| 1 | Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructure | 13.7 | 14 | Citations (PDF) |
| 2 | Unconventional Spin Hall Magnetoresistance in Noncollinear Antiferromagnet/Heavy-Metal Stacks | 8.2 | 5 | Citations (PDF) |
| 3 | Magnetic phase diagram of Mn3+xSn1−x epitaxial thin films: Extending the anomalous Hall effect to low temperatures via intrinsic alloying | 3.6 | 5 | Citations (PDF) |
| 4 | Electrical coherent driving of chiral antiferromagnet | 36.3 | 11 | Citations (PDF) |
| 5 | Pitch Scaling Prospect of Ultra-Small Magnetic Tunnel Junctions for High-Density STT-MRAM: Effects of Magnetostatic Interference From Neighboring Bits | 3.4 | 10 | Citations (PDF) |
| 6 | Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities | 1.0 | 40 | Citations (PDF) |
| 7 | CMOS plus stochastic nanomagnets enabling heterogeneous computers for probabilistic inference and learning | 13.7 | 81 | Citations (PDF) |
| 8 | Collective Spin-Wave Dynamics in Gyroid Ferromagnetic Nanostructures | 8.0 | 14 | Citations (PDF) |
| 9 | Room-temperature flexible manipulation of the quantum-metric structure in a topological chiral antiferromagnet | 16.0 | 45 | Citations (PDF) |
| 10 | Double-free-layer stochastic magnetic tunnel junctions with synthetic antiferromagnets | 3.9 | 11 | Citations (PDF) |
| 11 | Voltage-insensitive stochastic magnetic tunnel junctions with double free layers | 3.0 | 12 | Citations (PDF) |
| 12 | High-resolution three-dimensional imaging of topological textures in nanoscale single-diamond networks | 32.2 | 10 | Citations (PDF) |
| 13 | Nanoscale spin rectifiers for harvesting ambient radiofrequency energy | 33.3 | 24 | Citations (PDF) |
| 14 | Effect of nonlinear magnon interactions on stochastic magnetization switching | 3.4 | 8 | Citations (PDF) |
| 15 | Comparative Study of Current-Induced Torque in Cr/CoFeB/MgO and W/CoFeB/MgO | 8.7 | 15 | Citations (PDF) |
| 16 | A Full-Stack View of Probabilistic Computing With p-Bits: Devices, Architectures, and Algorithms | 1.5 | 125 | Citations (PDF) |
| 17 | Thermal stability of non-collinear antiferromagnetic Mn3Sn nanodot | 3.0 | 10 | Citations (PDF) |
| 18 | Coherent antiferromagnetic spintronics | 33.4 | 281 | Citations (PDF) |
| 19 | Nonlinear conductance in nanoscale CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis | 3.4 | 4 | Citations (PDF) |
| 20 | Magnetic order in nanoscale gyroid networks | 3.4 | 5 | Citations (PDF) |
| 21 | Handedness anomaly in a non-collinear antiferromagnet under spin–orbit torque | 33.4 | 82 | Citations (PDF) |
| 22 | Hardware-Aware
In Situ
Learning Based on Stochastic Magnetic Tunnel Junctions | 3.9 | 97 | Citations (PDF) |
| 23 | Nanometer-thin L1-MnAl film with B2-CoAl underlayer for high-speed and high-density STT-MRAM: Structure and magnetic properties | 3.0 | 18 | Citations (PDF) |
| 24 | Generalized scaling of spin qubit coherence in over 12,000 host materials | 7.5 | 101 | Citations (PDF) |
| 25 | Observation of domain structure in non-collinear antiferromagnetic Mn3Sn thin films by magneto-optical Kerr effect | 3.0 | 30 | Citations (PDF) |
| 26 | Local bifurcation with spin-transfer torque in superparamagnetic tunnel junctions | 13.7 | 19 | Citations (PDF) |
| 27 | External-Field-Robust Stochastic Magnetic Tunnel Junctions Using a Free Layer with Synthetic Antiferromagnetic Coupling | 3.9 | 11 | Citations (PDF) |
| 28 | Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition | 3.6 | 66 | Citations (PDF) |
| 29 | Temperature dependence of the energy barrier in X/1X nm shape-anisotropy magnetic tunnel junctions | 3.0 | 14 | Citations (PDF) |
| 30 | Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions | 3.0 | 7 | Citations (PDF) |
| 31 | Theory of relaxation time of stochastic nanomagnets | 3.4 | 56 | Citations (PDF) |
| 32 | Nanosecond Random Telegraph Noise in In-Plane Magnetic Tunnel Junctions | 8.2 | 144 | Citations (PDF) |
| 33 | Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque | 3.0 | 42 | Citations (PDF) |
| 34 | Double-Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits | 3.9 | 37 | Citations (PDF) |
| 35 | Chiral-spin rotation of non-collinear antiferromagnet by spin–orbit torque | 33.4 | 195 | Citations (PDF) |
| 36 | Electrically connected spin-torque oscillators array for 2.4 GHz WiFi band transmission and energy harvesting | 13.7 | 77 | Citations (PDF) |
| 37 | Correlation of anomalous Hall effect with structural parameters and magnetic ordering in Mn3+xSn1−x thin films | 1.2 | 27 | Citations (PDF) |
| 38 | Influence of domain wall anisotropy on the current-induced hysteresis loop shift for quantification of the Dzyaloshinskii-Moriya interaction | 3.4 | 12 | Citations (PDF) |
| 39 | Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2 | 3.4 | 24 | Citations (PDF) |
| 40 | Magnetization processes and magnetic domain structures in Ta/CoFeB/MgO stacks | 2.7 | 10 | Citations (PDF) |
| 41 | Sigmoidal curves of stochastic magnetic tunnel junctions with perpendicular easy axis | 3.0 | 27 | Citations (PDF) |
| 42 | Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing | 33.4 | 108 | Citations (PDF) |
| 43 | Temperature dependence of intrinsic critical current in perpendicular easy axis CoFeB/MgO magnetic tunnel junctions | 3.0 | 9 | Citations (PDF) |
| 44 | Crystal orientation and anomalous Hall effect of sputter-deposited non-collinear antiferromagnetic Mn3Sn thin films | 2.1 | 45 | Citations (PDF) |
| 45 | Energy Efficient Control of Ultrafast Spin Current to Induce Single Femtosecond Pulse Switching of a Ferromagnet | 12.6 | 47 | Citations (PDF) |
| 46 | Multidomain Memristive Switching of
Pt
38
Mn
62
/
[
Co
/
Ni
]
n
| 3.9 | 13 | Citations (PDF) |
| 47 | Probing edge condition of nanoscale CoFeB/MgO magnetic tunnel junctions by spin-wave resonance | 3.0 | 3 | Citations (PDF) |
| 48 | Engineering Single-Shot All-Optical Switching of Ferromagnetic Materials | 8.7 | 54 | Citations (PDF) |
| 49 | Spin-orbit torque switching of an antiferromagnetic metallic heterostructure | 13.7 | 71 | Citations (PDF) |
| 50 | Giant voltage-controlled modulation of spin Hall nano-oscillator damping | 13.7 | 66 | Citations (PDF) |
| 51 | Complex switching behavior of magnetostatically coupled single-domain nanomagnets probed by micro-Hall magnetometry | 3.0 | 5 | Citations (PDF) |
| 52 | Zero-field spin precession dynamics of high-mobility two-dimensional electron gas in persistent spin helix regime | 3.4 | 7 | Citations (PDF) |
| 53 | Visualizing Magnetic Structure in 3D Nanoscale Ni–Fe Gyroid Networks | 8.7 | 45 | Citations (PDF) |
| 54 | Composition dependence of spin−orbit torque in Pt1−xMnx/CoFeB heterostructures | 3.0 | 9 | Citations (PDF) |
| 55 | Current distribution in metallic multilayers from resistance measurements | 3.4 | 7 | Citations (PDF) |
| 56 | Spin-Pumping-Free Determination of Spin-Orbit Torque Efficiency from Spin-Torque Ferromagnetic Resonance | 3.9 | 36 | Citations (PDF) |
| 57 | A 47.14-$\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications | 3.6 | 65 | Citations (PDF) |
| 58 | Families of magnetic semiconductors — an overview | 3.7 | 73 | Citations (PDF) |
| 59 | Properties of sputtered full Heusler alloy Cr
2
MnSb and its application in a magnetic tunnel junction | 2.9 | 16 | Citations (PDF) |
| 60 | Magnetization dynamics and related phenomena in semiconductors with ferromagnetism | 3.7 | 1 | Citations (PDF) |
| 61 | Write-error rate of nanoscale magnetic tunnel junctions in the precessional regime | 3.0 | 9 | Citations (PDF) |
| 62 | Formation and current-induced motion of synthetic antiferromagnetic skyrmion bubbles | 13.7 | 256 | Citations (PDF) |
| 63 | Artificial Neuron and Synapse Realized in an Antiferromagnet/Ferromagnet Heterostructure Using Dynamics of Spin–Orbit Torque Switching | 24.5 | 177 | Citations (PDF) |
| 64 | Reversal of domain wall chirality with ferromagnet thickness in W/(Co)FeB/MgO systems | 3.0 | 9 | Citations (PDF) |
| 65 | Stack structure and temperature dependence of spin-orbit torques in heterostructures with antiferromagnetic PtMn | 3.0 | 11 | Citations (PDF) |
| 66 | Integer factorization using stochastic magnetic tunnel junctions | 37.9 | 578 | Citations (PDF) |
| 67 | Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance | 3.0 | 24 | Citations (PDF) |
| 68 | Giant perpendicular magnetic anisotropy in Ir/Co/Pt multilayers | 2.7 | 39 | Citations (PDF) |
| 69 | Spin transport and spin torque in antiferromagnetic devices | 16.0 | 433 | Citations (PDF) |
| 70 | Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions | 13.7 | 191 | Citations (PDF) |
| 71 | Time and spatial evolution of spin–orbit torque-induced magnetization switching in W/CoFeB/MgO structures with various sizes | 1.9 | 15 | Citations (PDF) |
| 72 | Electric-field effect on magnetic anisotropy in Pt/Co/Pd/MgO structures deposited on GaAs and Si substrates | 2.1 | 18 | Citations (PDF) |
| 73 | Temperature dependence of ferromagnetic resonance spectra of permalloy on (Bi1− x Sb x )2Te3 | 1.9 | 5 | Citations (PDF) |
| 74 | Electric-field effect on the easy cone angle of the easy-cone state in CoFeB/MgO investigated by ferromagnetic resonance | 3.0 | 15 | Citations (PDF) |
| 75 | Free-layer size dependence of anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions | 2.1 | 7 | Citations (PDF) |
| 76 | Scalability and wide temperature range operation of spin-orbit torque switching devices using Co/Pt multilayer nanowires | 3.0 | 12 | Citations (PDF) |
| 77 | Angle dependent magnetoresistance in heterostructures with antiferromagnetic and non-magnetic metals | 3.0 | 13 | Citations (PDF) |
| 78 | Evaluation of energy barrier of CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis using retention time measurement | 1.9 | 24 | Citations (PDF) |
| 79 | Temperature-dependent properties of CoFeB/MgO thin films: Experiments versus simulations | 3.4 | 59 | Citations (PDF) |
| 80 | An effect of capping-layer material on interfacial anisotropy and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO/capping-layer structure | 3.0 | 8 | Citations (PDF) |
| 81 | Perspective: Spintronic synapse for artificial neural network | 2.0 | 87 | Citations (PDF) |
| 82 | Preface to Special Topic: New Physics and Materials for Neuromorphic Computation | 2.0 | 9 | Citations (PDF) |
| 83 | Characterization of spin–orbit torque-controlled synapse device for artificial neural network applications | 1.9 | 20 | Citations (PDF) |
| 84 | Non-linear variation of domain period under electric field in demagnetized CoFeB/MgO stacks with perpendicular easy axis | 3.0 | 5 | Citations (PDF) |
| 85 | Spin-orbit torques in high-resistivity-W/CoFeB/MgO | 3.0 | 110 | Citations (PDF) |
| 86 | Evidence for Ferromagnetic Clusters in the Colossal-Magnetoresistance Material
EuB6 | 8.2 | 52 | Citations (PDF) |
| 87 | Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer | 1.2 | 10 | Citations (PDF) |
| 88 | Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance | 2.1 | 9 | Citations (PDF) |
| 89 | Magnetic domain-wall creep driven by field and current in Ta/CoFeB/MgO | 1.2 | 10 | Citations (PDF) |
| 90 | Ferromagnetic resonance spectra of Py deposited on (Bi1-xSbx)2Te3 | 1.2 | 7 | Citations (PDF) |
| 91 | Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures | 3.0 | 83 | Citations (PDF) |
| 92 | Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices | 3.4 | 49 | Citations (PDF) |
| 93 | Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer | 1.4 | 22 | Citations (PDF) |
| 94 | Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device | 1.4 | 11 | Citations (PDF) |
| 95 | Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions | 1.9 | 3 | Citations (PDF) |
| 96 | Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers | 1.9 | 20 | Citations (PDF) |
| 97 | Magnetization switching schemes for nanoscale three-terminal spintronics devices | 1.9 | 46 | Citations (PDF) |
| 98 | Design of a variation‐resilient single‐ended non‐volatile six‐input lookup table circuit with a redundant‐magnetic tunnel junction‐based active load for smart Internet‐of‐things applications | 0.7 | 5 | Citations (PDF) |
| 99 | Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy | 7.5 | 55 | Citations (PDF) |
| 100 | Analogue spin–orbit torque device for artificial-neural-network-based associative memory operation | 2.1 | 175 | Citations (PDF) |
| 101 | A spin transfer torque magnetoresistance random access memory-based high-density and ultralow-power associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching | 1.9 | 4 | Citations (PDF) |
| 102 | Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis | 3.0 | 22 | Citations (PDF) |
| 103 | Electric-field effect on spin-wave resonance in a nanoscale CoFeB/MgO magnetic tunnel junction | 3.0 | 17 | Citations (PDF) |
| 104 | Spintronics based random access memory: a review | 14.0 | 1,068 | Citations (PDF) |
| 105 | Spin-orbit torque induced magnetization switching in Co/Pt multilayers | 3.0 | 36 | Citations (PDF) |
| 106 | Magnetic and transport properties of Sb2Te3 doped with high concentration of Cr | 2.1 | 20 | Citations (PDF) |
| 107 | Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20 nm | 1.9 | 21 | Citations (PDF) |
| 108 | Magnetic properties of FeV/MgO-based structures | 2.1 | 7 | Citations (PDF) |
| 109 | Spin-orbit torques and Dzyaloshinskii-Moriya interaction in PtMn/[Co/Ni] heterostructures | 3.0 | 18 | Citations (PDF) |
| 110 | Fast neutron tolerance of the perpendicular-anisotropy CoFeB–MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm | 1.9 | 7 | Citations (PDF) |
| 111 | Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field | 1.2 | 7 | Citations (PDF) |
| 112 | Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction | 1.9 | 7 | Citations (PDF) |
| 113 | Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation | 1.9 | 19 | Citations (PDF) |
| 114 | Magnetic and Free-Layer Properties of MgO/(Co)FeB/MgO Structures: Dependence on CoFeB Composition | 1.1 | 17 | Citations (PDF) |
| 115 | Magnetization Reversal by Field and Current Pulses in Elliptic CoFeB/MgO Tunnel Junctions With Perpendicular Easy Axis | 1.1 | 13 | Citations (PDF) |
| 116 | Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO | 3.0 | 79 | Citations (PDF) |
| 117 | Electric field control of Skyrmions in magnetic nanodisks | 3.0 | 62 | Citations (PDF) |
| 118 | Optogenetic activation of axon guidance receptors controls direction of neurite outgrowth | 3.4 | 26 | Citations (PDF) |
| 119 | Peculiar temperature dependence of electric-field effect on magnetic anisotropy in Co/Pd/MgO system | 3.0 | 40 | Citations (PDF) |
| 120 | Effect of electric-field modulation of magnetic parameters on domain structure in MgO/CoFeB | 1.2 | 30 | Citations (PDF) |
| 121 | Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance | 3.0 | 96 | Citations (PDF) |
| 122 | An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories | 2.5 | 154 | Citations (PDF) |
| 123 | Current-induced domain wall motion in magnetic nanowires with various widths down to less than 20 nm | 1.9 | 6 | Citations (PDF) |
| 124 | Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis | 3.4 | 6 | Citations (PDF) |
| 125 | Scanning the Issue | 9.6 | 49 | Citations (PDF) |
| 126 | Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing | 9.6 | 129 | Citations (PDF) |
| 127 | Fermi level position, Coulomb gap and Dresselhaus splitting in (Ga,Mn)As | 3.4 | 24 | Citations (PDF) |
| 128 | Study on initial current leakage spots in CoFeB-capped MgO tunnel barrier by conductive atomic force microscopy | 1.9 | 5 | Citations (PDF) |
| 129 | Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li | 3.0 | 7 | Citations (PDF) |
| 130 | A 600-µW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme | 1.9 | 19 | Citations (PDF) |
| 131 | Magnetic Properties of CoFeB–MgO Stacks With Different Buffer-Layer Materials (Ta or Mo) | 1.4 | 20 | Citations (PDF) |
| 132 | A spin–orbit torque switching scheme with collinear magnetic easy axis and current configuration | 32.2 | 643 | Citations (PDF) |
| 133 | Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system | 33.4 | 1,041 | Citations (PDF) |
| 134 | Atomic-Scale Structure and Local Chemistry of CoFeB–MgO Magnetic Tunnel Junctions | 8.7 | 104 | Citations (PDF) |
| 135 | Improvement of Thermal Tolerance of CoFeB–MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition | 1.4 | 21 | Citations (PDF) |
| 136 | Current-Induced Magnetization Switching of CoFeB/Ta/[Co/Pd (Pt)]-Multilayers in Magnetic Tunnel Junctions With Perpendicular Anisotropy | 1.4 | 7 | Citations (PDF) |
| 137 | Magnetic stray-field studies of a single Cobalt nanoelement as a component of the building blocks of artificial square spin ice | 2.7 | 13 | Citations (PDF) |
| 138 | Electric-Field Modulation of Damping Constant in a Ferromagnetic Semiconductor (Ga,Mn)As | 8.2 | 33 | Citations (PDF) |
| 139 | Dependence of magnetic properties of MgO/CoFeB/Ta stacks on CoFeB and Ta thicknesses | 1.9 | 12 | Citations (PDF) |
| 140 | Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots | 3.0 | 2 | Citations (PDF) |
| 141 | Electric-field induced nonlinear ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction | 3.0 | 17 | Citations (PDF) |
| 142 | Temperature dependence of energy barrier in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis | 3.0 | 35 | Citations (PDF) |
| 143 | Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact | 1.9 | 6 | Citations (PDF) |
| 144 | Power-gated 32 bit microprocessor with a power controller circuit activated by deep-sleep-mode instruction achieving ultra-low power operation | 1.9 | 8 | Citations (PDF) |
| 145 | Thermal stability of a magnetic domain wall in nanowires | 3.4 | 29 | Citations (PDF) |
| 146 | Control of magnetism by electric fields | 32.2 | 910 | Citations (PDF) |
| 147 | Driving Force in Diffusion and Redistribution of Reducing Agents During Redox Reaction on the Surface of CoFeB Film | 1.4 | 1 | Citations (PDF) |
| 148 | CoFeB Thickness Dependence of Damping Constants for Single and Double CoFeB-MgO Interface Structures | 1.1 | 37 | Citations (PDF) |
| 149 | Temperature dependence of lattice parameter of (Ga,Mn)As on GaAs substrate | 1.9 | 2 | Citations (PDF) |
| 150 | Localized precessional mode of domain wall controlled by magnetic field and dc current | 2.1 | 4 | Citations (PDF) |
| 151 | In-plane anisotropy of a nano-scaled magnetic tunnel junction with perpendicular magnetic easy axis | 1.9 | 6 | Citations (PDF) |
| 152 | Ferromagnetic resonance in nanoscale CoFeB/MgO magnetic tunnel junctions | 2.0 | 15 | Citations (PDF) |
| 153 | Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing | 3.0 | 14 | Citations (PDF) |
| 154 | Nanocluster building blocks of artificial square spin ice: Stray-field studies of thermal dynamics | 2.0 | 15 | Citations (PDF) |
| 155 | Inverse spin Hall effect in Pt/(Ga,Mn)As | 3.0 | 4 | Citations (PDF) |
| 156 | Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO | 3.0 | 195 | Citations (PDF) |
| 157 | Ferromagnetic resonance of Py deposited on ZnO grown by molecular beam epitaxy | 1.9 | 4 | Citations (PDF) |
| 158 | Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction | 3.6 | 58 | Citations (PDF) |
| 159 | Adiabatic spin-transfer-torque-induced domain wall creep in a magnetic metal | 16.0 | 49 | Citations (PDF) |
| 160 | Process-induced damage and its recovery for a CoFeB–MgO magnetic tunnel junction with perpendicular magnetic easy axis | 1.9 | 22 | Citations (PDF) |
| 161 | Distribution of critical current density for magnetic domain wall motion | 2.0 | 3 | Citations (PDF) |
| 162 | Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell | 1.9 | 8 | Citations (PDF) |
| 163 | Magnetic anisotropy in Ta/CoFeB/MgO investigated by x-ray magnetic circular dichroism and first-principles calculation | 3.0 | 48 | Citations (PDF) |
| 164 | Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device | 1.4 | 3 | Citations (PDF) |
| 165 | Strain and origin of inhomogeneous broadening probed by optically detected nuclear magnetic resonance in a (110) GaAs quantum well | 3.4 | 6 | Citations (PDF) |
| 166 | Properties of (Ga,Mn)As codoped with Li | 3.0 | 1 | Citations (PDF) |
| 167 | Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm | 3.0 | 273 | Citations (PDF) |
| 168 | Domain Wall Motion Device for Nonvolatile Memory and Logic — Size Dependence of Device Properties | 1.4 | 24 | Citations (PDF) |
| 169 | Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages | 3.0 | 50 | Citations (PDF) |
| 170 | Power reduction by power gating in differential pair type spin-transfer-torque magnetic random access memories for low-power nonvolatile cache memories | 1.9 | 4 | Citations (PDF) |
| 171 | Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs | 1.9 | 38 | Citations (PDF) |
| 172 | Direct imaging of gate-controlled persistent spin helix state in a modulation-doped GaAs/AlGaAs quantum well | 2.1 | 55 | Citations (PDF) |
| 173 | A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions | 1.9 | 1 | Citations (PDF) |
| 174 | Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion | 1.9 | 9 | Citations (PDF) |
| 175 | Strain dependence of nuclear spin coherence in a (110)GaAs/AlGaAs quantum well | 1.9 | 2 | Citations (PDF) |
| 176 | Direct mapping of photoexcited local spins in a modulation-doped GaAs/AlGaAs wires | 1.9 | 10 | Citations (PDF) |
| 177 | Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis | 2.0 | 31 | Citations (PDF) |
| 178 | Dilute ferromagnetic semiconductors: Physics and spintronic structures | 40.7 | 919 | Citations (PDF) |
| 179 | Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure | 2.0 | 11 | Citations (PDF) |
| 180 | Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current | 2.0 | 6 | Citations (PDF) |
| 181 | A Nonvolatile Associative Memory-Based Context-Driven Search Engine Using 90 nm CMOS/MTJ-Hybrid Logic-in-Memory Architecture | 2.5 | 34 | Citations (PDF) |
| 182 | Electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO investigated by ferromagnetic resonance | 3.0 | 115 | Citations (PDF) |
| 183 | Quantitative characterization of the spin-orbit torque using harmonic Hall voltage measurements | 3.4 | 560 | Citations (PDF) |
| 184 | Interface control of the magnetic chirality in CoFeB/MgO heterostructures with heavy-metal underlayers | 13.7 | 380 | Citations (PDF) |
| 185 | DC voltages in Py and Py/Pt under ferromagnetic resonance | 2.1 | 32 | Citations (PDF) |
| 186 | Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions | 1.3 | 44 | Citations (PDF) |
| 187 | Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect | 3.0 | 97 | Citations (PDF) |
| 188 | Electric Field-Induced Magnetization Switching in CoFeB-MgO—Static Magnetic Field Angle Dependence | 1.4 | 2 | Citations (PDF) |
| 189 | Anomalous temperature dependence of current-induced torques inCoFeB/MgOheterostructures with Ta-based underlayers | 3.4 | 102 | Citations (PDF) |
| 190 | Effect of spin Hall torque on current-induced precessional domain wall motion | 2.1 | 14 | Citations (PDF) |
| 191 | Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers | 1.9 | 4 | Citations (PDF) |
| 192 | Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches | 2.0 | 12 | Citations (PDF) |
| 193 | Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer | 2.0 | 7 | Citations (PDF) |
| 194 | Co/Pt multilayer-based magnetic tunnel junctions with a CoFeB/Ta insertion layer | 2.0 | 23 | Citations (PDF) |
| 195 | Design of an energy-efficient 2T-2MTJ nonvolatile TCAM based on a parallel-serial-combined search scheme | 0.4 | 9 | Citations (PDF) |
| 196 | Complementary 5T-4MTJ nonvolatile TCAM cell circuit with phase-selective parallel writing scheme | 0.4 | 9 | Citations (PDF) |
| 197 | A compact low-power nonvolatile flip-flop using domain-wall-motion-device-based single-ended structure | 0.4 | 8 | Citations (PDF) |
| 198 | In-plane magnetic field dependence of electric field-induced magnetization switching | 3.0 | 59 | Citations (PDF) |
| 199 | Depinning probability of a magnetic domain wall in nanowires by spin-polarized currents | 13.7 | 47 | Citations (PDF) |
| 200 | MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions With Perpendicular Easy Axis | 1.4 | 142 | Citations (PDF) |
| 201 | A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme | 3.6 | 78 | Citations (PDF) |
| 202 | Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO | 3.0 | 33 | Citations (PDF) |
| 203 | Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers | 3.0 | 130 | Citations (PDF) |
| 204 | Bridging semiconductor and magnetism | 2.0 | 17 | Citations (PDF) |
| 205 | Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films | 3.4 | 23 | Citations (PDF) |
| 206 | Electrical endurance of Co/Ni wire for magnetic domain wall motion device | 3.0 | 8 | Citations (PDF) |
| 207 | Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper | 3.0 | 103 | Citations (PDF) |
| 208 | Two-barrier stability that allows low-power operation in current-induced domain-wall motion | 13.7 | 48 | Citations (PDF) |
| 209 | Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance | 13.7 | 90 | Citations (PDF) |
| 210 | Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer | 2.0 | 28 | Citations (PDF) |
| 211 | Electric field control of thermal stability and magnetization switching in (Ga,Mn)As | 3.0 | 22 | Citations (PDF) |
| 212 | Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field | 2.1 | 17 | Citations (PDF) |
| 213 | A strong anisotropy of spin dephasing time of quasi-one dimensional electron gas in modulation-doped GaAs/AlGaAs wires | 3.0 | 14 | Citations (PDF) |
| 214 | Detection and measurement of electroreflectance on quantum cascade laser device using Fourier transform infrared microscope | 3.0 | 4 | Citations (PDF) |
| 215 | Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure | 3.0 | 9 | Citations (PDF) |
| 216 | Size Dependence of Magnetic Properties of Nanoscale CoFeB–MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance | 2.1 | 38 | Citations (PDF) |
| 217 | CoNi Films with Perpendicular Magnetic Anisotropy Prepared by Alternate Monoatomic Layer Deposition | 2.1 | 19 | Citations (PDF) |
| 218 | Current-Induced Effective Fields Detected by Magnetotrasport Measurements | 2.1 | 41 | Citations (PDF) |
| 219 | Fabrication of a magnetic tunnel junction-based 240-tile nonvolatile field-programmable gate array chip skipping wasted write operations for greedy power-reduced logic applications | 0.4 | 22 | Citations (PDF) |
| 220 | Photocurrent Measurements on a Quantum Cascade Laser Device by Fourier Transform Infrared Microscope | 1.9 | 2 | Citations (PDF) |
| 221 | Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory | 1.9 | 21 | Citations (PDF) |
| 222 | Dependence of Magnetic Anisotropy in Co$_{20}$Fe$_{60}$B$_{20}$ Free Layers on Capping Layers in MgO-Based Magnetic Tunnel Junctions with In-Plane Easy Axis | 2.1 | 28 | Citations (PDF) |
| 223 | Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure | 1.9 | 6 | Citations (PDF) |
| 224 | Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme | 1.9 | 8 | Citations (PDF) |
| 225 | Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits | 2.0 | 2 | Citations (PDF) |
| 226 | Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions | 2.0 | 11 | Citations (PDF) |
| 227 | Material parameters and thermal stability of synthetic ferrimagnet free layers in magnetic tunnel junction nanopillars | 2.0 | 1 | Citations (PDF) |
| 228 | On the influence of nanometer-thin antiferromagnetic surface layer on ferromagnetic CrO2 | 2.0 | 5 | Citations (PDF) |
| 229 | Vertical-Electrical-Field-Induced Control of the Exciton Fine Structure Splitting in GaAs Island Quantum Dots for the Generation of Polarization-Entangled Photons | 1.9 | 1 | Citations (PDF) |
| 230 | Transmission electron microscopy study on the effect of various capping layers on CoFeB/MgO/CoFeB pseudo spin valves annealed at different temperatures | 2.0 | 54 | Citations (PDF) |
| 231 | Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions | 1.9 | 9 | Citations (PDF) |
| 232 | Electric Field Effect on Magnetization of an Fe Ultrathin Film | 2.1 | 15 | Citations (PDF) |
| 233 | High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction | 1.9 | 25 | Citations (PDF) |
| 234 | Domain wall dynamics driven by spin transfer torque and the spin–orbit field | 2.3 | 10 | Citations (PDF) |
| 235 | Current-Induced Domain Wall Motion in Perpendicularly Magnetized Co/Ni Nanowire under In-Plane Magnetic Fields | 2.1 | 28 | Citations (PDF) |
| 236 | Six-input lookup table circuit with 62% fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions | 2.0 | 51 | Citations (PDF) |
| 237 | Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory | 2.0 | 27 | Citations (PDF) |
| 238 | Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction | 3.0 | 378 | Citations (PDF) |
| 239 | Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission | 3.0 | 70 | Citations (PDF) |
| 240 | Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions | 2.0 | 31 | Citations (PDF) |
| 241 | Boron Composition Dependence of Magnetic Anisotropy and Tunnel Magnetoresistance in MgO/CoFe(B) Based Stack Structures | 1.4 | 32 | Citations (PDF) |
| 242 | Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field | 13.7 | 88 | Citations (PDF) |
| 243 | Spatial control of magnetic anisotropy for current induced domain wall injection in perpendicularly magnetized CoFeB|MgO nanostructures | 3.0 | 16 | Citations (PDF) |
| 244 | Current-induced torques in magnetic materials | 33.4 | 1,140 | Citations (PDF) |
| 245 | Observation of magnetic domain-wall dynamics transition in Co/Ni multilayered nanowires | 3.0 | 5 | Citations (PDF) |
| 246 | Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure | 3.0 | 290 | Citations (PDF) |
| 247 | Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate | 3.4 | 54 | Citations (PDF) |
| 248 | CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions | 1.1 | 108 | Citations (PDF) |
| 249 | Spin-transfer torque RAM technology: Review and prospect | 1.5 | 305 | Citations (PDF) |
| 250 | Scalability Prospect of Three-Terminal Magnetic Domain-Wall Motion Device | 1.4 | 22 | Citations (PDF) |
| 251 | Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO | 33.4 | 960 | Citations (PDF) |
| 252 | High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction | 1.9 | 18 | Citations (PDF) |
| 253 | Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme | 1.9 | 15 | Citations (PDF) |
| 254 | Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory | 1.9 | 25 | Citations (PDF) |
| 255 | Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure | 1.9 | 6 | Citations (PDF) |
| 256 | Vertical-Electrical-Field-Induced Control of the Exciton Fine Structure Splitting in GaAs Island Quantum Dots for the Generation of Polarization-Entangled Photons | 1.9 | 1 | Citations (PDF) |
| 257 | Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions | 1.9 | 16 | Citations (PDF) |
| 258 | Photocurrent Measurements on a Quantum Cascade Laser Device by Fourier Transform Infrared Microscope | 1.9 | 0 | Citations (PDF) |
| 259 | Exafs Study of (La1-XCex)2Zr207 | 0.1 | 4 | Citations (PDF) |
| 260 | Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures | 1.4 | 10 | Citations (PDF) |
| 261 | Domain Structure in CoFeB Thin Films With Perpendicular Magnetic Anisotropy | 1.1 | 148 | Citations (PDF) |
| 262 | Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions | 3.0 | 18 | Citations (PDF) |
| 263 | Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowire | 3.0 | 143 | Citations (PDF) |
| 264 | Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions | 3.0 | 157 | Citations (PDF) |
| 265 | Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers | 2.1 | 49 | Citations (PDF) |
| 266 | Highly-scalable disruptive reading and restoring scheme for Gb-scale SPRAM and beyond | 1.1 | 3 | Citations (PDF) |
| 267 | Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme | 1.9 | 14 | Citations (PDF) |
| 268 | Reduction of intrinsic critical current density under a magnetic field along the hard axis of a free layer in a magnetic tunnel junction | 3.4 | 1 | Citations (PDF) |
| 269 | Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire | 3.0 | 138 | Citations (PDF) |
| 270 | Magnetic Anisotropy Modulation in Ta/ CoFeB/ MgO Structure by Electric Fields | 0.3 | 9 | Citations (PDF) |
| 271 | Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions | 3.0 | 58 | Citations (PDF) |
| 272 | Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20-MgO structure | 2.0 | 117 | Citations (PDF) |
| 273 | Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures | 2.0 | 18 | Citations (PDF) |
| 274 | Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well | 1.9 | 1 | Citations (PDF) |
| 275 | Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well | 1.9 | 3 | Citations (PDF) |
| 276 | Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme | 1.9 | 6 | Citations (PDF) |
| 277 | Spin-transfer switching in magnetic tunnel junctions with synthetic ferri-magnetic free layer | 0.3 | 2 | Citations (PDF) |
| 278 | Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As | 3.0 | 71 | Citations (PDF) |
| 279 | Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits | 0.4 | 0 | Citations (PDF) |
| 280 | Simulation of magnetization switching by electric-field manipulation of magnetic anisotropy | 3.0 | 49 | Citations (PDF) |
| 281 | Electrically Defined Ferromagnetic Nanodots | 8.7 | 13 | Citations (PDF) |
| 282 | Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires | 2.8 | 2 | Citations (PDF) |
| 283 | Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film | 2.8 | 11 | Citations (PDF) |
| 284 | Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well | 2.8 | 3 | Citations (PDF) |
| 285 | Detection of local electron and nuclear spin dynamics by time-resolved Kerr microscopy | 2.8 | 1 | Citations (PDF) |
| 286 | Spatially homogeneous ferromagnetism of (Ga, Mn)As | 33.4 | 75 | Citations (PDF) |
| 287 | A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction | 33.4 | 3,465 | Citations (PDF) |
| 288 | Observation of the fractional quantum Hall effect in an oxide | 33.4 | 280 | Citations (PDF) |
| 289 | Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit | 0.4 | 3 | Citations (PDF) |
| 290 | Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions | 3.0 | 51 | Citations (PDF) |
| 291 | Vertical electric field tuning of the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot | 3.0 | 29 | Citations (PDF) |
| 292 | Band-tail shape and transport near the metal-insulator transition in Si-dopedAl0.3Ga0.7As | 3.4 | 10 | Citations (PDF) |
| 293 | CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio | 1.9 | 11 | Citations (PDF) |
| 294 | Domain wall creep in (Ga,Mn)As | 3.0 | 14 | Citations (PDF) |
| 295 | Fine-Grained Power-Gating Scheme of a Metal–Oxide–Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial Ternary Content-Addressable Memory | 1.9 | 18 | Citations (PDF) |
| 296 | The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal–Oxide–Semiconductor Circuits | 1.9 | 0 | Citations (PDF) |
| 297 | Curie temperature versus hole concentration in field-effect structures ofGa1−xMnxAs | 3.4 | 72 | Citations (PDF) |
| 298 | Electric double layer transistor with a (Ga,Mn)As channel | 3.0 | 41 | Citations (PDF) |
| 299 | A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference Scheme | 3.6 | 119 | Citations (PDF) |
| 300 | Magnetization dynamics of a CrO2 grain studied by micro-Hall magnetometry | 3.0 | 15 | Citations (PDF) |
| 301 | Anomalous Hall Effect in Field-Effect Structures of (Ga,Mn)As | 8.2 | 73 | Citations (PDF) |
| 302 | A nondestructive analysis of the B diffusion in Ta–CoFeB–MgO–CoFeB–Ta magnetic tunnel junctions by hard x-ray photoemission | 3.0 | 66 | Citations (PDF) |
| 303 | Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures | 3.0 | 469 | Citations (PDF) |
| 304 | Gate voltage dependence of nuclear spin relaxation in an impurity-doped semiconductor quantum well | 3.0 | 7 | Citations (PDF) |
| 305 | Intersubband exchange interaction induced by optically excited electron spins in GaAs/AlGaAs quantum wells | 3.0 | 2 | Citations (PDF) |
| 306 | MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers | 3.0 | 134 | Citations (PDF) |
| 307 | Transmission electron microscopy investigation of CoFeB/MgO/CoFeB pseudospin valves annealed at different temperatures | 2.0 | 91 | Citations (PDF) |
| 308 | Direct measurement of current-induced fieldlike torque in magnetic tunnel junctions | 2.0 | 11 | Citations (PDF) |
| 309 | ac susceptibility of (Ga,Mn)As probed by the anomalous Hall effect | 2.0 | 0 | Citations (PDF) |
| 310 | Thermally Activated Longitudinal Optical Phonon Scattering of a 3.8 THz GaAs Quantum Cascade Laser | 2.1 | 6 | Citations (PDF) |
| 311 | Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayer Electrodes and an MgO Barrier | 1.4 | 20 | Citations (PDF) |
| 312 | Asymptomatic emphysematous cholecystitis | 1.3 | 2 | Citations (PDF) |
| 313 | 3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film | 2.1 | 51 | Citations (PDF) |
| 314 | Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy | 1.9 | 18 | Citations (PDF) |
| 315 | Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy | 3.4 | 45 | Citations (PDF) |
| 316 | Title is missing! | 0.1 | 0 | Citations (PDF) |
| 317 | Scanning Kerr Microscopy of the Spin Hall Effect in n-Doped GaAs with Various Doping Concentration | 1.6 | 3 | Citations (PDF) |
| 318 | Gate Voltage Control of Nuclear Spin Relaxation in GaAs Quantum Well | 1.6 | 0 | Citations (PDF) |
| 319 | Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)As | 16.0 | 221 | Citations (PDF) |
| 320 | Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator | 2.8 | 0 | Citations (PDF) |
| 321 | Effect of vertical electric fields on exciton fine structure of GaAs natural quantum dots | 2.8 | 4 | Citations (PDF) |
| 322 | Fine structure in magnetospectrum of vertical quantum dot | 2.8 | 0 | Citations (PDF) |
| 323 | Spin-transfer physics and the model of ferromagnetism in (Ga,Mn)As | 2.7 | 26 | Citations (PDF) |
| 324 | 2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read | 3.6 | 215 | Citations (PDF) |
| 325 | Magnetization vector manipulation by electric fields | 37.9 | 633 | Citations (PDF) |
| 326 | Chapter 5 Spintronic Properties of Ferromagnetic Semiconductors | 0.0 | 3 | Citations (PDF) |
| 327 | Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature | 3.0 | 1,446 | Citations (PDF) |
| 328 | Current-Induced Magnetization Switching in MgO Barrier Magnetic Tunnel Junctions With CoFeB-Based Synthetic Ferrimagnetic Free Layers | 1.4 | 87 | Citations (PDF) |
| 329 | Mott Relation for Anomalous Hall and Nernst Effects inGa1−xMnxAsFerromagnetic Semiconductors | 8.2 | 262 | Citations (PDF) |
| 330 | Single-Shot Time-Resolved Measurements of Nanosecond-Scale Spin-Transfer Induced Switching: Stochastic Versus Deterministic Aspects | 8.2 | 234 | Citations (PDF) |
| 331 | Properties of Ga1−xMnxAs with high x (>0.1) | 2.0 | 20 | Citations (PDF) |
| 332 | 0.7 anomaly and magnetotransport of disordered quantum wires | 1.8 | 4 | Citations (PDF) |
| 333 | An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material | 2.9 | 26 | Citations (PDF) |
| 334 | Multipulse Operation and Optical Detection of Nuclear Spin Coherence in aGaAs/AlGaAsQuantum Well | 8.2 | 28 | Citations (PDF) |
| 335 | Electrical control of spin coherence in ZnO | 3.0 | 20 | Citations (PDF) |
| 336 | Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric | 3.0 | 24 | Citations (PDF) |
| 337 | Simultaneous lasing of interband and intersubband transitions in InAs∕AlSb quantum cascade laser structures | 3.0 | 4 | Citations (PDF) |
| 338 | Intersubband transitions in ZnO multiple quantum wells | 3.0 | 70 | Citations (PDF) |
| 339 | Electrical Curie temperature modulation in (Ga,Mn)As field-effect transistors with Mn composition from 0.027 to 0.200 | 2.0 | 7 | Citations (PDF) |
| 340 | Electrical time-domain observation of magnetization switching induced by spin transfer in magnetic nanostructures (invited) | 2.0 | 9 | Citations (PDF) |
| 341 | Evaluation of Characteristic Parameters of MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layers | 0.0 | 0 | Citations (PDF) |
| 342 | Room-temperature InAs∕AlSb quantum-cascade laser operating at 8.9 [micro sign]m | 0.7 | 5 | Citations (PDF) |
| 343 | Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier | 3.0 | 304 | Citations (PDF) |
| 344 | Above room-temperature operation of InAs∕AlGaSb superlattice quantum cascade lasers emitting at 12μm | 3.0 | 10 | Citations (PDF) |
| 345 | Properties of Ga1−xMnxAs with high Mn composition (x>0.1) | 3.0 | 75 | Citations (PDF) |
| 346 | (In,Ga)As gated-vertical quantum dot with an Al2O3 insulator | 3.0 | 7 | Citations (PDF) |
| 347 | Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions | 3.0 | 5 | Citations (PDF) |
| 348 | A few-electron vertical In0.56Ga0.44As quantum dot with an insulating gate | 3.0 | 3 | Citations (PDF) |
| 349 | Character of states near the Fermi level in (Ga,Mn)As: Impurity to valence band crossover | 3.4 | 144 | Citations (PDF) |
| 350 | Domain wall resistance in perpendicularly magnetized (Ga,Mn)As | 2.7 | 6 | Citations (PDF) |
| 351 | Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions | 2.7 | 19 | Citations (PDF) |
| 352 | Effect of substrate temperature on the properties of heavily Mn-doped GaAs | 1.9 | 5 | Citations (PDF) |
| 353 | 2-Mb SPRAM design: bi-directional current write and parallelizing-direction current read based on spin-transfer torque switching | 1.5 | 2 | Citations (PDF) |
| 354 | Submicrometer Hall Sensors for Superparamagnetic Nanoparticle Detection | 1.4 | 12 | Citations (PDF) |
| 355 | Magnetic Tunnel Junctions for Spintronic Memories and Beyond | 2.7 | 505 | Citations (PDF) |
| 356 | Ferromagnetic Semiconductor Heterostructures for Spintronics | 2.7 | 26 | Citations (PDF) |
| 357 | Channel Thickness Dependence of the Magnetic Properties in (Ga,Mn)As FET Structures | 1.6 | 4 | Citations (PDF) |
| 358 | Portal gas in a patient with acute obstructive cholangitis: report of a case with emphasis on US findings | 1.3 | 10 | Citations (PDF) |
| 359 | Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer | 1.9 | 133 | Citations (PDF) |
| 360 | Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As∕n+-GaAs Esaki diode | 3.0 | 42 | Citations (PDF) |
| 361 | Domain-Wall Resistance in Ferromagnetic (Ga,Mn)As | 8.2 | 65 | Citations (PDF) |
| 362 | Current-Assisted Domain Wall Motion in Ferromagnetic Semiconductors | 1.9 | 19 | Citations (PDF) |
| 363 | Spin injection with three terminal device based on (Ga,Mn)As/n+-GaAs tunnel junction | 0.7 | 5 | Citations (PDF) |
| 364 | Magnetic anisotropy in (Ga,Mn)As probed by magnetotransport measurements | 0.7 | 14 | Citations (PDF) |
| 365 | Physics and materials of spintronics in semiconductors | 0.7 | 1 | Citations (PDF) |
| 366 | Control of ZnO (000)/Al2O3 (110) surface morphologies using plasma-assisted molecular beam epitaxy | 1.5 | 11 | Citations (PDF) |
| 367 | Engineering magnetism in semiconductors | 14.0 | 73 | Citations (PDF) |
| 368 | High-throughput synthesis and characterization of Mg1−xCaxO films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors | 6.6 | 12 | Citations (PDF) |
| 369 | Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction | 2.8 | 20 | Citations (PDF) |
| 370 | Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB∕MgO∕CoFeB magnetic tunnel junctions | 3.0 | 226 | Citations (PDF) |
| 371 | Isolated splenic granuloma: report of a case with an emphasis on ultrasound findings | 1.3 | 1 | Citations (PDF) |
| 372 | Marked change in Doppler waveform: report of two cases of subcutaneous hematoma | 1.3 | 1 | Citations (PDF) |
| 373 | Portal-systemic shunt through the right renal vein developing following portal tumor thrombus | 1.3 | 3 | Citations (PDF) |
| 374 | Inflammatory pseudotumor of the spleen: report of a case with emphasis on contrast-enhanced ultrasound findings | 1.3 | 1 | Citations (PDF) |
| 375 | Isolated liver metastasis from a renal cell carcinoma 12 years after nephrectomy: report of a case and literature review | 1.3 | 0 | Citations (PDF) |
| 376 | Ferromagnetic semiconductors for spintronics | 2.7 | 9 | Citations (PDF) |
| 377 | Electrical magnetization reversal in ferromagnetic III–V semiconductors | 2.9 | 15 | Citations (PDF) |
| 378 | Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier | 1.9 | 1 | Citations (PDF) |
| 379 | Decomposition of1/fNoise inAlxGa1−xAs/GaAsHall Devices | 8.2 | 32 | Citations (PDF) |
| 380 | Single-electron switching inAlxGa1−xAs∕GaAsHall devices | 3.4 | 21 | Citations (PDF) |
| 381 | Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers | 2.0 | 54 | Citations (PDF) |
| 382 | Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy | 3.0 | 46 | Citations (PDF) |
| 383 | Optical Pump-Probe Measurements of Local Nuclear Spin Coherence in Semiconductor Quantum Wells | 8.2 | 49 | Citations (PDF) |
| 384 | Giant tunnel magnetoresistance and high annealing stability in CoFeB∕MgO∕CoFeB magnetic tunnel junctions with synthetic pinned layer | 3.0 | 160 | Citations (PDF) |
| 385 | Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction | 2.0 | 8 | Citations (PDF) |
| 386 | Velocity of Domain-Wall Motion Induced by Electrical Current in the Ferromagnetic Semiconductor (Ga,Mn)As | 8.2 | 223 | Citations (PDF) |
| 387 | Electric-field control of ferromagnetism in (Ga,Mn)As | 3.0 | 150 | Citations (PDF) |
| 388 | Applicability of subpicosecond pulse lasers to determining thermal diffusivity of metals | 4.7 | 0 | Citations (PDF) |
| 389 | Low-frequency noise in submicron GaAs/AlxGa1−xAs Hall devices | 2.7 | 1 | Citations (PDF) |
| 390 | Fabrication of Ternary Phase Composition-Spread Thin Film Libraries and Their High-Throughput Characterization: Ti1?x?yZrxHfyO2 for Bandgap Engineering | 0.0 | 12 | Citations (PDF) |
| 391 | InAs Quantum Cascade Lasers Based on Coupled Quantum Well Structures | 1.9 | 0 | Citations (PDF) |
| 392 | High-Mobility Field-Effect Transistors Based on Single-Crystalline ZnO Channels | 1.9 | 57 | Citations (PDF) |
| 393 | Current-driven magnetization reversal in exchange-biased spin-valve nanopillars | 2.0 | 8 | Citations (PDF) |
| 394 | Spin precession of holes in wurtzite GaN studied using the time-resolved Kerr rotation technique | 3.4 | 18 | Citations (PDF) |
| 395 | Mid-infrared InAs∕AlGaSb superlattice quantum-cascade lasers | 3.0 | 17 | Citations (PDF) |
| 396 | Magnetization reversal in elongated Fe nanoparticles | 3.4 | 19 | Citations (PDF) |
| 397 | Gate Control of Dynamic Nuclear Polarization in GaAs Quantum Wells | 8.2 | 23 | Citations (PDF) |
| 398 | Strong anisotropic spin dynamics in narrow n-InGaAs∕AlGaAs (110) quantum wells | 3.0 | 21 | Citations (PDF) |
| 399 | Blue Light-Emitting Diode Based on ZnO | 1.9 | 417 | Citations (PDF) |
| 400 | Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering | 1.9 | 106 | Citations (PDF) |
| 401 | Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature | 1.9 | 256 | Citations (PDF) |
| 402 | Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions | 1.9 | 193 | Citations (PDF) |
| 403 | Detection of single magnetic bead for biological applications using an InAs quantum-well micro-Hall sensor | 3.0 | 71 | Citations (PDF) |
| 404 | Effect of GaAs Intermediary Layer Thickness on the Properties of (Ga,Mn)As Tri-Layer Structures | 0.0 | 5 | Citations (PDF) |
| 405 | Control of magnetization reversal in ferromagnetic semiconductors by electrical means | 2.3 | 7 | Citations (PDF) |
| 406 | Current-driven switching of exchange biased spin-valve giant magnetoresistive nanopillars using a conducting nanoprobe | 2.0 | 9 | Citations (PDF) |
| 407 | A Low Threshold Current Density InAs/AlGaSb Superlattice Quantum Cascade Laser Operating at 14 µm | 1.9 | 20 | Citations (PDF) |
| 408 | Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO | 33.4 | 2,012 | Citations (PDF) |
| 409 | Current-induced domain-wall switching in a ferromagnetic semiconductor structure | 37.9 | 674 | Citations (PDF) |
| 410 | Molecular Beam Epitaxy and Properties of Cr-Doped GaSb | 0.0 | 12 | Citations (PDF) |
| 411 | Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier | 2.8 | 124 | Citations (PDF) |
| 412 | Electrical properties of the patterned Co/Cu/Co sub-micron dots using a probe contact | 2.7 | 0 | Citations (PDF) |
| 413 | Hall and Field-Effect Mobilities of Electrons Accumulated at a Lattice-Matched ZnO/ScAlMgO4 Heterointerface | 24.5 | 39 | Citations (PDF) |
| 414 | Ferromagnetic semiconductor heterostructures | 2.7 | 15 | Citations (PDF) |
| 415 | Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors | 2.8 | 73 | Citations (PDF) |
| 416 | Electron spin dynamics in InGaAs quantum wells | 2.8 | 10 | Citations (PDF) |
| 417 | Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain | 2.8 | 124 | Citations (PDF) |
| 418 | Modulation of Noise in SubmicronGaAs/AlGaAsHall Devices by Gating | 8.2 | 38 | Citations (PDF) |
| 419 | Current-Driven Magnetization Reversal in a Ferromagnetic Semiconductor(Ga,Mn)As/GaAs/(Ga,Mn)AsTunnel Junction | 8.2 | 141 | Citations (PDF) |
| 420 | Title is missing! | 0.0 | 6 | Citations (PDF) |
| 421 | Title is missing! | 0.0 | 12 | Citations (PDF) |
| 422 | Title is missing! | 0.0 | 2 | Citations (PDF) |
| 423 | Molecular beam epitaxy and properties of ferromagnetic III–V semiconductors | 1.9 | 32 | Citations (PDF) |
| 424 | InAs-based quantum cascade light emitting structures containing a double plasmon waveguide | 1.9 | 8 | Citations (PDF) |
| 425 | Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism | 4.5 | 25 | Citations (PDF) |
| 426 | Spin degree of freedom in ferromagnetic semiconductor heterostructures | 2.8 | 6 | Citations (PDF) |
| 427 | Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures | 3.0 | 12 | Citations (PDF) |
| 428 | InAs/AlSb quantum cascade lasers operating at 10 μm | 3.0 | 61 | Citations (PDF) |
| 429 | Ferromagnetic III–V and II–VI Semiconductors | 4.1 | 105 | Citations (PDF) |
| 430 | Magnetization reversal of iron nanoparticles studied by submicron Hall magnetometry | 2.0 | 8 | Citations (PDF) |
| 431 | Modeling and simulation of polycrystalline ZnO thin-film transistors | 2.0 | 303 | Citations (PDF) |
| 432 | High Mobility Thin Film Transistors with Transparent ZnO Channels | 1.9 | 273 | Citations (PDF) |
| 433 | Effect of low-temperature annealing on (Ga,Mn)As trilayer structures | 3.0 | 221 | Citations (PDF) |
| 434 | Hysteretic dynamic nuclear polarization inGaAs/AlxGa1−xAs(110) quantum wells | 3.4 | 17 | Citations (PDF) |
| 435 | Hall magnetometry on a single iron nanoparticle | 3.0 | 69 | Citations (PDF) |
| 436 | Relaxation of photoinjected spins during drift transport in GaAs | 3.0 | 58 | Citations (PDF) |
| 437 | Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures | 3.0 | 56 | Citations (PDF) |
| 438 | Local electronic structures of GaMnAs observed by cross-sectional scanning tunneling microscopy | 3.0 | 28 | Citations (PDF) |
| 439 | An InAs-Based Intersubband Quantum Cascade Laser | 1.9 | 38 | Citations (PDF) |
| 440 | Ferromagnetism of magnetic semiconductors: Zhang-Rice limit | 3.4 | 86 | Citations (PDF) |
| 441 | Control of ferromagnetism in field-effect transistor of a magnetic semiconductor | 2.8 | 33 | Citations (PDF) |
| 442 | Valence band barrier at (Ga,Mn)As/GaAs interfaces | 2.8 | 33 | Citations (PDF) |
| 443 | Ferromagnetic semiconductors for spin electronics | 2.7 | 13 | Citations (PDF) |
| 444 | Microscopic identification of dopant atoms in Mn-doped GaAs layers | 2.3 | 20 | Citations (PDF) |
| 445 | Growth and properties of (Ga,Mn)As on Si (100) substrate | 1.9 | 13 | Citations (PDF) |
| 446 | Semiconductor spintronics | 2.1 | 118 | Citations (PDF) |
| 447 | Magnetic properties of (Al,Ga,Mn)As | 3.0 | 57 | Citations (PDF) |
| 448 | Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors | 3.4 | 1,468 | Citations (PDF) |
| 449 | High-energy X-ray diffraction studies of non-crystalline materials | 3.3 | 26 | Citations (PDF) |
| 450 | Fluorescence extended x-ray absorption fine structure study on local structures around Mn atoms in thin (In, Mn)As layer and (In, Mn)As quantum dots | 2.0 | 27 | Citations (PDF) |
| 451 | Growth and properties of (Ga,Mn)As films with high Mn concentration | 2.0 | 27 | Citations (PDF) |
| 452 | A ferromagnetic III–V semiconductor: (Ga,Mn)As | 2.3 | 182 | Citations (PDF) |
| 453 | Spin-dependent phenomena in ferromagnetic/nonmagnetic III–V heterostructures | 2.3 | 36 | Citations (PDF) |
| 454 | Spin-dependent properties of ferromagnetic/nonmagnetic GaAs heterostructures | 4.2 | 12 | Citations (PDF) |
| 455 | Ferromagnetism in III–V and II–VI semiconductor structures | 2.8 | 67 | Citations (PDF) |
| 456 | Spin relaxation in n-modulation doped GaAs/AlGaAs quantum wells | 2.8 | 52 | Citations (PDF) |
| 457 | Magnetic domain structure of a ferromagnetic semiconductor (Ga,Mn)As observed with scanning probe microscopes | 2.8 | 27 | Citations (PDF) |
| 458 | Magnetotransport properties of (Ga,Mn)As grown on GaAs A substrates | 2.8 | 27 | Citations (PDF) |
| 459 | Magnetic circular dichroism in Mn 2p core absorption of Ga1−xMnxAs | 2.8 | 26 | Citations (PDF) |
| 460 | Properties of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures | 2.8 | 5 | Citations (PDF) |
| 461 | Temperature dependence of electroluminescence and I–V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions | 2.8 | 16 | Citations (PDF) |
| 462 | Electrical spin injection in ferromagnetic/nonmagnetic semiconductor heterostructures | 2.8 | 44 | Citations (PDF) |
| 463 | Effect of barrier width on the performance of quantum well infrared photodetector | 3.2 | 9 | Citations (PDF) |
| 464 | Dual-band photodetectors based on interband and intersubband transitions | 3.2 | 13 | Citations (PDF) |
| 465 | A Spin Esaki Diode | 1.9 | 130 | Citations (PDF) |
| 466 | Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells | 3.4 | 96 | Citations (PDF) |
| 467 | Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy | 3.0 | 207 | Citations (PDF) |
| 468 | Optical Manipulation of Nuclear Spin by a Two-Dimensional Electron Gas | 8.2 | 142 | Citations (PDF) |
| 469 | Emission wavelength control by potential notch in type-II InAs/GaSb/AlSb intersubband light-emitting structures | 3.0 | 1 | Citations (PDF) |
| 470 | Surfactant effect of Mn on the formation of self-organized InAs nanostructures | 1.9 | 18 | Citations (PDF) |
| 471 | Magnetic domain structures of (Ga,Mn)As investigated by scanning Hall probe microscopy | 2.7 | 1 | Citations (PDF) |
| 472 | Ferromagnetism induced by free carriers in p-type structures of diluted magnetic semiconductors | 2.8 | 19 | Citations (PDF) |
| 473 | Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field | 2.8 | 120 | Citations (PDF) |
| 474 | Molecular beam epitaxy of III–V diluted magnetic semiconductor (Ga,Mn)Sb | 2.8 | 79 | Citations (PDF) |
| 475 | Mobility dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple quantum wells | 2.8 | 11 | Citations (PDF) |
| 476 | Bilayer ν=2 quantum Hall state in parallel high magnetic field | 2.8 | 0 | Citations (PDF) |
| 477 | Ferromagnetism and heterostructures of III–V magnetic semiconductors | 2.8 | 17 | Citations (PDF) |
| 478 | Electron spin relaxation beyond D'yakonov–Perel’ interaction in GaAs/AlGaAs quantum wells | 2.8 | 38 | Citations (PDF) |
| 479 | Mid-infrared intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structures | 2.8 | 5 | Citations (PDF) |
| 480 | MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn)As | 6.6 | 21 | Citations (PDF) |
| 481 | Molecular beam epitaxy of GaSb with high concentration of Mn | 6.6 | 17 | Citations (PDF) |
| 482 | Surface morphologies of III-V based magnetic semiconductor (Ga,Mn)As grown by molecular beam epitaxy | 6.6 | 5 | Citations (PDF) |
| 483 | Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surface | 6.6 | 14 | Citations (PDF) |
| 484 | Electric-field control of ferromagnetism | 37.9 | 1,998 | Citations (PDF) |
| 485 | Influence of interface bonds and buffer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrates | 6.6 | 3 | Citations (PDF) |
| 486 | Ferromagnetic III–V heterostructures | 1.5 | 45 | Citations (PDF) |
| 487 | Magnetic moment of Mn in the ferromagnetic semiconductor (Ga0.98Mn0.02)As | 3.0 | 85 | Citations (PDF) |
| 488 | Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time | 3.0 | 44 | Citations (PDF) |
| 489 | Observation of magnetic domain structure in a ferromagnetic semiconductor (Ga, Mn)As with a scanning Hall probe microscope | 3.0 | 75 | Citations (PDF) |
| 490 | Magnetotransport properties of (Ga, Mn)Sb | 2.0 | 83 | Citations (PDF) |
| 491 | Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures | 3.0 | 145 | Citations (PDF) |
| 492 | Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures | 2.0 | 22 | Citations (PDF) |
| 493 | Interlayer coherence inν=1andν=2bilayer quantum Hall states | 3.4 | 36 | Citations (PDF) |
| 494 | Integrated micromechanical cantilever magnetometry of Ga1−xMnxAs | 3.0 | 59 | Citations (PDF) |
| 495 | Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In,Mn)As/(Ga,Al)Sb | 3.4 | 83 | Citations (PDF) |
| 496 | Intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structures | 3.0 | 21 | Citations (PDF) |
| 497 | Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors | 4.2 | 65 | Citations (PDF) |
| 498 | Electrical spin injection in a ferromagnetic semiconductor heterostructure | 37.9 | 2,404 | Citations (PDF) |
| 499 | InAs and (In,Mn)As nanostructures grown on GaAs(100), (211)B, and (311)B substrates | 1.9 | 9 | Citations (PDF) |
| 500 | Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As | 1.9 | 39 | Citations (PDF) |
| 501 | X-ray diffraction study of InAs/AlSb interface bonds grown by molecular beam epitaxy | 1.9 | 4 | Citations (PDF) |
| 502 | Properties of ferromagnetic III–V semiconductors | 2.7 | 809 | Citations (PDF) |
| 503 | MOCVD Growth and Transport Investigation of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures on Sapphire Substrates | 1.5 | 1 | Citations (PDF) |
| 504 | Magnetic Circular Dichroism Studies of Carrier-Induced Ferromagnetism in(Ga1−xMnx)As | 8.2 | 262 | Citations (PDF) |
| 505 | Monte Carlo simulation of reentrant reflection high-energy electron diffraction intensity oscillation observed during low-temperature GaAs growth | 3.0 | 13 | Citations (PDF) |
| 506 | Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As (invited) | 2.0 | 80 | Citations (PDF) |
| 507 | Antiferromagneticp−dexchange in ferromagneticGa1−xMnxAsepilayers | 3.4 | 149 | Citations (PDF) |
| 508 | Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate | 3.0 | 68 | Citations (PDF) |
| 509 | Spin Relaxation in GaAs(110) Quantum Wells | 8.2 | 404 | Citations (PDF) |
| 510 | A Reverse Monte Carlo Study of Lead Metasilicate Glass | 1.9 | 10 | Citations (PDF) |
| 511 | High-pressure X-ray diffraction study on the structure of NaCl melt using synchrotron radiation | 1.8 | 8 | Citations (PDF) |
| 512 | The Reverse Monte Carlo Studies of Molten Alkali
Carbonates | 0.2 | 0 | Citations (PDF) |
| 513 | Title is missing! | 3.4 | 8 | Citations (PDF) |
| 514 | Making Nonmagnetic Semiconductors Ferromagnetic 1998, 281, 951-956 | | 4,645 | Citations (PDF) |
| 515 | Transport properties and origin of ferromagnetism in (Ga,Mn)As | 3.4 | 1,032 | Citations (PDF) |
| 516 | Strongly Anisotropic Hopping Conduction in (Ga, Mn)As/GaAs | 1.5 | 32 | Citations (PDF) |
| 517 | Giant Negative Magnetoresistance of (Ga,Mn)As/GaAs in the Vicinity of a Metal-Insulator Transition | 1.5 | 16 | Citations (PDF) |
| 518 | ν=1 bilayer quantum Hall state at arbitrary electron distribution in a double quantum well | 1.1 | 0 | Citations (PDF) |
| 519 | Etched-backgate field-effect transistor structure for magnetotunneling study of low-dimensional electron systems | 1.1 | 0 | Citations (PDF) |
| 520 | Well-width dependence of bound to quasi-bound intersubband transition in GaAs quantum wells with multi-quantum barriers | 2.8 | 2 | Citations (PDF) |
| 521 | InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates | 2.8 | 18 | Citations (PDF) |
| 522 | Ferromagnetic (Ga,Mn)As and its heterostructures | 2.8 | 12 | Citations (PDF) |
| 523 | Low-temperature conduction and giant negative magnetoresistance in III–V-based diluted magnetic semiconductor:(Ga,Mn)As/GaAs | 2.7 | 23 | Citations (PDF) |
| 524 | Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As | 2.7 | 11 | Citations (PDF) |
| 525 | Interlayer quantum coherence and anomalous stability of ν=1 bilayer quantum Hall state | 2.7 | 2 | Citations (PDF) |
| 526 | Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga,Mn)As | 2.7 | 10 | Citations (PDF) |
| 527 | Magnetotransport properties of all semiconductor (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As tri-layer structures | 2.7 | 2 | Citations (PDF) |
| 528 | ESR study of Mn doped II–VI and III–V DMS | 2.7 | 9 | Citations (PDF) |
| 529 | Cyclotron resonance in Cd1–Fe S and Ga1–Mn As at megagauss magnetic fields | 2.7 | 9 | Citations (PDF) |
| 530 | Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime | 2.7 | 0 | Citations (PDF) |
| 531 | Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study | 6.6 | 12 | Citations (PDF) |
| 532 | Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates | 6.6 | 13 | Citations (PDF) |
| 533 | Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy | 3.0 | 148 | Citations (PDF) |
| 534 | Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures | 3.0 | 53 | Citations (PDF) |
| 535 | Faraday rotation of ferromagnetic (Ga, Mn)As | 0.7 | 38 | Citations (PDF) |
| 536 | Phase Transition in theν=2Bilayer Quantum Hall State | 8.2 | 106 | Citations (PDF) |
| 537 | Light emission spectra of AlGaAs/GaAs multiquantum wells induced by scanning tunneling microscope | 3.0 | 41 | Citations (PDF) |
| 538 | Photoluminescence Study of InAs Quantum Dots and Quantum Dashes Grown on GaAs(211)B | 1.9 | 32 | Citations (PDF) |
| 539 | Magnetotransport and Magnetic Properties of (Ga,Mn)As and its Heterostructures | 0.4 | 1 | Citations (PDF) |
| 540 | (Ga, Mn)As/GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam Epitaxy | 1.9 | 49 | Citations (PDF) |
| 541 | Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure | 3.0 | 37 | Citations (PDF) |
| 542 | Nanostructural Formation of Self-Assembled Monolayer Films on Cleaved AlGaAs/GaAs Heterojuctions | 0.0 | 6 | Citations (PDF) |
| 543 | On sensor image compression | 9.2 | 32 | Citations (PDF) |
| 544 | InAs self-organized quantum dashes grown on GaAs (211)B | 3.0 | 43 | Citations (PDF) |
| 545 | Epitaxy and properties of diluted magnetic III–V semiconductor heterostructures | 6.6 | 19 | Citations (PDF) |
| 546 | Intermediate-range order in lead metasilicate glass | 1.2 | 18 | Citations (PDF) |
| 547 | Phase identification and electrical conductivity of Li2WO4 | 3.1 | 12 | Citations (PDF) |
| 548 | Growth and properties of (Ga, Mn) As: A new III–V diluted magnetic semiconductor | 6.6 | 26 | Citations (PDF) |
| 549 | Electric field dependence of intersubband transitions in single quantum wells | 6.6 | 7 | Citations (PDF) |
| 550 | Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAs | 2.3 | 152 | Citations (PDF) |
| 551 | Anomalous stability of ν = 1 bilayer quantum Hall state | 2.3 | 12 | Citations (PDF) |
| 552 | Application of synchrotron radiation to analysis of local structures in energy-related materials | 2.9 | 3 | Citations (PDF) |
| 553 | Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs | 1.9 | 188 | Citations (PDF) |
| 554 | Preparation and properties of III-V based new diluted magnetic semiconductors | 17.5 | 4 | Citations (PDF) |
| 555 | Preparation and properties of III-V based new diluted magnetic semiconductors | 17.5 | 0 | Citations (PDF) |
| 556 | Structural and doping properties of molecular beam epitaxy-grown Si-doped GaAs(001) surfaces | 1.7 | 2 | Citations (PDF) |
| 557 | (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs | 3.0 | 2,276 | Citations (PDF) |
| 558 | EXAFS study of (La1−xMx)2Zr2O7 (MNd and Ce) | 2.9 | 17 | Citations (PDF) |
| 559 | Pressure-induced structure change of molten KCl | 1.0 | 8 | Citations (PDF) |
| 560 | Growth of GaAs by molecular-beam epitaxy using trisdimethylaminoarsine | 1.9 | 1 | Citations (PDF) |
| 561 | Present status of the SPring-8 project | 1.2 | 0 | Citations (PDF) |
| 562 | Synchrotron radiation time gate quartz device for nuclear resonant scattering | 1.5 | 0 | Citations (PDF) |
| 563 | Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium | 6.6 | 3 | Citations (PDF) |
| 564 | Adsorption of carbon-related species onto GaAs(001), (011), and (111) surfaces exposed to trimethylgallium | 1.9 | 1 | Citations (PDF) |
| 565 | Influence of hydrogen radicals on the reduction of carbon incorporation into chemical beam epitaxial GaAs | 1.9 | 7 | Citations (PDF) |
| 566 | Effect of gamma-ray irradiation on in-situ electrical conductivity of ZrO2-10 mol% Gd2O3 single crystal at elevated temperatures | 2.9 | 8 | Citations (PDF) |
| 567 | In situ Auger electron spectroscopy of carbon transient behavior on GaAs surfaces exposed to trimethylgallium | 1.9 | 7 | Citations (PDF) |
| 568 | Ion-driven permeation and surface recombination coefficient of deuterium for ion | 2.9 | 10 | Citations (PDF) |
| 569 | Crystal Structure of Metastable Tetragonal Zirconia by Neutron Powder Diffraction Study | 3.7 | 52 | Citations (PDF) |
| 570 | Steady‐state hydrogen transport in a metal membrane exposed to hydrogen gas and/or a hydrogen ion beam: Reexamination of transport regime and synergistic effects | 1.8 | 7 | Citations (PDF) |
| 571 | Auger electron spectroscopy of molecular beam epitaxially grown GaAs surfaces exposed to trimethylgallium | 3.0 | 3 | Citations (PDF) |
| 572 | Short range structure of B2O3–Cs2O glasses analyzed by x‐ray diffraction and Raman spectroscopy | 2.8 | 18 | Citations (PDF) |
| 573 | Diluted Magnetic III–V Semiconductors and Its Transport Properties | 1.9 | 1 | Citations (PDF) |
| 574 | High perfection α‐57Fe2O3 crystals for nuclear Bragg scattering | 1.5 | 6 | Citations (PDF) |
| 575 | Ion‐driven permeation and surface recombination coefficient of deuterium for copper | 1.8 | 10 | Citations (PDF) |
| 576 | Optoelectronic devices based on type II polytype tunnel heterostructures | 3.0 | 36 | Citations (PDF) |
| 577 | Tamm states in superlattices | 1.7 | 49 | Citations (PDF) |
| 578 | Electrical Properties of Cubic, Stabilized, Single ZrO2-Gd2O3 Crystals | 3.7 | 21 | Citations (PDF) |
| 579 | Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductors | 8.2 | 1,055 | Citations (PDF) |
| 580 | Ion-driven permeation and surface recombination coefficients of deuterium for silver | 2.9 | 1 | Citations (PDF) |
| 581 | Resonant interband tunneling via Landau levels in polytype heterostructures | 3.4 | 59 | Citations (PDF) |
| 582 | P-Type diluted magnetic III–V semiconductors | 1.9 | 63 | Citations (PDF) |
| 583 | New diluted magnetic semiconductors based on III–V compounds | 2.7 | 64 | Citations (PDF) |
| 584 | Temperature Dependence of the Raman Spectrum in Lithium Oxide Single Crystal | 3.7 | 21 | Citations (PDF) |
| 585 | New III‐V diluted magnetic semiconductors (invited) | 2.0 | 148 | Citations (PDF) |
| 586 | High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-57Fe2O3Crystal | 1.9 | 19 | Citations (PDF) |
| 587 | Grain-Size Dependence of Thermal-Shock Resistance of Yttria-Doped Tetragonal Zirconia Polycrystals | 3.7 | 17 | Citations (PDF) |
| 588 | Investigation of Lithium Diffusion in Octalithium Plumbate by Conductivity and NMR Measurements | 3.7 | 12 | Citations (PDF) |
| 589 | Heteroepitaxial growth of LiNbO3 single crystal films by ion plating method | 1.9 | 41 | Citations (PDF) |
| 590 | Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces of compound semiconductors | 6.6 | 14 | Citations (PDF) |
| 591 | A computer simulation of the recombination process at compound semiconductor surfaces and hetero-interfaces | 6.6 | 17 | Citations (PDF) |
| 592 | X-ray photo-electron spectroscopy analysis of InP insulator-semiconductor structures prepared by anodic oxidation | 6.6 | 14 | Citations (PDF) |
| 593 | Epitaxy of III–V diluted magnetic semiconductor materials | 1.5 | 57 | Citations (PDF) |
| 594 | Observation of ‘‘Tamm states’’ in superlattices | 8.2 | 180 | Citations (PDF) |
| 595 | Midgap states in metalorganic vapor phase epitaxy grown AlxGa1−xAs | 2.0 | 15 | Citations (PDF) |
| 596 | Interactions between extended and localized states in superlattices | 3.4 | 43 | Citations (PDF) |
| 597 | Effects of carrier mass differences on the current‐voltage characteristics of resonant tunneling structures | 3.0 | 34 | Citations (PDF) |
| 598 | Nuclear Spin Relaxation in Molten LiBeF 3 | 1.9 | 0 | Citations (PDF) |
| 599 | Carrier concentration in selectively doped n-AlGaAs/GaAs single heterojunctions | 1.7 | 1 | Citations (PDF) |
| 600 | Low‐temperature mobility of two‐dimensional electron gas in selectively doped pseudomorphicN‐AlGaAs/GaInAs/GaAs structures | 3.0 | 25 | Citations (PDF) |
| 601 | Quantum Hall effect of two‐dimensional electron gas in AlyGa1−yAs/Ga1−xInxAs/GaAs pseudomorphic structures | 2.0 | 3 | Citations (PDF) |
| 602 | Magnetoconductivity of a two-dimensional electron gas inAl0.3Ga0.7As/Ga1−xINxAs/GaAs pseudomorphic heterostructures in the quantum Hall regime | 3.4 | 3 | Citations (PDF) |
| 603 | Atomic layer epitaxy of GaAs using triethylgallium and arsine | 3.0 | 35 | Citations (PDF) |
| 604 | Self‐limiting deposition of Ga on a GaAs surface by thermal decomposition of diethylgalliumchloride observed by x‐ray photoelectron spectroscopy | 3.0 | 14 | Citations (PDF) |
| 605 | Effect of exposure to group III alkyls on compound semiconductor surfaces observed by x-ray photoelectron spectroscopy | 1.9 | 32 | Citations (PDF) |
| 606 | Diluted magnetic III-V semiconductors | 8.2 | 1,054 | Citations (PDF) |
| 607 | A study of tritium behavior in lithium oxide by ion conductivity measurements | 1.8 | 21 | Citations (PDF) |
| 608 | Hydrogenated amorphous carbon films deposited by low‐frequency plasma chemical vapor deposition at room temperature | 2.0 | 13 | Citations (PDF) |
| 609 | Charge-discharge dynamics of disorder induced gap state continuum at compound semiconductor-insulator interfaces | 6.6 | 7 | Citations (PDF) |
| 610 | Growth of GaAs, InAs, and GaAs/InAs superlattice structures at low substrate temperature by MOVPE | 1.9 | 25 | Citations (PDF) |
| 611 | Conductivity measurement and effect of impurity ions dissolved in Li2O | 2.9 | 7 | Citations (PDF) |
| 612 | Characterization of GaAs regrowth interfaces grown by metal-organic vapor phase epitaxy | 0.1 | 0 | Citations (PDF) |
| 613 | Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments | 1.9 | 32 | Citations (PDF) |
| 614 | GaAs and In0.53Ga0.47As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE | 1.9 | 83 | Citations (PDF) |
| 615 | X-ray diffraction study of molten eutectic LiF–NaF–KF mixture | 1.0 | 27 | Citations (PDF) |
| 616 | A self‐consistent computer simulation of compound semiconductor metal‐insulator‐semiconductorC‐Vcurves based on the disorder‐induced gap‐state model | 2.0 | 70 | Citations (PDF) |
| 617 | Molecular-beam epitaxy growth of GaAs/InAs structures on (001)InP by alternating III/V fluxes | 1.5 | 9 | Citations (PDF) |
| 618 | Control of Fermi level pinning and recombination processes at GaAs surfaces by chemical and photochemical treatments | 1.5 | 86 | Citations (PDF) |
| 619 | Anodic Oxidation of Hydrogenated Amorphous Silicon and Properties of Oxide | 3.1 | 33 | Citations (PDF) |
| 620 | Electronic Properties and Modeling of Lattice-Mismatched and Regrown GaAs Interfaces Prepared by Metalorganic Vapor Phase Epitaxy | 1.9 | 86 | Citations (PDF) |
| 621 | Low Field Transport Properties of Two-Dimensional Electron Gas in Selectively Doped N-AlGaAs/GaInAs/GaAs Pseudomorphic Structures | 1.9 | 23 | Citations (PDF) |
| 622 | Trimethylgallium Supply without the Use of Bubbling in GaAs Growth by Metalorganic Vapor Phase Epitaxy | 1.9 | 0 | Citations (PDF) |
| 623 | Anodic Oxidation for Enhancement of Fabrication Yield and Efficiency of Amorphous Silicon Solar Cells | 3.1 | 6 | Citations (PDF) |
| 624 | Dark Current in Selectively Doped N-AlGaAs/GaAs CCDs | 1.9 | 1 | Citations (PDF) |
| 625 | A Computer Analysis of Effects of Annealing on InP Insulator-Semiconductor Interface Properties Using MIS C-V Curves | 1.9 | 27 | Citations (PDF) |
| 626 | Electronic Properties of a Photochemical Oxide-GaAs Interface | 1.9 | 21 | Citations (PDF) |
| 627 | Electronic and microstructural properties of disorder-induced gap states at compound semiconductor–insulator interfaces | 1.5 | 113 | Citations (PDF) |
| 628 | Effect of a coincident Pb flux during mbe growth on the electrical properties of GaAs and AlGaAs layers | 1.9 | 1 | Citations (PDF) |
| 629 | Nuclear magnetic resonance investigation of lithium diffusion in Li5AlO4 | 1.1 | 5 | Citations (PDF) |
| 630 | Structural analysis of AlCl3–n-butylpyridinium chloride electrolytes by X-ray diffraction | 1.1 | 19 | Citations (PDF) |
| 631 | Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces | 1.5 | 480 | Citations (PDF) |
| 632 | Reflection electron diffraction intensity oscillation during molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductor | 1.7 | 1 | Citations (PDF) |
| 633 | X-ray Diffraction Analysis of Some Molten Salts with
Low Melting Point | 0.2 | 0 | Citations (PDF) |
| 634 | Temperature limitation of partially stabilized zirconia for the application of electrical insulators | 2.9 | 3 | Citations (PDF) |
| 635 | A Common Energy Reference for DX Centers and EL2 Levels in III-V Compound Semiconductors | 1.9 | 15 | Citations (PDF) |
| 636 | Hybrid Orbital Energy for Heterojunction Band Lineup | 1.9 | 23 | Citations (PDF) |
| 637 | Correlation between the Location of the Interface State Minimum at Insulator-Semiconductor Interfaces and Schottky Barrier Heights | 1.9 | 4 | Citations (PDF) |
| 638 | X‐ray diffraction analysis of molten AlCl3–NaCl system | 2.8 | 24 | Citations (PDF) |
| 639 | X-RAY STRUCTURAL ANALYSIS OF MOLTEN LiF–KF EQUIMOLAR MIXTURE | 1.1 | 3 | Citations (PDF) |
| 640 | Electrical conductivity of a sintered pellet of octalithium zirconate | 2.9 | 15 | Citations (PDF) |
| 641 | Room temperature deposition of silicon nitride films using very low frequency (50Hz) plasma CVD | 2.3 | 22 | Citations (PDF) |
| 642 | VIA-6 Comparison of side-gating behavior between InP MISFET's and GaAs MESFET's | 2.7 | 1 | Citations (PDF) |
| 643 | Deep level characterization of AlGaAs and selectively doped N-AlGaAs/GaAs heterojunctions | 1.5 | 18 | Citations (PDF) |
| 644 | Hydrogenated amorphous silicon position sensitive detector | 2.0 | 48 | Citations (PDF) |
| 645 | Nuclear spin relaxation in Li2BeF4 | 2.8 | 3 | Citations (PDF) |
| 646 | Growth of a (GaAs)n/(InAs)nSuperlattice Semiconductor by Molecular Beam Epitaxy | 1.9 | 21 | Citations (PDF) |
| 647 | Structural analysis of the molten salt 50 mol% AlCl3–50 mol% NaCl by X-ray diffraction | 1.1 | 9 | Citations (PDF) |
| 648 | X-ray diffraction of the molten salt 50 mol% AlCl3–50 mol% LiCl | 1.1 | 10 | Citations (PDF) |
| 649 | Characteristic Diffusion Phenomena of Fluorine in
Molten LiF-BeF2 and NaF-BeF2 Systems | 0.2 | 5 | Citations (PDF) |
| 650 | Monolithic Integration of GaAs Photoconductive Detectors and MESFETs with Distributed Coupling to Optical Fibers | 1.9 | 10 | Citations (PDF) |
| 651 | Deep Electron Traps in Undoped GaAs Grown by MOCVD | 1.9 | 16 | Citations (PDF) |
| 652 | Free Carrier Profile Synthesis in MOCVD Grown GaAs by `Atomic-Plane' Doping | 1.9 | 9 | Citations (PDF) |
| 653 | Mechanism of High Gain in GaAs Photoconductive Detectors under Low Excitation | 1.9 | 22 | Citations (PDF) |
| 654 | Planar doping by interrupted MOVPE growth of GaAs | 1.9 | 21 | Citations (PDF) |
| 655 | Non-destructive characterization of electrical uniformity in semi-insulating GaAs substrates by microwave photoconductance technique | 2.3 | 10 | Citations (PDF) |
| 656 | InP MISFET's with Al2O3/Native Oxide double-layer gate insulators | 2.7 | 34 | Citations (PDF) |
| 657 | An improved version of the generalized correlation of critical heat flux for the forced convective boiling in uniformly heated vertical tubes | 5.5 | 332 | Citations (PDF) |
| 658 | Effect of tangential magnetic field on the two-dimensional electron transport in NAlGaAs/GaAs superlattices and hetero-interfaces | 0.7 | 1 | Citations (PDF) |
| 659 | Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator | 1.9 | 9 | Citations (PDF) |
| 660 | Conductivities of a sintered pellet and a single crystal of Li2O | 2.9 | 31 | Citations (PDF) |
| 661 | Structural analysis of molten Cs2So4 | 1.0 | 2 | Citations (PDF) |
| 662 | Nuclear magnetic resonance investigations of lithium diffusion in Li2O, Li2SiO3 and LiAlO2 | 1.1 | 32 | Citations (PDF) |
| 663 | X-ray diffraction analysis of molten potassium bromide | 1.1 | 11 | Citations (PDF) |
| 664 | Influence of Substrate Temperature on the Growth of AlGaAs/GaAs Quantum Well Heterostructures by Organometallic Vapor Phase Epitaxy | 1.9 | 8 | Citations (PDF) |
| 665 | Dependence of electron mobility on spacer thickness and electron density in modulation-doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions | 0.7 | 11 | Citations (PDF) |
| 666 | Magnetophonon Resonance in a Two-Dimensional Electron System in the GaAs–AlxGa1-xAs Heterojunction Interface | 2.1 | 60 | Citations (PDF) |
| 667 | Non-Destructive Determination of Cr Concentration Distribution in Cr Doped Semi-Insulating GaAs Substrates | 1.9 | 7 | Citations (PDF) |
| 668 | A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET) | 1.9 | 23 | Citations (PDF) |
| 669 | Tangential magnetoresistance of two‐dimensional electron gas at a selectively dopedn‐GaAlAs/GaAs heterojunction interface grown by molecular beam epitaxy | 3.0 | 15 | Citations (PDF) |
| 670 | Structural analysis of molten Na2BeF4 and NaBeF3 by X-ray diffraction | 1.0 | 10 | Citations (PDF) |
| 671 | Structural analysis of molten LiBr | 1.0 | 8 | Citations (PDF) |
| 672 | Optical quality GaInAs grown by molecular beam epitaxy | 2.3 | 19 | Citations (PDF) |
| 673 | GaInAs‐AlInAs structures grown by molecular beam epitaxy | 2.0 | 81 | Citations (PDF) |
| 674 | High-speed photoconductive detectors using GaInAs | 1.3 | 32 | Citations (PDF) |
| 675 | Self-diffusion of lithium, sodium, potassium and fluorine in a molten LiF + NaF + KF eutectic mixture | 1.0 | 15 | Citations (PDF) |
| 676 | X-ray diffraction analysis of molten NaCl near its melting point | 1.0 | 31 | Citations (PDF) |
| 677 | Integrated double heterostructure Ga 0.47 In 0.53 As photoreceiver with automatic gain control | 3.4 | 31 | Citations (PDF) |
| 678 | Characterisation of Al/AlInAs/GaInAs heterostructures | 0.0 | 1 | Citations (PDF) |
| 679 | On the origin and elimination of macroscopic defects in MBE films | 1.9 | 91 | Citations (PDF) |
| 680 | Channeling analysis of MBE InAlAs/InGaAs interfaces | 1.4 | 3 | Citations (PDF) |
| 681 | Ion Beam Analysis of Molecular Beam Epitaxy InAlAs / InGaAs Layer Structures | 3.1 | 10 | Citations (PDF) |
| 682 | Schottky-Barrier Properties of Nearly-Ideal (n≃1) Al Contacts on MBE- and Heat Cleaned-GaAs Surfaces | 1.9 | 8 | Citations (PDF) |
| 683 | TA-B5 short transit-time photoconductive detectors for high-speed optical communications | 2.7 | 0 | Citations (PDF) |
| 684 | WA-B8 Double-heterostructure Ga0.47In0.53As MESFET's | 2.7 | 0 | Citations (PDF) |
| 685 | Structural analysis of molten Ag2SO4 | 1.0 | 0 | Citations (PDF) |
| 686 | Double heterostructure Ga0.47In0.53As MESFETs by MBE | 3.4 | 52 | Citations (PDF) |
| 687 | Double heterostructure Ga0.47In0.53As MESFETs with submicron gates | 3.4 | 29 | Citations (PDF) |
| 688 | Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxy | 3.0 | 107 | Citations (PDF) |
| 689 | Structure of molten KCl | 1.0 | 17 | Citations (PDF) |
| 690 | Thermal conversion mechanism in semi‐insulating GaAs | 2.0 | 6 | Citations (PDF) |
| 691 | Irradiation effects of helium ions on the structure of amorphous Pd0.8Si0.2 alloy | 2.9 | 19 | Citations (PDF) |
| 692 | Structural analysis of molten K2SO4 | 1.0 | 5 | Citations (PDF) |
| 693 | Structural analysis of some molten materials by X-ray diffraction. Part 6.—MnCl2· 2RCl (RLi and K) | 1.0 | 3 | Citations (PDF) |
| 694 | Self-diffusion of lithium in molten LiBeF3 and Li2BeF4 | 1.1 | 10 | Citations (PDF) |
| 695 | Structural analysis of some molten materials by X-ray diffraction. Part 2.—Li2SO4, Na2SO4 and the mixed system | 1.0 | 6 | Citations (PDF) |
| 696 | Structural analysis of some molten materials by X-ray diffraction. Part 3.—MnCl2 | 1.0 | 11 | Citations (PDF) |
| 697 | Structural analysis of some molten materials by X-ray diffraction. Part 4.—Alkali nitrates RNO3(R = Li, Na, K, Rb, Cs and Ag) | 1.0 | 27 | Citations (PDF) |
| 698 | Structural analysis of molten Na2W2O7 | 1.1 | 13 | Citations (PDF) |
| 699 | Structural analysis of some molten materials by X-ray diffraction. Part 5.—LiCl, PbCl2 and their mixtures | 1.0 | 25 | Citations (PDF) |
| 700 | Structural analysis of molten Na2WO4 | 1.1 | 13 | Citations (PDF) |
| 701 | Self-diffusion of fluorine in molten dilithium tetrafluoroberyllate | 3.1 | 24 | Citations (PDF) |
| 702 | Antiferromagnetism in hcp Iron-Ruthenium and hcp Iron-Osmium Alloys | 2.1 | 54 | Citations (PDF) |
| 703 | Antiferromagnetism in hcp Iron-Manganese Alloys | 2.1 | 77 | Citations (PDF) |
| 704 | Antiferromagnetism of Dilute Cr Alloys with Co and Ni | 2.1 | 56 | Citations (PDF) |
| 705 | Magnetic Properties of the hcp Iron-Ruthenium Alloys | 2.1 | 6 | Citations (PDF) |
| 706 | Electrical Resistivity of Chromium Alloys | 2.1 | 16 | Citations (PDF) |
| 707 | First order transition between antiferromagnetic and sinusoidal structure of dilute Fe-Cr alloy | 2.3 | 7 | Citations (PDF) |
| 708 | Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions | 2.1 | 312 | Citations (PDF) |
| 709 | Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices | 2.1 | 78 | Citations (PDF) |
| 710 | Size dependence of the properties of synthetic-antiferromagnet-based stochastic magnetic tunnel junctions for probabilistic computing | 3.0 | 1 | Citations (PDF) |
| 711 | Temperature dependence of current-induced switching in thin epitaxial films of Mn3Sn: Revealing the dominant role of spin–orbit torque | 3.0 | 1 | Citations (PDF) |
| 712 | Stochastic switching time constant and instability in nanomagnets | 8.2 | 0 | Citations (PDF) |
| 713 | Spin-transfer torque efficiency in ferro- and antiferromagnetically coupled synthetic free layers studied with superparamagnetic magnetic tunnel junctions | 3.0 | 0 | Citations (PDF) |
| 714 | 130-nm CMOS-integrated superparamagnetic tunnel junction-based p-bit | 3.4 | 0 | Citations (PDF) |
