| 1 | Si/AlN p-n heterojunction interfaced with ultrathin SiO2 | 6.7 | 7 | Citations (PDF) |
| 2 | Design Principles and Performance Limitation of InGaN Nanowire Photonic Crystal Micro-LEDs | 1.8 | 2 | Citations (PDF) |
| 3 | E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks | 3.0 | 7 | Citations (PDF) |
| 4 | Photocatalytic Conversion of Methane to Ethane and Propane Using Cobalt‐Cluster‐Activated GaN Nanowires | 1.4 | 0 | Citations (PDF) |
| 5 | Photocatalytic Conversion of Methane to Ethane and Propane Using Cobalt‐Cluster‐Activated GaN Nanowires | 14.4 | 5 | Citations (PDF) |
| 6 | Molecular beam epitaxy, photocatalytic solar water splitting, and carrier dynamics of InGaN micro-network deep-nano structures | 1.2 | 2 | Citations (PDF) |
| 7 | Synergistic Metal‐Support Interactions in Au/GaN Catalysts for Photoelectrochemical Nitrate Reduction to Ammonia | 11.5 | 7 | Citations (PDF) |
| 8 | Van der Waals quantum dots on layered hexagonal boron nitride | 7.5 | 3 | Citations (PDF) |
| 9 | Corrections to “A Tunneling Light-Emitting Device With Ultra-Narrow Linewidth Emission at Room-Temperature” | 3.3 | 0 | Citations (PDF) |
| 10 | Charge-Transfer Excitons in Coupled Atomically Thin Polar Nitride Quantum Wells | 8.7 | 1 | Citations (PDF) |
| 11 | Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K | 3.0 | 5 | Citations (PDF) |
| 12 | Electric-field-induced domain walls in wurtzite ferroelectrics | 37.9 | 21 | Citations (PDF) |
| 13 | A temperature-insensitive nonlinear silicon bulk acoustic oscillator | 3.0 | 3 | Citations (PDF) |
| 14 | Nitrate reduction to ammonia catalyzed by GaN/Si photoelectrodes with metal clusters | 13.7 | 8 | Citations (PDF) |
| 15 | Unprecedented enhancement of piezoelectricity of wurtzite nitride semiconductors via thermal annealing | 13.7 | 11 | Citations (PDF) |
| 16 | Room-Temperature Catalyst-Free Ammonia Decomposition for Hydrogen Production on Water Microdroplets | 15.0 | 13 | Citations (PDF) |
| 17 | Semi-Supervised Vision Transformer Framework for AI-Based RHEED Image Classification of Ferroelectric Nitride MBE Growth | 3.4 | 1 | Citations (PDF) |
| 18 | ScAlN-based HEMTs: Challenges and opportunities 2025, 1, | | 3 | Citations (PDF) |
| 19 | UWBG ferroelectric ScAlN/AlGaN high-electron mobility transistor | 3.0 | 1 | Citations (PDF) |
| 20 | High-temperature memory devices based on ferroelectric ScAlN/AlGaN/GaN high-electron-mobility transistors | 5.5 | 3 | Citations (PDF) |
| 21 | Beryllium-incorporated ScAlN/GaN HEMTs with low off-current and high current stress stability | 3.0 | 0 | Citations (PDF) |
| 22 | Sc-rich monocrystalline ScGaN grown by MBE exhibits attractive ferroelectric properties | 3.0 | 0 | Citations (PDF) |
| 23 | Atomic layer deposition and characterization of scandium aluminum nitride | 3.0 | 0 | Citations (PDF) |
| 24 | Carrier Dynamics in Multiple Quantum Wells in InGaN/GaN Nanowire Heterostructures | 6.0 | 0 | Citations (PDF) |
| 25 | Achieving < ±25 ppb Frequency Stability With a ±0.125 °C Oven Control on a Si Interposer for an AlScN-on-Si Shear-BAW Resonator | 3.8 | 1 | Citations (PDF) |
| 26 | Sub-100 Ω/□ sheet resistance of GaN HEMT with ScAlN barrier | 3.0 | 0 | Citations (PDF) |
| 27 | Native Oxynitride Layer-Assisted Leakage Current Suppression and Coercive Field Reduction in Nitride Ferroelectrics | 5.4 | 3 | Citations (PDF) |
| 28 | Recent advances in photoelectrochemical ammonia synthesis | 3.0 | 1 | Citations (PDF) |
| 29 | III-nitride nanowires for emissive display technology | 3.0 | 16 | Citations (PDF) |
| 30 | Water-promoted selective photocatalytic methane oxidation for methanol production | 7.1 | 12 | Citations (PDF) |
| 31 | Photoelectrochemical Urea Synthesis from Nitrate and Carbon Dioxide on GaN Nanowires | 12.4 | 26 | Citations (PDF) |
| 32 | Structural and optical characterization of dilute Bi-doped GaN nanostructures grown by molecular beam epitaxy | 3.6 | 4 | Citations (PDF) |
| 33 | Concentrated Solar Light Photoelectrochemical Water Splitting for Stable and High‐Yield Hydrogen Production | 12.6 | 26 | Citations (PDF) |
| 34 | Plasma‐Damage Free Efficiency Scaling of Micro‐LEDs by Metal‐Assisted Chemical Etching | 7.0 | 14 | Citations (PDF) |
| 35 | Demystifying metal-assisted chemical etching of GaN and related heterojunctions | 10.4 | 5 | Citations (PDF) |
| 36 | Molecular beam epitaxy and characterization of ferroelectric quaternary alloy Sc0.2Al0.45Ga0.35N | 3.0 | 8 | Citations (PDF) |
| 37 | A 19 GHz All-Epitaxial Al₀.₈Sc₀.₂N Cascaded FBAR for RF Filtering Applications | 3.3 | 21 | Citations (PDF) |
| 38 | Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition | 3.0 | 2 | Citations (PDF) |
| 39 | Rethinking polarization in wurtzite semiconductors | 3.0 | 17 | Citations (PDF) |
| 40 | A synergetic cocatalyst for conversion of carbon dioxide, sunlight, and water into methanol | 7.5 | 11 | Citations (PDF) |
| 41 | Photoinduced Surface Oxidation of GaN Nanowires Facilitates Hydrogen Evolution | 12.4 | 7 | Citations (PDF) |
| 42 | A Tunneling Light-Emitting Device With Ultra-Narrow Linewidth Emission at Room-Temperature | 3.3 | 1 | Citations (PDF) |
| 43 | Interfacially coupled Cu-cluster/GaN photocathode for efficient CO2 to ethylene conversion | 18.1 | 22 | Citations (PDF) |
| 44 | Selective incorporation of antimony into gallium nitride | 3.0 | 2 | Citations (PDF) |
| 45 | Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxy | 3.6 | 2 | Citations (PDF) |
| 46 | Nitrogen-polar GaN quantum dots with tunable emission in the ultraviolet-A, B, and C bands | 3.0 | 0 | Citations (PDF) |
| 47 | Effect of temperature on the performance of ScAlN/GaN high-electron mobility transistor | 3.0 | 14 | Citations (PDF) |
| 48 | Nanoscale Engineering of Wurtzite Ferroelectrics: Unveiling Phase Transition and Ferroelectric Switching in ScAlN Nanowires | 5.3 | 2 | Citations (PDF) |
| 49 | An SEM-Based Nanomanipulation System for Multiphysical Characterization of Single InGaN/GaN Nanowires | 6.1 | 16 | Citations (PDF) |
| 50 | Enhanced Pockels Effect in AlN Microring Resonator Modulators Based on AlGaN/AlN Multiple Quantum Wells | 6.0 | 10 | Citations (PDF) |
| 51 | Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting | 37.9 | 1,123 | Citations (PDF) |
| 52 | Pt nanoclusters on GaN nanowires for solar-asssisted seawater hydrogen evolution | 13.7 | 79 | Citations (PDF) |
| 53 | Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy | 3.0 | 72 | Citations (PDF) |
| 54 | Dawn of nitride ferroelectric semiconductors: from materials to devices | 2.2 | 100 | Citations (PDF) |
| 55 | An Ultrahigh Efficiency Excitonic Micro-LED | 8.7 | 63 | Citations (PDF) |
| 56 | One-dimensional III-nitrides: towards ultrahigh efficiency, ultrahigh stability artificial photosynthesis | 9.3 | 30 | Citations (PDF) |
| 57 | Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT | 3.0 | 66 | Citations (PDF) |
| 58 | Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes | 4.9 | 16 | Citations (PDF) |
| 59 | Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐Memory Computing | 24.5 | 56 | Citations (PDF) |
| 60 | Ferroelectric Nitride Heterostructures on CMOS Compatible Molybdenum for Synaptic Memristors | 8.0 | 39 | Citations (PDF) |
| 61 | A red-emitting micrometer scale LED with external quantum efficiency &gt;8% | 3.0 | 63 | Citations (PDF) |
| 62 | Oxynitrides enabled photoelectrochemical water splitting with over 3,000 hrs stable operation in practical two-electrode configuration | 13.7 | 56 | Citations (PDF) |
| 63 | On the surface oxidation and band alignment of ferroelectric Sc0.18Al0.82N/GaN heterostructures | 6.7 | 28 | Citations (PDF) |
| 64 | A mm-Wave Trilayer AlN/ScAlN/AlN Higher Order Mode FBAR 2023, 33, 803-806 | | 43 | Citations (PDF) |
| 65 | Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures | 6.7 | 20 | Citations (PDF) |
| 66 | Epitaxial hexagonal boron nitride with high quantum efficiency | 3.6 | 9 | Citations (PDF) |
| 67 | Recent progress on micro-LEDs 2023, 4, 1 | | 22 | Citations (PDF) |
| 68 | 12‐3:
Invited Paper:
Nanowire Micro‐LEDs for Augmented Reality and Virtual Reality (AR/VR) Displays | 0.6 | 1 | Citations (PDF) |
| 69 | The micro-LED roadmap: status quo and prospects | 7.0 | 98 | Citations (PDF) |
| 70 | Light-driven synthesis of C2H6 from CO2 and H2O on a bimetallic AuIr composite supported on InGaN nanowires | 40.9 | 127 | Citations (PDF) |
| 71 | Controlled ferroelectric switching in ultrawide bandgap AlN/ScAlN multilayers | 3.0 | 13 | Citations (PDF) |
| 72 | Domain control and periodic poling of epitaxial ScAlN | 3.0 | 13 | Citations (PDF) |
| 73 | Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity | 7.5 | 6 | Citations (PDF) |
| 74 | Ferroelectric YAlN grown by molecular beam epitaxy | 3.0 | 58 | Citations (PDF) |
| 75 | ScAlN-Based ITO Channel Ferroelectric Field-Effect Transistors With Large Memory Window | 2.7 | 18 | Citations (PDF) |
| 76 | Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy | 3.0 | 7 | Citations (PDF) |
| 77 | Impact of Charge Carrier Transfer and Strain Relaxation on Red-Emitting InGaN/GaN Heterostructures | 6.0 | 4 | Citations (PDF) |
| 78 | Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties | 3.6 | 8 | Citations (PDF) |
| 79 | Efficient photoelectrochemical conversion of CO2 to syngas by photocathode engineering | 12.4 | 22 | Citations (PDF) |
| 80 | GaN‐Based Deep‐Nano Structures: Break the Efficiency Bottleneck of Conventional Nanoscale Optoelectronics | 7.0 | 9 | Citations (PDF) |
| 81 | Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN | 3.0 | 39 | Citations (PDF) |
| 82 | N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs | 6.4 | 50 | Citations (PDF) |
| 83 | Silver Halide Catalysts on GaN Nanowires/Si Heterojunction Photocathodes for CO2 Reduction to Syngas at High Current Density | 12.4 | 44 | Citations (PDF) |
| 84 | Bi catalysts supported on GaN nanowires toward efficient photoelectrochemical CO2 reduction | 9.3 | 39 | Citations (PDF) |
| 85 | III-Nitride Nanostructures for High Efficiency Micro-LEDs and Ultraviolet Optoelectronics | 1.3 | 26 | Citations (PDF) |
| 86 | Crystallographic Effects of GaN Nanostructures in Photoelectrochemical Reaction | 8.7 | 28 | Citations (PDF) |
| 87 | Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization | 24.5 | 40 | Citations (PDF) |
| 88 | N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs | 6.4 | 54 | Citations (PDF) |
| 89 | Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111) | 8.0 | 30 | Citations (PDF) |
| 90 | An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory | 4.9 | 118 | Citations (PDF) |
| 91 | Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption | 3.4 | 7 | Citations (PDF) |
| 92 | Long-Term Stability Metrics of Photoelectrochemical Water Splitting | 2.0 | 27 | Citations (PDF) |
| 93 | III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis | 10.2 | 51 | Citations (PDF) |
| 94 | Self-Rolled-Up Aluminum Nitride-Based 3D Architectures Enabled by Record-High Differential Stress | 8.0 | 20 | Citations (PDF) |
| 95 | Tunable green syngas generation from CO
2
and H
2
O with sunlight as the only energy input | 7.5 | 47 | Citations (PDF) |
| 96 | Ferroelectric N-polar ScAlN/GaN heterostructures grown by molecular beam epitaxy | 3.0 | 56 | Citations (PDF) |
| 97 | Impact of dislocation density on the ferroelectric properties of ScAlN grown by molecular beam epitaxy | 3.0 | 47 | Citations (PDF) |
| 98 | Metal–Support Interaction-Promoted Photothermal Catalytic Methane Reforming into Liquid Fuels | 4.2 | 16 | Citations (PDF) |
| 99 | Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale | 6.4 | 23 | Citations (PDF) |
| 100 | InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering | 19.9 | 46 | Citations (PDF) |
| 101 | Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN | 3.6 | 27 | Citations (PDF) |
| 102 | Group-III Nitrides Catalyzed Transformations of Organic Molecules | 16.6 | 19 | Citations (PDF) |
| 103 | Highly Uniform, Self‐Assembled AlGaN Nanowires for Self‐Powered Solar‐Blind Photodetector with Fast‐Response Speed and High Responsivity | 7.0 | 110 | Citations (PDF) |
| 104 | Pt/AlGaN Nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection | 8.7 | 205 | Citations (PDF) |
| 105 | Selective area grown AlInGaN nanowire arrays with core–shell structures for photovoltaics on silicon | 5.0 | 5 | Citations (PDF) |
| 106 | Oxygen defect dominated photoluminescence emission of ScxAl1−xN grown by molecular beam epitaxy | 3.0 | 36 | Citations (PDF) |
| 107 | Dilute-antimonide GaSbN/GaN dots-in-wire heterostructures grown by molecular beam epitaxy: Structural and optical properties | 3.0 | 7 | Citations (PDF) |
| 108 | Electronic structure of aqueous two-dimensional photocatalyst | 10.7 | 12 | Citations (PDF) |
| 109 | Development of a photoelectrochemically self-improving Si/GaN photocathode for efficient and durable H2 production | 33.3 | 98 | Citations (PDF) |
| 110 | Demonstration of green and UV wavelength high Q aluminum nitride on sapphire microring resonators integrated with microheaters | 3.0 | 12 | Citations (PDF) |
| 111 | Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy | 3.0 | 162 | Citations (PDF) |
| 112 | Electron overflow of AlGaN deep ultraviolet light emitting diodes | 3.0 | 27 | Citations (PDF) |
| 113 | On the design and performance of InGaN/Si double-junction photocathodes | 3.0 | 20 | Citations (PDF) |
| 114 | CuS-Decorated GaN Nanowires on Silicon Photocathodes for Converting CO2 Mixture Gas to HCOOH | 15.0 | 112 | Citations (PDF) |
| 115 | N-polar ScAlN and HEMTs grown by molecular beam epitaxy | 3.0 | 57 | Citations (PDF) |
| 116 | Nanoscale and quantum engineering of III-nitride heterostructures for high efficiency UV-C and far UV-C optoelectronics | 1.9 | 5 | Citations (PDF) |
| 117 | Bidirectional photocurrent in p–n heterojunction nanowires | 33.3 | 304 | Citations (PDF) |
| 118 | Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy | 3.0 | 90 | Citations (PDF) |
| 119 | Monolithic integration of multicolor InGaN LEDs with uniform luminescence emission | 3.0 | 9 | Citations (PDF) |
| 120 | A microfluidic field-effect transistor biosensor with rolled-up indium nitride microtubes | 9.6 | 38 | Citations (PDF) |
| 121 | Surface-directed ZnGa2O4 and β-Ga2O3 nanofins coated with a non-polar GaN shell based on the Kirkendall effect | 2.4 | 0 | Citations (PDF) |
| 122 | High efficiency InGaN nanowire tunnel junction green micro-LEDs | 3.0 | 21 | Citations (PDF) |
| 123 | Monolayer GaN excitonic deep ultraviolet light emitting diodes | 3.0 | 54 | Citations (PDF) |
| 124 | An electrically pumped surface-emitting semiconductor green laser | 10.9 | 111 | Citations (PDF) |
| 125 | 30‐3:
Distinguished Paper:
Sub‐Micron Full‐Color LED Pixels for Micro‐Displays and Micro‐LED Main Displays | 0.6 | 2 | Citations (PDF) |
| 126 | Micrometer scale InGaN green light emitting diodes with ultra-stable operation | 3.0 | 29 | Citations (PDF) |
| 127 | InGaN/Si Double-Junction Photocathode for Unassisted Solar Water Splitting | 17.0 | 83 | Citations (PDF) |
| 128 | Few-Atomic-Layers Iron for Hydrogen Evolution from Water by Photoelectrocatalysis | 3.6 | 9 | Citations (PDF) |
| 129 | Decoupling Strategy for Enhanced Syngas Generation from Photoelectrochemical CO2 Reduction | 3.6 | 25 | Citations (PDF) |
| 130 | Surface photovoltage spectroscopy observes junctions and carrier separation in gallium nitride nanowire arrays for overall water-splitting | 2.8 | 25 | Citations (PDF) |
| 131 | Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors | 4.9 | 31 | Citations (PDF) |
| 132 | Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells | 8.2 | 25 | Citations (PDF) |
| 133 | Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy | 3.0 | 9 | Citations (PDF) |
| 134 | Photocatalytic Methylation of Nonactivated sp3 and sp2 C–H Bonds Using Methanol on GaN | 12.4 | 36 | Citations (PDF) |
| 135 | Hyperspectral absorption of semiconductor monolayer crystals | 3.0 | 4 | Citations (PDF) |
| 136 | Nanoscale Structural and Emission Properties within “Russian Doll”‐Type InGaN/AlGaN Quantum Wells | 7.0 | 4 | Citations (PDF) |
| 137 | Wavelength tuning in the purple wavelengths using strain-controlled AlxGa1–xN/GaN disk-in-wire structures | 3.0 | 6 | Citations (PDF) |
| 138 | GaN nanowires as a reusable photoredox catalyst for radical coupling of carbonyl under blacklight irradiation | 7.1 | 35 | Citations (PDF) |
| 139 | Highly efficient and stable Si photocathode with hierarchical MoS2/Ni3S2 catalyst for solar hydrogen production in alkaline media | 16.2 | 66 | Citations (PDF) |
| 140 | Deep ultraviolet monolayer GaN/AlN disk-in-nanowire array photodiode on silicon | 3.0 | 20 | Citations (PDF) |
| 141 | Highly efficient binary copper−iron catalyst for photoelectrochemical carbon dioxide reduction toward methane | 7.5 | 135 | Citations (PDF) |
| 142 | Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes | 3.0 | 30 | Citations (PDF) |
| 143 | Submicron full‐color LED pixels for microdisplays and micro‐LED main displays | 2.0 | 28 | Citations (PDF) |
| 144 | Molecular beam epitaxy and characterization of wurtzite ScxAl1−xN | 3.0 | 82 | Citations (PDF) |
| 145 | An AlGaN tunnel junction light emitting diode operating at 255 nm | 3.0 | 32 | Citations (PDF) |
| 146 | High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes | 6.4 | 90 | Citations (PDF) |
| 147 | Toward ultrahigh efficiency GaN nano and micro full-color LEDs | 0.0 | 0 | Citations (PDF) |
| 148 | Efficient Nitrogen Fixation Catalyzed by Gallium Nitride Nanowire Using Nitrogen and Water | 3.6 | 26 | Citations (PDF) |
| 149 | A GaN:Sn nanoarchitecture integrated on a silicon platform for converting CO<sub>2</sub> to HCOOH by photoelectrocatalysis | 30.8 | 104 | Citations (PDF) |
| 150 | A Single-Junction Cathodic Approach for Stable Unassisted Solar Water SplittingJoule, 2019, 3, 2444-2456 | 25.7 | 57 | Citations (PDF) |
| 151 | Optically invariant InGaN nanowire light-emitting diodes on flexible substrates under mechanical manipulation | 13.9 | 22 | Citations (PDF) |
| 152 | Probing the large bandgap-bowing and signature of antimony (Sb) in dilute-antimonide III-nitride using micro-Raman scattering | 2.0 | 6 | Citations (PDF) |
| 153 | Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures | 8.7 | 42 | Citations (PDF) |
| 154 | Unassisted solar water splitting with 9.8% efficiency and over 100 h stability based on Si solar cells and photoelectrodes catalyzed by bifunctional Ni–Mo/Ni | 9.3 | 87 | Citations (PDF) |
| 155 | Structural and electrical characterization of monolithic core–double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy | 5.0 | 13 | Citations (PDF) |
| 156 | Stable Unassisted Solar Water Splitting on Semiconductor Photocathodes Protected by Multifunctional GaN Nanostructures | 17.0 | 73 | Citations (PDF) |
| 157 | Photodeposition of a conformal metal oxide nanocoating | 3.4 | 6 | Citations (PDF) |
| 158 | Structural origin of the high-performance light-emitting InGaN/AlGaN quantum disks | 5.0 | 16 | Citations (PDF) |
| 159 | Binary molecular-semiconductor p–n junctions for photoelectrocatalytic CO2 reduction | 50.6 | 201 | Citations (PDF) |
| 160 | Direct Catalytic Methanol-to-Ethanol Photo-conversion via Methyl Carbene | 16.6 | 70 | Citations (PDF) |
| 161 | Dependence of interface energetics and kinetics on catalyst loading in a photoelectrochemical system | 8.6 | 19 | Citations (PDF) |
| 162 | Effect of low hole mobility on the efficiency droop of AlGaN nanowire deep ultraviolet light emitting diodes | 3.0 | 42 | Citations (PDF) |
| 163 | Direct Deposition of Crystalline Ta<sub>3</sub>N<sub>5</sub> Thin Films on FTO for PEC Water Splitting | 8.0 | 62 | Citations (PDF) |
| 164 | A quadruple-band metal–nitride nanowire artificial photosynthesis system for high efficiency photocatalytic overall solar water splitting | 10.2 | 49 | Citations (PDF) |
| 165 | Molecular Beam Epitaxy of III-Nitride Nanowires: Emerging Applications From Deep-Ultraviolet Light Emitters and Micro-LEDs to Artificial Photosynthesis | 1.1 | 16 | Citations (PDF) |
| 166 | Long-term stability studies of a semiconductor photoelectrode in three-electrode configuration | 9.3 | 49 | Citations (PDF) |
| 167 | An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer | 16.2 | 51 | Citations (PDF) |
| 168 | Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ∼280 nm emission grown by plasma-assisted molecular beam epitaxy | 1.9 | 6 | Citations (PDF) |
| 169 | Complementary cathodoluminescence lifetime imaging configurations in a scanning electron microscope | 2.1 | 48 | Citations (PDF) |
| 170 | Molecular beam epitaxy and characterization of Al0.6Ga0.4N epilayers | 1.9 | 9 | Citations (PDF) |
| 171 | Molecular beam epitaxy and characterization of AlGaN nanowire ultraviolet light emitting diodes on Al coated Si (0 0 1) substrate | 1.9 | 29 | Citations (PDF) |
| 172 | Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy | 2.7 | 24 | Citations (PDF) |
| 173 | Silicon based photoelectrodes for photoelectrochemical water splitting | 3.0 | 82 | Citations (PDF) |
| 174 | An electrically injected AlGaN nanowire defect-free photonic crystal ultraviolet laser | 3.0 | 31 | Citations (PDF) |
| 175 | Effect of electron blocking layer on the efficiency of AlGaN mid-ultraviolet light emitting diodes | 3.0 | 35 | Citations (PDF) |
| 176 | Photonic crystal tunnel junction deep ultraviolet light emitting diodes with enhanced light extraction efficiency | 3.0 | 23 | Citations (PDF) |
| 177 | Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform | 3.0 | 39 | Citations (PDF) |
| 178 | AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics | 6.4 | 20 | Citations (PDF) |
| 179 | A dominant electron trap in molecular beam epitaxial InAlN lattice-matched to GaN | 2.9 | 2 | Citations (PDF) |
| 180 | Passivation of Surface States of AlGaN Nanowires Using H3PO4 Treatment To Enhance the Performance of UV-LEDs and Photoanodes | 5.3 | 10 | Citations (PDF) |
| 181 | Efficient Unassisted Overall Photocatalytic Seawater Splitting on GaN-Based Nanowire Arrays | 3.1 | 126 | Citations (PDF) |
| 182 | 2D strain mapping using scanning transmission electron microscopy Moiré interferometry and geometrical phase analysis | 2.1 | 43 | Citations (PDF) |
| 183 | Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV | 17.0 | 91 | Citations (PDF) |
| 184 | Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2 | 3.4 | 38 | Citations (PDF) |
| 185 | A photochemical diode artificial photosynthesis system for unassisted high efficiency overall pure water splitting | 13.7 | 161 | Citations (PDF) |
| 186 | Nanoscale Relative Emission Efficiency Mapping Using Cathodoluminescence g(2) Imaging | 8.7 | 42 | Citations (PDF) |
| 187 | Towards enhancing photocatalytic hydrogen generation: Which is more important, alloy synergistic effect or plasmonic effect? | 20.5 | 69 | Citations (PDF) |
| 188 | Characterizing the electrical breakdown properties of single n-i-n-n+:GaN nanowires | 3.0 | 5 | Citations (PDF) |
| 189 | Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting | 13.7 | 113 | Citations (PDF) |
| 190 | A bifunctional and stable Ni–Co–S/Ni–Co–P bistratal electrocatalyst for 10.8%-efficient overall solar water splitting | 9.3 | 57 | Citations (PDF) |
| 191 | Heteroepitaxy of Fin-Shaped InGaN Nanoridge Using Molecular Beam Epitaxy | 3.4 | 3 | Citations (PDF) |
| 192 | AlGaN Nanowires: Path to Electrically Injected Semiconductor Deep Ultraviolet Lasers | 1.3 | 16 | Citations (PDF) |
| 193 | High Efficiency Si Photocathode Protected by Multifunctional GaN Nanostructures | 8.7 | 106 | Citations (PDF) |
| 194 | Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (0 0 1) substrate through controlled nanowire coalescence | 1.9 | 16 | Citations (PDF) |
| 195 | Charge carrier transport properties of Mg-doped Al<sub>0.6</sub>Ga<sub>0.4</sub>N grown by molecular beam epitaxy | 2.2 | 18 | Citations (PDF) |
| 196 | Improving the Efficiency of Transverse Magnetic Polarized Emission from AlGaN Based LEDs by Using Nanowire Photonic Crystal | 1.8 | 26 | Citations (PDF) |
| 197 | Rolled-up SiO<sub> <i>x</i> </sub>/SiN<sub> <i>x</i> </sub> microtubes with an enhanced quality factor for sensitive solvent sensing | 2.6 | 17 | Citations (PDF) |
| 198 | Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy | 3.0 | 31 | Citations (PDF) |
| 199 | Efficient coupling of disorder states to excitons in an InGaN nanostructure | 3.4 | 2 | Citations (PDF) |
| 200 | Making of an Industry-Friendly Artificial Photosynthesis Device | 17.0 | 56 | Citations (PDF) |
| 201 | Wafer-scale synthesis of monolayer WSe2: A multi-functional photocatalyst for efficient overall pure water splitting | 16.2 | 64 | Citations (PDF) |
| 202 | Photoelectrochemical CO2 Reduction into Syngas with the Metal/Oxide Interface | 15.0 | 235 | Citations (PDF) |
| 203 | Efficient n+p-Si photocathodes for solar H2 production catalyzed by Co-W-S and stabilized by Ti buffer layer | 20.5 | 42 | Citations (PDF) |
| 204 | A High Efficiency Si Photoanode Protected by Few‐Layer MoSe2 | 4.6 | 14 | Citations (PDF) |
| 205 | An AlGaN Core–Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band | 8.7 | 127 | Citations (PDF) |
| 206 | On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures | 3.0 | 85 | Citations (PDF) |
| 207 | Photorechargeable High Voltage Redox Battery Enabled by Ta3N5 and GaN/Si Dual‐Photoelectrode | 24.5 | 72 | Citations (PDF) |
| 208 | AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics | 8.7 | 95 | Citations (PDF) |
| 209 | Nitrogen Photofixation over III‐Nitride Nanowires Assisted by Ruthenium Clusters of Low Atomicity | 14.4 | 126 | Citations (PDF) |
| 210 | Nitrogen Photofixation over III‐Nitride Nanowires Assisted by Ruthenium Clusters of Low Atomicity | 1.4 | 27 | Citations (PDF) |
| 211 | Understanding the role of co-catalysts on silicon photocathodes using intensity modulated photocurrent spectroscopy | 2.7 | 41 | Citations (PDF) |
| 212 | Roadmap on solar water splitting: current status and future prospects | 3.0 | 187 | Citations (PDF) |
| 213 | Sub-μeVdecoherence-induced population pulsation resonances in an InGaN system | 3.4 | 2 | Citations (PDF) |
| 214 | Molecular beam epitaxial growth and characterization of AlN nanowall deep UV light emitting diodes | 3.0 | 10 | Citations (PDF) |
| 215 | Scalable Nanowire Photonic Crystals: Molding the Light Emission of InGaN | 17.0 | 65 | Citations (PDF) |
| 216 | Optically active dilute-antimonide III-nitride nanostructures for optoelectronic devices | 3.0 | 12 | Citations (PDF) |
| 217 | A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV | 22.5 | 43 | Citations (PDF) |
| 218 | Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics | 3.0 | 47 | Citations (PDF) |
| 219 | Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy | 2.1 | 41 | Citations (PDF) |
| 220 | Band engineering of GaSbN alloy for solar fuel applications | 2.7 | 10 | Citations (PDF) |
| 221 | High efficiency, Pt-free photoelectrochemical cells for solar hydrogen generation based on “giant” quantum dots | 16.2 | 124 | Citations (PDF) |
| 222 | A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane | 3.4 | 69 | Citations (PDF) |
| 223 | An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature | 3.0 | 81 | Citations (PDF) |
| 224 | An In0.5Ga0.5N nanowire photoanode for harvesting deep visible light photons | 3.6 | 17 | Citations (PDF) |
| 225 | Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures | 3.0 | 123 | Citations (PDF) |
| 226 | Electronic transport through Al/InN nanowire/Al junctions | 3.0 | 1 | Citations (PDF) |
| 227 | Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm | 3.0 | 71 | Citations (PDF) |
| 228 | Phase engineering of MoS2 through GaN/AlN substrate coupling and electron doping | 2.7 | 14 | Citations (PDF) |
| 229 | Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics | 3.6 | 70 | Citations (PDF) |
| 230 | Bandgap Transition of 2H Transition Metal Dichalcogenides: Predictive Tuning via Inherent Interface Coupling and Strain | 3.1 | 31 | Citations (PDF) |
| 231 | Simple and Clean Photoinduced Aromatic Trifluoromethylation Reaction | 15.0 | 309 | Citations (PDF) |
| 232 | Tunable Syngas Production from CO2 and H2O in an Aqueous Photoelectrochemical Cell | 1.4 | 12 | Citations (PDF) |
| 233 | Tunable Syngas Production from CO2 and H2O in an Aqueous Photoelectrochemical Cell | 14.4 | 128 | Citations (PDF) |
| 234 | Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation‐Free Planar Ultraviolet Photonic Device Applications | 24.5 | 102 | Citations (PDF) |
| 235 | Atomic‐Scale Origin of Long‐Term Stability and High Performance of p‐GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting | 24.5 | 130 | Citations (PDF) |
| 236 | Full-Color Single Nanowire Pixels for Projection Displays | 8.7 | 182 | Citations (PDF) |
| 237 | Photochemical Carbon Dioxide Reduction on Mg-Doped Ga(In)N Nanowire Arrays under Visible Light Irradiation | 17.0 | 76 | Citations (PDF) |
| 238 | Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes | 8.7 | 58 | Citations (PDF) |
| 239 | Artificial photosynthesis using metal/nonmetal-nitride semiconductors: current status, prospects, and challenges | 9.3 | 151 | Citations (PDF) |
| 240 | Nanogenerators based on vertically aligned InN nanowires | 5.0 | 40 | Citations (PDF) |
| 241 | Near‐Infrared Colloidal Quantum Dots for Efficient and Durable Photoelectrochemical Solar‐Driven Hydrogen Production | 12.6 | 103 | Citations (PDF) |
| 242 | Phase engineering of monolayer transition-metal dichalcogenide through coupled electron doping and lattice deformation | 3.0 | 35 | Citations (PDF) |
| 243 | Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy | 3.0 | 51 | Citations (PDF) |
| 244 | Photoelectrochemical reduction of carbon dioxide using Ge doped GaN nanowire photoanodes | 3.6 | 17 | Citations (PDF) |
| 245 | Group III-nitride nanowire structures for photocatalytic hydrogen evolution under visible light irradiation | 3.6 | 48 | Citations (PDF) |
| 246 | Epitaxial Bi2FeCrO6 Multiferroic Thin Film as a New Visible Light Absorbing Photocathode MaterialSmall, 2015, 11, 4018-4026 | 11.5 | 85 | Citations (PDF) |
| 247 | Simple and Efficient System for Combined Solar Energy Harvesting and Reversible Hydrogen Storage | 15.0 | 71 | Citations (PDF) |
| 248 | Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light‐emitting diodes | 0.5 | 1 | Citations (PDF) |
| 249 | Three-Dimensional Quantum Confinement of Charge Carriers in Self-Organized AlGaN Nanowires: A Viable Route to Electrically Injected Deep Ultraviolet Lasers | 8.7 | 94 | Citations (PDF) |
| 250 | III-Nitride nanowire optoelectronics | 10.2 | 222 | Citations (PDF) |
| 251 | Formation and Nature of InGaN Quantum Dots in GaN Nanowires | 8.7 | 62 | Citations (PDF) |
| 252 | Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers | 3.4 | 107 | Citations (PDF) |
| 253 | Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources | 3.4 | 199 | Citations (PDF) |
| 254 | InGaN/GaN dot‐in‐a‐wire: ultimate terahertz nanostructure | 9.2 | 3 | Citations (PDF) |
| 255 | Polarization‐resolved electroluminescence study of InGaN/GaN dot‐in‐a‐wire light‐emitting diodes grown by molecular beam epitaxy | 1.5 | 10 | Citations (PDF) |
| 256 | Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature | 32.2 | 280 | Citations (PDF) |
| 257 | An electrically injected rolled-up semiconductor tube laser | 3.0 | 33 | Citations (PDF) |
| 258 | Photo-induced Metal-Catalyst-Free Aromatic Finkelstein Reaction | 15.0 | 170 | Citations (PDF) |
| 259 | Optically Pumped Two-Dimensional MoS2 Lasers Operating at Room-Temperature | 8.7 | 241 | Citations (PDF) |
| 260 | Wafer-Level Artificial Photosynthesis for CO2 Reduction into CH4 and CO Using GaN Nanowires | 12.4 | 201 | Citations (PDF) |
| 261 | On the Fermi-level pinning of InN grown surfaces | 2.1 | 8 | Citations (PDF) |
| 262 | Ultrafast Exciton Dynamics in InGaN/GaN and Rh/Cr2O3 Nanoparticle-Decorated InGaN/GaN Nanowires | 4.2 | 56 | Citations (PDF) |
| 263 | Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light | 3.0 | 29 | Citations (PDF) |
| 264 | High Efficiency Solar-to-Hydrogen Conversion on a Monolithically Integrated InGaN/GaN/Si Adaptive Tunnel Junction Photocathode | 8.7 | 105 | Citations (PDF) |
| 265 | Visible light-driven efficient overall water splitting using p-type metal-nitride nanowire arrays | 13.7 | 371 | Citations (PDF) |
| 266 | Optical constants of In_xGa_1−xN (0 ≤ x ≤ 073) in the visible and near-infrared wavelength regimes | 3.0 | 9 | Citations (PDF) |
| 267 | Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes | 8.7 | 99 | Citations (PDF) |
| 268 | Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon | 8.7 | 87 | Citations (PDF) |
| 269 | High efficiency, full-color AlInGaN quaternary nanowire light emitting diodes with spontaneous core-shell structures on Si | 3.0 | 47 | Citations (PDF) |
| 270 | An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band | 3.0 | 86 | Citations (PDF) |
| 271 | Atomic Ordering in InGaN Alloys within Nanowire Heterostructures | 8.7 | 34 | Citations (PDF) |
| 272 | A Metal-Nitride Nanowire Dual-Photoelectrode Device for Unassisted Solar-to-Hydrogen Conversion under Parallel Illumination | 8.7 | 62 | Citations (PDF) |
| 273 | Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy | 2.6 | 25 | Citations (PDF) |
| 274 | Electrically injected near-infrared light emission from single InN nanowire p-i-n diode | 3.0 | 33 | Citations (PDF) |
| 275 | Nanoscale rolled‐up InAs quantum dot tube photodetector | 0.7 | 4 | Citations (PDF) |
| 276 | Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit | 3.0 | 12 | Citations (PDF) |
| 277 | Improvement of the light extraction efficiency of GaN-based LEDs using rolled-up nanotube arrays | 3.0 | 13 | Citations (PDF) |
| 278 | Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon | 3.0 | 89 | Citations (PDF) |
| 279 | Study on the coalescence of dislocation-free GaN nanowires on Si and SiOx | 1.0 | 24 | Citations (PDF) |
| 280 | Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates | 3.0 | 51 | Citations (PDF) |
| 281 | Thermal Non‐Oxidative Aromatization of Light Alkanes Catalyzed by Gallium Nitride | 1.4 | 16 | Citations (PDF) |
| 282 | Phosphor-Free InGaN/GaN Dot-in-a-Wire White Light-Emitting Diodes on Copper Substrates | 2.3 | 19 | Citations (PDF) |
| 283 | Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting | 13.7 | 272 | Citations (PDF) |
| 284 | Photoinduced Conversion of Methane into Benzene over GaN Nanowires | 15.0 | 164 | Citations (PDF) |
| 285 | On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes | 1.3 | 39 | Citations (PDF) |
| 286 | Is the Fermi‐level pinned on InN grown surfaces? | 0.7 | 7 | Citations (PDF) |
| 287 | Thermal Non‐Oxidative Aromatization of Light Alkanes Catalyzed by Gallium Nitride | 14.4 | 74 | Citations (PDF) |
| 288 | p-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy | 5.0 | 32 | Citations (PDF) |
| 289 | Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy | 1.0 | 12 | Citations (PDF) |
| 290 | Enhancing visible-light photoelectrochemical water splitting through transition-metal doped TiO2 nanorod arrays | 9.3 | 177 | Citations (PDF) |
| 291 | Exciton Kinetics, Quantum Efficiency, and Efficiency Droop of Monolayer MoS2 Light-Emitting Devices | 8.7 | 172 | Citations (PDF) |
| 292 | One-Step Overall Water Splitting under Visible Light Using Multiband InGaN/GaN Nanowire Heterostructures | 15.3 | 208 | Citations (PDF) |
| 293 | Highly Stable Photoelectrochemical Water Splitting and Hydrogen Generation Using a Double-Band InGaN/GaN Core/Shell Nanowire Photoanode | 8.7 | 201 | Citations (PDF) |
| 294 | Review of recent progress of III-nitride nanowire lasers | 0.9 | 101 | Citations (PDF) |
| 295 | p-Type InN Nanowires | 8.7 | 104 | Citations (PDF) |
| 296 | Spectral and spatial contributions to white light generation from InGaN/GaN dot-in-a-wire nanostructures | 2.0 | 3 | Citations (PDF) |
| 297 | Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy | 5.0 | 81 | Citations (PDF) |
| 298 | Remarkably enhanced photocatalytic activity of laser ablated Au nanoparticle decorated BiFeO3 nanowires under visible-light | 3.4 | 170 | Citations (PDF) |
| 299 | Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes | 8.7 | 141 | Citations (PDF) |
| 300 | Characterization of azimuthal and longitudinal modes in rolled-up InGaAs/GaAs microtubes at telecom wavelengths | 3.0 | 12 | Citations (PDF) |
| 301 | Nonradiative Recombination Mechanism in Phosphor-Free GaN-Based Nanowire White Light Emitting Diodes and the effect of Ammonium Sulfide Surface Passivation | 0.4 | 20 | Citations (PDF) |
| 302 | Optical and structural characterization of nitrogen-rich InN: Transition from nearly intrinsic to strongly n-type degenerate with temperature | 3.0 | 7 | Citations (PDF) |
| 303 | Photoluminescence properties of Mg-doped InN nanowires | 3.0 | 16 | Citations (PDF) |
| 304 | Probing the electrical transport properties of intrinsic InN nanowires | 3.0 | 49 | Citations (PDF) |
| 305 | Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy | 3.0 | 2 | Citations (PDF) |
| 306 | Counterpropagating Whispering-Gallery-Modes of Rolled-up Semiconductor Microtubes | 1.7 | 4 | Citations (PDF) |
| 307 | On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping | 1.2 | 15 | Citations (PDF) |
| 308 | Electrical transport and optical model of GaAs-AlInP core-shell nanowires | 2.0 | 29 | Citations (PDF) |
| 309 | High efficiency ultraviolet emission from AlxGa1−xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy | 3.0 | 41 | Citations (PDF) |
| 310 | Dynamical thermal effects in InGaAsP microtubes at telecom wavelengths | 3.0 | 3 | Citations (PDF) |
| 311 | Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires | 3.4 | 28 | Citations (PDF) |
| 312 | High-Efficiency InGaN/GaN Dot-in-a-Wire Red Light-Emitting Diodes | 1.7 | 40 | Citations (PDF) |
| 313 | Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1−xN core/shell nanowire heterostructures on Si(111) substrates | 2.6 | 25 | Citations (PDF) |
| 314 | Large-Scale Cubic InN Nanocrystals by a Combined Solution- and Vapor-Phase Method under Silica Confinement | 15.0 | 28 | Citations (PDF) |
| 315 | When self-organized In(Ga)As/GaAs quantum dot heterostructures roll up: Emerging devices and applications | 12.3 | 14 | Citations (PDF) |
| 316 | Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes | 8.7 | 191 | Citations (PDF) |
| 317 | Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon | 2.6 | 71 | Citations (PDF) |
| 318 | Tuning the Surface Charge Properties of Epitaxial InN Nanowires | 8.7 | 103 | Citations (PDF) |
| 319 | Self-organized InAs/InGaAsP quantum dot tube lasers | 3.0 | 21 | Citations (PDF) |
| 320 | Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon | 2.6 | 99 | Citations (PDF) |
| 321 | Single rolled-up InGaAs/GaAs quantum dot microtubes integrated with silicon-on-insulator waveguides | 3.0 | 52 | Citations (PDF) |
| 322 | Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays | 3.0 | 184 | Citations (PDF) |
| 323 | Selective polarization mode excitation in InGaAs/GaAs microtubes | 3.0 | 23 | Citations (PDF) |
| 324 | Band gap of InxGa1−xN: A first principles analysis | 3.0 | 52 | Citations (PDF) |
| 325 | p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111) | 8.7 | 269 | Citations (PDF) |
| 326 | InN p-i-n Nanowire Solar Cells on Si | 2.8 | 69 | Citations (PDF) |
| 327 | Wafer-Level Photocatalytic Water Splitting on GaN Nanowire Arrays Grown by Molecular Beam Epitaxy | 8.7 | 376 | Citations (PDF) |
| 328 | A review of environmental effects and management of nanomaterials | 1.6 | 22 | Citations (PDF) |
| 329 | Effects of metal contacts and dopants on the performance of ZnO-based memristive devices | 2.0 | 31 | Citations (PDF) |
| 330 | Photoluminescence Properties of a Nearly Intrinsic Single InN Nanowire | 17.0 | 51 | Citations (PDF) |
| 331 | Optimization of the structural and optical quality of InN nanowires on Si(111) by molecular beam epitaxy | 1.0 | 9 | Citations (PDF) |
| 332 | High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111) | 3.0 | 112 | Citations (PDF) |
| 333 | Controlled Transfer of Single Rolled-Up InGaAs–GaAs Quantum-Dot Microtube Ring Resonators Using Optical Fiber Abrupt Tapers | 1.7 | 38 | Citations (PDF) |
| 334 | Highly stable resistive switching on monocrystalline ZnO | 2.6 | 62 | Citations (PDF) |
| 335 | Optical microcavities on Si formed by self-assembled InGaAs/GaAs quantum dot microtubes | 3.0 | 55 | Citations (PDF) |
| 336 | Molecular beam epitaxial growth and characterization of non-tapered InN nanowires on Si(111) | 2.6 | 79 | Citations (PDF) |
| 337 | Optical modes in InGaAs/GaAs quantum dot microtube ring resonators at room temperature | 0.7 | 14 | Citations (PDF) |
| 338 | Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy | 0.1 | 0 | Citations (PDF) |
| 339 | High-Performance Quantum Dot Lasers and Integrated Optoelectronics on Si | 9.5 | 94 | Citations (PDF) |
| 340 | Quantum dot lasers: From promise to high-performance devices | 1.9 | 30 | Citations (PDF) |
| 341 | Polarization effects in self-organized InGaN/GaN quantum dots grown by RF-plasma-assisted molecular beam epitaxy | 1.9 | 8 | Citations (PDF) |
| 342 | Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers | 3.0 | 82 | Citations (PDF) |
| 343 | III-V compound semiconductor nanostructures on silicon: epitaxial growth, properties, and applications in light emitting diodes and lasers | 0.9 | 52 | Citations (PDF) |
| 344 | Pseudomorphic and Metamorphic Quantum Dot Heterostructures for Long-Wavelength Lasers on GaAs and Si | 2.8 | 33 | Citations (PDF) |
| 345 | Electrically injected InAs∕GaAs quantum dot spin laser operating at 200K | 3.0 | 75 | Citations (PDF) |
| 346 | Molecular beam epitaxial growth and characteristics of 1.52μm metamorphic InAs quantum dot lasers on GaAs | 1.3 | 33 | Citations (PDF) |
| 347 | Enhanced spontaneous emission at 1.55μm from colloidal PbSe quantum dots in a Si photonic crystal microcavity | 3.0 | 74 | Citations (PDF) |
| 348 | Quantum-Dot Optoelectronic Devices | 9.5 | 109 | Citations (PDF) |
| 349 | Groove-Coupled InGaAs/GaAs Quantum Dot Laser/Waveguide on Silicon | 3.5 | 17 | Citations (PDF) |
| 350 | Analysis of the Linewidth-Enhancement Factor of Long-Wavelength Tunnel-Injection Quantum-Dot Lasers | 1.3 | 29 | Citations (PDF) |
| 351 | Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45μm metamorphic InAs quantum dot lasers on GaAs | 1.9 | 18 | Citations (PDF) |
| 352 | High-Performance $\hbox{In}_{0.5}\hbox{Ga}_{0.5} \hbox{As/GaAs}$ Quantum-Dot Lasers on Silicon With Multiple-Layer Quantum-Dot Dislocation Filters | 2.7 | 124 | Citations (PDF) |
| 353 | High performance self-organized InGaAs quantum dot lasers on silicon | 1.3 | 21 | Citations (PDF) |
| 354 | DC and Dynamic Characteristics of P-Doped and Tunnel Injection 1.65-$\mu{\hbox {m}}$ InAs Quantum-Dash Lasers Grown on InP (001) | 1.3 | 56 | Citations (PDF) |
| 355 | Growth and characteristics of P-doped InAs tunnel injection quantum-dash lasers on InP | 1.7 | 13 | Citations (PDF) |
| 356 | Electrically Injected Quantum-Dot Photonic Crystal Microcavity Light-Emitting Arrays With Air-Bridge Contacts | 1.7 | 28 | Citations (PDF) |
| 357 | Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon | 0.7 | 75 | Citations (PDF) |
| 358 | Growth and characteristics of ultralow threshold 1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs | 3.0 | 63 | Citations (PDF) |
| 359 | Thermal relaxation time and heat distribution in pulsed InGaAs quantum dot lasers | 3.0 | 29 | Citations (PDF) |
| 360 | High-speed 1.3μm tunnel injection quantum-dot lasers | 3.0 | 150 | Citations (PDF) |
| 361 | Small-signal modulation characteristics of p-doped 1.1- and 1.3-/spl mu/m quantum-dot lasers | 1.7 | 38 | Citations (PDF) |
| 362 | Molecular-beam epitaxial growth and characteristics of highly uniform InAs∕GaAs quantum dot layers | 2.0 | 51 | Citations (PDF) |
| 363 | The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers | 3.0 | 243 | Citations (PDF) |
| 364 | Spectrally Pure, High Operational Dynamic Range, Deep Red Micro-LEDs | 8.7 | 3 | Citations (PDF) |
| 365 | Photoelectrochemical water splitting under concentrated sunlight: best practices and protocols | 2.0 | 6 | Citations (PDF) |
| 366 | Metal/Semiconductor Hybrid Systems for Photothermal Catalysis 0, 2, 23-42 | | 2 | Citations (PDF) |
| 367 | Toward High Wall-Plug Efficiency in Nanowire-Based Red Micro-LEDs | 6.0 | 3 | Citations (PDF) |
| 368 | Long-term stability of GaN-based photocatalyst nanostructures through dynamic oxide protection | 9.3 | 2 | Citations (PDF) |
| 369 | Ultrawide bandgap semiconductors for photonic applications: recent advances in epitaxial Ga<sub>2</sub>O<sub>3</sub>, hBN, and ScAlN [Invited] | 2.6 | 1 | Citations (PDF) |
| 370 | Pronounced visible luminescence in GaN by high-temperature anion implantation | 3.0 | 1 | Citations (PDF) |
| 371 | Self-Heating Effects and Thermal Mitigation Strategies in Ferroelectric ScAlN/GaN HEMTs | 3.3 | 1 | Citations (PDF) |
| 372 | MBE‐Grown ScAlN‐on‐Si Films: Enhancing In‐Plane Crystallinity for Extensional Mode BAW Resonators | 4.9 | 0 | Citations (PDF) |
| 373 | Self-Templated Sputtering Synthesis of III-Nitride Nanowire Array for Solar Water Splitting | 8.7 | 1 | Citations (PDF) |
| 374 | Rational Pathways Tuning Facilitates Photoelectrochemical Upcycling of Nitrite to Ammonia Using CuPd Nanoalloy on GaN/Si Photocathode | 11.1 | 1 | Citations (PDF) |
| 375 | Growth of wurtzite ferroelectrics | 4.1 | 1 | Citations (PDF) |
| 376 | Approaching the Akhiezer Limit of Quality Factor in AlScN-on-Silicon Bulk Acoustic Wave Resonators | 2.0 | 0 | Citations (PDF) |
| 377 | Strain-induced polarization of AlN/GaN heterointerfaces enabling ultra-high 2DEG densities | 3.0 | 0 | Citations (PDF) |
| 378 | A comprehensive study of metal-organic chemical vapor deposition of ultrawide bandgap MgSiN2 thin films on sapphire | 2.0 | 0 | Citations (PDF) |
| 379 | Excitonic quantum superlattices for efficient photocatalytic water splitting | 50.6 | 0 | Citations (PDF) |