International Symposium, 1998, 29, 663
0.52Citations (PDF)
138Longitudinal Vibrational Absorption Modes of Hydrogenated Amorphous Silicon Nitride Thin Films
Materials Research Society Symposia Proceedings, 1998, 507,
0.10Citations (PDF)
139Aluminum Gate Metallization for AMLCDs
Materials Research Society Symposia Proceedings, 1997, 471,
0.14Citations (PDF)
140Electrical Characteristics of New LDD Poly-Si TFT with MIS-Alignment Tolerant Structure for AMLCDs
Materials Research Society Symposia Proceedings, 1997, 471,
0.10Citations (PDF)
141Electrical and Optical Properties of Low Dielectric Constant Planarization Polymer for High-Aperture-Ratio a-Si:H TFT-LCDs
Materials Research Society Symposia Proceedings, 1997, 471,
0.18Citations (PDF)
142ITO surface ball formation induced by atomic hydrogen in PECVD and HW-CVD tools
Thin Solid Films, 1997, 304, 123-129
1.939Citations (PDF)
143Direct determination of the quadratic electro-optic coefficient in an a-Si:H based waveguide
Journal of Non-Crystalline Solids, 1996, 198-200, 107-110
3.312Citations (PDF)
144Study of sub-bandgap photo-induced absorption in a-Si:H using excitation spectroscopy in a waveguide configuration
Journal of Non-Crystalline Solids, 1996, 198-200, 259-262
3.34Citations (PDF)
145Patterning of transparent conducting oxide thin films by wet etching for a-Si:H TFT-LCDs
Journal of Electronic Materials, 1996, 25, 1806-1817
2.348Citations (PDF)
146Paramagnetic point defects in silicon nitride and silicon oxynitride thin films on silicon
Colloids and Surfaces A: Physicochemical and Engineering Aspects, 1996, 115, 311-317
5.220Citations (PDF)
147Creation and Properties of Nitrogen Dangling Bond Defects in Silicon Nitride Thin Films
Journal of the Electrochemical Society, 1996, 143, 3685-3691
3.132Citations (PDF)
148Selective Deposition of Polycrystalline Silicon Thin Films by Hot-Wire CVD
Materials Research Society Symposia Proceedings, 1995, 403,
0.10Citations (PDF)
149Photoluminescence and electron spin resonance in nitrogen-rich amorphous silicon nitride
Journal of Non-Crystalline Solids, 1995, 182, 103-108
3.310Citations (PDF)
150Nature of the Si and N dangling bonds in silicon nitride
Journal of Non-Crystalline Solids, 1995, 187, 297-300
3.348Citations (PDF)
151Temperature dependence of the electron-spin resonance in nitrogen-rich amorphous silicon nitride
Physical Review B, 1994, 49, 13420-13422
3.49Citations (PDF)
152Photocreation and photobleaching of a-Si N1.6:H/c-Si interface states studied by photocapacitance transient spectroscopy
Physica B: Condensed Matter, 1993, 185, 542-545
2.80Citations (PDF)
153Defects in amorphous hydrogenated silicon nitride films
Journal of Non-Crystalline Solids, 1993, 164-166, 1055-1060
3.321Citations (PDF)
154Near-ir absorption in chemically vapor depositeda-SiNx:H films
Physical Review B, 1992, 46, 15163-15168
3.48Citations (PDF)
155Photoluminescence in Nitrogen-Rich a-SiN<sub>x</sub>:H
Materials Research Society Symposia Proceedings, 1992, 258,
0.19Citations (PDF)
156Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: II .
Journal of the Electrochemical Society, 1992, 139, 880-889
3.1108Citations (PDF)
157Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors
Thin Solid Films, 1992, 216, 137-141
1.913Citations (PDF)
158Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films
Journal of Non-Crystalline Solids, 1991, 137-138, 291-294
3.356Citations (PDF)
159Determination of electron and hole mobilities in an a-Si:H from photo-electric effects in a waveguide structure
Journal of Non-Crystalline Solids, 1991, 137-138, 455-458
3.32Citations (PDF)
160Transient photocapacitance and capacitance studies of interface and bulk states in metal / a-SiN1.6:H / a-Si:H / c-Si devices
Journal of Non-Crystalline Solids, 1991, 137-138, 1051-1054
3.34Citations (PDF)
161Thermal Annealing of Light-Induced K Centers in Hydrogenated Amorphous Silicon Nitride
Materials Research Society Symposia Proceedings, 1991, 219,
0.12Citations (PDF)
162Influence of the Gate Bias and Temperature on Positive Charge Generation in TFT Gate-Quality Amorphous Silicon Nitride Films
Materials Research Society Symposia Proceedings, 1991, 219,
0.13Citations (PDF)
163Bias Stress Induced Instabilities in Amorphous Silicon Nitride / Crystalline Silicon and Amorphous Silicon Nitride / Amorphous Silicon Structures
Materials Research Society Symposia Proceedings, 1991, 219,
0.15Citations (PDF)
164Structural identification of the silicon and nitrogen dangling‐bond centers in amorphous silicon nitride
Journal of Applied Physics, 1991, 70, 346-354
2.176Citations (PDF)
165Optically Induced Paramagnetism in Amorphous Hydrogenated Silicon Nitride Thin Films
Materials Research Society Symposia Proceedings, 1991, 242,
0.17Citations (PDF)
166Structure, Characteristics, and the Application of Phosphorus Doped Hydrogenated Microcrystalline Silicon
Materials Research Society Symposia Proceedings, 1991, 242,
0.10Citations (PDF)
167Effect of Gate Dielectric on Performance of Polysilicon thin Film Transistors
Materials Research Society Symposia Proceedings, 1990, 182,
0.110Citations (PDF)
168The Generation and Bleaching of Positive Charge in Gate-Quality Nitrogen-Rich Amorphous Silicon Nitride By Sub-Bandgap Illumination
Materials Research Society Symposia Proceedings, 1990, 192,
0.13Citations (PDF)
169The nature of the dominant deep trap in amorphous silicon nitride films: Evidence for a negative correlation energy
Applied Surface Science, 1989, 39, 392-405
6.769Citations (PDF)
170Electron spin resonance study of metal-nitride-silicon structures: Observation of Si dangling bonds with different configurations and trapping properties in silicon nitride
Applied Surface Science, 1989, 39, 412-419
6.77Citations (PDF)
171Gate dielectric and contact effects in hydrogenated amorphous silicon‐silicon nitride thin‐film transistors
Journal of Applied Physics, 1989, 65, 3951-3957
2.1125Citations (PDF)
172Light-induced effects in hydrogenated amorphous nitrogen-rich silicon nitride films
Journal of Non-Crystalline Solids, 1989, 114, 612-614
3.312Citations (PDF)
173Nature of the dominant deep trap in amorphous silicon nitride
Physical Review B, 1988, 38, 8226-8229
3.496Citations (PDF)
174Contact resistance to undoped and phosphorus‐doped hydrogenated amorphous silicon films
Applied Physics Letters, 1988, 53, 1943-1945
3.051Citations (PDF)
175Minority Carrier Injection and Series Resistance Effects in Hydrogenated Amorphous Silicon Schottky Barrier Diodes
Materials Research Society Symposia Proceedings, 1985, 49,
0.13Citations (PDF)
176Far UV pulsed laser melting of silicon
Applied Physics Letters, 1985, 46, 547-549
3.059Citations (PDF)
177Optical, electrical and contact properties of homoCVD a-Si:H films
Journal of Non-Crystalline Solids, 1985, 77-78, 789-792
3.36Citations (PDF)
178Electrical and photovoltaic properties of trans-polyacetylene
Journal Physics D: Applied Physics, 1984, 17, 805-817
3.012Citations (PDF)
179Electrical and photovoltaic properties of metal contacts to trans-polyacetylene
Thin Solid Films, 1984, 113, 1-14
1.910Citations (PDF)
180Transport properties and defect states of a-Si:H grown by HOMOCVD
Journal of Non-Crystalline Solids, 1984, 66, 51-58
3.36Citations (PDF)
181Metal - Polyacetylene Schottky Barrier Diodes
Molecular Crystals and Liquid Crystals, 1984, 105, 203-217
1.246Citations (PDF)
182Photovoltaic properties of In/trans-polyacetylene/Electrodag+502 Schottky barrier cells
Solar Cells, 1983, 9, 281-288
0.84Citations (PDF)
183REVIEW OF CONDUCTOR-POLYMERIC SEMICONDUCTOR SOLAR CELLS
Journal De Physique Colloque, 1983, 44, C3-529-C3-535
0.00Citations (PDF)
184Photovoltaic and rectification properties of In/trans-(CH)x/electrodag +502 schottky-barrier cells
Molecular Crystals and Liquid Crystals, 1982, 83, 319-327
1.19Citations (PDF)
185Photovoltaic properties of the poly-2-vinylpyridine iodine complex—SnO2 system
Journal of Applied Polymer Science, 1982, 27, 1-9
2.722Citations (PDF)
186Novel approach to the study of electrical conduction in bromine-doped polyacetylene
Thin Solid Films, 1982, 92, 243-251
1.96Citations (PDF)
187Electrical conductivity and infrared absorption of trans- polyacetylene in the presence of iodine
Journal of the Chemical Society, Faraday Transactions 2, 1981, 77, 2157-2168
1.113Citations (PDF)
188Junction formation between undoped polyacetylene and metals
European Polymer Journal, 1980, 16, 677-678
5.99Citations (PDF)